Epllaxlal Planar

PilP Sllicon Transistors

) NEHM
258737258821
Ultra'Low Noise Low-FrequencY
Amplilicalion \J
Low Base Fesistancefor use in MC Head
Ampliliers
Electrical CharacteristicCurves
D i m e n s i o n (sm m )
^^^-^' JEOEC ro 92 2 5 8 8 2 1 - F 0 H MF T R
z)Drr,.EtAJ .SC_41
I losc

'm
i_1-

m
tl I
tl i
-Ttr i
z
tfr t
z
IU I llF 0.45
d
z
; l

6
6
E: Emilter
C: Collectol 3
B: Base

0 0.2 -0.4 -0.6 {.8 -1.0 0 -0.4 0.8 ,1.2 -1.6 -2.0
This ultra-lownoise transistoris suilable AbsoluteMaximum Ratings(T.- 25'C) AMBIENT
TEMPEFATUFE:
T. fC) TOEMITTER
COLLECTOF vOLTAG:vcr (v)
SASETO EMITTER Vr (V)
VOLTAGE,
lor use in fread amplifiersfor MC car- ilem
Frg.
't
Maximum power dissipataon
vs. Fig. 3 Collrctor current vs. colledoFto-
Fig.2 Coll*tor drrent vs. bGe{oemitter
tndges. ambrenltemperature voltage emittervoltage
Collectorto-eminer volBge
Emitterto-base voltage
Features Collector current

1 . U l t r a - l o wn o r s e : CollectordlssiPation z
NF-2 sdB (typ) Junction temPerature
-
( a t f = 1 0 H z ,R s - 1 0 o , t 6
Vc:=-6V, 1c=-3mA) .a
N F = 1. 0 d B ( t y p ) \t: z
o ,o
(at 1-1 0Hz, Rs=100O VcL--6v Electrical Characteristics (T"=25'C)
lc=-0.5- 2mA)
a o
=2() z -0
2. Low base resistancers
f

Colleclor{o-emlter
3. Low voltagenoise:e"=0 55nV/lF7
O
o
3k
( a t1 O H z , 1 O m A ) -0.5 1 ,2 5 10 -20 50 r00 -200
4. Cornplementarywith 2SD786(reterto R U R R E N Tl:c ( m A )
C O L L E C T OC o< C O L L E C T O RC U B R E N T : l c ( F A )
P a g e 1 9 4 )a n d w h e nu s e di n c o m b l n a - Fig.4 DC curenl gain vs- @llectorcurrent Fig.5 Colleclor saturation voltage vs. colleclor
tion with that device, these lrasistors current

can comPrise an ultra high Pertor'

mance head amPlifier.
;
Applications
1. [,4ClMN4Head/cartridge ampliJier I z
= tr
2 . H e a d a m p l i f i e t sf o r l o w ' l m p e d a n c e I
l n p u lc l r c u l l s
FLAT AMP (Gr=80d8)
V.r=-10V, lc=-1mA z
F
5 l
o
F
!

Devices are classifiedaccordlngto tnelr a o

F
hFErange as shown below t:

rtemlolRls
h,, | 12o 270 | 180 390 | 270 560
CoLLECTOR TO EASE VOLTAGE V(r (V)
E M I T T E RC U R R E N Tl:E { m A }
Fig.6 Transilion lrequency 6. emittel Fig. 7 Oulput capacilance vs. collectotrlo-
currenl base voilage

f{
 NTTHM
\ I

;
z
i

TRtOUENCY I (Hr)

