En An Ce / Co Nti Nu Ed: Silicon PNP Epitaxial Planar Type Darlington

Power Transistors
2SB1493
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD2255
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Unit: mm
15.00.5
4.00.1
4.00.1
20.00.3
19.00.3
2.00.1
15.00.2
3.20.1
3.5
Optimum for 60W HiFi output

High foward current transfer ratio hFE: 5000 to 30000
Low collector to emitter saturation voltage VCE(sat): < 2.5V
16.20.5
10.50.5
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12.5
Features
4.50.2
13.00.5
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Peak collector current
ICP
Collector current
IC
Collector power TC=25C

Junction temperature
Tj
Storage temperature
Tstg
140
12
70
150
55 to +150
Conditions
100
100
ue
100
on
e/
nc
Internal Connection
VCE = 140V, IB = 0
hFE1
te
na
1:Base
2:Collector
3:Emitter
EIAJ:SC65(a)
TOP3 Package(a)
VCB = 160V, IE = 0
VCEO
hFE2*
Collector to emitter saturation voltage
VCE(sat)
Base to emitter saturation voltage
VBE(sat)
Transition frequency
fT
Turn-on time
ton
Storage time
tstg
Fall time
tf
M
ain
ICEO
IEBO
Forward current transfer ratio
Unit
ICBO
Collector to emitter voltage
0.60.2
max
Di
sc
Emitter cutoff current
5.450.3
10.90.5
tin
Symbol
Collector cutoff current
1.40.3
(TC=25C)
Parameter
FE2
2.5
Electrical Characteristics
*h
Unit
160
2.00.2
1.10.1
PC
Ta=25C
Ratings
min
typ
VEB = 5V, IC = 0
IC = 30mA, IB = 0
140
VCE = 5V, IC = 1A
2000
VCE = 5V, IC = 6A
5000
30000
IC = 6A, IB = 6mA
2.5
IC = 6A, IB = 6mA
3.0
VCE = 10V, IC = 0.5A, f = 1MHz
Pl
dissipation
(TC=25C)
Solder Dip
Absolute Maximum Ratings
IC = 6A, IB1 = 6mA, IB2 = 6mA,

VCC = 50V
20
MHz
1.0
1.5
1.2
Rank classification
Rank
hFE2
5000 to 15000 8000 to 30000
Power Transistors
2SB1493
PC Ta
IC VCE
TC=25C
IB=5mA
10
Collector current IC (A)
60
100
50
1mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
Collector to emitter saturation voltage VCE(sat) (V)
(1) TC=Ta
(2) With a 100 100 2mm
Al heat sink
(3) Without heat sink
(1)
(PC=2.5W)
70
VCE(sat) IC
12
IC/IB=1000
30
10
TC=100C
M
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Collector power dissipation PC (W)
80
40
30
20
(2)
0.2mA
0.1mA
40
60
80 100 120 140 160
10
12
Forward current transfer ratio hFE
30000
25C
TC=100C
25C
3000
1000
TC=25C
25C
0.3
10
30
tin
on
Di
sc
ton, tstg, tf IC
100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=1000
(IB1=IB2)
VCC=50V
TC=25C
M
ain
tstg
tf
ton
te
na
10
30
0.3
10
Area of safe operation (ASO)
100
Non repetitive pulse

TC=25C
30
nc
e/
30
100
ue
300
10
0.01 0.03 0.1 0.3
100
ICP
10
t=1ms
IC
10ms
DC
Pl
0.3
0.1
0.1
0.03
0.03
0.01
0
12
16
0.01
1
10
30
100
Cob VCB
10000
10
1000
VCE=5V
30
0.1
0.1 0.3
0.1
0.1 0.3
hFE IC
100000
IC/IB=1000
100C
Collector to emitter voltage VCE (V)
VBE(sat) IC
100
25C
0.3
Collector output capacitance Cob (pF)
20
Ambient temperature Ta (C)
Base to emitter saturation voltage VBE(sat) (V)
0.3mA
25C
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(3)
Switching time ton,tstg,tf (s)
0.4mA
10
0
10
30
100 300 1000
Collector to emitter voltage VCE (V)
IE=0
f=1MHz
TC=25C
300
100
30
10
1
1
10
30
100
Collector to base voltage VCB (V)
tin
on
ue
103
102
101
Time t (s)
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0.1
104
Pl
M
ain
Thermal resistance Rth(t) (C/W)
M
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Power Transistors
2SB1493
1000
Rth(t) t
Note: Rth was measured at Ta=25C and under natural convection.

(1) PT=10V 0.2A (2W) and without heat sink
(2) PT=10V 1.0A (10W) and with a 100 100 2mm Al heat sink
100
(1)
10
(2)
10
102
103
104
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
pla d in
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M
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
M
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.

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Power Transistors

Optimum for 60W HiFi output

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector power TC=25C

Collector to emitter saturation voltage

Base to emitter saturation voltage

Forward current transfer ratio

Collector to emitter voltage

Emitter cutoff current

Collector cutoff current

VCE = 10V, IC = 0.5A, f = 1MHz

Absolute Maximum Ratings

IC = 6A, IB1 = 6mA, IB2 = 6mA,

5000 to 15000 8000 to 30000

Collector current IC (A)

Collector to emitter saturation voltage VCE(sat) (V)

Collector power dissipation PC (W)

80 100 120 140 160

Forward current transfer ratio hFE

Collector current IC (A)

Area of safe operation (ASO)

Non repetitive pulse

Collector current IC (A)

Collector current IC (A)

Collector current IC (A)

Collector current IC (A)

Collector to emitter voltage VCE (V)

Collector output capacitance Cob (pF)

Ambient temperature Ta (C)

Base to emitter saturation voltage VBE(sat) (V)

Switching time ton,tstg,tf (s)

100 300 1000

Collector to emitter voltage VCE (V)

Collector to base voltage VCB (V)

Thermal resistance Rth(t) (C/W)

Note: Rth was measured at Ta=25C and under natural convection.

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