Advanced Power MOSFET IRL530A

FEATURES
BVDSS = 100 V
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
RDS(on) = 0.12
n Lower Input Capacitance ID = 14 A
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 10 A (Max.) @ VDS = 100V
TO-220
n Lower RDS(ON) : 0.101 (Typ.)
1
2
3

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 100 V
Continuous Drain Current (TC=25) 14
ID A
Continuous Drain Current (TC=100) 9.9
IDM Drain Current-Pulsed 49 A
VGS Gate-to-Source Voltage 20 V
EAS Single Pulsed Avalanche Energy 261 mJ
IAR Avalanche Current 14 A
EAR Repetitive Avalanche Energy 6.2 mJ
dv/dt Peak Diode Recovery dv/dt 6.5 V/ns
Total Power Dissipation (TC=25) 62 W
PD
Linear Derating Factor 0.41 W/
Operating Junction and
TJ , TSTG - 55 to +175
Storage Temperature Range
Maximum Lead Temp. for Soldering
TL 300
Purposes, 1/8 from case for 5-seconds

Thermal Resistance
Symbol Characteristic Typ. Max. Units
RJC Junction-to-Case -- 2.41
RCS Case-to-Sink 0.5 -- /W
RJA Junction-to-Ambient -- 62.5

Rev. B1
 N-CHANNEL
IRL530A POWER MOSFET

Electrical Characteristics (TC=25 unless otherwise specified)

Symbol Characteristic Min. Typ. Max. Units Test Condition
BVDSS Drain-Source Breakdown Voltage 100 -- -- V VGS=0V,ID=250A
BV/TJ Breakdown Voltage Temp. Coeff. -- 0.1 -- V/ ID=250A See Fig 7
VGS(th) Gate Threshold Voltage 1.0 -- 2.0 V VDS=5V,ID=250A
Gate-Source Leakage , Forward -- -- 100 VGS=20V
IGSS nA
Gate-Source Leakage , Reverse -- -- -100 VGS=-20V
-- -- 10 VDS=100V
IDSS Drain-to-Source Leakage Current A
-- -- 100 VDS=80V,TC=150
Static Drain-Source
RDS(on) -- -- 0.12 VGS=5V,ID=7A
On-State Resistance

gfs Forward Transconductance -- 10.2 -- VDS=40V,ID=7A
Ciss Input Capacitance -- 580 755
VGS=0V,VDS=25V,f =1MHz
Coss Output Capacitance -- 140 175 pF
See Fig 5
Crss Reverse Transfer Capacitance -- 60 75
td(on) Turn-On Delay Time -- 10 30
VDD=50V,ID=14A,
tr Rise Time -- 11 30
ns RG=6
td(off) Turn-Off Delay Time -- 29 70
See Fig 13
tf Fall Time -- 15 40
Qg Total Gate Charge -- 16.9 24 VDS=80V,VGS=5V,
Qgs Gate-Source Charge -- 2.7 -- nC ID=14A
Qgd Gate-Drain(Miller) Charge -- 9.7 -- See Fig 6 & Fig 12

Source-Drain Diode Ratings and Characteristics

Symbol Characteristic Min. Typ. Max. Units Test Condition
IS Continuous Source Current -- -- 14 Integral reverse pn-diode
A
ISM Pulsed-Source Current -- -- 49 in the MOSFET
VSD Diode Forward Voltage -- -- 1.5 V TJ=25,IS=14A,VGS=0V
trr Reverse Recovery Time -- 109 -- ns TJ=25,IF=14A
Qrr Reverse Recovery Charge -- 0.41 -- C diF/dt=100A/s

Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=2mH, IAS=14A, VDD=25V, RG=27, Starting TJ =25
ISD14A, di/dt350A/s, VDDBVDSS , Starting TJ =25
Pulse Test : Pulse Width = 250s, Duty Cycle 2%
Essentially Independent of Operating Temperature
 N-CHANNEL
POWER MOSFET IRL530A
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
102
VGS
Top : 7.0 V
6.0 V
5.5 V
5.0 V

ID , Drain Current [A]

ID , Drain Current [A]

