2N4033

SMALL SIGNAL PNP TRANSISTOR

DESCRIPTION
The 2N4033 is a silicon Planar Epitaxial PNP
transistor in Jedec TO-39 metal case primary
intended for large signal, low noise industrial
applications.

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TO-39

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INTERNAL SCHEMATIC DIAGRAM

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ABSOLUTE MAXIMUM RATINGS
b
O Symbol
V CBO
V CEO
Parameter
Collector-Base Voltage (I E = 0)
Collector-Emitter Voltage (I B = 0)
Value
-80
-80
Unit
V
V
V EBO Emitter-Base Voltage (I C = 0) -5 V
IC Collector Current -1 A
P tot Total Dissipation at T amb 45 o C 0.8 W
o
at T C 45 C 4 W
o
T stg Storage Temperature -55 to 175 C
o
Tj Max. Operating Junction Temperature 175 C

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 2N4033

THERMAL DATA
o
R thj-case Thermal Resistance Junction-Case Max 37.5 C/W
o
R thj-amb Thermal Resistance Junction-Ambient Max 187.5 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cut-off V CE = -60 V -50 nA
Current (I E = 0) V CE = -60 V T C = 150 o C -50 A
V (BR)CBO Collector-Base I C = -10 A -80 V
Breakdown Voltage
(I E = 0)
V (BR)CEO Collector-Emitter I C = -10 mA -80 V
Breakdown Voltage
(I B = 0)
V (BR)EBO Emitter-Base I E = -10 A -5 V
Breakdown Voltage

s)
t(
(I C = 0)
V CE(sat)

uc
Collector-Emitter I C = -150 mA I B = -15 mA -0.15 V
Saturation Voltage I C = -500 mA I B = -50 mA -0.5 V

od
V BE(sat) Base-Emitter I C = -150 mA I B = -15 mA -0.9 V

h FE
Saturation Voltage
DC Current Gain
I C = -500 mA
I C = -100 A
I B = -50 mA
V CE = -5 V
P
75r -1.1 V

I C = -100 mA
I C = -500 mA
V CE = -5 V
V CE = -5 V
te100
70
300

I C = -1 A
I C = -100 mA
V CE = -5 V

o
V CE = -5 V le 25

fT Transition Frequency
T amb = -55 o C
b s
I C = -50 mA V CE = -10 V
40
150 500 MHz
f = 100 MHz
- O
(s)
C EBO Emitter-Base IE = 0 V EB = -0.5 V f = 1MHz 110 pF
Capacitance

ct
C CBO Collector-Base IC = 0 V CB = -10 V f = 1MHz 20 pF

u
Capacitance
t s Storage Time

o d I C = -500 mA V CC = -30 V
I B1 = -IB2 = -50 mA
350 ns

t f
Pr
Fall Time I C = -500 mA V CC = -30 V
I B1 = -IB2 = -50 mA
50 ns

t on

ete
Turn-on Time I C = -500 mA V CC = -30 V 100 ns

o l I B1 = -IB2 = -50 mA
* Pulsed: Pulse duration = 300 s, duty cycle 1 %

s
See Test Circuit

b
O

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 2N4033

Collector Emitter Saturation Voltage. Base Emitter Saturation Voltage.

s)
Transition Frequency. Collector Base Capacitance.
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 2N4033

Test Circuit for ton, ts, tf.

PULSE GENERATOR : TO OSCILLOSCOPE :

tr, tf < 20 ns
PW = 1.0 s
tr 10 ns
ZIN > 100 K
s)
ZIN = 50
DC < 2 %
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 2N4033

TO-39 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 12.7 0.500

B 0.49 0.019

D 6.6 0.260

E 8.5 0.334

F 9.4
s)
0.370

G 5.08 0.200
c t(
d u
ro
H 1.2 0.047

I 0.9
e P 0.035

o
45o (typ.)
let
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( s )
uct
G
o d D A

I Pr
H
ete
o l
s
E
F

O b L
B

P008B

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 2N4033

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OInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2002 STMicroelectronics Printed in Italy All Rights Reserved

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