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Basic Electronics - 15ELN15: Prof. Dr. Noorullah Shariff C

This document contains 13 questions and answers about semiconductor diodes and applications from a Basic Electronics course. Question 1 explains the process of formation of the depletion region in a pn junction. Question 2 discusses the behavior of a pn junction under no bias, forward bias, and reverse bias conditions. The remaining questions cover diode parameters, the effect of temperature on diode characteristics, load lines, determining resistance from diode characteristics, calculating reverse saturation current, and the workings of half wave, center tapped full wave, and bridge full wave rectifiers.

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Noorullah Shariff
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114 views4 pages

Basic Electronics - 15ELN15: Prof. Dr. Noorullah Shariff C

This document contains 13 questions and answers about semiconductor diodes and applications from a Basic Electronics course. Question 1 explains the process of formation of the depletion region in a pn junction. Question 2 discusses the behavior of a pn junction under no bias, forward bias, and reverse bias conditions. The remaining questions cover diode parameters, the effect of temperature on diode characteristics, load lines, determining resistance from diode characteristics, calculating reverse saturation current, and the workings of half wave, center tapped full wave, and bridge full wave rectifiers.

Uploaded by

Noorullah Shariff
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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Basic Electronics -15ELN15

Prof. Dr. Noorullah Shariff C.


Semiconductor Diode & Applications, BJT(Unit-1)
S No Question and Answer Marks Mon
th-
year
1 Q. Explain the process of formation of depletion region in
pn junction
A.
To pure semiconductor if trivalent impurity is added it
becomes P-type semiconductor & on the other hand if
pentavalent impurity is added, it becomes a N-type
semiconductor. P-type and N-type are joined to form a PN
junction.
When PN junction is formed majority carriers (holes) from
P-region diffuse into N-region & majority carriers
(electrons) from N- region diffuse into P- region.
This leads to recombination of electrons & holes in
a narrow region on both sides of the junction
resulting in a region devoid of free charge carriers
known as depletion region.
Depletion region leads to uncovered fixed positive
ions on N side & uncovered fixed negative ions on
P side setting up electric field (barrier potential) as
shown in the fig below.
2 Q. Explain the operation of PN junction under forward &
reverse bias
OR
Draw & Explain the V-I characteristic of SI & Ge PN
junction diode
OR
Discuss the behavior of p-n junction under, no bias,
forward bias & reverse bias

A. NO BIAS:
Majority carriers (holes) from P-region diffuse into N-
region & majority carriers (electrons) from N- region
diffuse into P- region.
This leads to recombination of electrons & holes in
a narrow region on both sides of the junction
resulting in a region devoid of free charge carriers
known as depletion region.
Depletion region leads to uncovered fixed positive
ions on N side & uncovered fixed negative ions on
P side setting up electric field (barrier potential) as
shown in the fig below.

FORWARD BIAS:

REVERSE BIAS:

3 Q. Define following diode parameters Knee Voltage,


Maximum forward current, Peak Inverse Voltage( PIV),
Reverse breakdown voltage, Maximum power rating,
dynamic resistance
A.
4 Q. Explain the effect of temperature on diode
charecterstic & power rating of diode
A.

5 Q. Draw the DC Load Line on diode characteristic &


explain
A.

6 Q. For the Circuit Shown in Fig draw the load line & locate
Q pt

A.

7 Q. The incremental change in voltage & current is 0.19V


& 37.6 mA respectively from the forward characteristic of
a diode. Determine the ac resistance of the junction
A.

8 Q. Calculate the reverse saturation current for Si diode


which passes a current of 10 mA at 270C for a forward
bias diode
A.

9 Q. If a Diode with 700mW max power dissipation at 25 0 C


has a 5mW/0C deviating factor. If forward voltage drop
remains constant at 0.7V, calculate the max forward
current at temp 250 C & 650 C.
A.

10 Q. Explain the working of a Half Wave Rectifier


A.
11 Q. What is the need for capacitor filter? For a Half wave rectifier
explain the operation of C filter

12 Q Explain the operation of a Center Tapped Full Wave Rectifier

A.

13 Q. Explain the operation of a Full Wave Bridge Rectifier

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