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    High-Current Gain Power Transistor (60V, 3A) : Transistors

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    surianto
    1) The 2SD2318 is a high-current gain power transistor that can handle currents up to 3A and voltages up to 60V. 2) It has low saturation voltage (typically 0.5V) and high DC current gain (hFE of 560 to 1800). 3) The 2SD2318 complements another transistor, the 2SB1639, for related applications.

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    High-Current Gain Power Transistor (60V, 3A) : Transistors

    Uploaded by

    surianto
    50 views1 page
    1) The 2SD2318 is a high-current gain power transistor that can handle currents up to 3A and voltages up to 60V. 2) It has low saturation voltage (typically 0.5V) and high DC current gain (hFE of 560 to 1800). 3) The 2SD2318 complements another transistor, the 2SB1639, for related applications.

    Original Description:

    Manual

    Original Title

    D2318-Rohm

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    1) The 2SD2318 is a high-current gain power transistor that can handle currents up to 3A and voltages up to 60V. 2) It has low saturation voltage (typically 0.5V) and high DC current gain (hFE of 560 to 1800). 3) The 2SD2318 complements another transistor, the 2SB1639, for related applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    50 views1 page

    High-Current Gain Power Transistor (60V, 3A) : Transistors

    Uploaded by

    surianto
    1) The 2SD2318 is a high-current gain power transistor that can handle currents up to 3A and voltages up to 60V. 2) It has low saturation voltage (typically 0.5V) and high DC current gain (hFE of 560 to 1800). 3) The 2SD2318 complements another transistor, the 2SB1639, for related applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    2SD2318

    Transistors

    High-current gain Power Transistor


    (60V, 3A)
    2SD2318

    !Features !External dimensions (Units : mm)


    1) High DC current gain.
    2) Low saturation voltage.

    0.75
    5.5 1.5
    (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A)

    0.9
    (3) (2) (1)

    2.3
    3) Complements the 2SB1639.

    5.1
    6.5
    0.9

    0.65
    2.3
    C0.5

    0.8Min. (1) Base(Gate)

    0.5
    1.0

    2.3
    1.5

    0.5
    2.5 (2) Collector(Drain)
    !Absolute maximum ratings (Ta=25C) ROHM : CPT3 9.5 (3) Emitter(Source)
    EIAJ : SC-63
    Parameter Symbol Limits Unit
    Collector-base voltage VCBO 80 V
    Collector-emitter voltage VCEO 60 V
    Emitter-base voltage VEBO 6 V
    3 A
    Collector current IC
    4.5 A(Pulse) *
    1 W
    Collector power dissipation PC
    15 W(Tc=25C)
    Junction temperature Tj 150 C
    Storage temperature Tstg -55~+150 C

    * Single pulse Pw=100ms

    !Packaging specifications and hFE


    Type 2SD2318
    Package CPT3
    hFE UV
    Code TL
    Basic ordering unit (pieces) 2500

    !Electrical characteristics (Ta=25C)


    Parameter Symbol Min. Typ. Max. Unit Conditions
    Collector-base breakdown voltage BVCBO 80 - - V IC=50A
    Collector-emitter breakdown voltage BVCEO 60 - - V IC=1mA
    Emitter-base breakdown voltage BVEBO 6 - - V IE=50A
    Collector cutoff current ICBO - - 100 A VCB=80V
    Emitter cutoff current IEBO - - 100 A VEB=6V
    Collector-emitter saturation voltage VCE(sat) - - 1.0 V IC/IB=2A/0.05A
    *
    Base-emitter saturation voltage VBE(sat) - - 1.5 V IC/IB=2A/0.05A *
    DC current transfer ratio hFE 560 - 1800 - VCE/IC=4V/0.5A
    Transition frequency fT - 50 - MHz VCE=5V, IE=-0.2A, f=10MHz
    Output capacitance Cob - 60 - pF VCB=10V, IE=0A, f=1MHz
    *
    * Measured using pulse current.

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