Threshold Voltage Calculation
Threshold Voltage Calculation
(mcc8)
where the flatband voltage, VFB, is given by:
(mcc4)
with
(mcc3)
and
(mcc3a)
The threshold voltage dependence on the doping density is illustrated with the figure below for
both n-type and p-type MOS structures with an aluminum gate metal.
threshol.xls - threshol.gif
Fig.7.3.1 Threshold voltage of n-type (upper curve) and p-type (lower curve) MOSFETs
versus substrate doping density.
The thresholds of both types of devices is slightly negative at low doping densities and differs by
4 times the absolute value of the bulk potential. The threshold of nMOS capacitors increases with
doping while the threshold of pMOS structures decreases with doping in the same way. A
variation of the flatband voltage due to oxide charge will cause both curves to move down if the
charge is positive and up if the charge is negative.