Big Lord Theory Base

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT

General Description
Applications
The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the

next generation ignition IGBTs that offer outstanding SCIS
capability in the space saving D-Pak (TO-252), as well as the
industry standard D-Pak (TO-263) and TO-220 plastic packages.
This device is intended for use in automotive ignition circuits,
specifically as a coil driver. Internal diodes provide voltage clamping
without the need for external components.
Automotive Ignition Coil Driver Circuits

Coil- On Plug Applications
EcoSPARK devices can be custom made to specific clamp

voltages. Contact your nearest Fairchild sales office for more
information.
Features
Space saving D - Pak package available
SCIS Energy = 200mJ at TJ = 25oC
Logic Level Gate Drive
Formerly Developmental Type 49444
Package
Symbol
COLLECTOR
JEDEC TO-252AA
D-Pak
JEDEC TO-263AB
D-Pak
JEDEC TO-220AB
E
C
G
R1
GATE
R2
E
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25C unless otherwise noted

Symbol
BVCER
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Ratings
430
Units
V
BVECS
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
24
ESCIS25
At Starting TJ = 25C, ISCIS = 11.5A, L = 3.0mHy
200
mJ
ESCIS150
At Starting TJ = 150C, ISCIS = 8.9A, L = 3.0mHy
120
mJ
IC25
Collector Current Continuous, At TC = 25C, See Fig 9
10
IC110
Collector Current Continuous, At TC = 110C, See Fig 9
10
VGEM
Gate to Emitter Voltage Continuous
10
PD
Power Dissipation Total TC = 25C
130
Power Dissipation Derating TC > 25C
0.87
W/C
Operating Junction Temperature Range
-40 to 175
Storage Junction Temperature Range
-40 to 175
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
300
Tpkg
Max Lead Temp for Soldering (Package Body for 10s)
260
ESD
Electrostatic Discharge Voltage at 100pF, 1500
kV
TJ
TSTG
TL
2002 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B2, April 2002
April 2002
Device Marking
V2040D
Device
ISL9V2040D3S
Package
TO-252AA
Tape Width
16mm
Quantity
2500
V2040S
ISL9V2040S3S
TO-263AB
24mm
800
V2040P
ISL9V2040P3
TO-220AB
Electrical Characteristics TA = 25C unless otherwise noted

Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics

BVCER
Collector to Emitter Breakdown Voltage
IC = 2mA, VGE = 0,
RG = 1K, See Fig. 15
TJ = -40 to 150C
370
400
430
BVCES
Collector to Emitter Breakdown Voltage
IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150C
390
420
450
BVECS
Emitter to Collector Breakdown Voltage
IC = -75mA, VGE = 0V,

TC = 25C
30
BVGES
Gate to Emitter Breakdown Voltage
IGES = 2mA
Collector to Emitter Leakage Current
VCER = 250V,
RG = 1K,
See Fig. 11
ICER
IECS
Emitter to Collector Leakage Current
R1
Series Gate Resistance
R2
Gate to Emitter Resistance
12
14
TC = 25C
25
TC = 150C
mA
VEC = 24V, See TC = 25C

Fig. 11
TC = 150C
mA
40
mA
70
10K
26K
On State Characteristics
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 6A,
VGE = 4V
TC = 25C,
See Fig. 3
1.45
1.9
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 10A,
VGE = 4.5V
TC = 150C
See Fig. 4
1.95
2.3
12
nC
TC = 25C
1.3
2.3
TC = 150C
0.75
1.8
3.4
Dynamic Characteristics
QG(ON)
Gate Charge
IC = 10A, VCE = 12V,

VGE = 5V, See Fig. 14
VGE(TH)
Gate to Emitter Threshold Voltage
IC = 1.0mA,
VCE = VGE,
See Fig. 10
VGEP
Gate to Emitter Plateau Voltage
IC = 10A,
VCE = 12V
Switching Characteristics
td(ON)R
triseR
td(OFF)L
tfL
SCIS
Current Turn-On Delay Time-Resistive

Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching
VCE = 14V, RL = 1,
VGE = 5V, RG = 1K
TJ = 25C
0.61
2.17
VCE = 300V, L = 500Hy,

