428L2 PDF
428L2 PDF
428L2 PDF
Package
RON
Vbb(on)
IL(NOM)
IL(SCr)
Ta
PG-TO252-5-11
60m
4.75...41V
7.0A
17A
-30 +85C
General Description
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions
Applications
C compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads in
industrial applications
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
Block Diagram
Protection Functions
Diagnostic Function
Infineon Technologies AG
Page 1 of 13
Vbb
IN
ST
Logic
with
protection
functions
PROFET
OUT
Load
GND
2006-Mar-16
PROFET ITS428L2
Functional diagram
overvoltage
protection
internal
voltage supply
logic
gate
control
+
charge
pump
current limit
VBB
clamp for
inductive load
OUT
temperature
sensor
IN
ESD
LOAD
Open load
detection
ST
GND
PROFET
Pin configuration
Symbol
Function
GND
Logic ground
IN
Vbb
ST
(top view)
Tab = VBB
GND IN
OUT
Tab
Vbb
Infineon Technologies AG
Page 2
(3)
ST OUT
2006-Mar-16
PROFET ITS428L2
Maximum Ratings at Tj = 25 C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
Tj Start=-40 ...+150C
Load
dump protection1) VLoadDump = VA + Vs, VA = 13.5 V
2)
RI = 2 , RL= 4.0 , td= 200 ms, IN= low or high
Load current (Current limit, see page 5)
Junction temperature
Operating temperature range
Storage temperature range
Power dissipation (DC), TC 25 C
Maximal switchable inductance, single pulse
Vbb = 12V, Tj,start = 150C, TC = 150C const.
4
(See diagram on page 9)
IL(ISO) = 7 A, RL = 0 ; E )AS=0.19J:
Symbol
Vbb
Vbb
3)
VLoad dump
IL
Tj
Ta
Tstg
Ptot
ZL
VESD
Values
43
24
Unit
V
V
60
self-limited
150
-30 ...+85
-40 ...+105
75
A
C
5.6
1.0
4.0
8.0
mH
kV
V
mA
Values
typ
max
-- 1.67
-75
42
--
Unit
VIN
IIN
IST
Thermal Characteristics
Parameter and Conditions
Thermal resistance
1)
2)
3)
4)
5)
Symbol
min
----
K/W
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150
resistor for the GND connection is recommended).
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
EAS is the maximum inductive switch-off energy
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air.
Infineon Technologies AG
Page 3
2006-Mar-16
PROFET ITS428L2
Electrical Characteristics
Parameter and Conditions
Symbol
Values
min
typ
max
Unit
Tj=25 C: RON
Tj=150 C:
--
50
100
60
120
5.8
7.0
--
--
--
mA
30
30
100
100
200
200
dV /dton
0.1
--
V/s
-dV/dtoff
0.1
--
V/s
4.75
41
43
-52
9
25
10
41
43
----
---47
5
-1
--
0.8
1.5
IL(ISO)
IL(GNDhigh)
Turn-on time
IN
Turn-off time
IN
RL = 12 ,
Slew rate on
10 to 30% VOUT, RL = 12 ,
Slew rate off
70 to 40% VOUT, RL = 12 ,
Operating Parameters
Operating voltage
Tj =-40 Vbb(on)
Tj =+25...+150C:
Overvoltage protection7)
Tj =-40C: Vbb(AZ)
Ibb=40 mA
Tj =25...+150C:
Standby current (pin 3) 8)
Tj=-40...+25C: Ibb(off)
VIN=0; see diagram on page 10
Tj= 150C:
IL(off)
Off-State output current (included in Ibb(off))
VIN=0
Operating current 9), VIN=5 V
IGND
6)
7)
9)
V
A
A
mA
Infineon Technologies AG
Page 4
2006-Mar-16
PROFET ITS428L2
Parameter and Conditions
Symbol
Protection Functions10)
Current limit (pin 3 to 5)
Values
min
typ
max
Unit
IL(lim)
Tj =-40C:
Tj =25C:
Tj =+150C:
Repetitive short circuit shutdown current limit
IL(SCr)
Tj = Tjt (see timing diagrams, page 12)
Thermal shutdown time11
Tj,start = 25C: toff(SC)
(see timing diagrams on page 12)
21
17
12
28
22
16
36
31
24
---
17
7.5
---
A
ms
41
43
150
---
47
-10
--
52
--32
V
C
K
V
--
600
--
mV
10
--
500
mA
VON(CL)
Tjt
Tjt
-Vbb
-VON(rev)
IL (OL)
(on-condition)
10)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
11)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air.
12)
Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 8).
