74HC14D
74HC14D
74HC14D
DATA SHEET
74HC14; 74HCT14
Hex inverting Schmitt trigger
Product specification 2003 Oct 30
Supersedes data of 1997 Aug 26
Philips Semiconductors Product specification
FEATURES DESCRIPTION
Applications: The 74HC14 and 74HCT14 are high-speed Si-gate CMOS
Wave and pulse shapers devices and are pin compatible with low power Schottky
TTL (LSTTL). They are specified in compliance with
Astable multivibrators
JEDEC standard no. 7A.
Monostable multivibrators.
The 74HC14 and 74HCT14 provide six inverting buffers
Complies with JEDEC standard no. 7A with Schmitt-trigger action. They are capable of
ESD protection: transforming slowly changing input signals into sharply
HBM EIA/JESD22-A114-A exceeds 2000 V defined, jitter-free output signals.
MM EIA/JESD22-A115-A exceeds 200 V.
Specified from 40 to +85 C and 40 to +125 C.
TYPICAL
SYMBOL PARAMETER CONDITIONS UNIT
HC HCT
tPHL/tPLH propagation delay nA to nY CL = 15 pF; VCC = 5 V 12 17 ns
CI input capacitance 3.5 3.5 pF
CPD power dissipation capacitance per gate notes 1 and 2 7 8 pF
Notes
1. CPD is used to determine the dynamic power dissipation (PD in W):
PD = CPD VCC2 fi N + (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
(CL VCC2 fo) = sum of the outputs.
2. For type 74HC14 the condition is VI = GND to VCC.
For type 74HCT14 the condition is VI = GND to VCC 1.5 V.
2003 Oct 30 2
Philips Semiconductors Product specification
FUNCTION TABLE
INPUT OUTPUT
nA nY
L H
H L
Note
1. H = HIGH voltage level;
L = LOW voltage level.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
TEMPERATURE RANGE PINS PACKAGE MATERIAL CODE
74HC14D 40 to +125 C 14 SO14 plastic SOT108-1
74HCT14D 40 to +125 C 14 SO14 plastic SOT108-1
74HC14DB 40 to +125 C 14 SSOP14 plastic SOT337-1
74HCT14DB 40 to +125 C 14 SSOP14 plastic SOT337-1
74HC14N 40 to +125 C 14 DIP14 plastic SOT27-1
74HCT14N 40 to +125 C 14 DIP14 plastic SOT27-1
74HC14PW 40 to +125 C 14 TSSOP14 plastic SOT402-1
74HCT14PW 40 to +125 C 14 TSSOP14 plastic SOT402-1
74HC14BQ 40 to +125 C 14 DHVQFN14 plastic SOT762-1
74HCT14BQ 40 to +125 C 14 DHVQFN14 plastic SOT762-1
PINNING
2003 Oct 30 3
Philips Semiconductors Product specification
1Y 2 13 6A 1Y 2 13 6A
2A 3 12 6Y
2A 3 12 6Y
2Y 4 14 11 5A
2Y 4 GND(1) 11 5A
3A 5 10 5Y
3Y 6 9 4A 3A 5 10 5Y
GND 7 8 4Y 3Y 6 9 4A
MNA839
7 8
GND 4Y
Top view MBL760
(1) The die substrate is attached to this pad using conductive die
attach material. It can not be used as a supply pin or input.
handbook, halfpage 1 2
handbook, halfpage 1A 1Y
1 2
3 4
2A 2Y
3 4
3A 3Y 5 6
5 6
4A 4Y
9 8 9 8
5A 5Y
11 10
11 10
6A 6Y
13 12
13 12
MNA840
MNA841
2003 Oct 30 4
Philips Semiconductors Product specification
handbook, halfpage
1A 1Y
1 2
2A 2Y
3 4
3A 3Y
5 6
handbook, halfpage
A Y
4A 4Y
9 8
MNA843
5A 5Y
11 10
6A 6Y
13 12
MNA842
2003 Oct 30 5
Philips Semiconductors Product specification
74HC14 74HCT14
SYMBOL PARAMETER CONDITIONS UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
VI input voltage 0 VCC 0 VCC V
VO output voltage 0 VCC 0 VCC V
Tamb operating ambient see DC and AC 40 +25 +85 40 +25 +85 C
temperature characteristics 40 +125 40 +125 C
per device
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC supply voltage 0.5 +7 V
IIK input diode current VI < 0.5 V or VI > VCC + 0.5 V 20 mA
IOK output diode current VO < 0.5 V or VO > VCC + 0.5 V 20 mA
IO output source or sink 0.5 V < VO < VCC + 0.5 V 25 mA
current
ICC; IGND VCC or GND current 50 mA
Tstg storage temperature 65 +150 C
Ptot power dissipation Tamb = 40 to +125 C
DIP14 packages; note 1 750 mW
Other packages; note 2 500 mW
Notes
1. For DIP14 packages: above 70 C the value of PD derates linearly with 12 mW/K.
2. For SO14 packages: above 70 C the value of PD derates linearly with 8 mW/K.
For (T)SSOP14 packages: above 60 C the value of PD derates linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60 C the value of PD derates linearly with 4.5 mW/K.
