SiC Devices Meet High-Voltage Challenges for

Solar
Power Applications
February 16, 2017

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OVERVIEW 2

1. Introduction To High Voltage PV , Why SiC?

2. Using SiC Devices

3. SiC Products Available Today and Future Trends

4. Ideal SiC Applications in PV

Ultra Wide Input Aux. Power Supply

DC String Optimizers

String Inverters

Central Inverters

5. Accessories and Design Support Tools

6. Questions

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 WHY 600 VDC 1000 VDC 1500 VDC ? 3

DC Central
Optimizer Inverter
Combiner
PV String 1kV
- 1kV
- 480 Vac

- ~
DC Central
Inverter 690 / 800 Vac
Optimizer
Combiner 1.5kV
PV String
1.5 kV

- -
- ~
String
Inverter
1.5 kV - 690 / 800 Vac
PV String
~
HV Aux.
Less cabling / trenching
Power
Fewer strings and combiners
Fewer inverters
Lower install labor
* GTM Research

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1500V PV PLANT COST WILL DECREASE DESPITE HIGHER 4
INVERTER COSTS

The shift to 1500VDC means most topologies will now require a 900V or higher rated switch.

Current Cost changes for 1,500 VDC System in Comparison to 1,000 VDC System

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1500V POWER CONVERSION COST BREAKDOWN 5

Passive and mechanical components

1%
account for 63% of the total cost of the
system.
Mechanical
30% 33%
Electromechanical

For significant cost reduction it is Semiconductors

necessary to find ways to reduce the use Electronics

passive and mechanical components. Passives

8% Other

16%
Options are: 12%

1. Higher switching frequency.

Typical 1000VDC 2L PV inverter cost breakdown
2. More voltage levels.

3. Reduce losses.

4. Combination of or all of the

above.

High Voltage and High Frequency = Ideal SiC application

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 DEVICE COMPARISON 6

WS1000V CoolMOS 900V 1200V IGBT /w FRED

Key Parameters C3M0065100K IPW90R120C3 IKW40N120H3
Rds(on) @ 25C 65 m 100 m 51.25 m*
Rds(on) @ 150C 90 m 270 m 65 m*
Vds / Vce 1000V 900V 1200V
Qg 30 nC 270 nC 185 nC
Ciss 660 pF 6800 pF 2330 pF

Coss, 600/0V, 1MHz 60 / 1000 pF 60 / 15,000 pF 150 / 1100 pF

Ton (Tdon+Tf)@25C 28 nS 95 nS 46 nS

Toff (Tdoff+Tr)@25C 29 nS 420 nS 347 nS

Package TO-247-4 TO-247-3 TO-247-3

At 900V and above SiC MOSFETs are in class of their own.

* Converting VCEsat to Rdson @ rated current

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SIC ENABLES HIGH VOLTAGE AND HIGH SWITCHING FREQUENCY 7

300 Amp SiC More Capable than 600 Amp

IGBTs
350

300

250
Losses (Watts)
200
Diode
150 Switching
100 Conduction

50

0
SiC MOSFET 300 Amp, Si IGBT 600 Amp,
10 kHz 3 kHz

How does it lower cost?

Increased frequency reduces size and weight of magnetics
Lower losses reduce system cooling requirements
Amperage rating for SiC less than half required for Si IGBTs

Copyright 2013, Cree, Inc.

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10KVA, 20KHZ VERSUS 100 KHZ BOOST INDUCTOR
COMPARISON 8

Inductor Parameters
Inductance @ Core Coil Size Weight DCR Coil Core Ref. Price
rated Current (mm) (kg) (mOhm) Losses Losses (W) (USD)
(uH) (W)

Si IGBT Sendust 8awg 140x

Solution @ 20 1100 powder 1 108x 2.3 22 6.1 13.0 31
kHz + ferrite 98 turns 68
SiC Solution High 12 awg
OD:63x
@ 100 kHz 450 Flux 1 0.4 25 7.5 15.8 10
HT:26
powder 55 turns

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 RESTRUCTURE, NOT INCREASE BoM FOR A BETTER PRODUCT 9

Total
Cost ($)
Other
Higher efficiency
Other Smaller size
+ Less weight
Less audible noise
Simplified design
Semi- Semi-
conductors conductors