F Fig 15 Noise curenl vs. lrequenry

l

F
L 258737 and 25D7B6Noise To achieve a low value of e":
= E M I T T E RT O B A S EV O L T A G E V E B( V l C O L L E C T O FC U F B E N T l c ( d A l
Characteristics 1 . L o w e rr . ( . e . ,m a k e l r j l a r g e )
2SD786
l'.10Hz,
F i 9 .I I n p ! t c a p a c i t a n c ves e m t t e r t o _ b a s e Fig t h parameters vs. collector current
2. Lower rrr' 1 0 f ) 2.5dB 2.5d4
voLrage N o i s ei s a n i l n p o r t a ncl o n sd e r a t i o nw h e n With the aim ol loweringrnr,spec a difiu- l,.3mA
arnpiifying s gnals lrom such lolv, sron lechnrques and a new passrvalron 1 0 0 o 1.0d8 t=10H2.
resrslancesourcesas MC carlndgesThrs 1.0d8
technique were used in developingthe l.- lmA
is becauscthe N.1C carlildgermpeoancers
: 2SD786 and 258737, resultingin values
i n l h e r a n g e2 " 1 0 0 O . of r,$ of approximalely 4O and 2o It rs possrbleto configure an ullra hrgh
s W h e n l h e a r n p i i t l eor u t p u tn o i s e r s c o n respectively. p e r t o r m a n c eh e a d a m p l i f i e ru s i n g t h e
v e r l e d1 oa n c q u i v a l e nnt o i s ea t l h e i n p u l
: w e d e rv e l h e l o l o w i n gr e l a l l o n s h i p .
T h e s u b s e q u e n l l ay c h r e v e dv a l u e so f e " 2 S 8 7 3 7 a n d 2 S D 7 8 6 t r a n s l s l o r sO . ne
I 2 are example of the periormancethal can be
; I \ I v;ric"+4x1t,n.r,"*
2SD786:Approx.o.ssnvi /aHz (al 10H2, a c h i e v e dr s a n i n p u t - r e f e r r endo i s ev o l t
1O m A ) a g e o l - 1 5 9 d B a n d a n S / N r a t i oo l 8 1d B
i tr
2 S 8 7 3 7 :A p p r o x 0 . 5 5 n V / V H z ( a t 1 0 H 2 , (at 0.125mV inpul).an easily achievabte
T AD-r.irnr r'',,0.,1r1,'n
< lrl,_ i-- s aLr'rlta r
10rnA) level ol perlormance.
When we lower the value of r., however,
6 h e c u r r e n tn o i s el e r m i " b e c o m e ss u c h
thal il caf no longer be lgnored This i"
c o L L a c T o cF! R F E f r r . . ! C O L L E C I OCBU F n E NlT' " i term is expressed by lhe lollowing
and
Fig 12 Noiseligure vs sourceresistance
relatronshrp.
Fig. l0 Noiseligure vs soorceresislanceand Fig. 11 Noisefigurevs. source16istanceand
colleclorcurent (l) collectorcurrent (ll) colleclorcurrent (lll)
i"=\2q l

When lB increases,jt causes an tncrease

li In i",so thal lo reduce1Bwe musl increase
Thrs means that, Ior low values of Ra,e" h ' $ d r n 6 1 g 2 5 1 q hg ' I Ta{es lhe bi"e
I
5to (lhe voltagcnorse)rs the governng factor. w d t h
s r a l l c r c a J s i l ga ^ i n c ' e a s eI n ' . .
T h r s t e r n e ^ r s d e f i n e db y l h e l o l l o w i n g Thus,a way musl be Joundlo increaseh! r:
=a = expressron. without caus ng the reverse result ol
^ _ , q' ^; ;| ; " T,, r , * reducinglhe base widlh.The ROHl.4solu
9
cn \ tr',h /^l
tionlo this problemwas a specialdiflusion
E
techinique The rcsult ol lowenng lhe
'. f ' r r , ' ' , , : r . r , . A i l r L - : 5 1 . . . . ol lrirr Llfillrr values ol e' and i" in the 2St)786 and
258737 was the achievernenlol ullra low
u 02 norse characlerlstlcs herelolore
KT impossible
a
9
aa C O L L E C I O R C U B R E N T I C( M A ) ! FREOUNCY | (Hzl
Fig 13 Noise vollageandcurrenlvs.collector
? Fig 14 Noise voltage vs. lrequency