1.

Describe in your own words the meaning of the word ideal as applied to a device or
system.

2.Describe in your own words the characteristics of the ideal diode and how they
determine the on and off states of the device. That is, describe why the short-circuit
and open-circuit equivalents are appropriate.

3. What is the one important difference between the characteristics of a simple switch
and those of an ideal diode?

Semiconductor Materials

4. In your own words, define semiconductor; resistivity, bulk resistance, and ohmic
contact resistance.

5. (a) Using Table 1.1, determine the resistance of a silicon sample having an area of
1 cm 2 and a length of 3 cm.

(b) Repeat part (a) if the length is 1 cm and the area 4 cm'.

(c) Repeat part (a) if the length is 8 cm and the area 0.5 cm 2.

(d) Repeat part (a) for copper and compare the results.

6. Sketch the atomic structure of copper and discuss why it is a good conductor and how
its structure is different from germanium and silicon. J

7. In your own words, define an intrinsic material, a negative temperature coefficient, and
cova

lent bonding.

8. Consult your reference library and list three materials that have a negative
temperature coefficient and three that have a positive temperature coefficient.

Energy Levels

9. How much energy in joules is required to move a charge of 6 C through a difference

in potential of 3 V?

If 48 eV of energy is required to move a charge through a potential difference of 12 V,

determine the charge involved.

11. Consult your reference library and determine the level of E~ for GaP and ZnS, two
semiconductor materials of practical value. In addition, determine the written name
for each material.32. Using Eq. (1.6), determine the ac resistance at a current of 1 mA and
15 mA for the diode of Fig. 1.34. Compare the solutions and develop a general
 conclusion regarding the ac resistance and increasing levels of diode current.

1.5 Extrinsic Materials-n- and p-Type.

12. Describe the difference between n-type and p-type semiconductor materials.

13. Describe the difference between donor and acceptor impurities.

14. Describe the difference between majority and minority carriers.

15. Sketch the atomic structure of silicon and insert an impurity of arsenic as demonstrated
for silicon in Fig. 1.9.

16. Repeat Problem 15 but insert an impurity of indium.

17. Consult your reference library and find another explanation of hole versus electron flow.
Using both descriptions, describe in your own words the process of hole conduction.

1.6 Semiconductor Diode

18. Describe in your own words the conditions established by forward- and reverse-bias
conditions on a p-n junction diode and how the resulting current is affected.

19. Describe how you will remember the forward- and reverse-bias states of the p-12 junction
diode. That is, how you will remember which potential (positive or negative) is applied to
which terminal?

20. Using Eq. (1.4), determine the diode current at 20C for a silicon diode with 1,. = 50 nA
and an applied forward bias of 0.6 V.

21. Repeat Problem 20 for T = 100C (boiling point of water). Assume that 1, has increased
to 5.0 A.

22. (a) Using Eq. (1.4), determine the diode current at 20C for a silicon diode with 1 5
= 0.1 A at a reverse-bias potential of - 10 V.

(b) Is the result expected? Why?

23. (a) Plot the function y = e ` for x from 0 to 5.

(b) What is the value of y = e-` at x = 0?

(c) Based on the results of part (b), why is the factor - I important in Eq. (1.4)?

24. In the reverse-bias region the saturation current of a silicon diode is about 0.1 AA (T =
20C). Determine its approximate value if the temperature is increased 40C.

25. Compare the characteristics of a silicon and a germanium diode and determine which you
would prefer to use for most practical applications. Give some details. Refer to a
manufacturer's listing and compare the characteristics of a germanium and a silicon diode of
similar maximum ratings.

26. Determine the forward voltage drop across the diode whose characteristics appear in Fig.
 1.24 at temperatures of -75C. 25C, 100C, and 200C and a current of 10 mA. For
each temperature, determine the level of saturation current. Compare the extremes of each
and comment on the ratio of the two.

