John Ambrose Fleming (18491945) Vacuum Tube 1904

Ferdinand Braun in 1874. The first semiconductor diodes, called cat's whisker diodes,
developed around 1906, were made of mineral crystals such as galena.

Russell Shoemaker Ohl (January 30, 1898 March 20, 1987) discovered pn junction

TRANSISTOR

1947 and announced in 1948 by Bell Laboratory engineers John Bardeen and Walter Brattain.

William Shockley invented the junction transistor

Jack Kilby at Texas Instruments and Robert Norton Noyce at

PLANAR PROCESS was developed by Jean Hoerni

1833:
First Semiconductor Effect is Recorded

Michael Faraday describes the "extraordinary case" of his discovery of electrical conduction increasing
with temperature in silver sulfide crystals. This is the opposite to that observed in copper and other
metals.

1874:
Semiconductor Point-Contact Rectifier Effect is Discovered

In the first written description of a semiconductor diode, Ferdinand Braun notes that current flows
freely in only one direction at the contact between a metal point and a galena crystal.
1901:
Semiconductor Rectifiers Patented as "Cat's Whisker" Detectors

Radio pioneer Jagadis Chandra Bose patents the use of a semiconductor crystal rectifier for detecting
radio waves.

1926:
Field Effect Semiconductor Device Concepts Patented

Julius Lilienfeld files a patent describing a three-electrode amplifying device based on the
semiconducting properties of copper sulfide. Attempts to build such a device continue through the
1930s.
1931:
"The Theory Of Electronic Semi-Conductors" is Published

Alan Wilson uses quantum mechanics to explain basic semiconductor properties. Seven years later
Boris Davydov (USSR), Nevill Mott (UK), and Walter Schottky (Germany) independently explain
rectification.

1940s

1940:
Discovery of the p-n Junction

Russell Ohl discovers the p-n junction and photovoltaic effects in silicon that lead to the development
of junction transistors and solar cells.

1941:
Semiconductor diode rectifiers serve in WW II

Techniques for producing high purity germanium and silicon crystals are developed for wartime radar
microwave detectors.
1947:
Invention of the Point-Contact Transistor

John Bardeen & Walter Brattain achieve transistor action in a germanium point-contact device in
December 1947.

1948:
The European Transistor Invention

Herbert Matar & Heinrich Welker independently create a germanium point-contact transistor in
France.

1948:
Conception of the Junction Transistor

William Shockley conceives an improved transistor structure based on a theoretical understanding of

1950s

1951:
Development of Zone Refining

William Pfann and Henry Theurer develop zone refining techniques for production of ultra-pure
semiconductor materials.

1951:
First Grown-Junction Transistors Fabricated

Gordon Teal grows large single crystals of germanium and works with Morgan Sparks to fabricate
an n-p-n junction transistor.
1952:
Transistorized Consumer Products Appear

Semiconductors appear in battery-powered hearing aids and pocket radios where consumers are
willing to pay a premium for portability and low power consumption.

1952:
Bell Labs Licenses Transistor Technology

Bell Labs technology symposia and licensing of transistor patents encourages semiconductor
development.

1953:
Transistorized Computers Emerge

A transistorized computer prototype demonstrates the small size and low-power advantages of
semiconductors compared to vacuum tubes.

1954:
Diffusion Process Developed for Transistors

Following the production of solar cells using high-temperature diffusion methods, Charles Lee and
Morris Tanenbaum apply the technique to fabricate high-speed transistors.

1954:
Silicon Transistors Offer Superior Operating Characteristics

Morris Tanenbaum fabricates the first silicon transistor at Bell Labs but Texas Instruments' engineers
build and market the first commercial devices.
1955:
Photolithography Techniques Are Used to Make Silicon Devices

Jules Andrus and Walter Bond adapt photoengraving techniques from printing technology to enable
precise etching of diffusion "windows" in silicon wafers.

1955:
Development of Oxide Masking

Carl Frosch and Lincoln Derick grow a silicon dioxide film on wafers to protect their surface and allow
controlled diffusion into the underlying silicon.

1956:
Silicon Comes to Silicon Valley

Shockley Semiconductor Laboratory develops Northern California's first prototype silicon devices while
training young engineers and scientists for the future Silicon Valley.

1958:
All Semiconductor "Solid Circuit" is Demonstrated

Jack Kilby produces a microcircuit with both active and passive components fabricated from
semiconductor material.

1958:
Silicon Mesa Transistors Enter Commercial Production

Fairchild Semiconductor produces double-diffused silicon mesa transistors to meet demanding

Leo Esaki's novel device is an example of many celebrated semiconductor breakthroughs that do not
sustain their early promise as they are overtaken by competing technologies.

1959:
Practical Monolithic Integrated Circuit Concept Patented

Robert Noyce builds on Jean Hoerni's planar process to patent a monolithic integrated circuit structure
that can be manufactured in high volume.

1959:
Invention of the "Planar" Manufacturing Process

Jean Hoerni develops the planar process to solve reliability problems of the mesa transistor, thereby
revolutionizing semiconductor manufacturing.

1960s

1960:
Epitaxial Deposition Process Enhances Transistor Performance

Development of thin-film crystal-growth process leads to transistors with high switching speeds.

