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Unit-I Assignment Sub:Power Electronics Class: Iiird B.Tech-I Sem Part-A

The document contains an assignment on power electronics for a third semester bachelor of technology class. It includes two parts - Part A contains 11 short answer questions related to transistors, thyristors, MOSFETs, IGBTs and their characteristics. Part B contains 8 numerical problems related to design of circuits using thyristors, MOSFETs, rectifiers and analyzing their static and dynamic characteristics. The students are asked to answer all the questions covering topics like switching conditions of transistors, comparison of power MOSFETs and BJTs, latching and holding currents of SCRs, turn off methods and applications of thyristors.

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srikaanth06
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93 views3 pages

Unit-I Assignment Sub:Power Electronics Class: Iiird B.Tech-I Sem Part-A

The document contains an assignment on power electronics for a third semester bachelor of technology class. It includes two parts - Part A contains 11 short answer questions related to transistors, thyristors, MOSFETs, IGBTs and their characteristics. Part B contains 8 numerical problems related to design of circuits using thyristors, MOSFETs, rectifiers and analyzing their static and dynamic characteristics. The students are asked to answer all the questions covering topics like switching conditions of transistors, comparison of power MOSFETs and BJTs, latching and holding currents of SCRs, turn off methods and applications of thyristors.

Uploaded by

srikaanth06
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Unit-I Assignment

Sub:POWER ELECTRONICS Class: IIIrd B.Tech-I Sem

PART-A

1. What are the conditions under which a transistor operates as a switch?


(S1/R/R13/Nov-
16)[3M]
2. Compare power MOSFETS with BJTs? (S2/R/R13/Nov-16)[3M]
3. Define latching and holding currents as applicable to SCR.
(S2/R/R13/Nov-
16)[3M]
4. Explain briefly any thyristor turn-off method. (S3/R/R13/Nov-16)[4M]
5. Describe the significance of high di/dt and dv/dt in SCRs
(S3/R/R13/Nov-
16)[3M]
6. Define Latching and Holding currents. (S4/R/R13/Nov-16)[4M]
7. Draw and explain the transfer characteristics of MOSFET.
(S1/R/R13/Nov-
15)[4M]
8. Draw and explain the output characteristics of IGBT
(S2/R/R13/Nov-
15)[4M]
9. Define turn off time of an SCR. (S3/R/R13/Nov-15)[3M]
10. What is the most effective method of turning on an SCR? Explain
(S4/R/R13/Nov-
15)[3M]
11. What is TRIAC? What are the effective modes of operation of a
TRIAC? (S4/R/R13/Nov-15)[3M]

PART-B

1 a) Briefly explain the V-I characteristics of an IGBT.


(S1/R/R13/Nov-
16)[8M]

b) Explain the dynamic characteristics of SCR. [8M]


2 a) Explain the transfer and output characteristics of MOSFETs.
(S2/R/R13/Nov-
16)[8M]

b) Explain the basic operator of a SCR. [8M]

3 a) Describe the different modes of operation of a thyristor with the help of its
Static I-V characteristics. (S2/R/R13/Nov-16)[9M]

b) Following are the specifications of a thyristoroperating from a peak supply of


500 V. Repetitive peak current Ip= 250 A (di/dt)max= 60A/s , (dVa/dt)max=
200V/s .Take a safety factor of 2 for the three specifications mentioned above.
Design a suitable Snubber circuit if the min. load resistance is 20 . Take =
0.65 [7M]

4 a) Explain about snubber circuit and derive the condition for Rs?
(S1/R/R13/Nov-
15)[8M]

b) What is a MOSFET? Explain its V-I characteristics briefly. Also write its
advantages over other switches. [8M]

5 a) Discuss about switching characteristics of an SCR during turn on and off.


(S2/R/R13/Nov-15)[8M]

b) Explain the diode bridge rectifier with R load and capacitive filter with neat
circuit diagram and necessary waveforms. [8M]

6 a) Explain various turn-on methods of an SCR. (S2/R/R13/Nov-15)[8M]

b) A thyristor operating from a peak supply voltag e of 400V has the following
specifications: Repetitive peak current, Ip= 200A, (di/dt)max= 50A/s,
(dv/dt)max = 200V/s. Choosing a factor of safety 2 for I p, (di/dt)max and
(dv/dt)max , design a suitable snubber circuit. The minimum value of load
resistance is 10? [8M]

7 a) Explain the static V-I characteristics of a thyristors and different modes


of operation. (S3/R/R13/Nov-15)[8M]

b) Explain the diode bridge rectifier with R load and the output voltage
waveform. [8M]

8 a) Explain turn on characteristics of SCR and mention different factors that


influence the turn on time of SCR. (S4/R/R13/Nov-15)[6M]
b) Explain turn-on and turn-off process of GTO with necessary diagram. [6M]

c) Why is pulse train gating preferred over pulse gating? [4M]

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