1.8 Resistance Levels

27. Determine the static or dc resistance of the commercially available diode of Fig. 1.19 at a
forward current of 2 mA.

28. Repeat Problem 26 at a forward current of 15 mA and compare results.

29. Determine the static or dc resistance of the commercially available diode of Fig. 1.19 at a re-
verse voltage of - 10 V. How does it compare to the value determined at a reverse voltage
of -30 V?

30; (a) Determine the dynamic (ac) resistance of the diode of Fig. 1.34 at a forward
current of 10 mA using Eq. (1.6).

(b) Determine the dynamic (ac) resistance of the diode of Fig. 1.34 at a forward current of
10 mA using Eq. (1.7).

(c) Compare solutions of parts (a) and (b).

31. Calculate the dc and ac resistance for the diode of Fig. 1.34 at a forward current of
10 mA and compare their magnitudes.

33. Using Eq. (1.7), determine the ac resistance at a current of I mA and 15 mA for the diode of
Fig. 1.19. Modify the equation as necessary for low levels of diode current. Compare to
the solutions obtained in Problem 32.

34. Determine the average ac resistance for the diode of Fig. 1.19 for the region between 0.6
and 0.9 V.

35. Determine the ac resistance for the diode of Fig. 1.19 at 0.75 V and compare to the
average ac resistance obtained in Problem 34.

36. Find the piecewise-linear equivalent circuit for the diode of Fig. 1.19. Use a straight line
segment that intersects the horizontal axis at 0.7 V and best approximates the curve for
the region greater than 0.7 V.

37. Repeat Problem 36 for the diode of Fig. 1.34.

38. Plot 1F versus Vr using linear scales for the diode of Fig. 1.41. Note that the provided
graph employs a log scale for the vertical axis (log scales are covered in sections 11.2 and
11.3).

39. Comment on the change in capacitance level with increase in reverse-bias potential for the
diode of Fig. 1.41.

40. Does the reverse saturation current of the diode of Fig. 1.41 change significantly in
 magnitude for reverse-bias potentials in the range -25 to - 100 V?

41 For the diode of Fig. 1.41 determine the level of 'R at room temperature (25C) and the boil-
ing point of water (100C). Is the change significant? Does the level just about double for
every 10C increase in temperature?

42. For the diode of Fig. 1.41, determine the maximum ac (dynamic) resistance at a forward
current of 0.1, 1.5, and 20 mA. Compare levels and comment on whether the results
support conclusions derived in earlier sections of this chapter.

43. Using the characteristics of Fig. 1.41, determine the maximum power dissipation levels
for the diode at room temperature (25C) and 100C. Assuming that V,: remains fixed at
0.7 V, how has the maximum level of I, changed between the two temperature levels?

44. Using the characteristics of Fig. 1.41, determine the temperature at which the diode
current will be 50% of its value at room temperature (25C).

45. (a) Referring to Fig. 1.42, determine the transition capacitance at reverse-bias potentials of
-25 and -10 V. What is the ratio of the change in capacitance to the change in voltage?

(b) Repeat part (a) for reverse-bias potentials of - 10 and -1 V. Determine the ratio of
the change in capacitance to the change in voltage.

(c) How do the ratios determined in parts (a) and (b) compare? What does it tell you
about which range may have more areas of practical application?

46. Referring to Fig. 1.42, determine the diffusion capacitance at 0 and 0.25 V.
47. Describe in your own words how diffusion and transition capacitances differ.

48. Determine the reactance offered by a diode described by the characteristics of Fig. 1.42 at
a forward potential of 0.2 V and a reverse potential of -20 V if the applied frequency is 6
MHz.