1960:
Metal Oxide Semiconductor (MOS) Transistor Demonstrated

John Atalla and Dawon Kahng fabricate working transistors and demonstrate the first successful MOS
field-effect amplifier.
1960:
First Planar Integrated Circuit is Fabricated

Jay Last leads development of the first commercial IC based on Hoerni's planar process and Noyce's
monolithic approach.

1961:
Dedicated Semiconductor Test Equipment Enters Commercial Market

Semiconductor and independent vendors build dedicated test equipment for high-throughput
manufacturing.

1961:
Silicon Transistor Exceeds Germanium Speed

Computer architect Seymour Cray funds development of the first silicon device to meet the
performance demands of the world's fastest machine.

1962:
Aerospace systems are first the applications for ICs in computers

The size, weight, and reduced power consumption of integrated circuits compared to discrete
transistor designs justify their higher cost in military and aerospace systems.

1963:
Standard Logic IC Families Introduced

Diode Transistor Logic (DTL) families create a high-volume market for digital ICs but speed, cost, and
density advantages establish Transistor Transistor Logic (TTL) as the most popular standard logic
configuration by the late 1960s.

1963:
Complementary MOS Circuit Configuration is Invented
Frank Wanlass invents the lowest power logic configuration but performance limitations impede early
acceptance of today's dominant manufacturing technology.

1964:
First Commercial MOS IC Introduced

General Microelectronics uses a Metal-Oxide-Semiconductor (MOS) process to pack more transistors

1964:
The First Widely-Used Analog Integrated Circuit is Introduced

David Talbert and Robert Widlar at Fairchild kick-start a major industry sector by creating
commercially successful ICs for analog applications.
1964:
Hybrid Microcircuits Reach Peak Production Volumes

Multi-chip SLT packaging technology developed for the IBM System/360 computer family enters mass
production.

1965:
Semiconductor Read-Only-Memory Chips Appear

Semiconductor read-only-memories (ROMs) offer high density and low cost per bit.

1965:
Package is the First to Accommodate System Design Considerations

The Dual In-line Package (DIP) format significantly eases printed circuit board layout and reduces
computer assembly cost.

1965:
Mainframe Computers Employ ICs

Large computer manufacturers announce machines based on custom and special purpose integrated
circuits.

1965:
"Moore's Law" Predicts the Future of Integrated Circuits

Fairchild's Director of R & D predicts the rate of increase of transistor density on an integrated circuit
and establishes a yardstick for technology progress.
1966:
Computer Aided Design Tools Developed for ICs

IBM engineers pioneer computer-aided electronic design automation tools for reducing errors and
speeding design time.

1966:
Semiconductor RAMs Serve High-speed Storage Needs

Bipolar RAMs enter the computer market for high-performance scratchpad and cache memory
applications.

1967:
Application Specific Integrated Circuits employ Computer-Aided Design

Automated design tools reduce the development engineering time to design and deliver complex
custom integrated circuits.

1967:
Turnkey Equipment Suppliers Change Industry Dynamics

Third-party vendors develop specialized knowledge of semiconductor fabrication and emerge as

1968:
Silicon Gate Technology Developed for ICs

Federico Faggin and Tom Klein improve the reliability, packing density, and speed of MOS ICs with a
silicon-gate structure. Faggin designs the first commercial silicon-gate IC the Fairchild 3708.
1968:
Dedicated Current Source IC Integrates a Data Conversion Function

The precision manufacturing requirements of combining analog and digital capability on one chip made
them one of the last product areas to yield to monolithic solutions.

1969:
Schottky-Barrier Diode Doubles the Speed of TTL Memory & Logic

Design innovation enhances speed and lowers power consumption of the industry standard 64-bit TTL
RAM architecture. Is quickly applied to new bipolar logic and memory designs.

1970s
1970:
MOS Dynamic RAM Competes with Magnetic Core Memory on Price

The Intel i1103 Dynamic RAM (DRAM) presents the first significant semiconductor challenge to
magnetic cores as the primary form of computer memory.

1971:
Microprocessor Integrates CPU Function onto a Single Chip

Silicon-gate process technology and design advances squeeze computer central processing units (CPU)
onto single chips.

1971:
Reusable Programmable ROM Introduces Iterative Design Flexibility

Dov Froman's ultra-violet light erasable ROM design offers an important design tool for the rapid
development of microprocessor-based systems, called an erasable, programmable read-only-memory
or EPROM.

1974:
Scaling of IC Process Design Rules Quantified

IBM researcher Robert Dennard's paper on process scaling on MOS memories accelerates a global race
to shrink physical dimensions and manufacture ever more complex integrated circuits.

1974:
General-Purpose Microcontroller Family is Announced

A single-chip calculator design emerges as the TMS 1000 micro-control unit or MCU, a concept that
spawned families of general-purpose digital workhorses that power the tools and toys of the
developed world.
1974:
Digital Watch is First System-On-Chip Integrated Circuit

The Microma liquid crystal display (LCD) digital watch is the first product to integrate a complete
electronic system onto a single silicon chip, called a System-On-Chip or SOC.

1978:
PAL User-Programmable Logic Devices Introduced

John Birkner and H. T. Chua of Monolithic Memories develop easy-to-use programmable array logic
(PAL) devices and tools for fast prototyping custom logic functions.

1979:
Single Chip Digital Signal Processor Introduced

Bell Labs' single-chip DSP-1 Digital Signal Processor device architecture is optimized for electronic
switching systems.