SemiWell Semiconductor BT139-600

Bi-Directional Triode Thyristor

Symbol
2.T2
Features

Repetitive Peak Off-State Voltage : 600V

R.M.S On-State Current ( IT(RMS)= 16 A ) 3.Gate
High Commutation dv/dt 1.T1
Isolation Voltage ( VISO = 1500V AC )

TO-220
General Description

This device is suitable for AC switching application, phase

control application such as fan speed and temperature mod-
ulation control, lighting control and static switching relay.

1
2
3

Absolute Maximum Ratings ( TJ = 25C unless otherwise specified )

Symbol Parameter Condition Ratings Units

VDRM Repetitive Peak Off-State Voltage 600 V

IT(RMS) R.M.S On-State Current TC = 100C 16 A

One Cycle, 50Hz/60Hz, Peak,

ITSM Surge On-State Current 145/155 A
Non-Repetitive

I2 t I2t for fusing t =10ms 105 A2 s

PGM Peak Gate Power Dissipation 5.0 W

PG(AV) Average Gate Power Dissipation Over any 20ms period 0.5 W

IGM Peak Gate Current 2.0 A

VGM Peak Gate Voltage 10 V

TJ Operating Junction Temperature - 40 ~ 125 C

TSTG Storage Temperature - 40 ~ 150 C

Mass 2.0 g

Jan, 2004. Rev. 0 1/5

copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
BT139-600

Electrical Characteristics
Ratings
Symbol Items Conditions Unit
Min. Typ. Max.

Repetitive Peak Off-State VD = VDRM, Single Phase, Half Wave

IDRM 2.0 mA
Current TJ = 125 C

VTM Peak On-State Voltage IT = 20 A, Inst. Measurement 1.6 V

I+GT1 25

I -GT1 Gate Trigger Current VD = 6 V, RL=10 25 mA

I -GT3 25

V+GT1 1.5

V-GT1 Gate Trigger Voltage VD = 6 V, RL=10 1.5 V

V-GT3 1.5

VGD Non-Trigger Gate Voltage TJ = 125 C, VD = 1/2 VDRM 0.2 V

Critical Rate of Rise Off-State TJ = 125 C, [di/dt]c = -6.0 A/ms,

(dv/dt)c
Voltage at Commutation VD=2/3 VDRM
10 V/

IH Holding Current 20 mA

Rth(j-c) Thermal Impedance Junction to case 1.2 C/W

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 BT139-600

Fig 1. Gate Characteristics Fig 2. On-State Voltage

2
10
VGM (10V)
1
10
PGM (5W) o
TJ = 125 C

On-State Current [A]

Gate Voltage [V]

PG(AV) (0.5W) 1
10
25

IGM (2A)
0
10
o
TJ = 25 C

0
10

VGD (0.2V)
-1
10
10
1
10
2
10
3 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Gate Current [mA] On-State Voltage [V]

Fig 3. On State Current vs. Fig 4. On State Current vs.

Maximum Power Dissipation Allowable Case Temperature
25 130
Allowable Case Temperature [ oC]

o
= 180 125
2
20 o
Power Dissipation [W]

= 150
o 120
= 120
360 o
15 o = 30
: Conduction Angle = 90 115
o
= 60
o = 60
110 2
10 o
= 90
o o
= 30 105
360
= 120
5 o
= 150
100 : Conduction Angle o
= 180
0 95
0 2 4 6 8 10 12 14 16 18 20 0 4 8 12 16 20
RMS On-State Current [A] RMS On-State Current [A]

Fig 5. Surge On-State Current Rating Fig 6. Gate Trigger Voltage vs.
( Non-Repetitive ) Junction Temperature
200 10
Surge On-State Current [A]

150
VGT (25 C)

60Hz
VGT (t C)
o
o

100 1

50 50Hz

0 0.1
10
0
10
1
10
2 -50 0 50 100 150
o
Time (cycles) Junction Temperature [ C]

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BT139-600

Fig 7. Gate Trigger Current vs. Fig 8. Transient Thermal Impedance

Junction Temperature
1
10 10

Transient Thermal Impedance [ C/W]

o
0
10
IGT (25 C)
IGT (t C)

+
o

I
o

1 GT1
_
I GT1

-1
10
_
I GT3

-2
0.1 10
-50 0 50 100 150 10
-3
10
-2 -1
10
0
10
1
10
o
Junction Temperature [ C] Time (sec)

Fig 9. Gate Trigger Characteristics Test Circuit

10 10 10

A A A
6V 6V 6V
RG RG RG
V V V

Test Procedure Test Procedure Test Procedure

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 BT139-600
TO-220 Package Dimension

mm Inch
Dim.
Min. Typ. Max. Min. Typ. Max.
A 9.7 10.1 0.382 0.398
B 6.3 6.7 0.248 0.264
C 9.0 9.47 0.354 0.373
D 12.8 13.3 0.504 0.524
E 1.2 1.4 0.047 0.055
F 1.7 0.067
G 2.5 0.098
H 3.0 3.4 0.118 0.134
I 1.25 1.4 0.049 0.055
J 2.4 2.7 0.094 0.106
K 5.0 5.15 0.197 0.203
L 2.2 2.6 0.087 0.102
M 1.25 1.55 0.049 0.061
N 0.45 0.6 0.018 0.024
O 0.6 1.0 0.024 0.039
3.6 0.142

H I
E A

B
F

M
G L
1
D 2 1. T1
3 2. T2
3. Gate
J N O
K

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