$0

Si Solution SiC Solution

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FOCUS PRODUCTS FOR TODAY 10

Package Voltage Current P/N

1000V 65 mohm, 35A C3M0065100K
1700V 80 mohm, 28A C2M0080170K
TO247-4L

1700V 1 ohm, 5A C2M1000170J

7L D2PAK

900V 10 mohm, 196A CPM3-0900-0010A

Bare Die

See complete product portfolio at wolfspeed.com/power

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SiC IS DIFFERENT BUT EASY TO USE 11

Gate drive voltage is +15 / -4V for C3Mxxx devices.

Gate drive voltage is +20 / -5V for C2Mxxx devices.

Devices can be driven with uni-polar gate drives i.e. no negative bias,
with slight increase (12 15%) increase is switching losses.

Short circuit withstand times are shorter for SiC MOSFETs than IGBTs.

Rth,j-c is usually higher for SiC devices when compared to similar rated
Si devices.

Switching speed is higher i.e. higher dv/dt and di/dt.

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 1KV DC BUS SHORT CIRCUIT EVENT ON 1.2KV, 62 MM MODULE 12

ID (1kA/div)
VGS (5V/div)
VDS (200V/div)

500nS / Div

1.2kV, 300A SiC Time from event detection to Turn-Off = 1.7 uS @ 5kA
MOSFET module

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 SHORT CIRCUIT VOLTAGE OVERSHOOT 13

ID (1kA/div) 2 level gate turn-off minimizes voltage overshoot.

VGS (5V/div) Test results from testing the new Agile Switch
VDS (500V/div) 62mm Driver.

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USE LOW IMPEDANCE PACKAGE WITH KELVIN SOURCE 14

7L D2PAK TO-247-4

Drain

Gate
Power
Driver
Source
Source

1000V, 65m, 36A C3M0065100J 1000V, 65m, 36A C3M0065100K

1000V, 120m, 15A C3M0120100J 1000V, 120m, 15A C3M0120100K
1700V, 80m, 28A C3M0080170K

Low impedance package optimized for SiC

Kelvin gate source pin to reduce switching losses and ringing
Wide creepage for higher voltage capability (>7mm)

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SWITCHING LOSS COMPARISON @ VDD=600V, RG.EXT=2.5OHM, VGS=-4/+15V 15

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 1500VDC ULTRA WIDE INPUT
AUX. POWER SUPPLIES

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HV AUX. POWER SUPPLY 17

Si Solution SiC Solution

Vin: 200 1500V Vin: 200 1500V

Vo: 24 VDC Vo: 12 VDC
Po: 80W Po: 80W
Fsw = 75 kHz Fsw = 75 kHz
PCB cooling PCB cooling
Rth.c-s = 0.02 C/W Example 200-1500VDC 40W Aux. PS
Rth.c-s = 0.02 C/W
Rth.s-a = 1.2 C/W Rth.s-a = 1.2 C/W
Ta.max = 75C Ta.max = 75C

1x C2M1000170J

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 COMPARE PERFORMANCE ON FLYBACK 18

Total MOSFET Losses (W) Est. MOSFET Tj (C)

3
2.7 2.7 84 83
2.5 82

2 80
78 78
1.5 78
1.2
0.92 76
1 76

0.5 74

0 72
Vin=200V Vin=1450V Vin=200V Vin=1450V

Using SiC will deliver a smaller and simpler (low component count) product with better voltage margin .

Si Solution Two switch Flyback using 2x 800V, 500 mohm MOSFET

SiC Solution Single ended Flyback using 1x 1.7kV, 1ohm MOSFET

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EXAMPLE FLY-BACK EVALUATION BOARD 19

P/N: CRD-060DD17P-2
DC+

70 mm
DC- Output A

Output B

120 mm
Specification (Without Heatsink): Features:
Input Voltage: 300V-1000V DC Fsw=75kHz
Output A: 12V/4A and Output B:12V/0.1A Primary side current sensing
Board Size: 120mmx70mmx35mm Primary side aux. winding for control power
Topology: Single end Flyback converter Texas Instruments UCC2844D controller
Secondary voltage sense via opto

