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    Features: Mechanical Data

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    marioz25
    This document provides specifications for a 2N2905A PNP switching transistor. It includes mechanical dimensions, maximum ratings, thermal characteristics, and electrical characteristics such as current gain, transition frequency, capacitances, and switching times. The 2N2905A is a silicon planar epitaxial PNP transistor suitable for high speed saturated switching applications.

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    Features: Mechanical Data

    Uploaded by

    marioz25
    15 views2 pages
    This document provides specifications for a 2N2905A PNP switching transistor. It includes mechanical dimensions, maximum ratings, thermal characteristics, and electrical characteristics such as current gain, transition frequency, capacitances, and switching times. The 2N2905A is a silicon planar epitaxial PNP transistor suitable for high speed saturated switching applications.

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    Data Sheet

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    Data Sheet

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    This document provides specifications for a 2N2905A PNP switching transistor. It includes mechanical dimensions, maximum ratings, thermal characteristics, and electrical characteristics such as current gain, transition frequency, capacitances, and switching times. The 2N2905A is a silicon planar epitaxial PNP transistor suitable for high speed saturated switching applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    15 views2 pages

    Features: Mechanical Data

    Uploaded by

    marioz25
    This document provides specifications for a 2N2905A PNP switching transistor. It includes mechanical dimensions, maximum ratings, thermal characteristics, and electrical characteristics such as current gain, transition frequency, capacitances, and switching times. The 2N2905A is a silicon planar epitaxial PNP transistor suitable for high speed saturated switching applications.

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    of 2

    SEME 2N2905A

    LAB
    MECHANICAL DATA
    Dimensions in mm (inches)
    8.89 (0.35)
    9.40 (0.37)
    HIGH SPEED
    7.75 (0.305)
    8.51 (0.335) MEDIUM POWER
    PNP SWITCHING TRANSISTOR
    4.19 (0.165)
    4.95 (0.195)

    0.89 max.
    12.70
    (0.500)
    (0.035) FEATURES
    min. 7.75 (0.305)
    8.51 (0.335)
    dia. SILICON PLANAR EPITAXIAL PNP
    TRANSISTOR
    5.08 (0.200)
    HIGH SPEED SATURATED SWITCHING
    typ.
    ALSO AVAILABLE IN CERAMIC SURFACE
    MOUNT PACKAGE
    2.54
    2 (0.100)
    1 3 CECC SCREENING OPTIONS
    0.66 (0.026)
    1.14 (0.045) SPACE QUALITY LEVELS OPTIONS
    0.71 (0.028)
    0.86 (0.034)

    45

    TO39 METAL PACKAGE


    Underside View
    PIN 1 Emitter PIN 2 Base PIN 3 Collector

    ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated)


    VCBO Collector - Base Voltage 60V
    VCEO Collector - Emitter Voltage 60V
    VEBO Emitter - Base Voltage 5V
    IC Collector Current Continuous 600mA
    PD Total Device Dissipation @ TA = 25C 600mW
    Derate above 25C 3.43mW / C
    PD Total Device Dissipation @ TC = 25C 3W
    Derate above 25C 17.2mW / C
    TJ , TSTG Operating and Storage Junction Temperature Range 65 to +200C

    THERMAL CHARACTERISTICS
    RqJA Thermal Resistance, Junction to Ambient 292C/W
    RqJC Thermal Resistance, Junction to Case 58C/w

    Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 6/99
    E-mail: [email protected] Website: http://www.semelab.co.uk
    SEME 2N2905A

    LAB
    ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated)
    Parameter Test Conditions Min. Typ. Max. Unit
    OFF CHARACTERISTICS
    V(BR)CEO 1
    Collector Emitter Breakdown Voltage IC = 10mA IB = 0 60 V
    V(BR)CBO Collector Base Breakdown Voltage IC = 10mA IE = 0 60 V
    V(BR)EBO Emitter Base Breakdown Voltage IE = 10mA IC = 0 5 V
    ICEX Collector Cut-off Current VCE = 30V VBE = 0.5V 50 nA
    IE = 0 VCB = 50V 0.01
    ICBO Collector Cut-off Current m A
    TA = 150C 10
    IB Base Current VCE = 30V VBE = 0.5V 50 nA
    ON CHARACTERISTICS
    IC = 150mA IB = 15mA 0.4
    VCE(sat)1 Collector Emitter Saturation Voltage V
    IC = 500mA IB = 50mA 1.6
    IC = 150mA IB = 15mA 1.3
    VBE(sat) Base Emitter Saturation Voltage V
    IC = 500mA IC = 50mA 2.6
    IC = 0.1mA VCE = 10V 75
    IC = 1mA VCE = 10V 100
    hFE DC Current Gain IC = 10mA VCE = 10V 100
    IC = 150mA VCE = 10V 1 100 300
    IC = 500mA VCE = 10V 1
    50
    SMALL SIGNAL CHARACTERISTICS
    IC = 50mA VCE = 20V
    fT Transition Frequency 2 200 MHz
    f = 100MHz
    VCB = 10V IE = 0
    Cob Output Capacitance 8 pF
    f = 1.0MHz
    VBE = 2V IC = 0
    Cib Input Capacitance 30 pF
    f = 1.0MHz
    SWITCHING CHARACTERISTICS
    ton TurnOn Time VCC = 30V 26 45
    td Delay Time IC = 150mA 6 10 ns
    tr Rise Time IB1 = 15mA 20 40
    toff TurnOff Time VCC = 6V 70 100
    ts Storage Time IC = 150mA 50 80 ns
    tf Fall Time IB1 = IB2 = 15mA 20 30

    NOTES:
    1) Pulse test: tp 300ms , d 2%
    2) fT is defined as the frequency at which hFE extrapolates to unity.

    Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 6/99
    E-mail: [email protected] Website: http://www.semelab.co.uk

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