Department of Electronics and Communication Engineering

Bhoj Reddy Engineering College for Women, Hyderabad

Basic Electrical and Electronics Engineering (BEEE)
Academic Year: 2016-17

I B.Tech I semester

Branch: ECE A, B and C

Text Books:
B1: M S Sukija,T K Nagasarkar Basic Electrical and Electronics Engineering- Oxford University.
B2: DP Kothari, IJ Nagrath Basic Electrical and Electronics Engineering- Mc Graw Hill
Education.
B3: R.L Boylestad and Lousi Nashelsky, Electronic Devices and Circuits , 9/ e, PEI/PHI, 2006.
B4: J. Milliman, C.C. Halkias and Satyabrata Jit, Electronic Devices and Circuits , 2/ e, TMH,
1998.
B5: William Hayt and Jack E. Kemmerly,Engineering Circuit analysus 6/e, Mc Graw Hill
Company.
B6: Raymond A. Decarlo and pen-min-LinLinear circuit analysis, 2/e, Oxford University Press
-2004.
B7: N C Jagan and C Lakshminarayana Network Theory , B S Publications.
B8: Sudhakar, Shyam Mohan Palli, Network Theory, TMH.
UNIT-I:

List of questions:
1. a)Explain in detail the volt-ampere relationship of R, L and C elements with neat diagrams.
(B1:pp.13)
b) A Current having a variation shown in fig is applied to a pure inductor having a value of

2 H. Calculate the voltage across the inductor at time t=1 and t=3 sec.

(B1:pp.18)

2. a) Explain the independent and dependent sources with symbols

b)What is Source transformation and explain how can we exchange sources

(B1:pp.44)
(B1:pp.49)

3. a) An independent voltage source has an open circuit voltage of 24v and an internal
resistance of 0.75 . Transform the voltage source into equivalent current source and
draw its equivalent circuit when it supplies a load of 10 . Prove that the external
behaviour of the two sources is the same.
(B1:pp.50)
b)State and explain Kirchoffs laws.
(B1:pp.30)
4. a) Determine the currents in all resistors in the circuit shown in below fig.

(B8:pp.17)
b)For the circuit shown in fig below find the voltage across the 10 resistor and the
current passing through it

[B8:pp.18)

5. a) Obtain the expressions for star-delta equivalence of resistive network. (B1:pp.61)

b) Obtain the star connected equivalent for the delta connected circuit shown in fig

(B8:pp.103)
C) Obtain the delta equivalent circuit for the star connected network shown below
(B8:pp.104)

6. a) Explain the nodal analysis method

(B1:pp.64)

b) Using the node voltage analysis for the circuit shown in fig and find all the node voltages
and currentys in 1/3, 1/5 and 1/6 resistances.

7. a) Explain the Mesh analysis method

b)Using the mesh current analysis, find the voltage across the 3 resistor

(B1:pp.68)

(B1:pp.69)
(B1:pp.70)

8. a) Explain the voltage divider rule with series resistive circuit

b) Explain the current divider rule with parallel resistive circuit

(B1:pp.52)
(B1:pp.53)

9. In the circuit shown in fig , Calculate a) Currents I,I1 and I2 (b) The power consumed by each
resistor and (c) The voltage drop V2 across the 2 resistor.

(B1:pp.61)

Single phase AC Circuits

B1 : Basic Electrical and electronics Engineering M.S Sukija TK Nagasarkar Oxford
University.
B2 : Basic Electrical and electronics Engineering- D P Kothari I J Nagarath Mc Graw Hill
Education
1. A 25 ohms resistor is connected across a voltage source V (t) = 150 Sin t. Find the current I
(t) and the instantaneous power P(t) and also the average power. Draw the relevant waveforms.
(Previous Paper)
2. A 20 ohms resistor is connected across a voltage source V (t) = 200 Sin t. Find the current I
(t) and the instantaneous power P(t) and also the average power. Draw the relevant waveforms.
(Previous Paper)
3.Illustrate following terms:
i) Impedance
ii) Reactance
iii) Phase deference
iv) Power factor.
( B1:pp. 204)
4.A circuit consists of a resistance of 10 and inductor of 50mH are connected in series. If
supply of 230V, 50Hz is applied to the ends of circuit. Calculate
i) Current flowing in the circuit
ii) Phase angle of the current.
(B1: pp.206)
5.Determine the circuit current and p.f for the following network shown in figure

6.Determine the input impedance of the circuit shown in below Fig

(Previous Paper)
at = 10 rad/s.

