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    Sample Design of Small Signal Amplifier

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    efren6716
    This document describes a cascaded common emitter amplifier configuration with two stages. Each stage uses an NPN general purpose transistor in an emitter bias configuration. This provides high input impedance, relatively low output impedance, and stable operating point despite variations in the transistor's B parameter. The base, collector, and emitter resistors determine properties like gain, input/output impedance, and feedback stabilization. A schematic diagram shows the two transistor stages coupled together. Electrical characteristics of the BC547B transistor used in each stage are also provided.

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    Sample Design of Small Signal Amplifier

    Uploaded by

    efren6716
    134 views12 pages
    This document describes a cascaded common emitter amplifier configuration with two stages. Each stage uses an NPN general purpose transistor in an emitter bias configuration. This provides high input impedance, relatively low output impedance, and stable operating point despite variations in the transistor's B parameter. The base, collector, and emitter resistors determine properties like gain, input/output impedance, and feedback stabilization. A schematic diagram shows the two transistor stages coupled together. Electrical characteristics of the BC547B transistor used in each stage are also provided.

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    Small Signal Amplifier design

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    This document describes a cascaded common emitter amplifier configuration with two stages. Each stage uses an NPN general purpose transistor in an emitter bias configuration. This provides high input impedance, relatively low output impedance, and stable operating point despite variations in the transistor's B parameter. The base, collector, and emitter resistors determine properties like gain, input/output impedance, and feedback stabilization. A schematic diagram shows the two transistor stages coupled together. Electrical characteristics of the BC547B transistor used in each stage are also provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    134 views12 pages

    Sample Design of Small Signal Amplifier

    Uploaded by

    efren6716
    This document describes a cascaded common emitter amplifier configuration with two stages. Each stage uses an NPN general purpose transistor in an emitter bias configuration. This provides high input impedance, relatively low output impedance, and stable operating point despite variations in the transistor's B parameter. The base, collector, and emitter resistors determine properties like gain, input/output impedance, and feedback stabilization. A schematic diagram shows the two transistor stages coupled together. Electrical characteristics of the BC547B transistor used in each stage are also provided.

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    © All Rights Reserved
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    of 12

    ALEJOS, BRYAN CHRISTIAN D.

    CASCADED SYSTEM: TWO COMMON EMITTER ,EMITTER BIAS (UNBYPASSED) CONFIGURATION

    97
    I.CIRCUIT DESCRIPTION

    The combined configuration of two common emitter, emitter configuration


    biasing will provide HIGH input impedance, relatively LOW output impedance as per
    required and stable operating point in case of B parameter variation .

    First Stage and Second Stage:

    The two stages are two CE emitter bias configurations coupled together that
    composed of base resistor, collector resistor and emitter resistor and general purpose
    transistors. The base resistor determines which appropriate base current will operate
    theamplifier without distortion, the emitter resistor is one of the factors in determining
    the input impedance and voltage gain and it provides a negative feedback in
    base resistor in case of change in HFE parameter, thus it would stabilized the
    amplifying device. The collector resistor is one of the factors in determining the output
    impedance and the voltage gain of the amplifying device. The final output
    voltage signal is in phase with the input voltage signal because the product of its
    voltage gain is positive.The trade-off in stabilizing the circuit is that the possible voltage
    gain is not maximize.
    II. Schematic Diagram
    ALEJOS, BRYAN CHRISTIAN D.
    ALEJOS, BRYAN CHRISTIAN D.
    ALEJOS, BRYAN CHRISTIAN D.
    ALEJOS, BRYAN CHRISTIAN D.
    ALEJOS, BRYAN CHRISTIAN D.
    BC547B
    General Purpose Transistor
    Features:
    NPN general purpose transistors, especially suited for use in driver stages of audio
    amplifiers, low noise input stages of tape recorders, HI-FI amplifiers, signal processing
    circuits of television receivers.

    TO-92 Plastic Package Dimensions Minimum Maximum

    A 4.32 5.33
    B 4.45 5.20
    C 3.18 4.19
    D 0.41 0.55
    E 0.35 0.50
    F 5
    G 1.40
    1.14
    H 1.53
    K 12.70 -
    Dimensions : Millimetres

    Pin Configuration:
    1. Collector
    2. Base
    3. Emitter

    Page <1> 12/05/08 V1.1


    BC547B
    General Purpose Transistor
    Absolute Maximum Ratings (Ta = 25C unless otherwise specified)
    Parameters Symbol Value Unit

    Collector Emitter Voltage VCEO 45

    Collector Emitter Voltage VCES


    50 V
    Collector Base Voltage VCBO

    Emitter Base Voltage VEBO 6.0

    Collector Current Continuous IC 100


    Peak ICM 200

    Base Current Peak IBM mA


    200
    Emitter Current Peak IEM

    Power Dissipation at Ta = 25C 500 mW


    PTA
    Derate above 25C 4.0 mW/C

    Storage Temperature Tstg -65 to +150


    C
    Junction Temperature Tj 150

    Thermal Resistance

    Junction to Ambient Rth (j-a) 250 C/W

    Electrical Characteristics (Ta = 25C unless otherwise specified)


    Parameters Symbol Test Condition Value Unit

    Collector Emitter Voltage VCEO IC = 1mA, IB = 0 >45

    Collector Base Voltage VCBO IC = 10A, IE = 0 >50 V

    Emitter Base Voltage VEBO IE = 10A, IC = 0 >6.0


    VCB = 30V, IE = 0
    <50 nA
    ICBO TJ = 150C
    <5.0 A
    Collector Cut off Current VCB = 30V, IE = 0
    VCE = 50V, VBE = 0
    <15 nA
    ICES TJ = 125C

    Collector Cut off Current VCE = 50V, VBE = 0 <4.0 A

    DC Current Gain hFE IC = 2mA, VCE = 5V 200 -


    IC = 10mA, IB = 0.5mA <0.25
    Collector Emitter Saturation Voltage VCE (sat)
    IC = 100mA, IB = 5mA <0.60
    IC = 10mA, IB = 0.5mA Typical 0.70
    Base Emitter Saturation Voltage VBE (sat) V
    IC = 100mA, IB = 5mA Typical 0.90
    IC = 2mA, VCE = 5V 0.55 - 0.70
    Base Emitter On Voltage VBE (on)
    IC = 10mA, VCE = 5V <0.72

    Page <2> 12/05/08 V1.1


    BC547B
    General Purpose Transistor
    Electrical Characteristics (Ta = 25C unless otherwise specified)
    Parameters Symbol Test Condition Value Units

    Dynamic Characteristics

    IC = 10mA, VCE = 5V
    Transition Frequency fT Typical 300 MHz
    f = 100MHz
    Collector Output Capacitance Ccbo VCB = 10V, f = 1MHz <4.50
    pF
    Emitter Input Capacitance Cib VEB = 0.5V, f = 1MHz Typical 9.0
    IC = 0.2mA, VCE = 5V
    Noise Figure NF <10 dB
    Rs = 1k, f = 200Hz

    Small Signal Current Gain hfe Typical 330 -

    Input Impedance hie 3.2 - 8.5 k


    IC = 2mA, VCE = 5V
    Voltage Feedback Ratio hre Typical 2.0 x 10-4

    Output Impedance hoe <60

    Specifications
    VCBO hFE fT
    VCEO IC Ptot
    Maximum Minimum (Typical) Package Part Number
    (V) (A) at IC = 2mA (mW)
    (V) MHz

    45 50 0.1 200 300 625 TO-92 BC547B

    Page <3> 12/05/08 V1.1

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