1.12 Reverse Recovery Time

49. Sketch the waveform for i of the network of Fig. 1.70 if t, = 2t, and the total reverse
recovery time is 9 ns. tj =5ns

Figure 1.70 Problem 49

1.15 Zener Diodes

50. The following characteristics are specified for a particular Zener diode: V z = 29 V,
VR = 16.8 V. 1,, = 10 mA, 1,; = 20 F.tA. and I,. tt = 40 mA. Sketch the characteristic
curve in the manner displayed in Fig. 1.55.
51. 1 At what temperature will the 10-V Zener diode of Fig. 1.55 have a nominal voltage
of 10.75 V? (Hint: Note the data in Table 1.4.)

52. Determine the temperature coefficient of a 5-V Zener diode (rated 2_5C value) if the
nominal voltage drops to 4.8 V at a temperature of 100C.

53. Using the curves of Fig. 1.56a, what level of temperature coefficient would you
expect for a 20-V diode? Repeat for a 5-V diode. Assume a linear scale between
nominal voltage levels and a current level of 0.1 mA.

54. Determine the dynamic impedance for the 24-V diode at 1, = 10 mA for Fig. I.56b.
Note that it is a log scale.

55. Compare the levels of dynamic impedance for the 24-V diode of Fig. 1.56b at current
levels of 0.2, I, and 10 mA. How do the results relate to the shape of the
characteristics in this region?
 1.16 Light-Emitting Diodes

56. Referring to Fig. 1.60e, what would appear to be an appropriate value of VT for this
device? How does it compare to the value of V-, for silicon and germanium?

57. Using the information provided in Fig. 1.60, determine the forward voltage across
the diode if the relative luminous intensity is 1.5.

58. (a) What is the percent increase in relative efficiency of the device of Fig. 1.60 if the
peak current is increased from 5 to 10 mA?

(b) Repeat part (a) for 30 to 35 mA (the same increase in current).

(c) Compare the percent increase from parts (a) and (b). At what point on the curve
would you say there is little gained by further increasing the peak current?

59. (a) Referring to Fig. 1.60h, determine the maximum tolerable peak current if the
period of the pulse duration is I ms, the frequency is 300 Hz, and the maximum
tolerable dc current is 20 mA.

(b) Repeat part (a) for a frequency of 100 Hz.

60. (a) If the luminous intensity at 0 angular displacement is 3.0 mcd for the device of
Fig. 1.60, at what angle will it be 0.75 mcd?

(b) At what angle does the loss of luminous intensity drop below the 50% level?

61. Sketch the current derating curve for the average forward current of the high-efficiency
red LED of Fig. 1.60 as determined by temperature. (Note the absolute maximum
ratings.)

networks of Fig. 2.157.

2.5 Parallel and Series-Parallel Configurations 10.

Determine V and 11, for the
 Figure 2.157 Problems 10, 50

2.5 Parallel and Series-Parallel Configurations 10.

Determine V and 11, for the networks of Fig. 2.157.

(a)

Figure 2.157 Problems 10, 50

 Figure 2.158 Problem 11

12. Determine V, V, and I for the network of Fig. 2.159.

13. Determine V, and ID for the network of Fig. 2.160.

14. Determine V, for the network of Fig. 2.40 with 0 V on both inputs.

15. Determine V, for the network of Fig. 2.40 with 10 V on both inputs.

16. Determine V o for the network of Fig. 2.43 with 0 V on both inputs.

17. Determine V, for the network of Fig. 2.43 with 10 V on both inputs.

18. Determine V, for the negative logic OR gate of Fig. 2.161.

19. Determine V, for the negative logic AND gate of Fig. 2.162.

20. Determine the level of V, for the gate of Fig. 2.163.

21. Determine V, for the configuration of Fig. 2.164. -5 V

0_________ IN 10V 5V
Si 0_________ 0

Figure 2.162 Problem 19 Figure 2.163 Problem 20 Figure 2.164 Problem 21

Figure 2.161 Problem 18

 2.7 Sinusoidal Inputs: Half-Wave Rectification

22. Assuming an ideal diode, sketch Vi, Vd, and id for the half-wave rectifier of Fig. 2.165. The in-
put is a sinusoidal waveform with a frequency of 60 Hz