(Previous Paper)
7.Find the input impedance of the circuit shown in below Fig. Assume that the circuit operates
at = 50 rad/s. If Z1=10+j15, Z2=20+j25 and Z3=4-10j where Z1 is in series with
parallel
combination of Z2 and Z3.
(B1: pp. 224)
8. A coil of resistance 25 ohm and inductance 0.159H is in parallel with a circuit having 60 ohm
and 125 micro farad capacitor. This parallel circuit is connected to a 230-v 50- Hz supply.
Calculate a) the supply current and b) the equivalent circuit impedance, resistance and
reactance.
( B1:pp. 226)
9.For the circuit shown in fig , determine the total impedance , total current and phase angle.

( Previous paper)
10. A coil having a resistance of 8 ohm and an inductance of 0.05H is connected across a 230-V,
50 Hz supply. Calculate a) the current b) the phase angle between the current and supply voltage
c) the apparent power d) the active power and e) The reactive power
(B1:pp.236)

11.When 220V, 50Hz ac supply is supplied across terminals AB in the circuit shown in Fig., the
total power input is 3.25 kW and the current is 20A. Find the current through Z 3.

(Previous Paper)
12. A resistor R in series with a capacitor C is connected to a 230-V, 50- Hz supply. Find a) the
value of C so that R absorbs 500W at 100V b) the maximum voltage across the capacitor and
the c) the phase angle between the current and the supply voltage.
(B1: pp. 210)
13. A resistance of 6 ohm is connected in series with
inductance L connected in series across a voltage source
drop across the resistance of 120V and choke coil
inductance, impedance of the choke coil and b) its power

a choke having a resistance r and

with voltage 240v , 50 Hz . the voltage
is 205V . Calculate a) resistance,
and the power factor (B2: pp. 3.35)

14.Determine RMS value of the voltage waveform given below.

(Previous paper)
15.Define the following terms: i) RMS value ii) Average value iii) Form factor iv) Peak factor
(B1: pp.. 180)
16. Determine the average and effective values of saw-tooth waveform as shown in below figure 2.

17.Define the RMS value and obtain an expression for the RMS value of sinusoidal current.
(B1: pp.. 180)
18.Explain the significance of j-operator. What are the different forms of expressing the
sinusoidal quantity in complex form?
(B1: pp.192)
19.Compute the RMS and average values of square wave form shown in below figure 2.

(Previous Paper)
20.Find the average value, RMS value, peak factor and form factor for the following wave form
shown in Figure.3.

21.In the circuit shown below Figure.4, the first branch takes a leading current (I1) of 15A and
has a resistance of 5 , while the second branch takes a lagging current (I2) at a p.f. of 0.8. The
total power supplied is 5 kW. Determine the impedances and circuit parameters

22. Show that power dissipated by a pure capacitor exited by a sinusoidal voltage source V = Vm
Sin t is zero.
23. A circuit consisting of three branches, Z 2 is in parallel with Z3 the combination is in series
with Z1 having the values Z1=10+j30, Z2 = 5+j10and Z3 = 4-j16 connected across single phase,
100 V, 50 Hz supply. Find Total impedance.
24. Find form factor of triangular waveform shown in the figure.

25.Find form factor of a non alternating periodic waveform shown in figure

(Previous Paper)

(Previous Paper)
26.A parallel circuit having two branches, first branch consisting of 3 ohms resistor is in series with
12.7 mH inductor, second branch consisting of 1 ohm resistor in series with 3.18 mH is
connected across 200 V, single phase, 50 Hz supply.
Calculate:
a) Conductance and susceptance of each branch
b) The resultant admittance
c) The current in each branch
d) Total current input
27. Explain in detail about steady state analysis of RLC circuit
(B1: pp. 211)
28. Explain the steady state excitation for pure inductor, capacitor and resistor
(B1: pp. 198)
29. Given phasor A=6.34+j13.59 and B=20 at an angle -35 degree write down the following in
rectangular and polar form a) A+B b) A/B c) (A+B)/(A-B)
d) (A+B)*B/(A-B)*A
(B1: pp. 195)
30. Explain in detail about steady state analysis of parallel RLC circuit.
(B1: pp.. 221)
31. Explain in detail about series parallel combination of impedances.
[B1: pp. 225)
32. Explain in detail about the steady state excitation of R-L connected in series and in parallel.
(B1: pp. 203,218)
33. Explain in detail about the steady state excitation of R-C connected in series and in parallel.
(B1: pp. 207,
219)