13)
not subject to production test, specified by design
Infineon Technologies AG
Page 5
2006-Mar-16
PROFET ITS428L2
Parameter and Conditions
Symbol
Values
min
typ
max
RI
2.5
3.5
VIN(T+)
VIN(T-)
VIN(T)
IIN(off)
IIN(on)
td(ST OL4)
1.7
1.5
-1
20
100
--0.5
-50
520
3.2
--50
90
900
V
V
V
A
A
s
5.4
--
6.1
--
-0.4
14)
Unit
If a ground resistor RGND is used, add the voltage drop across this resistor.
Infineon Technologies AG
Page 6
2006-Mar-16
PROFET ITS428L2
Truth Table
Normal
operation
Open load
Overtemperature
L = "Low" Level
H = "High" Level
Input
Output
Status
level
L
H
L
H
L
H
level
L
H
Z
H
L
L
BTS 428L2
H
H
H
L
H
L
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 12)
Infineon Technologies AG
Page 7
2006-Mar-16
PROFET ITS428L2
Terms
+ Vbb
Ibb
3
I IN
2
IN
IL
IN
V ST
OUT
PROFET
I ST
V
R ST
IN
VON
Z2
Logic
R ST ST
GND
1
RI
ST
bb
Vbb
OUT
V
IGND
V OUT
PROFET
Z1
GND
GND
R GND
Signal GND
Load GND
ESD-ZD I
R Load
GND
+ V bb
Status output
VON
ON
+5V
OUT
R ST(ON)
GND
Open load
detection
Logic
unit
ST
ESDZD
ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 375
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
DC conditions is not recommended.
GND disconnect
3
+ V bb
V
IN
Vbb
PROFET
4
VON
bb
IN
ST
OUT
ST
GND
1
V
GND
OUT
GND
PROFET
Infineon Technologies AG
Page 8
2006-Mar-16
PROFET ITS428L2
Inductive Load switch-off energy
dissipation
E bb
IN
Vbb
E AS
PROFET
4
OUT
IN
ST
GND
PROFET
1
V
V
bb
=
V
IN ST
ELoad
Vbb
OUT
ST
GND
GND
ZL
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
IN
Vbb
PROFET
ER
EL = 1/2LI L
OUT
ST
IL L
ILRL
)
EAS= 2R (Vbb + |VOUT(CL)|) ln (1+ |V
L
OUT(CL)|
GND
1
RL
EL
3
high
bb
100
10
0.1
2
12
17
IL [A]
Infineon Technologies AG
Page 9
2006-Mar-16
PROFET ITS428L2
Typ. on-state resistance
RON = f (Vbb,Tj ); IL = 2 A, IN = high
RON [m]
175
150
125
Tj=150C
100
75
25C
50
-40C
25
0
3
30
40
Vbb [V]
50
Infineon Technologies AG
100
150
200
Tj [C]
Page 10
2006-Mar-16
PROFET ITS428L2
Timing diagrams
Figure 2b: Switching a lamp,
IN
V bb
ST
V
OUT
ST open drain
I
t
OUT
t
proper turn on under all conditions
The initial peak current should be limited by the lamp and not by the
current limit of the device.
IN
IN
VOUT
ST
90%
t on
dV/dtoff
V
OUT
dV/dton
10%
off
IL
I L(OL)
t
t
*) if the time constant of load is too large, open-load-status may
occur
Infineon Technologies AG
Page 11
2006-Mar-16
PROFET ITS428L2
Figure 3a: Short circuit
shut down by overtemperature, reset by cooling
IN
IN
t
d(ST OL)
ST
ST
d(ST OL)
L(lim)
I
VOUT
L(SCr)
off(SC)
normal
L
open
normal
t
Heating up of the chip may require several milliseconds, depending
on external conditions
t
td(ST OL) = 10 s typ.
IN
IN
ST
d(STOL4)
ST
I
V
OUT
t
T
Infineon Technologies AG
Page 12
2006-Mar-16
PROFET ITS428L2
Package and Ordering Code
All dimensions in mm
ITS428L2
Ordering code
SP000221220
6.5
+0.15
-0.05
1)
Information
0.5 +0.08
-0.04
0.1 B
0.25 M A B
0.51 MIN.
5 x 0.6 0.1
1.14
4.56
0.5 +0.08
-0.04
0.9 +0.20
-0.01
0...0.15
0.8 0.15
(4.24) 1 0.1
9.98 0.5
6.22 -0.2
0.15 MAX.
per side
(5)
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
2.3 +0.05
-0.10
5.7 MAX.
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 Mnchen
Infineon Technologies AG 2006
All Rights Reserved.
Infineon Technologies AG
Page 13
2006-Mar-16