Scribd Logo
Upload

Welcome to Scribd!

  • 41 views

    Semiconductor Switches

    Uploaded by

    Archana Diwakar Ranjish
    Semiconductor switches are desired to have high blocking voltages, high conducting currents, low on-state resistance and power dissipation. Some common power switches discussed are diodes, thyristors, MOSFETs, IGBTs, GTOs, SITHs and LASCRs. MOSFETs and IGBTs are voltage controlled, fully-controlled switches with low on-state resistance used in applications like DC-DC converters and inverters. The design of power electronic circuits requires consideration of the control strategy and protection of the power devices.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Semiconductor Switches

    Uploaded by

    Archana Diwakar Ranjish
    41 views21 pages
    Semiconductor switches are desired to have high blocking voltages, high conducting currents, low on-state resistance and power dissipation. Some common power switches discussed are diodes, thyristors, MOSFETs, IGBTs, GTOs, SITHs and LASCRs. MOSFETs and IGBTs are voltage controlled, fully-controlled switches with low on-state resistance used in applications like DC-DC converters and inverters. The design of power electronic circuits requires consideration of the control strategy and protection of the power devices.

    Original Description:

    introduction to power electronics

    Original Title

    Intro Presentation

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    Semiconductor switches are desired to have high blocking voltages, high conducting currents, low on-state resistance and power dissipation. Some common power switches discussed are diodes, thyristors, MOSFETs, IGBTs, GTOs, SITHs and LASCRs. MOSFETs and IGBTs are voltage controlled, fully-controlled switches with low on-state resistance used in applications like DC-DC converters and inverters. The design of power electronic circuits requires consideration of the control strategy and protection of the power devices.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    41 views21 pages

    Semiconductor Switches

    Uploaded by

    Archana Diwakar Ranjish
    Semiconductor switches are desired to have high blocking voltages, high conducting currents, low on-state resistance and power dissipation. Some common power switches discussed are diodes, thyristors, MOSFETs, IGBTs, GTOs, SITHs and LASCRs. MOSFETs and IGBTs are voltage controlled, fully-controlled switches with low on-state resistance used in applications like DC-DC converters and inverters. The design of power electronic circuits requires consideration of the control strategy and protection of the power devices.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 21

    SEMICONDUCTOR

    SWITCHES
    DESIRED QUALITIES IN SWITCHES

    High forward & reverse blocking voltage (OFF state)

    High conducting current or near zero on state resistance

    Near zero off state current or infinite off state resistance

    Near zero on state voltage drop

    Small turn-on and turn-off transition times

    High switching frequency

    Less power dissipation (Pon, Poff, Psw, PG)


    SOME POWER SWITCHES
    DIODE

    THYRISTOR

    MOSFET

    IGBT

    MCT

    SITH

    LASCR

    GTO
    Signal Diode (Recap)

    Diode consists of two doped semiconductors, one of a P-type and other of N-type.

    P-type: holes majority carriers ; N-type: electrons majority carriers.

    Diffusion: electrons from N-type region flow to P-type region and holes flow from
    P-type to the N-type region

    electric field is created with opposite polarities to the respective (n-type or p-type)
    regions which blocks the further transfer of both carriers

    potential barrier is formed in between the semiconductors which is called


    Depletion region.
    Power Diode

    Larger size

    Vertically oriented

    n- drift region between P and N layers


    establishes the blocking voltage by
    absorbing the depletion layer

    Max current depends on cross-sectional area


    SILICON CONTROLLED RECTIFIER (SCR) - THYRISTOR

    3 terminals

    Turned on by forward biasing & injecting gate current

    Turn off by reducing forward current to zero or reverse biasing SCR


    DIAC (DIODE FOR AC)

    Bidirectional diode

    uncontrolled

    TRIAC (TRIODE FOR AC)


    Bidirectional thyristor

    Semi-controlled

    3 terminals MT1, MT2, G

    4 modes of operation

    Used in ac circuits
    LASCR (LIGHT ACTIVATED SCR)

    Turned on by direct radiation of light

    Used where simultaneously many


    switches have to be turned on

    GTO (GATE TURN-OFF THYRISTOR)

    Turn on like SCR

    Turned off by negative gate pulse

    Fully controlled
    SITH (STATIC INDUCTION THYRISTOR)
    Field controlled thyristor

    Normally ON device

    Reverse voltage between gate


    & cathode to keep it OFF

    No reverse blocking capability

    Fast switching

    N-MCT (N-MOS CONTROLLED THYRISTOR)


    Combo of SCR & Mosfet

    Two mosfets ON-FET and OFF-FET

    Two types n-mct and p-mct

    N-mct turned ON by giving positive


    gate-cathode voltage

    N-mct turned OFF by giving negative


    gate-cathode voltage
    N-CHANNEL MOSFET
    (METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR)

    Three terminals

    Fully-controlled

    Voltage-controlled

    Application of positive
    VGS turns ON when forward biased

    IGBT
    (INSULATED GATE BIPOLAR JUNCTION TRANSISTOR)
    Three terminals

    Fully-controlled

    Voltage-controlled

    Application of positive
    VGE turns ON when forward biased

    Lower on-state resistance compared to mosfet


    CLASSIFICATION OF SWITCHES

    1. Control : Uncontrolled turn-on & turn-off


    Semi controlled ( controlled turn-on, uncontrolled turn-off)
    Fully controlled (controlled turn-on and turn off)

    2. Gate signal requirement : Pulse triggered


    Edge triggered

    3. Voltage blocking capability : Unipolar


    Bipolar

    4. Direction of conduction: Unidirectional


    Bidirectional
    CONTROL OF SWITCHES

    THYRISTOR SWITCH

    GTO SWITCH

    MOSFET SWITCH
    TYPES OF POWER ELECTRONIC CIRCUITS
    DIODE RECTIFIERS
    CONTROLLED RECTIFIERS
    AC VOLTAGE CONTROLLER
    DC-DC CONVERTER
    DC-AC CONVERTER (INVERTER)
    DESIGN OF POWER ELECTRONICS CIRCUITS

    Design of power circuits

    Protection of power devices

    Determination of the control strategy

    Design of logic and gating circuits


    PERIPHERAL EFFECTS
    Switching of semiconductor devices current & voltage harmonics
    into supply system & converter output

    Result distorted output, interference with communication &


    signaling circuits, electromagnetic radiation, erroneous gate signals.

    Solution? Filters introduced to reduce harmonics , Grounded


    shielding (reflects EMI or conducts it to ground)
    MOSFET

    You might also like