seeno%6 Early effect From Wikipedia, the free encyclopedia The Early effect, named after its discoverer James M. Early, is the variation in the width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage. A greater reverse bias across the collector-base junction, for example, inercases the collector-base depletion width, decreasing the width of the charge carrier portion of the base. In Figure 1, the neutral (i.e. active) base is green, and the depleted base regions are hashed light green. The neutral emitter and collector regions are dark blue and the depleted regions hashed light blue. Under increased collector-base reverse bias, the lower panel of Figure 1 shows a widening of the depletion region in the base and the associated narrowing of the neutral base region. The collector depletion region also increases under reverse bias, more than does that of the base, because the collector is less heavily doped. The principle governing these two widths is charge neutrality. The narrowing of the collector does not have a significant effect as the collector is much longer than the base. The emitter-base junction is unchanged because the emitter-base voltage is the same. Base-narrowing has two consequences that affect the current: = There is a lesser chance for recombination within the "smaller" base region, = The charge gradient is increased across the base, and consequently, the current of minority carriers injected across the emitter junction increases. Both these factors increase the collector or "output" current of the transistor with an increase in the collector voltage, but only the second is called Early effect. This increased current is shown in Figure 2. Tangents to the characteristics at large voltages extrapolate backward to intercept the voltage axis at a voltage called the Early voltage, often denoted by the symbol V4. Contents ipsston wikipedia orgvikiErly fect Early eflect- Wikipedia Figure 1. Top: NPN base width for low collector base reverse bias; Bottom: narrower NPN base width for large collector—base reverse bias. Hashed areas are depleted regions. active region a Figure 2. The Early voltage (Va) as seen in the Yee output-characteristic plot of a BIT. 6ronnie Eel oect- Wicpea = 1 Large-signal model = 2 Small-signal model = 2.1 Current-voltage characteristics 3 References and notes 4 See also Large-signal model In the forward active region the Early effect modifies the collector current (Jc) and the forward common- emitter current gain (8p), as typically described by the following equations:(JI2] Yep Vow = Vr = To = Ise (1+ =) Br = Bro (1+ %2) Where = Vor is the collector-emitter voltage = Vr is the thermal voltage kT/q; see thermal voltage: role in semiconductor physics = Va is the Early voltage (typically 15 V to 150 V; smaller for smaller devices) = Bro is forward common-emitter current gain at zero bias. Some models base the collector current correction factor on the collector—base voltage Vp (as described in base-width modulation) instead of the collector-emitter voltage Vcy.!8! Using Von may be more physically plausible, in agreement with the physical origin of the effect, which is a widening of the collectorbase depletion layer that depends on Vog. Computer models such as those used in SPICE use the collectorbase 4] voltage Vop. The Early effect can be accounted for in small-signal circuit models (such as the hybrid-pi model) as a resistor defined asl] VatVor _ Va Ic Ie To in parallel with the collector-emitter junction of the transistor. This resistor can thus account for the finite output resistance of a simple current mirror or an actively loaded common-emitter amplifier. In keeping with the model used in SPICE and as discussed above using Vep the resistance becomes: _ Va+Ves To hiptenwikipeargikiary oft 26 Toar0'6 Early eflect- Wikipedia which almost agrees with the textbook result. In either formulation, rg varies with DC reverse bias Veg, as is observed in practice. In the MOSFET the output resistance is given in Shichman—Hodges model!