KL UNIVERISTY

FIRST SEMESTER 2010-11

Course Handout
Academic Division
Dated: 07-07-2010

Course No. : EC C202 / EEC 201 / EM C202

Course Title : Electronic Devices and Circuits
Course Structure : 3-1-2
Course coordinator : Mr M Siva Ganga Prasad
Instructors : Dr. Lakshmi Narayana, J. Chandrasekara Rao,
B.Bhavani, Naseem Shaik, I. Manohar, L Ravichandra, N.
Durga Indira, M.Shivaganga Prasad, T.Sreelakshmi, J.
Bhavani, P.Purnapriya, KVL Bhavani, N Venkatram,
G.Subryamanya Sharma,

1. Course Description:
Electronic Devices & Circuits is defined as the various electronic devices are
connected as an appropriate circuitry and verify their characteristics. All the basic
devices like semi conductor junction diodes, BJTs and FETs are responsible to build
various communication circuits. The basic understanding of EDC is a pre-requisite
for any student trying to establish a research or academic career in the field of ECE.
Most of the research in ECE hovers around Communications, Signal Processing,
Image Processing and VLSI. Thus, it is essential to know the basic and fundamental
characteristics of various electronic devices. This paper describes the applications
PN junction diodes, fundamental requirements for BJT to acts as an amplifier and
characteristic of various unipolar devices.

2. Scope and Objective of the Course:

Based on the knowledge gained by the student at first year level about semi
conductor diode characteristics and conduction capabilities, there is a scope to learn
semi conductor diode applications like working of rectifiers with and without filters in
unit1 , based on the knowledge of BJT characteristics, there is a scope to learn
biasing techniques of BJT to operate it as an amplifier, small signal analysis of BJT
in unit 2 , high frequency analysis of BJT in unit 3 ,Introduction of FET , its biasing
techniques and its low frequency model in unit 4 and finally there is a scope to learn
about UJT,SCR,DIAC and TRIAC characteristics.

3. Books:
(i) Textbook:
A. Jacob Millman and Christos.C Halkias, “Electronic Devices and
circuits”, TMH 2002
b. 2.Robert L Boylested and Louis Nashelsky, “Electronic Devices and
Circuit Theory”, 8th Edition PHI 2002.
(ii) Reference Book:
a. G.S.N.Raju,” Electronic Devices and circuits”, IK International,2006.
b. Balbir Kumar & Shail B.Jain, “Electronic Devices And Circuits”,PHI-2007.
th
c. David A Bell, “Electronic Devices and circuits”, 4 Edition, PHI 2003.
d. Robert Diffenderfer, “Electronic Devices systems & Applications”, India
Edition, CENGAGE Learning

1
4. Syllabus:
Unit – I
RECTIFIERS Diode as a Rectifier, Half wave, Full wave and Bridge Rectifiers without
filter and with inductor filter, Capacitor filter, L section and π – section filters.
Unit – II
JUNCTION TRANSISTOR: Transistor DC bias and its stabilization, various
stabilization and compensation circuits, thermal runaway and thermal stability, Hybrid
parameter model of transistor. Hybrid Parameter model of a Transistors
Unit – III
Transistor at High Frequencies: Hybrid π model of transistor, CE short circuit gain,
CE current gain with Resistive load, Single stage CE amplifier response, Gain
Bandwidth product, Emitter follower at high frequencies

Unit - IV
UNI-POLAR DEVICES: JFET, depletion – MOSFET and enhancement – MOSFET:
basic construction, operation, drain and transfer characteristics FET parameters - rd ,
gm, µ ; biasing methods, FET low frequency model.
Unit – V
UJT: Basic construction, electrical equivalent circuit and operation, emitter
characteristics, SCR,DIAC, TRIAC Characteristics, Photo devices

5.Course Plan:

Course plan is meant as a guideline. There may probably be changes.

Lecture Learning Topics to be covered Reference Page No

No Objectives
UNIT- I

1 Diode as a rectifier, Basics description diode T1 592

Classification as a rectifier
rectifiers
2 Half-Wave rectifier Analysis of various T1 593-597
parameters related with
half-wave rectifier
3 Full-Wave rectifier Analysis of various T1 598-599
parameters related with
full-wave rectifier
4 Bridge Rectifier Basic construction and T1 599-600
operation
5 Rectifiers with Analysis of various T1 603-605
capacitor filter parameters
6 Rectifiers with Analysis of various T1 606-611
Inductor filter parameters
7 Rectifiers with L& π Analysis of various T1 612-614
section filters parameters
8 performance comparisonMerits, demerits T1 615-616