VGE = 5V, RG = 1K
TJ = 25C, See Fig. 12
3.64
2.36
TJ = 25C, L = 3.0mHy,
RG = 1K, VGE = 5V, See
Fig. 1 & 2
200
mJ
TO-252, TO-263, TO-220
1.15
C/W
Thermal Characteristics
RJC
Thermal Resistance Junction-Case
Package Marking and Ordering Information
20
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
20
RG = 1K, VGE = 5V,Vdd = 14V
18
16
14
TJ = 25C
12
10
TJ = 150C
8
6
4
2
SCIS Curves valid for Vclamp Voltages of <430V
0
0
20
40
60
80
100
120
140
160
180
16
14
TJ = 25C
12
10
8
TJ = 150C
6
4
2
0
200
RG = 1K, VGE = 5V,Vdd = 14V
18
SCIS Curves valid for Vclamp Voltages of <430V

0
tCLP, TIME IN CLAMP (S)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE = 6A
VGE = 3.7V
VGE = 4.0V
1.45
1.40
VGE = 4.5V
1.35
VGE = 5.0V
1.30
VGE = 8.0V
1.25
-75
-25
25
75
125
2.4
ICE = 10A
VGE = 4.0V
2.0
1.8
VGE = 4.5V
1.6
VGE = 8.0V
1.4
175
VGE = 3.7V
2.2
-75
TJ, JUNCTION TEMPERATURE (C)
25
75
125
175
20
Figure 4. Collector to Emitter On-State Voltage

vs Junction Temperature
ICE, COLLECTOR TO EMITTER CURRENT (A)
-25
VGE = 5.0V
Figure 3. Collector to Emitter On-State Voltage vs

Junction Temperature
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V
15
10
Figure 2. Self Clamped Inductive Switching

Current vs Inductance
1.60
1.50
L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching

Current vs Time in Clamp
1.55
VGE = 4.0V
VGE = 3.7V
10
TJ = - 40C
20
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V
15
VGE = 4.0V
VGE = 3.7V
10
5
TJ = 25C
0
0
0
1.0
2.0
3.0
4.0

Collector Current
1.0
2.0
3.0
4.0
Figure 6. Collector to Emitter On-State Voltage

vs Collector Current
Typical Performance Curves (Continued)
30
VGE = 8.0V
20
VGE = 5.0V
VGE = 4.5V
15
VGE = 4.0V
VGE = 3.7V
10
TJ = 175C
0
1.0
2.0
3.0
DUTY CYCLE < 0.5%, VCE = 5V

PULSE DURATION = 250s
25
20
15
10
TJ = 25C
5
TJ = -40C
0
4.0
TJ = 150C
1.0
2.0
3.0
4.0

Collector Current
Figure 8. Transfer Characteristics

2.4
15.0
VCE = VGE
VTH, THRESHOLD VOLTAGE (V)
ICE, DC COLLECTOR CURRENT (A)
VGE = 4.0V
12.5
10.0
7.5
5.0
2.5
5.0
VGE, GATE TO EMITTER VOLTAGE (V)
ICE = 1mA
2.2
2.0
1.8
1.6
1.4
1.2
25
50
75
100
125
150
-50
175
-25
TC, CASE TEMPERATURE (C)
25
50
75
100
125
150
175
TJ JUNCTION TEMPERATURE (C)
Figure 9. DC Collector Current vs Case

Temperature
Figure 10. Threshold Voltage vs Junction

Temperature
10000
10
ICE = 6.5A, VGE = 5V, RG = 1K
1000
Inductive tOFF
SWITCHING TIME (S)
LEAKAGE CURRENT (A)
VECS = 24V
100
10
VCES = 300V
6
Resistive tOFF
4
1
Resistive tON
VCES = 250V
0.1
-50
-25
25
50
75
100
125
150
Figure 11. Leakage Current vs Junction

Temperature
175
25
50
75
100
125
150
175
Figure 12. Switching Time vs Junction

Temperature
1200
IG(REF) = 1mA, RL = 1.25, TJ = 25C

VGE, GATE TO EMITTER VOLTAGE (V)
FREQUENCY = 1 MHz
C, CAPACITANCE (pF)
1000
800
CIES
600
400
CRES
200
COES
7
6
VCE = 12V
5
4
3
2
VCE = 6V
1
0
0
0
10
15
20
25
10
15
20
25
QG, GATE CHARGE (nC)
Figure 13. Capacitance vs Collector to Emitter