2003 Oct 30 6
Philips Semiconductors Product specification
DC CHARACTERISTICS
Type 74HC14
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL PARAMETER MIN. TYP.(1) MAX. UNIT
OTHER VCC (V)
Tamb = 25 C
VOH HIGH-level output VI = VIH or VIL
voltage IO = 20 A 2.0 1.9 2.0 V
IO = 20 A 4.5 4.4 4.5 V
IO = 20 A 6.0 5.9 6.0 V
IO = 4.0 mA 4.5 3.98 4.32 V
IO = 5.2 mA 6.0 5.48 5.81 V
VOL LOW-level output VI = VIH or VIL
voltage IO = 20 A 2.0 0 0.1 V
IO = 20 A 4.5 0 0.1 V
IO = 20 A 6.0 0 0.1 V
IO = 4.0 mA 4.5 0.15 0.26 V
IO = 5.2 mA 6.0 0.16 0.26 V
ILI input leakage VI = VCC or GND 6.0 0.1 A
current
ICC quiescent supply VI = VCC or GND; IO = 0 6.0 2.0 A
current
Tamb = 40 to +85 C
VOH HIGH-level output VI = VIH or VIL
voltage IO = 20 A 2.0 1.9 V
IO = 20 A 4.5 4.4 V
IO = 20 A 6.0 5.9 V
IO = 4.0 mA 4.5 3.84 V
IO = 5.2 mA 6.0 5.34 V
VOL LOW-level output VI = VIH or VIL
voltage IO = 20 A 2.0 0.1 V
IO = 20 A 4.5 0.1 V
IO = 20 A 6.0 0.1 V
IO = 4.0 mA 4.5 0.33 V
IO = 5.2 mA 6.0 0.33 V
ILI input leakage VI = VCC or GND 6.0 1.0 A
current
ICC quiescent supply VI = VCC or GND; IO = 0 6.0 20 A
current
2003 Oct 30 7
Philips Semiconductors Product specification
TEST CONDITIONS
SYMBOL PARAMETER MIN. TYP.(1) MAX. UNIT
OTHER VCC (V)