UNIT-II:

Resonance: Series resonance, Parallel Resonance, Concept of bandwidth and Q factor,

Locus diagrams
Text books:
B1. Basic Electrical and Electronics Engineering-M S Sukija TK Nagasarkar Oxford
University.
B2.Network Theory by Sudhakar, Shyam Mohan Palli,TMH.
1.
2.
3.
4.

Define resonance, band width, quality factor and selectivity.

[B1 Pg:238-243]
Derive the expression for band width of RLC series circuit.
[B1 Pg 242-243]
Show that Q0 = 0L/R = f0 / BW for a series RLC circuit.
[B2 Pg 288-289]
Show that the resonant frequency 0 of an RLC series circuit is the geometric mean of 1 and
2, the lower and upper half power frequencies respectively.
[B2 Pg 285-287]
5.a)Derive the equation for resonant frequency for parallel RLC circuit.
[B2 Pg 290-291]
b)A series RLC circuit has inductance of 20mH and resistance of 4, resonant
frequency is 10kHz. Find capacitance.
(self)
6. A series resonant circuit has the following parameters:
i) Resonance frequency = 3106 Hz,
ii) Band width = 105Hz and R = 4.
iii) Calculate L and C of the network, half power frequency and power quality.
(self)
7. Obtain the current locus of a fixed resistance and a variable capacitance when
connected with voltage of variable frequency.
[B2 Pg 299-300]
8. Explain the procedure to draw the locus diagram of R-L series circuit when L is varying.
[B2 Pg 299-300]
9. Explain the procedure to draw the locus diagram of R-L-C series circuit when varying XL
and XC.
[B2 Pg 302-305]
10. Explain the procedure to draw the locus diagram of R-C series circuit when C is varying.
[B2 Pg 299-300]
11. Determine the frequency at which the circuit resonates .also find the voltage across the
inductor at resonance and the Q factor of the circuit(R=10 L=0.1H, C=50F, V rms=100).
[B2 Pg 308]
12. A series RLC circuit has a quality factor of at 50rad/sec. The current flowing through the
circuit at resonance is 10A and the supply voltage is 100V.The total impedance of the
circuit is
20 .Find the circuit constants.
[B2 Pg 308]
13. A maximum current of 0.1A flows through the circuit when the capacitor is at 5 F with a
fixed frequency and a voltage of 5V.Determine the frequency at which the circuit resonates,
the bandwidth, the quality factor and the value of resistance at resonant frequency at
L=0.1H.
.
[B2 Pg 312]
14. A series circuit has a resistance of 2 , an inductance of 0.25H,a variable capacitance
,connected across a 230v,50Hz supply calculate
a) the value of the capacitance at resonance
b) the voltage across the inductance and the capacitance at resonance
c) the Q factor for the circuit
[B1 Pg 243]

15.A coil of inductance 10 and resistance 100 in series with a condenser is supplied a
constant voltage from a variable frequency source.if the maximum current is 1A at
100Hz,find the frequencies when the current is 0.5A. .
[B1 Pg 244]

Network

Theorems:

Thevenins,

Nortons,

Maximum Power Transfer, Superposition,

Reciprocity, Tellegens. Millimans and Compensation Theorems for AC and DC excitations.

Text Books:
B1.Basic
Electrical
and
Electronics
Engineering-MS.Sukhija,T.K.Nagasarkar,Oxford
University.
B2.Basic Electrical and Electronics Engineering-D.P.Kothari,I.J.Nagarath, MC Graw Hill
Education.
B3. Network Theory by Sudhakar, Shyam Mohan Palli, TMH, 2003 Edition.
List of Questions:
1. State Thevenins theorem for DC excitations & explain with suitable example. (B1: pp. 76)
2. Use Thevenins theorem to find the current through the 6 resistor in the circuit shown in
figure.
(B1: pp. 77)

3. For the circuit shown in figure determine the current through the 5 resistor connected across
the terminals A and B by using Thevenins theorem.