*! (accurate for very old technology) as: _14+Mps _ 1 (1 ro = Abas - 4 (L450) where Vpg = drain-to-source voltage, Ip = drain current and \ = channel-length modulation parameter, usually taken as inversely proportional to channel length L. Because of the resemblance to the bipolar result, the terminology "Early effect" often is applied to the MOSFET as well. Current-voltage characteristics The expressions are derived for a PNP transistor. For an NPN transistor, n has to be replaced by p, and p has to be replaced by n in all expressions below. The following assumptions are involved when deriving ideal current-voltage characteristics of the BJT!7] Low level injection Uniform doping in each region with abrupt junctions One-dimensional current Negligible recombination-generation in space charge regions Negligible electric fields outside of space charge regions. Itis important to characterize the minority diffusion currents induced by injection of carriers. With regard to pn-junction diode, a key relation is the diffusion equation. #Aps(z) _ Aps(z) 2 2 dx! ih A solution of this equation is below, and two boundary conditions are used to solve and find ©; and C. Aps(2) = Chet + Che % The following equations apply to the emitter and collector region, respectively, and the origins 0, 0’, and 0” apply to the base, collector, and emitter. 2 2 Aje™® + Are te z 7 An,(2') = Bie™ + Boe Ans(e") A boundary condition of the emitter is below: anu) (ei -) Fipsslon wikipedia orgvikiErly fect a6ar0'6 Early eflect- Wikipedia The values of the constants Ay and By are zero due to the following conditions of the emitter and collector regions as 2" — Oand 2! 0 Anp(z") +0 An.(2!) +0 Because A; = By = 0, the values of Ang(0") and An,(0’) are Ag and Bo, respectively. Mes a Ame(e") = men (c= —1) «f Hes, a2 ane(d) no (5 -1) Expressions of Jn and Icn can be evaluated. dhe" Ton = —qADy AE@") dz | nar Wop Ton = -gA "nog (= - 1) Le Because insignificant recombination occurs, the second derivative of Aps() is zero. There is therefore a linear relationship between excess hole density and #. Apa (2) = Div + Do The following are boundary conditions of App App (0) = Da Aps(W) = DW + Aps(0) with W the base width. Substitute into the above linear relation. 1 Apa (2) = — 7 [Apa (0) — Apa (W)] 2 + Aps(0) With this result, derive value of Tgp as Tep(0) = ~gADy 2AP2 dx Top(0) = “22 (pe(0) — AraC] =0 Use the expressions of Igp, Tn. Apa (0), and Apa (W) to develop an expression of the emitter current. Fipsslon wikipedia orgvikiErly fect asszan0 at et ga Wop Aps(W) = pave App (0) = paoe D es wes te=aal( sme 4, Pape) (eS — 1) - De (= -1)| Similarly, an expression of the collector current is derived, Top(W) = Tep(0) Top(W) + Ton(0') Dp fe Donco , Depso sop Jo = 0h [Bboy (et) - (Bota « Bam) (4% -3)] An expression of the base current is found with the previous results. Ip =In—Io es en Ip=0A [Pees ( - 1) + 2 neg ( - )} Te To References and notes 1. R.C, Jaeger and TN. Blalock (2004). Microelectronic Circuit Design. McGraw-Hill Professional. p. 317. ISBN 0-07-250503-6. 2, Massimo Alioto and Gaetano Palumbo (2005). Model and Design of Bipolar and Mos Current-Mode Logic: CML, ECL and SCL Digital Circuits. Springer. ISBN 1-4020-2878-4. 3. Paolo Antognetti and Giuseppe Massobrio (1993). Semiconductor Device Modeling with Spice. McGraw-Hill Professional. ISBN 0-07-134955-3, 4, Orcad PSpice Reference Manual named PSpcRef. pdf (http://people.clarkson.edu/~ortmeyer/ee21 l/pspice%20file sipspetef pat), p. 209. This manual is included with the free version of Oread PSpice, but they do not maintain a copy on line, If the link given here expires, try Googling PSpcRef.pdf. 5. R.C, Jaeger and TN. Blalock (2004). Microelectronic Circuit Design (Second ed.). McGraw-Hill Professional. pp. Eq. 13.31, p. 891. ISBN 0-07-232099-0. 6. The Shichman-Ilodges Enhancement MOSFET Model and SwitcherC AD III SPICE, Report NDT14-08-2007, ‘NanoDotTek, 12 August 2007 (http://www.m2Imedsense.comv/media/c4cl 5e87c7266bdfft18 lbaffffe4 5.pdt,) 7. RS Mullet, Kamins TI & Chan M (2003). Device electronics for integrated circuits (Third ed.). New York: Wiley. p. 280 ff. ISBN 0-471-59398-2. See also = Small-signal model Retrieved from "https://en.wikipedia.org/w/index.phptitle-Early_effect&oldid=746595854" Categories: Transistor modeling Fipsslon wikipedia orgvikiErly fect 56samrore Early efect- Wik peta is page was last modified on 28 October 2016, at 10:45. xt is available under the Creative Commons Attribution-ShareA like License; additional terms may apply. By using this site, you agree to the Terms of Use and Privacy Policy. Wikipedia® is a registered trademark of the Wikimedia Foundation, Inc., a non-profit organizs Fipsslon wikipedia orgvikiErly fect 86