Tamb = 40 to +125 C
VOH HIGH-level output VI = VIH or VIL
voltage IO = 20 A 2.0 1.9 V
IO = 20 A 4.5 4.4 V
IO = 20 A 6.0 5.9 V
IO = 4.0 mA 4.5 3.7 V
IO = 5.2 mA 6.0 5.2 V
VOL LOW-level output VI = VIH or VIL
voltage IO = 20 A 2.0 0.1 V
IO = 20 A 4.5 0.1 V
IO = 20 A 6.0 0.1 V
IO = 4.0 mA 4.5 0.4 V
IO = 5.2 mA 6.0 0.4 V
ILI input leakage VI = VCC or GND 6.0 1.0 A
current
ICC quiescent supply VI = VCC or GND; IO = 0 6.0 40 A
current
Note
1. All typical values are measured at Tamb = 25 C.
2003 Oct 30 8
Philips Semiconductors Product specification
Type 74HCT14
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL PARAMETER MIN. TYP.(1) MAX. UNIT
OTHER VCC (V)
Tamb = 25 C
VOH HIGH-level output VI = VIH or VIL
voltage IO = 20 A 4.5 4.4 4.5 V
IO = 4.0 mA 4.5 3.98 4.32 V
VOL LOW-level output VI = VIH or VIL
voltage IO = 20 A 4.5 0 0.1 V
IO = 4.0 mA 4.5 0.15 0.26 V
ILI input leakage current VI = VCC or GND 5.5 0.1 A
ICC quiescent supply VI = VCC or GND; 5.5 2.0 A
current IO = 0
ICC additional supply VI = VCC 2.1 V; IO = 0 4.5 to 5.5 30 108 A
current per input
Tamb = 40 to +85 C
VOH HIGH-level output VI = VIH or VIL
voltage IO = 20 A 4.5 4.4 V
IO = 4.0 mA 4.5 3.84 V
VOL LOW-level output VI = VIH or VIL
voltage IO = 20 A 4.5 0.1 V
IO = 4.0 mA 4.5 0.33 V
ILI input leakage current VI = VCC or GND 5.5 1.0 A
ICC quiescent supply VI = VCC or GND; 5.5 20 A
current IO = 0
ICC additional supply VI = VCC 2.1 V; IO = 0 4.5 to 5.5 135 A
current per input
Tamb = 40 to +125 C
VOH HIGH-level output VI = VIH or VIL
voltage IO = 20 A 4.5 4.4 V
IO = 4.0 mA 4.5 3.7 V
VOL LOW-level output VI = VIH or VIL
voltage IO = 20 A 4.5 0.1 V
IO = 4.0 mA 4.5 0.4 V
ILI input leakage current VI = VCC or GND 5.5 1.0 A
ICC quiescent supply VI = VCC or GND; 5.5 40 A
current IO = 0
ICC additional supply VI = VCC 2.1 V; IO = 0 4.5 to 5.5 147 A
current per input
Note
1. All typical values are measured at Tamb = 25 C.
2003 Oct 30 9
Philips Semiconductors Product specification
TRANSFER CHARACTERISTICS
Type 74HC
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
WAVEFORMS VCC (V)
Tamb = 25 C; note 1
VT+ positive-going threshold Figs 7 and 8 2.0 0.7 1.18 1.5 V
4.5 1.7 2.38 3.15 V
6.0 2.1 3.14 4.2 V
VT negative-going threshold Figs 7 and 8 2.0 0.3 0.52 0.90 V
4.5 0.9 1.40 2.00 V
6.0 1.2 1.89 2.60 V
VH hysteresis (VT+ VT) Figs 7 and 8 2.0 0.2 0.66 1.0 V
4.5 0.4 0.98 1.4 V
6.0 0.6 1.25 1.6 V
Tamb = 40 to +85 C
VT+ positive-going threshold Figs 7 and 8 2.0 0.7 1.5 V
4.5 1.7 3.15 V
6.0 2.1 4.2 V
VT negative-going threshold Figs 7 and 8 2.0 0.3 0.90 V
4.5 0.90 2.00 V
6.0 1.20 2.60 V
VH hysteresis (VT+ VT) Figs 7 and 8 2.0 0.2 1.0 V
4.5 0.4 1.4 V
6.0 0.6 1.6 V
Tamb = 40 to +125 C
VT+ positive-going threshold Figs 7 and 8 2.0 0.7 1.5 V
4.5 1.7 3.15 V
6.0 2.1 4.2 V
VT negative-going threshold Figs 7 and 8 2.0 0.30 0.90 V
4.5 0.90 2.00 V
6.0 1.2 2.60 V
VH hysteresis (VT+ VT) Figs 7 and 8 2.0 0.2 1.0 V
4.5 0.4 1.4 V
6.0 0.6 1.6 V
Note
1. All typical values are measured at Tamb = 25 C.
2003 Oct 30 10
Philips Semiconductors Product specification
Family 74HCT
At recommended operating conditions: voltages are referenced to GND (ground = 0 V)
TEST CONDITIONS
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
WAVEFORMS VCC (V)
