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Field Effect Transistors

The document discusses two types of field effect transistors: JFETs and MOSFETs. It focuses on describing the construction, working principle, and output characteristics of JFETs. Specifically: - A JFET consists of an N-type or P-type silicon bar containing two PN junctions on the sides. Current flows through a channel between the junctions, which can be widened or narrowed by the gate voltage. - Increasing the reverse gate voltage widens the depletion regions and narrows the channel, decreasing current flow. Decreasing it narrows the depletion regions, widening the channel and increasing current. - The output characteristics curve shows drain current levels off at the "pin

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94 views3 pages

Field Effect Transistors

The document discusses two types of field effect transistors: JFETs and MOSFETs. It focuses on describing the construction, working principle, and output characteristics of JFETs. Specifically: - A JFET consists of an N-type or P-type silicon bar containing two PN junctions on the sides. Current flows through a channel between the junctions, which can be widened or narrowed by the gate voltage. - Increasing the reverse gate voltage widens the depletion regions and narrows the channel, decreasing current flow. Decreasing it narrows the depletion regions, widening the channel and increasing current. - The output characteristics curve shows drain current levels off at the "pin

Uploaded by

sumit
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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TYPES OF FIELD EFFECT TRANSISTORS

Junction field effect transistor JFET


Metal Oxide semiconductor field effect transistor ( MOSFET )
Junction field effect transistor JFET

Is a three terminal semi conductor device in which current conduction is by one


type of carrier i.e electrons or holes. The output characteristics are controlled by input
voltage and not by input current.

CONSTRUCTION

A JFET consists of p type or N type silicon bar containing two PN junction at the
sides. the bar forms the conducting channel for the charge carriers.. If the bar is of n type
it is called n channel JFET. And if the bar is Ptype it is called p channel JFET. the two pn
junctions forming diodes are connected internally and common terminal called gate. is
taken out. other terminal are source and drain taken out from the bar.
WORKING PRINICIPLE

When a voltage Vds is applied between drain and source terminals and the voltage
on the gate is zero. the two pn junction at the side of the bar establish depletion layers.
The electrons will flow from source to drain through a channel between the depletion
layers. the size of these layers determined the width of the channel and hence the current
conduction through the bar.

When a reverse voltage VGS is applied between the Gate and source, width of the
depletion layer is increased this reduces width of conducting channel , their by increasing
the resistance of n type bar .the current from source to drain is decreased. if the reverse
voltage on the gate is decreased width of the depletion layer also decreases. this increases
the width of the conducting channel and hence source to drain current

OUTPUT CHARACTERISTICS OF JFET

The curve between drain current (Id) and drain source voltage (Vds)of a JFET at
constant gate source voltage (VGS) is known as output characteristics of JFET .keeping
Vgs fixed at some value 1 V the drain source voltage in steps. Corresponding to each
value of Vds the drain current Id is noted. A plot of these values gives the output
characteristics of JFET at Vgs = 1V repeating similar procedure output charaecteristics at
other gate source voltages .

At first the drain current Id rises rapidly with drain surce voltage Vds but then becomes
constant. The drain source voltage above which drain current becomes constant is known
as pinch of f voltage.OA is the pinch off voltage.
Shorted gate drain current (Idss)

It is the drain current with source short circuited to gate Vgs =0 and drain voltage
Vds equal to pinch pff voltage.it is called zero bias current.

The drain current raise rapidly at first and then levels off at pinch off voltageVp.
The drain current has now reached the maximum value Idss when Vds is incresed beyond
Vp the depletion layers expand at the top of the channel.the channel now acts as current
limiter and holds drain current constant at Idss
Pinch off voltage Vp

It is the minimum drain source voltage at which the drain current essentially
becomes constant

Gate source cut off voltage Vgs (off)

It is the gata source voltage where the channel is completely cut off and the drain
current becomes zero.

Expression for Drain Curent

The relation between Idss and Vp .We note that gate source cut off voltage VGS
off on the transfer characteristics is equal to pinch off voltage vp on the drain
characteristics

Vp = VGS (off)
JFET has VGS = -4 V Vp =4
ID= Idss (1-VGS/VGS(off))2
Id =drain current at given Vgs
Idss = shorted -gate drain voltage
Vgs = gate source voltage
Vgs (off) = gate source cut off voltage

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