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 1500VDC STRING
OPTIMIZERS

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STRING OPTIMIZERS NON ISOLATED 21

Si Solution SiC Solution

Vin.max: 1500V Vin.max: 1500V
Vin: 800 VDC Vin: 800 VDC
Vo: 1200 / 1400 VDC Vo: 1200 / 1400 VDC
Po: 12 kW Po: 12 kW
Fsw = 10 kHz Fsw = 80 kHz
Natural cooling Natural cooling Example 1000V String Optimizer
Rth.c-s = 0.038 C/W Rth.c-s = 0.5 C/W with non-isolated topology.
Rth.s-a = 0.71 C/W Rth.s-a = 0.71 C/W
Ta.max = 75C Ta.max = 75C

2x 400A, 1200V Boost module 2x C3M0065100K 2x C3M008017K

2x C4D15120A 2x C3D25170H

Non-Isolated 3L Boost Non-Isolated 2L interleaved boost

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COMPARE PERFORMANCE ON 3L BOOST 22

Total Device Losses (W)

Est. Device Tj (C)
200
182 140 130
180

160
120 113
140 100

120
80
100 94
60
80 69
60 53 40

40
20
20
0
0 Vin=800V Vin=1400V
Vin=800V Vin=1400V

Using SiC will deliver a smaller, lighter, more efficient and lower cost product.

Si Solution 2x 1.2kV, 400A 62mm boost modules, @10kHz

SiC Solution 2x 1kV, 65 mohm MOSFETs & 2x 1.2kV, 15A Diodes @ 80kHz

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COMPARE PERFORMANCE ON 3L VS 2L BOOST 23

2L Vs 3L Boost Device Losses

2L vs 3L Boost Est. Device Tj (C)
(W)
132
80
69 130
70 130

60 128

50 44 126

40
124
30 122
122
20
120
10

0 118
Vin=800V Vin=800V

Using SiC will deliver a smaller, lighter, more efficient and lower cost product.

SiC Solution 2L Boost using 2x 1.7kV, 80 mohm @ 80kHz

SiC Solution 3L Boost using 1kV, 65 mohm MOSFETs @ 80kHz

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STRING OPTIMIZERS - ISOLATED 24

Si Solution SiC Solution

Vin.max: 1500V Vin.max: 1500V
Vin: 800 VDC Vin: 800 VDC
Vo: 1200 VDC Vo: 1200 VDC
Po: 12 kW Po: 12 kW
Fsw = 200 kHz Fsw = 200 kHz
Natural cooling Natural cooling
Rth.c-s = 0.5 C/W Rth.c-s = 0.5 C/W
Rth.s-a = 0.71 C/W Rth.s-a = 0.71 C/W Example 1500V String Optimizer
Ta.max = 75C Ta.max = 75C with isolated topology.

24x 800V, 450mohm Si MOSFET

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 COMPARE PERFORMANCE ON LLC 25

LLC Est. Device Tj (C)

LLC Device Losses (W)
140 132
250

206 120 114

200
162 100 91 86
150 80

100 60

61 40
50
19 20

0
Vin=800 Vin=1450 0
Vin=800 Vin=1450

Using SiC will deliver a smaller, simpler, lighter, more efficient and lower cost product.

Si Solution 24x 800V, 450 mohm MOSFETs @200kHz

SiC Solution 4x 1.7kV, 80 mohm MOSFETs @ 200kHz

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SI 15KW LLC (20A) VS. SIC 20KW LLC (35A) 26

600V Si Based 15KW LLC SiC Based 20KW LLC

Output 20A
Less is more ! Output 35A

4.1 Kg 3.2 Kg
220mm x 340mm footprint 220mm x 275mm footprint
More components 20% fewer parts

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 1500VDC STRING
INVERTERS

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 STRING INVERTERS 28

Si Solution SiC Solution

DC link: 1450 VDC DC link: 1450 VDC

Vo: 690 Vac, 60Hz Vo: 690 Vac, 60Hz
Po (PF=1): 125 kVA Po (PF=1): 125 kVA
Inverter Fsw = 5 kHz Inverter Fsw = 10 kHz
Forced Air cooled @ 55C Forced Air cooled @ 55C
Tsink = 80C Tsink = 80C