Tamb = 25 C; note 1
VT+ positive-going threshold Figs 7 and 8 4.5 1.2 1.41 1.9 V
5.5 1.4 1.59 2.1 V
VT negative-going threshold Figs 7 and 8 4.5 0.5 0.85 1.2 V
5.5 0.6 0.99 1.4 V
VH hysteresis (VT+ VT) Figs 7 and 8 4.5 0.4 0.56 V
5.5 0.4 0.60 V
Tamb = 40 to +85 C
VT+ positive-going threshold Figs 7 and 8 4.5 1.2 1.9 V
5.5 1.4 2.1 V
VT negative-going threshold Figs 7 and 8 4.5 0.5 1.2 V
5.5 0.6 1.4 V
VH hysteresis (VT+ VT) Figs 7 and 8 4.5 0.4 V
5.5 0.4 V
Tamb = 40 to +125 C
VT+ positive-going threshold Figs 7 and 8 4.5 1.2 1.9 V
5.5 1.4 2.1 V
VT negative-going threshold Figs 7 and 8 4.5 0.5 1.2 V
5.5 0.6 1.4 V
VH hysteresis (VT+ VT) Figs 7 and 8 4.5 0.4 V
5.5 0.4 V
Note
1. All typical values are measured at Tamb = 25 C.
2003 Oct 30 11
Philips Semiconductors Product specification
AC CHARACTERISTICS
Type 74HC
GND = 0 V; tf = tf = 6 ns; CL = 50 pF
TEST CONDITIONS
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
WAVEFORMS VCC (V)
Tamb = 25 C; note 1
tPHL/tPLH propagation delay nA to nY see Fig.9 2.0 41 125 ns
4.5 15 25 ns
6.0 12 21 ns
tTHL/tTLH output transition time see Fig.9 2.0 19 75 ns
4.5 7 15 ns
6.0 6 13 ns
Tamb = 40 to +85 C
tPHL/tPLH propagation delay nA to nY see Fig.9 2.0 155 ns
4.5 31 ns
6.0 26 ns
tTHL/tTLH output transition time see Fig.9 2.0 95 ns
4.5 19 ns
6.0 15 ns
Tamb = 40 to +125 C
tPHL/tPLH propagation delay nA to nY see Fig.9 2.0 190 ns
4.5 38 ns
6.0 32 ns
tTHL/tTLH output transition time see Fig.9 2.0 110 ns
4.5 22 ns
6.0 19 ns
Note
1. All typical values are measured at Tamb = 25 C.
2003 Oct 30 12
Philips Semiconductors Product specification
Type 74HCT
GND = 0 V; tr = tf = 6 ns; CL = 50 pF
TEST CONDITIONS
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
WAVEFORMS VCC (V)
Tamb = 25 C; note 1
tPHL/tPLH propagation delay nA to nY see Fig.9 4.5 20 34 ns
tTHL/tTLH output transition time see Fig.9 4.5 7 15 ns
Tamb = 40 to +85 C
tPHL/tPLH propagation delay nA to nY see Fig.9 4.5 43 ns
tTHL/tTLH output transition time see Fig.9 4.5 19 ns
Tamb = 40 to +125 C
tPHL/tPLH propagation delay nA to nY see Fig.9 4.5 51 ns
tTHL/tTLH output transition time see Fig.9 4.5 22 ns
Note
1. All typical values are measured at Tamb = 25 C.
VO
handbook, halfpage VT+
VI VH
VT
VO
VH VI
MNA845
VT VT+
MNA844
2003 Oct 30 13
Philips Semiconductors Product specification
MNA846 MNA847
50 1.0
handbook, halfpage handbook, halfpage
ICC ICC
(A) (mA)
40 0.8
30 0.6
20 0.4
10 0.2
0 0
0 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 5
VI (V) VI (V)
Fig.9 Typical 74HC14 transfer characteristics. Fig.10 Typical 74HC14 transfer characteristics.
MNA848 MNA849
1.0 1.5
handbook, halfpage handbook, halfpage
ICC ICC
(mA) (mA)
0.8 1.2
0.6 0.9
0.4 0.6
0.2 0.3
0 0
0 1.2 2.4 3.6 4.8 6.0 0 1 2 3 4 5
VI (V) VI (V)
Fig.11 Typical 74HC14 transfer characteristics. Fig.12 Typical 74HCT14 transfer characteristics.
2003 Oct 30 14
Philips Semiconductors Product specification
MNA850
1.8
handbook,
I halfpage
CC
(mA)
1.5
1.2
0.9
0.6
0.3
0
0 1 2 3 4 5 6
VI (V)
VCC = 5.5 V.
AC WAVEFORMS
VI
handbook, halfpage
nA input VM VM
GND
t PHL t PLH
VOH
90%
nY output VM VM
10%
VOL
Fig.14 The input (nA) to output (nY) propagation delays and output transitions times.
2003 Oct 30 15
Philips Semiconductors Product specification
TEST S1
tPLH/tPHL open Definitions for test circuit:
RL = Load resistor.
tPLZ/tPZL VCC
CL = load capacitance including jig and probe capacitance.
tPHZ/tPZH GND RT = termination resistance should be equal to the output impedance Zo of the pulse generator.
2003 Oct 30 16
Philips Semiconductors Product specification
APPLICATION INFORMATION
The slow input rise and fall times cause additional power MNA852
400
dissipation. This can be calculated using the following handbook, halfpage
formula: ICC(AV)
(A)
Pad = fi (tr ICC(AV) + tf ICC(AV)) VCC.
