2N7002

60V N-Channel Enhancement Mode MOSFET

FEATURES

0.006(0.15)MIN.
RDS(ON), VGS@10V,IDS@500mA=5 0.120(3.04)
0.110(2.80)

RDS(ON), [email protected],IDS@75mA=7.5

Advanced Trench Process Technology

0.056(1.40)

High Density Cell Design For Ultra Low On-Resistance 0.047(1.20)

Specially Designed for Battery Operated Systems, Solid-State Relays 0.079(2.00) 0.008(0.20)
0.070(1.80) 0.003(0.08)

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

Lead free in comply with EU RoHS 2011/65/EU directives 0.004(0.10) 0.044(1.10)
0.035(0.90)
Green molding compound as per IEC61249 Std. . (Halogen Free) 0.000(0.00)

0.020(0.50)
0.013(0.35)

MECHANICALDATA
Case : SOT-23 Package
Terminals : Solderable per MIL-STD-750,Method 2026
Approx. Weight : 0.0003 ounces, 0.008 grams
Marking : S72

Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted )

PA RA M E TE R S ym b o l Li mi t U ni t s

D r a i n- S o ur c e Vo l t a g e VD S 60 V

G a t e - S o ur c e Vo l t a g e VGS +20 V

C o nt i nuo us D r a i n C ur r e nt ID 250 mA

1)
P ul s e d D r a i n C ur r e nt ID M 1300 mA

O
TA = 2 5 C 350
M a xi m um P o w e r D i s s i p a t i o n PD mW
TA = 7 5 O C 210

O
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e TJ , TS T G -5 5 to + 1 5 0 C

Juncti on-to Ambi ent Thermal Resi stance(PC B mounted)2 RJ A 357 O

C /W

Note:1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 10 sec

August 29,2013-REV.03 PAGE . 1

 2N7002
ELECTRICALCHARACTERISTICS

P a ra me te r S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s

S ta ti c

D r a i n- S o ur c e B r e a k d o w n Vo l t a g e B V DSS V G S = 0 V , ID = 1 0 u A 60 - - V

G a t e Thr e s ho l d Vo l t a g e V G S ( t h) V D S = V G S , ID = 2 5 0 u A 1 - 2 .5 V

D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( o n) VGS=4.5V, I D=75mA - - 7 .5

D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( o n) VGS=10V, I D=500mA - - 5

Ze r o G a t e Vo l t a g e D r a i n C ur r e nt ID S S VDS=60V, VGS=0V - - 1 uA

Gate Body Leakage IG S S V G S =+ 2 0 V , V D S = 0 V - - +100 nA

Forward Transconductance g fS V D S = 1 5 V , ID = 2 5 0 m A 200 - - mS

Dynamic

To t a l G a t e C h a r g e Qg - 0 .6 0 .7

V D S = 1 5 V , ID = 5 0 0 m A
G a t e - S o ur c e C ha r g e Qgs - 0 .1 - nC
VDD=4.5V

G a t e - D r a i n C ha r g e Qgd - 0 .0 8 -

Tu r n - O n Ti m e ton VDD=10V , RL=20 - 9 15

ID=500mA , VGEN=10V ns
Tu r n - O f f Ti m e t o ff RG=10 - 21 26

In p u t C a p a c i t a n c e C iss - - 50

V D S = 2 5 V , V GS = 0 V
O ut p ut C a p a c i t a nc e C oss - - 25 pF
f=1 .0 MHZ

R e v e r s e Tr a n s f e r C a p a c i t a n c e C rss - - 5

S o ur c e - D r a i n D i o d e

M a x. D i o d e F o r w a r d C ur r e nt Is - - - 250 mA

D i o d e F o rwa rd Vo lta g e V SD IS = 2 5 0 m A , V G S = 0 V - 0 .9 3 1 .2 V

Switching V DD Gate Charge V DD

Test Circuit Test Circuit
V IN RL V GS RL

V OUT

1mA
RG

RG

August 29,2013-REV.03 PAGE . 2

 2N7002
O
Typical Characteristics Curves (TA=25 C,unless otherwise noted)

1.2 1.2
VDS =10V
ID - Drain-to-Source Current (A)