23. Repeat Problem 22 with a silicon diode (VT = 0.7 V).

24. Repeat Problem 22 with a 6.8-k1Z load applied as shown in Fig. 2.166. Sketch vL and iL.

25. For the network of Fig. 2.167, sketch v and determine VdC.

26. For the network of Fig. 2.168, sketch v, and iR

Figure 2.166 Problem 24

Figure 2.168 Problem 26

27. (a) Given P,,,. = 14 mW for each diode of Fig. 2.169, determine the maximum current rating
of each diode (using the approximate equivalent model). (b) Determine h,. for V;_ = 160 V.

(c) Determine the current through each diode at Vi,,,, using the results of part (b).
(d) If only one diode were present, determine the diode current and compare it to the maximum
rating.

2. Given the information appearing in Fig. 4.87, determine:

 (a) 1c. (b) R t,.

(c) R 8.

(d) Vcr.

3. Given the information appearing in Fig. 4.88, determine:

(a) 1,.. (b) Vc< -.

(c) A

(d) R5.
4. Find the saturation current (I, ,) for the fixed-bias configuration of Fig. 4.86.

5.Given the BJT transistor characteristics of Fig. 4.89:

(a) Draw a load line on the characteristics determined by E = 21 V and R, = 3 kfl for a
fixedbias configuration.

(b) Choose an operating point midway between cutoff and saturation. Determine the value
of R to establish the resulting operating point.

(c) What are the resulting values of /,,,, and V,.,: (,?

(d) What is the value of /3 at the operating point?

(e) What is the value of a defined by the operating point?

(f) What is the saturation current (Icy) for the design?

(g) Sketch the resulting fixed-bias configuration.

(h) What is the dc power dissipated by the device at the operating point?

(i) What is the power supplied by V?

(j) Determine the power dissipated by the resistive elements by taking the difference
between the results of parts (h) and (i).

8. Given the information provided in Fig. 4.92, determine:

(a) f3 (b) Vcc

(c) RB.

9. Determine the saturation current for the network of Fig. 4.90.s

10. Using the characteristics of Fig. 4.89, determine the following for an emitter-bias
configuration if a Q-point is defined at 1, 4 mA and V cEe = 10 V. (a) Rc if Vcc = 24 V
and R, = 1.2 kfl.
 (b) /3 at the operating point.

(c) RB.

(d) Power dissipated by the transistor.

(e) Power dissipated by the resistor R c.

11. (a) Determine I. and VVE for the network of Fig. 4.86.

(b) Change /3 to 135 and determine the new value of Ic and VcE for the network of
Fig. 4.86. (c) Determine the magnitude of the percent change in I c and V cs using the
following equa

9. Given the characteristics of Fig. 5.51:

(a) Sketch the transfer characteristics directly from the drain characteristics.

(b) Using Fig. 5.51 to establish the values of ID55 and V P, sketch the transfer characteristics
using Shockley's equation.

(c) Compare the characteristics of parts (a) and (b). Are there any major differences?

0. (a) Given Inns = 12 mA and V p = -4 V, sketch the transfer characteristics for the JFET tran-
sistor.

(b) Sketch the drain characteristics for the device of part (a).

11. Given ID55 = 9 mA and V. = -3.5 V, determine 1, when:

(a) VGS = 0 V. (b) VG5 = - 2 V.

VG5
(c) = -3.5 V. (d) VGS = -5V.

12. Given IDS, = 16 mA and V, = -5 V, sketch the transfer characteristics using the data points of
Table 5.1. Determine the value of I, at VGS = -3 V from the curve, and compare it to the value
determined using Shockley's equation. Repeat the above for VGS = -1 V.