4.5 V 101
4.0 V
3.5 V
101 Bottom : 3.0 V

175 oC

100
25 oC @ Notes :
1. VGS = 0 V
@ Notes : 2. VDS = 40 V
100 1. 250 s Pulse Test - 55 oC 3. 250 s Pulse Test
2. TC = 25 oC
10-1
10-1 100 101 0 2 4 6 8 10
VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]

Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage
0.20
IDR , Reverse Drain Current [A]

VGS = 5 V
Drain-Source On-Resistance

0.15
101
RDS(on) , [ ]

0.10

100
VGS = 10 V
0.05
@ Notes :
175 oC 1. VGS = 0 V
@ Note : TJ = 25 oC 25 oC 2. 250 s Pulse Test
0.00 -1
10
0 15 30 45 60 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
ID , Drain Current [A] VSD , Source-Drain Voltage [V]

Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage
1000
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd 6
800 C iss Crss= Cgd VDS = 20 V
VGS , Gate-Source Voltage [V]

VDS = 50 V
Capacitance [pF]

VDS = 80 V
600
4
C oss

400 @ Notes :
1. VGS = 0 V
C rss 2
2. f = 1 MHz
200

@ Notes : ID = 14 A
00 0
10 101 0 3 6 9 12 15 18
VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC]
 N-CHANNEL
IRL530A POWER MOSFET

Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature

1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
RDS(on) , (Normalized)
BVDSS , (Normalized)

1.1
2.0

1.0 1.5

1.0
0.9 @ Notes : @ Notes :
1. V = 0 V 1. VGS = 5 V
GS 0.5
2. ID = 7 A
2. I = 250 A
D

0.8 0.0
-75 -50 -25 0 25 50 75 100 125 150 175 200 -75 -50 -25 0 25 50 75 100 125 150 175 200
o
TJ , Junction Temperature [ C] TJ , Junction Temperature [oC]

Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature
15
Operation in This Area
102 is Limited by R
DS(on)
ID , Drain Current [A]

ID , Drain Current [A]

12
100 s
1 ms
9
101
10 ms
DC
6
0
@ Notes :
10
1. T = 25 oC
C
3
2. T = 175 oC
J
3. Single Pulse
10-1 0 0
10 101 102 25 50 75 100 125 150 175
VDS , Drain-Source Voltage [V] Tc , Case Temperature [oC]

Fig 11. Thermal Response

Thermal Response

D=0.5
100
@ Notes :
0.2 o
1. Z J C (t)=2.41 C/W Max.

0.1 2. Duty Factor, D=t1 /t2

3. TJ M -TC =PD M *Z (t)
0.05 JC
Z (t) ,

10- 1 0.02 PDM

0.01 t1
JC

single pulse t2

10- 5 10- 4 10- 3 10- 2 10- 1 100 101

t 1 , Square Wave Pulse Duration [sec]
 N-CHANNEL
POWER MOSFET IRL530A
Fig 12. Gate Charge Test Circuit & Waveform

* Current Regulator
VGS
Same Type
50K as DUT Qg
12V 200nF
300nF 10V

VDS
VGS Qgs Qgd

DUT
3mA
R1 R2

Current Sampling (IG) Current Sampling (ID)

Charge
Resistor Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

RL
Vout Vout
90%
Vin VDD
( 0.5 rated VDS )
RG
DUT 10%
Vin
10V
td(on) tr td(off)
tf
t on t off

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

1 BVDSS
LL EAS = ---- LL IAS2 --------------------
VDS 2 BVDSS -- VDD
Vary tp to obtain ID BVDSS
required peak ID IAS

RG C VDD ID (t)
DUT
VDD VDS (t)
5V
tp tp Time
 N-CHANNEL
IRL530A POWER MOSFET

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

--

IS
L

Driver
VGS
RG Same Type
as DUT VDD

VGS dv/dt controlled by RG

IS controlled by Duty Factor D

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

IS
( DUT ) di/dt

IRM
Body Diode Reverse Current
VDS
( DUT ) Body Diode Recovery dv/dt

Vf VDD

Body Diode
Forward Voltage Drop
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Definition of Terms

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Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

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any time without notice in order to improve design.

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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H7