AO4435

P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO4435 uses advanced trench technology to VDS = -30V

provide excellent RDS(ON), and ultra-low low gate charge ID = -10A (VGS = -10V)
with a 25V gate rating. This device is suitable for use as RDS(ON) < 18m (VGS = -10V)
a load switch or in PWM applications. Standard Product RDS(ON) < 36m (VGS = -5V)
AO4435 is Pb-free (meets ROHS & Sony 259
specifications).

SOIC-8 D
Top View

S D
S D
S D
G D G
S

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter Symbol 10 Sec Steady State Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS 25 V
Continuous Drain TA=25C -10 -8
Current A TA=70C ID -8 -6 A
B
Pulsed Drain Current IDM -80
TA=25C 3.1 1.7
Power Dissipation A PD W
TA=70C 2.0 1.1
Junction and Storage Temperature Range TJ, TSTG -55 to 150 C

Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t 10s 32 40 C/W
A RJA
Maximum Junction-to-Ambient Steady State 60 75 C/W
Maximum Junction-to-Lead C Steady State RJL 17 24 C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4435

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID = -250A, VGS = 0V -30 V
VDS = -30V, VGS = 0V -1
IDSS Zero Gate Voltage Drain Current A
TJ = 55C -5
IGSS Gate-Body leakage current VDS = 0V, VGS = 25V 100 nA
VGS(th) Gate Threshold Voltage VDS = VGS ID = -250A -1.7 -2.3 -3 V
ID(ON) On state drain current VGS = -10V, VDS = -5V -80 A
VGS = -10V, ID = -10A 15 18
RDS(ON) Static Drain-Source On-Resistance TJ=125C 22 27 m
VGS = -5V, ID = -5A 27 36
gFS Forward Transconductance VDS = -5V, ID = -10A 22 S
VSD Diode Forward Voltage IS = -1A,VGS = 0V -0.74 -1 V
IS Maximum Body-Diode Continuous Current -3.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1130 1400 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 240 pF
Crss Reverse Transfer Capacitance 155 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 5.8 8
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 18 24 nC
Qg(4.5V) Total Gate Charge 9.5
VGS=-10V, VDS=-15V, ID=-10A
Qgs Gate Source Charge 5.5 nC
Qgd Gate Drain Charge 3.3 nC
tD(on) Turn-On DelayTime 8.7 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=1.5, 8.5 ns
tD(off) Turn-Off DelayTime RGEN=3 18 ns
tf Turn-Off Fall Time 7 ns
trr Body Diode Reverse Recovery Time IF=-10A, dI/dt=100A/s 25 30 ns
Qrr Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/s 12 nC
A: The value of R JA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep T j=25C.
Rev0: Aug. 2007

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4435

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 80
VDS= -5V
-10V
-8V
60 -6V 60
-ID (A)

-ID(A)
40 40

-4.5V 125C
20 20
VGS= -4V
25C

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
-VDS (Volts) -VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

40 1.6

VGS=-5V VGS=-10V
Normalized On-Resistance

1.4 ID=-10A

30
RDS(ON) (m)

1.2

1.0 VGS=-5V
20 VGS=-10V
ID=-5A
0.8

10 0.6
0 5 10 IF=-6.5A,
15 dI/dt=100A/s
20 0 25 50 75 100 125 150 175
-ID (A) Temperature (C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

45 1E+01
ID=-10A
40 1E+00

35 1E-01 125C
RDS(ON) (m)

30 1E-02
-IS (A)

125C

25 1E-03 25C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS
20 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
1E-04 AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
25C
15 AND RELIABILITY WITHOUT 1E-05
FUNCTIONS NOTICE.

10 1E-06
3 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0

-VGS (Volts) -VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4435

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 2000

8 VDS=-15V
1500 Ciss
ID=-10A

Capacitance (pF)
-VGS (Volts)

6
1000
4
Coss
500
2

Crss
0 0
0 5 10 15 20 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000 1000
RDS(ON) limited TJ(Max)=150C
100 TA=25C
10s

100
-ID (Amps)

10 100s
Power (W)

1ms
1 10ms
100ms
10
TJ(Max)=150C
0.1 10s
TA=25C
DC
0.01
IF=-6.5A, dI/dt=100A/s 1
0.1 1 10 100
-VDS (Volts) 0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating Junction-
Operating Area (Note E)
to-Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZJA.RJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZJA Normalized Transient

RJA=75C/W
Thermal Resistance

0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
0.01 Ton
FUNCTIONS AND RELIABILITY WITHOUT
SingleNOTICE.
Pulse T

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com