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    DLTS Comb Alessandro Solution

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    Shivshankar Ghuge
    The DLTS data was obtained from a Schottky diode on p-type silicon. Two defects were observed from the Arrhenius plot. The first defect has an energy level of 0.538 eV above the valence band with a capture cross section of 7.13x10^-15 cm^2 and a concentration of 2.02x10^12 cm^-3. The second defect has an energy level of 0.36 eV above the valence band with a capture cross section of 2.34x10^-14 cm^2 and a concentration of 8.52x10^11 cm^-3.

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    DLTS Comb Alessandro Solution

    Uploaded by

    Shivshankar Ghuge
    99 views4 pages
    The DLTS data was obtained from a Schottky diode on p-type silicon. Two defects were observed from the Arrhenius plot. The first defect has an energy level of 0.538 eV above the valence band with a capture cross section of 7.13x10^-15 cm^2 and a concentration of 2.02x10^12 cm^-3. The second defect has an energy level of 0.36 eV above the valence band with a capture cross section of 2.34x10^-14 cm^2 and a concentration of 8.52x10^11 cm^-3.

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    spectroscopy

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    The DLTS data was obtained from a Schottky diode on p-type silicon. Two defects were observed from the Arrhenius plot. The first defect has an energy level of 0.538 eV above the valence band with a capture cross section of 7.13x10^-15 cm^2 and a concentration of 2.02x10^12 cm^-3. The second defect has an energy level of 0.36 eV above the valence band with a capture cross section of 2.34x10^-14 cm^2 and a concentration of 8.52x10^11 cm^-3.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    99 views4 pages

    DLTS Comb Alessandro Solution

    Uploaded by

    Shivshankar Ghuge
    The DLTS data was obtained from a Schottky diode on p-type silicon. Two defects were observed from the Arrhenius plot. The first defect has an energy level of 0.538 eV above the valence band with a capture cross section of 7.13x10^-15 cm^2 and a concentration of 2.02x10^12 cm^-3. The second defect has an energy level of 0.36 eV above the valence band with a capture cross section of 2.34x10^-14 cm^2 and a concentration of 8.52x10^11 cm^-3.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    Exercise #10 - DLTS

    November 20, 2016

    Exercise
    The deep-level transient spectroscopy data in Fig. P5.9 were obtained by the boxcar method on
    a Schottky barrier diode on a p-type Si substrate. The diode area is 0.02 cm2 and the diode bias
    voltage was varied from zero to reverse bias voltage of 5V during the measurement. Ksi = 11.7,
    p = 1.78 1021 cm2 s1 K 2 , NA = 1015 cm3 , Vbi = 0.87V . Determine ET Ev , Nt , and the intercept p
    for each of the impurities.

    Figure 1: P5.9

    Solution
    Estimation of Et1 Ev , p1 , Et2 Ev and p2 for each DLTS peak (max. 3 points)
    The emission time constant is calculated as
    p,max =

    t2 t1
    ln( tt21 )

    (1)

    e,max is the emission time constant of each DLTS peak, which also defines the temperature at
    which the capacitance transient is maximized. With the DLTS data and rate windows shown in
    1

    figure 1, the emission time constants can be estimated through Eq.1 and the values are listed in
    the table below together with the corresponding temperature.
    t1 -t2
    0.5 ms - 1 ms
    1 ms - 2 ms
    2 ms - 4 ms
    4 ms - 8 ms

    p,max
    7.21 104
    1.44 103
    2.89 103
    5.77 103

    T - 1st peak
    202 K
    195 K
    190 K
    185 K

    s
    s
    s
    s

    T - 2nd peak
    305 K
    295 K
    287 K
    279 K

    The dependence of ep as a function of the temperature is defined by the following equation


    Et Ev

    p,max

    e kT
    =
    p p T 2

    (2)

    The defect parameters Ev Et and p can be determined thorough a linear fit of the quantity ep T 2
    plotted in logarithmic scale as a function of T1 . Specifically, Eq.2 can be rearranged as follows
    
    
    1
    Et Ev
    2
    ln(p,max T ) = ln
    +
    (3)
    p p
    kT
    and the defect parameters are determined by the slope and the y-intercept of the line that fits to
    the values if ep T 2 calculated from the values listed in the table above. Figure 2 shows the linear
    fit together with the values of the slope and y-intercept associated to each DLTS peak.

    Figure 2: Arrhenius plot of the emission time constants as a function of the temperature
    The extracted defect parameters are listed in the table below
    Peak 1
    Peak 2

    Et Ev
    0.54 eV
    0.36 eV

    p
    7.14 1015 cm2
    2.34 1015 cm2

    Estimation of the trap density Nt1 and Nt2


    The capacitance variation between times t1 and t2 is defined by the following equation
    
    
    t
    t
    Nt
    1
    2
    Cmax =
    C0 e h,max e h,max
    2Na

    (4)

    such that the defect density is calculated as


    Nt =

    2Na Cmax
    
    
    t
    t
    2
    1
    C0 e h,max e h,max

    (5)

    where C0 is the capacitance of the Schottky junction under reverse bias (V = 5 V ) calculated as
    s
    qKSi 0 Na
    = 7.52 1011 F
    (6)
    C0 = A
    2(Vbi V )
    From the given DLTS curves we find that Cmax1 = 1.88 1014 F for the first peak and Cmax2 =
    8 1015 F for the second. The insertion of these values into Eq.5 yields the following result:
    Peak 1
    Peak 2

    Nt
    2 1012 cm3
    8.52 1011 cm3

    Value
    8,61E05
    1,78E+21

    Parameters
    K
    p

    Unit
    eV/T
    cm2/(s*K)

    t1

    t2

    Emissionrate

    Ksi

    11,7

    7,21E04

    5,00E04

    1,00E03

    7,21E04

    8,85E14

    F/cm

    295

    1,44E03

    1,00E03

    2,00E03

    1,44E03

    Si

    1,04E12

    F/cm

    285
    280

    2,88E03
    5,77E03

    2,00E03 4,00E03
    4,00E03 8,00E03

    2,89E03
    5,77E03

    A
    q
    NA

    0,02
    1,60E19
    1,00E+15

    cm
    C
    cm3

    C0
    r
    CMAX1

    7,51E11
    2
    1,90E14

    CMAX2

    8,00E15

    Defect1
    Tpeak

    Emissionrate

    305

    Tpeak
    202
    195

    Defect2
    Emissionrate
    7,21E04
    1,44E03

    190
    185

    2,88E03
    5,77E03

    Defect1
    FitDefect1
    1/T
    m
    q
    0,0032787 4,205752133
    0,0033898 4,832226473 6257,685 16,35666
    0,0035088 5,456401301
    0,0035714 6,114149327

    Defect2

    FitDefect2
    m
    q
    3,381663974
    4,004274877 4217,30
    17,55

    y=6257,7x 16,357

    ln(emT2)

    1/T
    0,0049505
    0,0051282
    0,0052632
    0,0054054

    y=4217,3x 17,545

    4,645471085
    5,285281771
    4

    Defect1Parameters
    EvEt
    0,53878665
    eV
    cm2
    p
    7,13E15
    cm3
    Nt1
    2,02E+12

    3
    0,002

    0,0025

    0,003

    0,0035

    0,004

    1/T[1/K]

    Defect2Parameters
    EvEt
    0,36
    eV
    cm2
    p
    2,34E14
    cm3
    Nt2
    8,52E+11

    0,0045

    0,005

    0,0055

    0,006

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