300
Where:
Pad = additional power dissipation (W);
fi = input frequency (MHz); 200 positive - going
edge
tr = input rise time (s); 10% to 90%;
tf = input fall time (s); 10% to 90%;
ICC(AV) = average additional supply current (A). 100
MNA853
400
handbook, halfpage
ICC(AV)
(A)
200
C
negative - going MNA854
100 egde
edge
0
0 2 4 VCC (V) 6
1 1
74HC14 : f = --- -------------------
T 0.8 RC
1 1
Linear change of VI between 0.1VCC to 0.9VCC. 74HCT14 : f = --- ----------------------
T 0.67 RC
2003 Oct 30 17
Philips Semiconductors Product specification
PACKAGE OUTLINES
SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1
D E A
X
y HE v M A
14 8
Q
A2
(A 3) A
A1
pin 1 index
Lp
1 7 L
e w M detail X
bp
0 2.5 5 mm
scale
0.25 1.45 0.49 0.25 8.75 4.0 6.2 1.0 0.7 0.7
mm 1.75 0.25 1.27 1.05 0.25 0.25 0.1 o
0.10 1.25 0.36 0.19 8.55 3.8 5.8 0.4 0.6 0.3 8
0.010 0.057 0.019 0.0100 0.35 0.16 0.244 0.039 0.028 0.028 0o
inches 0.069 0.01 0.05 0.041 0.01 0.01 0.004
0.004 0.049 0.014 0.0075 0.34 0.15 0.228 0.016 0.024 0.012
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
99-12-27
SOT108-1 076E06 MS-012
03-02-19
2003 Oct 30 18
Philips Semiconductors Product specification
D ME
seating plane
A2 A
L A1
c
Z e w M
b1
(e 1)
b
14 8 MH
pin 1 index
E
1 7
0 5 10 mm
scale
UNIT
A A1 A2
b b1 c D (1) E (1) e e1 L ME MH w Z (1)
max. min. max. max.
1.73 0.53 0.36 19.50 6.48 3.60 8.25 10.0
mm 4.2 0.51 3.2 2.54 7.62 0.254 2.2
1.13 0.38 0.23 18.55 6.20 3.05 7.80 8.3
0.068 0.021 0.014 0.77 0.26 0.14 0.32 0.39
inches 0.17 0.02 0.13 0.1 0.3 0.01 0.087
0.044 0.015 0.009 0.73 0.24 0.12 0.31 0.33
Note
1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
99-12-27
SOT27-1 050G04 MO-001 SC-501-14
03-02-13
2003 Oct 30 19
Philips Semiconductors Product specification
TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1
D E A
X
y HE v M A
14 8
Q
A2 (A 3)
A
A1
pin 1 index
Lp
L
1 7
detail X
w M
e bp
0 2.5 5 mm
scale
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
99-12-27
SOT402-1 MO-153
03-02-18
2003 Oct 30 20
Philips Semiconductors Product specification
DHVQFN14: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads;
14 terminals; body 2.5 x 3 x 0.85 mm SOT762-1
D B A
A
A1
E c
terminal 1 detail X
index area
terminal 1 e1 C
index area
e b v M C A B y1 C y
w M C
2 6
1 7
Eh e
14 8
13 9
Dh
X
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
A(1)
UNIT
max. A1 b c D (1) Dh E (1) Eh e e1 L v w y y1
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
2003 Oct 30 21
Philips Semiconductors Product specification
DEFINITIONS DISCLAIMERS
Short-form specification The data in a short-form Life support applications These products are not
specification is extracted from a full data sheet with the designed for use in life support appliances, devices, or
same type number and title. For detailed information see systems where malfunction of these products can
the relevant data sheet or data handbook. reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
Limiting values definition Limiting values given are in
for use in such applications do so at their own risk and
accordance with the Absolute Maximum Rating System
agree to fully indemnify Philips Semiconductors for any
(IEC 60134). Stress above one or more of the limiting
damages resulting from such application.
values may cause permanent damage to the device.
These are stress ratings only and operation of the device Right to make changes Philips Semiconductors
at these or at any other conditions above those given in the reserves the right to make changes in the products -
Characteristics sections of the specification is not implied. including circuits, standard cells, and/or software -
Exposure to limiting values for extended periods may described or contained herein in order to improve design
affect device reliability. and/or performance. When the product is in full production
(status Production), relevant changes will be
Application information Applications that are
communicated via a Customer Product/Process Change
described herein for any of these products are for
Notification (CPCN). Philips Semiconductors assumes no
illustrative purposes only. Philips Semiconductors make
responsibility or liability for the use of any of these
no representation or warranty that such applications will be
products, conveys no licence or title under any patent,
suitable for the specified use without further testing or
copyright, or mask work right to these products, and
modification.
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 Oct 30 22