ID - Drain Source Current (A)

V GS= 6.0~10V
1 5.0V 1
4.0V
0.8 0.8

0.6 0.6

0.4 0.4
o
3.0V T J=25 C
0.2 0.2

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

Fig. 1-TYPICAL FORWARD

FIG.1- Output CHARACTERISTIC
Characteristic FIG.2- Transfer Characteristic

5 10
I D =500mA
RDS(ON) - On-Resistance ( W )
RDS(ON) - On-Resistance ( W )

4 8

3 V GS = 4.5V 6

2 4 T J=125 oC

1 VGS=10V 2
o
T J=25 C
0 0
0 0.2 0.4 0.6 0.8 1 1.2 2 3 4 5 6 7 8 9 10

ID - Drain Current (A) V GS - Gate-to-Source Voltage (V)

FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage

2
RDS(ON) - On-Resistance(Normalized)

VGS =10V
1.8
ID =500mA
1.6

1.4

1.2

0.8

0.6

0.4
-50 -25 0 25 50 75 100 125 150
o
TJ - Junction Temperature ( C)

FIG.5- On Resistance vs Junction Temperature

August 29,2013-REV.03 PAGE . 3

 2N7002

10
Vgs

V GS - Gate-to-Source Voltage (V)

VDS=15V
Qg
8 ID=500mA

2
Vgs(th) Qsw

0
Qg(th)
0 0.2 0.4 0.6 0.8 1
Qgs Qgd Qg
Qg - Gate Charge (nC)

Fig.6 - Gate Charge Waveform Fig.7 - Gate Charge

Vth - G-S Th r esh o l d Vo l tag e (NORMA L IZED)

1.2 73
BVDSS - Breakdown Voltage (V)

ID =250 m A I D = 250 m A
72
1.1
71
1 70
69
0.9
68
0.8 67
66
0.7
65
0.6 64
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
o o
TJ - Junction Temperature ( C) TJ - Junction Temperature ( C)

Fig.8 - Threshold Voltage vs Temperature Fig.9 - Breakdown Voltage vs Junction Temperature

10 80
VGS = 0V f = 1MHz
70 V GS = 0V
IS - Source Current (A)

60
C - Capacitance (pF)

1 o
T J=25 C 50
Ciss
40
TJ =125 oC
T J=-55 oC
0.1 30

20
Coss
10
0.01 Crss
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0
0 5 10 15 20 25
VSD - Source-to-Drain Voltage (V) VDS - Drain-to-Source Voltage (V)

Fig.10 - Source-Drain Diode Forward Voltage Fig.11 - Capacitance vs Drain to Source Voltage

August 29,2013-REV.03 PAGE . 4

 2N7002

MOUNTING PAD LAYOUT

(0.90) MIN.
0.035 MIN. 0.031 MIN.
(0.80) MIN.

(1.10)

(2.00)
0.043

0.078
0.037
(0.95)

0.043
(1.10)

0.106
(2.70)

ORDER INFORMATION

Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel

August 29,2013-REV.03 PAGE . 5

 2N7002

Part No_packing code_Version

2N7002_R1_00001
2N7002_R2_00001

For example :
RB500V-40_R2_00001
Serial number
Part No. Version code means HF
Packing size code means 13"
Packing type means T/R

Packing Code XX Version Code XXXXX

Packing type 1st Code Packing size code 2nd Code HF or RoHS 1st Code 2nd~5th Code

Tape and Ammunition Box

A N/A 0 HF 0 serial number
(T/B)
Tape and Reel
R 7" 1 RoHS 1 serial number
(T/R)
Bulk Packing
B 13" 2
(B/P)
Tube Packing
T 26mm X
(T/P)
Tape and Reel (Right Oriented)
S 52mm Y
(TRR)
Tape and Reel (Left Oriented) PANASERT T/B CATHODE UP
L U
(TRL) (PBCU)
PANASERT T/B CATHODE DOWN
FORMING F D
(PBCD)

August 29,2013-REV.03 PAGE . 6

 2N7002

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of fitness for particular purpose, non-infringement and merchantability.

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August 29,2013-REV.03 PAGE . 7

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