CA3086

General Purpose NPN

May 2001 Transistor Array

Applications Description
Three Isolated Transistors and One Differentially The CA3086 consists of five general-purpose silicon NPN
Connected Transistor Pair For Low-Power Applications transistors on a common monolithic substrate. Two of the
from DC to 120MHz transistors are internally connected to form a differentially
connected pair.
General-Purpose Use in Signal Processing Systems
Operating in the DC to 190MHz Range The transistors of the CA3086 are well suited to a wide vari-
ety of applications in low-power systems at frequencies from
Temperature Compensated Amplifiers
DC to 120MHz. They may be used as discrete transistors in
See Application Note, AN5296 Application of the conventional circuits. However, they also provide the very
CA3018 Integrated-Circuit Transistor Array for significant inherent advantages unique to integrated circuits,
Suggested Applications such as compactness, ease of physical handling and ther-
mal matching
Ordering Information
PART NUMBER TEMP. PKG.
(BRAND) RANGE ( oC) PACKAGE NO.
CA3086 -55 to 125 14 Ld PDIP E14.3
CA3086M -55 to 125 14 Ld SOIC M14.15
(3086)
CA3086M96 -55 to 125 14 Ld SOIC Tape M14.15
(3086) and Reel

Pinout
CA3086
(PDIP, SOIC)
TOP VIEW

1 14
Q5
2 13 SUBSTRATE
Q1

3 12
Q2
4 11
Q4
5 10

6 9
Q3
7 8

1-888-INTERSIL or 321-724-7143
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
| Intersil and Design is a trademark of Intersil Americas Inc. | Copyright Intersil Americas Inc. 2001
File Number 483.4
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 CA3086

Absolute Maximum Ratings Thermal Information

The following ratings apply for each transistor in the device: Thermal Resistance (Typical, Note 2) JA ( oC/W) JC (oC/W)
Collector-to-Emitter Voltage, V CEO. . . . . . . . . . . . . . . . . . . . . 15V PDIP Package . . . . . . . . . . . . . . . . . . . 180 N/A
Collector-to-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . 20V SOIC Package. . . . . . . . . . . . . . . . . . . 220 N/A
Collector-to-Substrate Voltage, VCIO (Note 1) . . . . . . . . . . . . 20V Maximum Power Dissipation (Any one transistor) . . . . . . . . 300mW
Emitter-to-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . 5V Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
Operating Conditions (SOIC - Lead Tips Only)

Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:
1. The collector of each transistor in the CA3086 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be
connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor
action. To avoid undesirable coupling between transistors, the substrate (Terminal 13) should be maintained at either DC or signal (AC)
ground. A suitable bypass capacitor can be used to establish a signal ground.
2. JA is measured with the component mounted on an evaluation PC board in free air.

Electrical Specifications TA = 25oC, For Equipment Design

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector-to-Base Breakdown Voltage V(BR)CBO lC = 10A, IE = 0 20 60 - V

Collector-to-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 15 24 - V

Collector-to-Substrate Breakdown Voltage V(BR)ClO IC = 10A, ICI = 0 20 60 - V

Emitter-to-Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 5 7 - V

Collector-Cutoff Current (Figure 1) ICBO VCB = 10V, IE = 0, - 0.002 100 nA

Collector-Cutoff Current (Figure 2) ICEO VCE = 10V, IB = 0, - (Figure 2) 5 A

DC Forward-Current Transfer Ratio (Figure 3) hFE VCE = 3V, IC = 1mA 40 100 -

Electrical Specifications TA = 25oC, Typical Values Intended Only for Design Guidance

TYPICAL
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

DC Forward-Current Transfer Ratio hFE VCE = 3V IC = 10mA 100

(Figure 3)
IC = 10A 54

Base-to-Emitter Voltage (Figure 4) VBE VCE = 3V IE = 1 mA 0.715 V

IE = 10mA 0.800 V

VBE Temperature Coefficient (Figure 5) VBE/T VCE = 3V, lC = 1 mA -1.9 mV/oC

Collector-to-Emitter VCE SAT IB = 1mA, IC = 10mA 0.23 V

Saturation Voltage

Noise Figure (Low Frequency) NF f = 1kHz, VCE = 3V, IC = 100A, 3.25 dB

RS = 1k

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 CA3086

Electrical Specifications TA = 25oC, Typical Values Intended Only for Design Guidance (Continued)

TYPICAL
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Low-Frequency, Small-Signal Equivalent- f = 1kHz,VCE = 3V, IC = 1mA

Circuit Characteristics:
Forward Current-Transfer Ratio hFE 100 -
(Figure 6)

Short-Circuit Input Impedance hIE 3.5 k

(Figure 6)

Open-Circuit Output Impedance hOE 15.6 S

(Figure 6)

Open-Circuit Reverse-Voltage hRE 1.8 X 10-4 -

Transfer Ratio (Figure 6)

