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IGBT Reverse Conduction Characteristics Hard-Switching and Soft-Switching

This document discusses IGBT reverse conduction characteristics and the advantages of soft switching over hard switching. It notes that IGBTs have an undefined blocking capability in reverse direction, requiring an anti-parallel diode. Soft switching minimizes losses by transferring current before the IGBT turns on, while hard switching results in higher turn-on losses due to the reverse recovery current of the diode. The document provides examples of soft and hard switching circuits and waveforms.

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80 views7 pages

IGBT Reverse Conduction Characteristics Hard-Switching and Soft-Switching

This document discusses IGBT reverse conduction characteristics and the advantages of soft switching over hard switching. It notes that IGBTs have an undefined blocking capability in reverse direction, requiring an anti-parallel diode. Soft switching minimizes losses by transferring current before the IGBT turns on, while hard switching results in higher turn-on losses due to the reverse recovery current of the diode. The document provides examples of soft and hard switching circuits and waveforms.

Uploaded by

moabdoly
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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IGBT reverse conduction characteristics

Hard-switching and soft-switching


Energy Saving Products BU
July 2013

COMPANY CONFIDENTIAL

18

The IGBT in reverse


The IGBT is a four-layer structure (P-N-P-N).
It has a well-defined blocking capability in one direction
and a weak and undefined blocking capability in the
reverse direction.
The MOSFET is a three-layer structure (N-P-N) with
good reverse conduction capabilities.
For more details follow the link below to appnote AN-983,
Section 1, AN-983

IGBTs in topologies with reverse conducting


requirements (bridge) need an anti-parallel diode,
normally co-packaged with the IGBT.
Single-ended topologies (boost PFC) do not require
an anti-parallel diode.
A series blocking diode must be added to IGBTs (and FETs) if the
topology requires reverse blocking capability (current-fed
converters).
COMPANY CONFIDENTIAL

19

Advantages and disadvantages compared to a MOSFET


The diode co-packaged with the IGBT is targeted to the
application.
The MOSFET integral rectifier has a low voltage drop but reverse recovery
characteristics are inadequate for high frequency applications.

IR co-packages three different types of diodes


targeted to the application:
- Very low voltage drop for resonant and ZVS
converters to minimize diode conduction losses
- Very soft recovery for motor drives to minimize EMI
- Very low stored charge for high frequency
applications to minimize recovery and turn-on
losses

COMPANY CONFIDENTIAL

20

Soft-switching v. Hard-switching
Soft-switching
The diode co-packaged with the IGBT conducts before the IGBT turns
on, on account of the resonant nature of the load.
When the IGBT turns on, it has only a diode drop between emitter and
collector.
The turn-on losses are virtually zero. See example in next page.
This allows operation at higher frequency.
Application examples: induction heating and some power converters.

Hard-switching
When the IGBT turns on load current is flowing in the antiparallel
diode of a complementary IGBT.
At turn-on the IGBT picks up the load current plus the reverse
recovery current of the diode. See waveform later.
Because of the reverse recovery of the diode turn-on losses are
normally higher than turn-off losses.
Most power converters and motor drives operate in this mode.
COMPANY CONFIDENTIAL

21

Soft-switching example
Series Resonant Half-bridge converter (SRHB)
The pink trace is the voltage at the midpoint. The blue trace is the current in a
switch.
Diode has no reverse recovery losses because load current transfers from the diode
to the antiparallel IGBT with a very low di/dt <10A/s (ZVS). During the diode
reverse recovery load current flows in the IGBT and in the diode (as reverse
recovery current). TRR is normally <1s in these operating conditions
Diode VFR is the important parameter. A large diode VFR increases losses

COMPANY CONFIDENTIAL

22

Hard-switching example
Reverse recovery current

Load current

IGBT turn-on energy

When the D.U.T turns on, load current transfers:


- to IGBT
- from freewheeling diode
Higher reverse recovery charge means higher IGBT
turn-on losses
Diode has its own recovery losses, as well. They can be
higher or lower than the IGBT turn-on losses, depending
on diode and manufacturer.
COMPANY CONFIDENTIAL

23

Soft recovery v. hard recovery


Di/dt during the second half of the reverse recovery measures softness
A diode with high di/dt is called snappy. Frequently this di/dt is the highest di/dt in
the circuit. It induces noise in the logic and generates EMI.
Increasing gate drive impedance at turn-on
has a small beneficial effect. It normally
increases turn-on losses.
Very few manufacturers provide data on
softness

Di/dt during second half


of the reverse recovery

COMPANY CONFIDENTIAL

24

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