(B1: pp. 80)

4. Find Thevenins equivalent for the circuit shown in figure below.

(B1: pp.80)

5. Find the Theveninss equivalent between A and B for the circuit shown in Fig. below.
(Previous question Paper)

6. Find thevenins equivalent circuit for the circuit shown in below Figure. (B3: pp. 129)

7. By using Thevenins theorem determine the current through 5 resistor (All resistances are in
) as shown in figure.

(B3: pp.128)

8. State Nortons theorem for DC excitations & explain with suitable example. (B1: pp.81)
9. Determine the current in the 4 resistor of the circuit shown in figure using Nortons theorem.
(B1: pp.82)

10. Find the Nortons equivalent of the circuit of figure as seen at terminals ab. (B2: pp. 2.33)

11. Find the Thevenins and Nortons equivalent of the circuit of figure as seen at terminals ab.

(B2: pp. 2.28)

12. By using Nortons theorem determine the current through 5 resistor. (Self)

13. Determine the Nortons equivalent of circuit shown in figure. (Previous Question Paper)

14. State Maximum Power Transfer theorem for DC excitations & explain with suitable example.
(B1: pp. 83)
15. Determine the maximum power delivered to the load in the circuit shown in figure.
(B3: pp. 138)

16. Derive the load resistance to receive maximum power from the source & determine its value
for the below circuit, also find the maximum power delivered to the load.
(B3: pp.139)

17. State Superposition theorem for DC excitations & explain with suitable example. (B1: pp.75)
18. In the circuit shown in below figure find the node voltages V1 and V2 using the superposition
theorem.

(B2: pp. 2.25 )

19. Find the voltage Across the 2 resistor in figure by using superposition theorem (B3: pp. 103)

20. Find the current in the 7- resistor across AB of the network shown in figure 4 using
superposition theorem.
(Previous Question Paper)

21. For the resistive network shown in figure find the current in each resistor, using
superposition theorem.

(B3: pp. 125)

22. State Reciprocity theorem for DC excitations & explain with suitable example. (B3: pp. 112)
23. Verify reciprocity Theorem for the network shown in figure. (Previous Question Paper)

24. Verify reciprocity Theorem for the network shown in figure.

(B3: pp.113)

25. Verify reciprocity Theorem for the network shown in figure.

(B3: pp. 137)

26. State Tellegens theorem for DC excitations & explain with suitable example. (B3: pp. 119)
27. State Millmans theorem for DC excitations & explain with suitable example.(B3: pp. 120)

28. Calculate the current I shown in figure using Millmans Theorem. (B3: pp. 121)

29. State Compensation theorem for DC excitations & explain with suitable example.
(B3: pp. 114)
30.Using the compensation theorem, determine the ammeter reading where it is connected to the
6 resistor as shown in figure. The internal resistance of the ammeter is 2. (B3: pp. 135)

31.Find the Thevenins equivalent at AB and from there the complex power fed to the load.What
should be the load impedance so that it receives maximum power?

(B2: pp. 3.38)

32. For the network shown in the figure what load impedance across terminals ab would absorb
maximum average real power? What is the value of this real power?

(B2: pp. 3.39)

33. Find the Thevenin and Norton equivalents as seen from the terminals a and b of the circuit
shown in the figure and draw the equivalent circuits.

(B2: pp. 3.34)

34.For the circuit of figure, find the current i(t) using the superposition theorem. (B2: pp. 3.29)

35.Find the values of RL and XL for maximum power absorption and the value of the maximum
power.

(B2: pp. 3.26)

36.Find the value of load impedance for which the sourse delivers maximum power. Calculate the
value of maximum power.

(B3: pp. 252)

37. For the circuit shown in the figure determine Nortons equivalent circuit between the output
terminals AB

(B3: pp. 250)

38. For the circuit shown in the figure determine Thevenins equivalent circuit between the output
terminals AB

(B3: pp. 250)

UNIT-III
P-N Junction Diode: Diode equation, Energy Band diagram, Volt-Ampere characteristics,
Temperature dependence, Ideal versus practical, Static and dynamic resistances,
Equivalent circuit, Load line analysis, Diffusion and Transition Capacitances.
Rectifiers and Filters: P-N junction as a rectifier - Half Wave Rectifier, Ripple Factor - Full
Wave Rectifier, Bridge Rectifier, Harmonic components in Rectifier Circuits, Filters
Inductor Filters, Capacitor Filters, L- section Filters, - section Filters.
Text Books :
B1.J. Milliman, C.C. Halkias and Satyabrata Jit, Electronic Devices and Circuits , 2/ e, TMH,
1998.
B2. R.L Boylestad and Lousi Nashelsky, Electronic Devices and Circuits , 9/ e, PEI/PHI, 2006.
B3. S. Salivahanan,N. Suresh Kumar,A. Vallavaraj, Electronic Devices and Circuits , 2/ e,
TMH, 2008.