Example 125 kVA 1500VDC rated string inverters

3x 1200V 150A Hybrid 3x 1200V 150A

NPC Phase Leg NPC Phase Leg Module
Module /w 1xCMP3-0900-0010A

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 COMPARE RESULTS ON STRING INVERTER 29

String Total Device Losses (W)

1600 String Est. Device Tj (C)
1468
120
1400 118
118
1200 1149
116
1000
114
800
112

600
110 109
400 108

200 106

0 104
Vin=1450 Vin=1450

Using SiC will deliver a smaller, lighter, more efficient and lower cost product.

Si Solution 3x 1.2kV, 300A 3L NPC modules @5kHz

Hybrid Solution 3x 1.2kV, 300A Si IGBT module with 10m0hm 900V SiC MOSFETs & 1.2kV
SiC Schottky Diodes @ 10kHz

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CREE REFERENCE DESIGN 50KW, 3L, PV INVERTER 30

Top cover open Back cover open

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WHERE THE WEIGHT (COST) REDUCTION COMES FROM 31

75
65 Si SiC

50
Weight (kg)

25 25 24
25 22

8.3 8
4.3 4.5 6
3.3 4.2
2 2 2 0.4
0
Enclosure Heatsink Booster AC DC Link AC PCBs + Others
Inductors Inductors Capacitor Capacitors Controller

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 1500VDC CENTRAL
INVERTERS

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 CENTRAL INVERTERS 33

Si Solution SiC Solution

DC link: 1350 VDC DC link: 1350 VDC

Vo: 690 Vac, 60Hz Vo: 690 Vac, 60Hz
Po (PF=1): 234 kVA Po (PF=1): 234 kVA
Inverter Fsw = 5 kHz Inverter Fsw = 10 kHz
Forced Air cooled @ 55C Forced Air cooled @ 55C
Tsink = 80C Tsink = 80C
Example 1500VDC Central Inverter.
Modular power section.

3x 1200V 300A Hybrid 3x 1200V 300A

NPC Phase Leg NPC Phase Leg Module
Module /w 2xCMP3-0900-0010A

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 COMPARE PERFORMANCE ON 3L NPC 34

Total Device Losses (W) Central Est. Device Tj (C)

118
3000 117
2563
2500 116

2007
2000 114

1500 112

110
1000 110

500 108

0 106
Vin=1350 Vin=1350

Using SiC will deliver a smaller, lighter, more efficient and lower cost product.

Si Solution 3x 1.2kV, 300A 3L NPC modules @5kHz

Hybrid Solution 3x 1.2kV, 300A Si IGBT module with 10m0hm 900V SiC MOSFETs & 1.2kV
SiC Schottky Diodes @ 10kHz

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 EVALUATION AND DESIGN
SUPPORT TOOLS

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SPEEDFIT ONLINE SIMULATOR 36

http://www.wolfspeed.com/speedfit/

SpeedFit is a free online simulator for SiC devices.

LTSPICE & PLECs Model of the devices are also available.

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SPEEDFIT OUTPUT 37

Other topologies available on

SpeedFit:

3L NPC Inverter

2L Inverter

Boost Converter

LLC resonant converter

And many more

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EVALUATION BOARDS 38

Available Now

P/N: CRD-5FF0912P

1500V SiLabs Driver

P/N: CRD-2FF0917P-1 Available in April 2017
P/N: CRD-2FF0917P-2

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SUMMARY 39

The shift to 1500VDC in PV will require a 900V rated switch for 3L or

1700V rated switch for 2L topologies.

Si devices have high switching losses compared SiC devices at high

voltage.

900V, 1kV, 1.2kV and 1.7kV SiC MOSFETs and Diodes are ideal for
the transition to 1500V power conversion systems in PV applications.

Products and support tools are available today:

Gate drivers and LTSPICE and PLECs models available
Free access to SpeedFit Online Design Simulator
Evaluation boards
Chips www.wolfspeed.com/powe
r

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 THANK YOU
&
QUESTIONS

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2016
2016 Wolfspeed,
Wolfspeed, Inc.
Inc. All
All rights
rights reserved
reserved