9 Introduction to DC load line analysis T1 263

biasing
10 Fixed bias method Analysis of operating point T1 263
with fixed biasing
11 Collector to base Analysis of operating point T1 264

2
 bias method with collector to base
biasing
12 Self biasing method Analysis of various T1 265-269
parameters
13 Self biasing method Analysis of various T1 270-276
parameters
14 various stabilization Analysis of operating point T1 278
methods with stabilization
15 Compensation Analysis of operating point T1 278-280
techniques with compensation
16 Compensation Analysis of operating point T1 281-283
techniques Thermal with compensation,
run away temperature effect
17 Hybrid parameter Hybrid parameter analysis T1 288
model of a
transistor
18 Hybrid parameter Low frequency analysis T1 294
model of a
transistor
19 Hybrid parameter Analysis of various T1 296
model of a parameters
transistor
20 Introduction to high Discussion on structure of T1 363
frequency analysis the model

21 Hybrid π model T1 365

Analysis of various
parameters
22 CE short circuit Analysis of common T1 368
current gain emitter amplifier with s/c
current gain
23 CE short circuit Analysis with resistive load T1 378
current gain with
resistive load
24 Single stage CE Operation and its T1 379
amplifier response

25 Single stage CE Gain Band width product T1 380

amplifier

26 Single stage CE Gain Band width product T1 381

amplifier

27 Emitter follower at Operation and its T1 382

high frequencies response

28 Emitter follower at Analysis and comparison T1 382

high frequencies

29 Introduction Uni- Nature and characteristics T1 385

polar devices

30 JFET Construction and T1 386-388

operation

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 31 Types of JFETs(n & Comparison, depletion T1 389
p channel) regions

32 Transfer & drain Response of JFETs T1 390

characteristics

33 Introduction to Construction and T1 396

MOSFET operation

34 Types(depletion & Comparison of merits, T1 397-398

enhancement) of demerits
MOSFETs
35 Parameters of FET µ, rd, gm and their relation T1 393

36 Biasing techniques Setting operating point T1 407-408

for FET

37 Low frequency Analysis of various T1 392

model of FET parameters
38 Low frequency model
of FET Analysis of various parametersT1 393-394
39 Introduction to UJT Basic construction of UJT T1 412

40 Electrical Operation and its emitter T1 413-415

equivalent model characteristics
41 Introduction to SCR Basic construction and T2
operation of SCR

42 Two transistor analysis T2

analogy
43 TRIAC Construction and T2
operation
44 DIAC Construction and T2
operation
45 Introduction to Basic construction & T1 566
Photo devices operation

6.Self learning material:

Sl.No TOPIC SOURCE
1. Quantitative theory of P-N junction diode Text Book
2. V-I characteristics of P-N junction diode Text Book
3. Junction Transistor Text Book
4. CB,CE and CC configurations of BJT and Text Book
their characteristics
5. Transistor as an amplifier Text Book

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 7.Evaluation Scheme:
Duration Marks Venue
Component % Weightage Date & Time
(minutes)
Test-1 CSE001, 002,
004, 005, 101,
14.08.10 102,104,105,1
50 Min 8 10
9.00 to 10.20 A.M 06,201,204,20
5,301,302,509
, NSH
Test-2 CSE001, 002,
004, 005, 101,
18.09.10
102,104,105,1
50 Min 8 10 09.00 to 10.20
06,201,204,20
AM
5,301,302,509
, NSH
Assignement submission
4 5 Continuous

Assignment Test CSE001, 002,

004, 005, 101,
30.10.10
102,104,105,1
50 Min 4 5 09.30 to 10.20
06,201,204,20
AM
5,301,302,509
, NSH
Quiz CSE001, 002,
004, 005, 101,
30.10.10
102,104,105,1
30 Min 4 5 09.30 to 10.20
06,201,204,20
AM
5,301,302,509
, NSH
Regular Lab Evaluation Continuous 10 50
Comprehensive Lab Exam 3 Hrs 8 40
Comprehensive Exam 3 Hrs 48 60
Attendance for Theory & Continuous
4 5
Tutorial
Attendance for Lab Continuous
2 10

8. Chamber consultation hour: Informed in the class in first week.

9. Notices: All notices regarding the course will be put in E-learning website.
10.Tutorial: Tutorial will be conducted by the respective in charge faculty. The
tutorials are planned to supplement the material taught in the lectures and clear
doubts. Student must attend registered section for tutorial in the respective
classroom. Class assignment, class tests and other evaluation components will also
be conducted during tutorials. Students must actively participate in the tutorial and
come prepared for it.

Course Coordinator