NTE2349 (NPN) & NTE2350 (PNP)
Silicon Darlington Transistors
High Current, General Purpose
Description:
The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3
type package designed for use as output devices in general purpose amplifier applications.
Features:
D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A
hFE = 400 (Min) @ IC = 50A
D Diode Protection to Rated IC
D Monolithic Construction w/BuiltIn BaseEmitter Shunt Resistor
D Junction Temperature to +200C
Absolute Maximum Ratings:
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
CollectorBase Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
EmitterBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W
Derate Above 25C @ TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.71W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +200C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.584C
Lead Temperature (During Soldering, 10sec Max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +275C
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage V(BR)CEO IC = 100mA, IB = 0 120 V
CollectorEmitter Leakage Current ICER VCE = 120V, RBE = 1k 2 mA
VCE = 120V, RBE = 1k, TC = +150C 10 mA
ICEO VCE = 50V, IB = 0 2 mA
Emitter Cutoff Current IEBO VBE = 5V, IC = 0 2 mA
Electrical Characteristics (Contd): (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain hFE IC = 25A, VCE = 5V 1000 18000
IC = 50A, VCE = 5V 400
CollectorEmitter Saturation Voltage VCE(sat) IC = 25A, IB = 250mA 2.5 V
IC = 50A, IB = 500mA 3.5 V
BaseEmitter Saturation Voltage VBE(sat) IC = 25A, IB = 200mA 3.0 V
IC = 50A, IB = 300mA 4.5 V
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
Schematic Diagram
C C
B B
E E
NPN PNP
.135 (3.45) Max
.350 (8.89) .875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min .061 (1.55) Max
Emitter 1.187
(30.16)
.215 (5.45) .665
(16.9)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
.525 (13.35) R Max
Base Collector/Case