Voltage
Figure 14. Gate Charge
415
BVCER, BREAKDOWN VOLTAGE (V)
ICER = 10mA
410
TJ = - 40C
405
400
395
TJ = 175C
390
TJ = 25C
385
380
375
370
10
100
1000
2000
3000
RG, SERIES GATE RESISTANCE (k)
ZthJC, NORMALIZED THERMAL RESPONSE
Figure 15. Breakdown Voltage vs Series Gate Resistance
100
0.5
0.2
t1
0.1
10-1
PD
0.05
t2
0.02
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZJC X RJC) + TC
0.01
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
10-1
100
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
L
VCE
R
or
L
PULSE
GEN
LOAD
RG
RG = 1K
DUT
DUT
VCE
5V
E
E
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
BVCES
VCE
tP
VCE
L
IAS
VDD
VARY tP TO OBTAIN
REQUIRED PEAK IAS
RG
VDD
-
VGE
DUT
tP
0V
IAS
0
0.01
tAV
Figure 19. Unclamped Energy Test Circuit
Figure 20. Unclamped Energy Waveforms
Test Circuit and Waveforms
th
JUNCTION
REV 25 April 2002

ISL9V2040D3S, ISL9V2040S3S, ISL9V2040P3
CTHERM1 th 6 1.3e -2
CTHERM2 6 5 8.8e -4
CTHERM3 5 4 8.8e -3
CTHERM4 4 3 3.9e -1
CTHERM5 3 2 3.6e -1
CTHERM6 2 tl 1.9e -1
RTHERM1
CTHERM1
RTHERM1 th 6 1.2e -1
RTHERM2 6 5 3.2e -1
RTHERM3 5 4 1.7e -1
RTHERM4 4 3 1.2e -1
RTHERM5 3 2 1.3e -1
RTHERM6 2 tl 2.5e -1
RTHERM2
CTHERM2
SABER Thermal Model

SABER thermal model
ISL9V2040D3S, ISL9V2040S3S, ISL9V2040P3
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 1.3e -3
ctherm.ctherm2 6 5 = 8.8e -4
ctherm.ctherm6 2 tl = 1.9e -1
RTHERM3
CTHERM3
RTHERM4
CTHERM4
rtherm.rtherm1 th 6 = 1.2e -1
rtherm.rtherm2 6 5 = 3.2e -1
rtherm.rtherm6 2 tl = 2.5e -1
}
RTHERM5
CTHERM5
CTHERM6
RTHERM6
tl
CASE
SPICE Thermal Model
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
EcoSPARK
E2CMOSTM
EnSignaTM
FACT
FACT Quiet Series
FAST
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
I2C
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE
OPTOLOGIC
OPTOPLANAR
PACMAN
POP
Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
SILENT SWITCHER UHC

SMART START
UltraFET
SPM
VCX
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H5

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ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3

EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT

The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the

Automotive Ignition Coil Driver Circuits

EcoSPARK devices can be custom made to specific clamp

Formerly Developmental Type 49444

Device Maximum Ratings TA = 25C unless otherwise noted

Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)

At Starting TJ = 25C, ISCIS = 11.5A, L = 3.0mHy

At Starting TJ = 150C, ISCIS = 8.9A, L = 3.0mHy

Collector Current Continuous, At TC = 25C, See Fig 9

Collector Current Continuous, At TC = 110C, See Fig 9

Gate to Emitter Voltage Continuous

Power Dissipation Total TC = 25C

Power Dissipation Derating TC > 25C

Operating Junction Temperature Range

Storage Junction Temperature Range

Max Lead Temp for Soldering (Package Body for 10s)

Electrostatic Discharge Voltage at 100pF, 1500

2002 Fairchild Semiconductor Corporation

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B2, April 2002

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3

Electrical Characteristics TA = 25C unless otherwise noted

Off State Characteristics

Collector to Emitter Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Collector Breakdown Voltage

IC = -75mA, VGE = 0V,

Gate to Emitter Breakdown Voltage

Collector to Emitter Leakage Current

Emitter to Collector Leakage Current

Series Gate Resistance

Gate to Emitter Resistance

VEC = 24V, See TC = 25C

Collector to Emitter Saturation Voltage

Collector to Emitter Saturation Voltage

IC = 10A, VCE = 12V,

Gate to Emitter Threshold Voltage

Gate to Emitter Plateau Voltage

Current Turn-On Delay Time-Resistive

VCE = 300V, L = 500Hy,

TO-252, TO-263, TO-220

Thermal Resistance Junction-Case

2002 Fairchild Semiconductor Corporation

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B2, April 2002

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3

Package Marking and Ordering Information

ISCIS, INDUCTIVE SWITCHING CURRENT (A)

RG = 1K, VGE = 5V,Vdd = 14V

SCIS Curves valid for Vclamp Voltages of <430V

tCLP, TIME IN CLAMP (S)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (C)

Figure 4. Collector to Emitter On-State Voltage

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ, JUNCTION TEMPERATURE (C)

Figure 3. Collector to Emitter On-State Voltage vs

Figure 2. Self Clamped Inductive Switching

Figure 1. Self Clamped Inductive Switching