13. A p-channel JFET has device parameters of IDSS = 7.5 mA and V, = 4 V. Sketch the transfer
characteristics.

14. Given IDSS = 6 mA and V, = -4.5 V:

(a) Determine ID at VG5 = -2 and -3.6 V. (b) Determine V,ti at ID = 3 and 5.5 mA.

tions:

Given the information provided in Fig. 4.92, determine:

(a) f3 (b) Vcc

 (c) RB.

(d) Power dissipated by the transistor.

(e) Power dissipated by the resistor R c.

rating than the standard construction technique.

(b) Why do VMOS FETs have reduced channel resistance levels?

(c) Why is a positive temperature coefficient desirable?

5.11 CMOS

42. (a) Describe in your own words the operation of the network of Fig. 5.46 with V1 = 0
V.

(b) If the "on" MOSFET of Fig. 5.46 (with V; = 0 V) has a drain current of 4 mA
with VDs = 0.1 V, what is the approximate resistance level of the device? If 11, = 0.5
A for the off' transistor, what is the approximate resistance of the device? Do the
resulting resistance levels suggest that the desired output voltage level will result'?

43. Research CMOS logic at your local or college library, and describe the range of
applications and basic advantages of the approach.

1. (a) Draw the basic construction of a p-channel JFET.

(b) Apply the proper biasing between drain and source and sketch the depletion region
for Vcs = O V.

3. (a) Determine VDS for VGs = 0 V and ID = 6 mA using the characteristics of Fig. 5.10.

(b) Using the results of part (a), calculate the resistance of the JFET for the region ID = 0
to

6mAforVGS=0V.

(c) Determine VDS for VGS = -1 V and ID = 3 mA.

(d) Using the results of part (c), calculate the resistance of the JFET for the region ID = 0
to

3mAforVGS=-1V.

(e) Determine VDS for VGs = -2 V and ID = 1.5 mA.

(f) Using the results of part (e), calculate the resistance of the JFET for the region ID = 0 to

1.5 mA for VGs = -2 V.

 (g) Defining the result of part (b) as r, determine the resistance for VGs = -1 V using Eq.
(5.1) and compare with the results of part (d).

(h) Repeat part (g) for VGs = -2 V using the same equation, and compare the results with part
(f). (i) Based on the results of parts (g) and (h), does Eq. (5.1) appear to be a valid
approximation?

4. Using the characteristics of Fig. 5.10:

(a) Determine the difference in drain current (for VDS > V P) between VGs = 0 V and VGs
=

-1 V.

(b) Repeat part (a) between VGS = -1 and -2 V.

(c) Repeat part (a) between VGS = -2 and -3 V. (d)

Repeat part (a) between VGS = -3 and -4 V.

(e) Is there a marked change in the difference in current levels as V Cs becomes

increasingly

negative?

(f) Is the relationship between the change in VGS and the resulting change in ID linear or non

linear? Explain.

5. What are the major differences between the collector characteristics of a BJT transistor and
the drain characteristics of a JFET transistor? Compare the units of each axis and the
controlling variable. How does Ic react to increasing levels of 18 versus changes in ID to
increasingly negative values of VGS? How does the spacing between steps of IQ compare to
the spacing between steps of VGs? Compare V,,,, to VP in defining the nonlinear region at low
levels of output voltage.

6. (a) Describe in your own words why I G is effectively zero amperes for a JFET transistor.

(b) Why is the input impedance to a JFET so high?

(c) Why is the terminology field effect appropriate for this important three-terminal
device?

7. Given IDS.4 = 12 mA and CVO = 6 V, sketch a probable distribution of characteristic

curves for the JFET (similar to Fig. 5.10).

8. In general, comment on the polarity of the various voltages and direction of the currents for
an n-channel JFET versus a p-channel JFET.

2. Using the characteristics of Fig. 5.10, determine

Vns > VP).

(a) V(-,s =0 V.
(b) Vcs = -1 V. (c) Vcs = -1.5 V. (d) V G, = -1.8 V.

(e) Vcs = -4 V. (f) Vs = -6 V.

ID

for the following levels of

VGS

(with