Admittance Characteristics: f = 1MHz,VCE = 3V, lC = 1mA

Forward Transfer Admittance yFE 31 - j1.5 mS

(Figure 7)

Input Admittance (Figure 8) yIE 0.3 + j0.04 mS

Output Admittance (Figure 9) yOE 0.001 + j0.03 mS

Reverse Transfer Admittance yRE See Figure 10 -

(Figure 10)

Gain-Bandwidth Product (Figure 11) fT VCE = 3V, IC = 3mA 550 MHz

Emitter-to-Base Capacitance CEBO VEB = 3V, IE = 0 0.6 pF

Collector-to-Base Capacitance CCBO VCB = 3V, IC = 0 0.58 pF

Collector-to-Substrate Capacitance CClO VC l = 3V, IC = 0 2.8 pF

Typical Performance Curves

102 103
IB = 0
IE = 0
COLLECTOR CUTOFF CURRENT (nA)
COLLECTOR CUTOFF CURRENT (nA)

10 102
VCB = 15V VCE = 10V
VCB = 10V
10
1 VCB = 5V
VCE = 5V
10-1 1

10-2 10-1

10-3 10-2

10-4 10-3
0 25 50 75 100 125 0 25 50 75 100 125
TEMPERATURE (oC) TEMPERATURE (oC)

FIGURE 1. ICBO vs TEMPERATURE FIGURE 2. ICEO vs TEMPERATURE

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 CA3086

Typical Performance Curves (Continued)

120 0.8
VCE = 3V VCE = 3V
TA = 25 oC TA = 25oC

BASE-TO-EMITTER VOLTAGE (V)

110 hFE
STATIC FORWARD CURRENT
TRANSFER RATIO (hFE)

0.7
100 VBE

90
0.6
80

70
0.5

60

50 0.4
0.01 0.1 1 10 0.01 0.1 1.0 10
EMITTER CURRENT (mA) EMITTER CURRENT (mA)

FIGURE 3. hFE vs IE FIGURE 4. V BE vs IE

100
VCB = 3V VCE = 3V
f = 1kHz
TA = 25oC hFE = 100 hOE
NORMALIZED h PARAMETERS

hIE = 3.5k AT
hRE = 1.88 x 10-4
BASE-TO-EMITTER VOLTAGE (V)

0.9 hIE 1mA

hOE = 15.6S
10
hRE
0.8

0.7

I E = 3mA hFE
1.0
0.6
IE = 1mA
IE = 0.5mA
0.5 hRE
hIE
0.4 0.1
-75 -50 -25 0 25 50 75 100 125 0.01 0.1 1.0 10
TEMPERATURE (oC) COLLECTOR CURRENT (mA)

FIGURE 5. VBE vs TEMPERATURE FIGURE 6. NORMALIZED hFE, hIE, hRE, hOE vs IC

FORWARD TRANSFER CONDUCTANCE (gFE)

COMMON EMITTER CIRCUIT, BASE INPUT 6

COMMON EMITTER CIRCUIT, BASE INPUT
TA = 25oC, VCE = 3V, I C = 1mA
40 TA = 25 oC, VCE = 3V, IC = 1mA
AND SUSCEPTANCE (bFE) (mS)

AND SUSCEPTANCE (bIE) (mS)

5
INPUT CONDUCTANCE (gIE)

30
4
gFE
20
3
bIE
10

2
0
gIE
-10 bFE 1

-20 0
0.1 1 10 100 0.1 1 10 100
FREQUENCY (MHz) FREQUENCY (MHz)

FIGURE 7. yFE vs FREQUENCY FIGURE 8. yIE vs FREQUENCY

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 CA3086

Typical Performance Curves (Continued)

REVERSE TRANSFER CONDUCTANCE (gRE)

6 COMMON EMITTER CIRCUIT, BASE INPUT COMMON EMITTER CIRCUIT, BASE INPUT
TA = 25oC, VCE = 3V, IC = 1mA TA = 25oC, VCE = 3V, IC = 1mA
AND SUSCEPTANCE (bOE) (mS)

AND SUSCEPTANCE (bRE) (mS)

OUTPUT CONDUCTANCE (gOE)

5 gRE IS SMALL AT FREQUENCIES

LESS THAN 500MHz
0
4
bOE
bRE
-0.5
3

-1.0
2

1 -1.5
gOE

0 -2.0
0.1 1 10 100 1 10 100
FREQUENCY (MHz) FREQUENCY (MHz)

FIGURE 9. yOE vs FREQUENCY FIGURE 10. yRE vs FREQUENCY

VCE = 3V
TA = 25 oC
1000
GAIN BANDWIDTH PRODUCT (MHz)

900
800
700
600
500
400
300
200
100
0
0 1 2 3 4 5 6 7 8 9 10
COLLECTOR CURRENT (mA)

FIGURE 11. fT vs IC

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