List of questions:
1. a) Explain Energy Band diagram.

b) Derive diode current equation.

[B1:pp. 149)
(B1:pp. 123)

2. a) Describe the V-I characteristics of pn junction diode and define cut-in voltage and
breakdown voltage.

(B1:pp. 127)

b) Determine the forward bias voltage applied to a silicon diode to cause a forward current of
10 mA and reverse saturation current, Io = 25 A.

(B3:pp. 261)

3.a) Using the characteristics, determine the temperature at which the diode current will
be 50% of its value at room temperature 25 C.

(B2:pp. 87)

b) What is the effect of temperature on diode reverse current and barrier voltage?
(B1:pp. 130)
4.a) What is depletion region? How depletion region forms in an open circuited pn junction with
neat sketches.

(B3:pp. 2.26)

b) When a reverse bias voltage is applied to a germanium PN junction diode, the reverse
saturation current at room temperature is 0.3 A. Determine the current flowing in the
diode
when 0.15 V forward bias is applied at room temperature.

(B3:pp. 2.38)

5.a) Explain about ideal and practical diode.

b) Explain about static and dynamic resistances of a diode.

(B1:pp. 132)

6.a) What do you mean by diode capacitance? Derive expression for diffusion capacitance.
(B1:pp. 138)
b) Derive the expression for transiton capacitance.

(B1:pp. 134)

7.a) The reverse saturation current in a germanium diode is 6 A. Calculate the current flowing
through the diode when the applied forward bias voltages are 0.2, 0.3 and 0.4 V at room
temperature?
b) What is load line and Q-point? Explain load line analysis of a diode.

(B3:pp. 2.61)

8. What do you understand by depletion region at p-n junction? What is the effect of forward
and reverse biasing of p-n junction on the depletion region with necessary diagrams.
(B1:pp. 115)
9. A silicon diode has a saturation current of 7.5 A at room temperature 300o K. Calculate the
saturation current at 400o K.

(B3:pp. 2.45)

10. In a p-type semiconductor the fermilevel is 0.3 eV above the valence band at room
temperature of 300o K. Determine new position of the fermilevel for temperatures of (a) 350 o K
and (b) 400 o K.

(B3:pp. 2.9)

11. The diode current is 0.6 mA when the applied voltage is 400 mV, and 20 mA when the
applied voltage is 500 mV. Determine . Assume kT / q = 25 mV.

(B3:pp. 2.39)

12. a) Draw the circuit of a half-wave-rectifier and find out the ripple factor,
%regulation,efficiency and PIV ?
b) Compare the performance of inductor filter and capacitor filter.

( B3:pp. 3.3)
(B1:pp. 621)

13. a) With reference to the Rectifiers, explain the following terms:

i) Ripple Factor
ii) Efficiency
iii) Peak Inverse Voltage (PIV)
iv) % Regulation

( B3:pp. 3.3-3.9)

b) A 230V, 50Hz voltage is applied to the primary of a 5:1 step down, center tapped
transformer used in a full wave rectifier having a load of 900 . If the diode resistance and
the secondary coil resistance together have a resistance of 100 , determine
i) DC voltage across the load
ii) DC current flowing through the load
iii) DC power delivered to the load
iv) PIV across each diode

14. Give the comparison between HWR, FWR, and Bridge rectifier.

(B3:pp. 3.9)

( B3:pp. 3.13)

15. A 230 V-0-230 V input voltage is connected to a FWR. Claculted the DC, AC voltages, DC
and AC power developed across the load. Also calculate the DC, rms currents that will through
the load.
16. a) Derive the expression for the ripple factor of -Section filter when used with a Half-wave
rectifier. Make necessary approximations.

(B1:pp. 617)

b) Draw the circuit of a bridge rectifier and explain its operation with the help of input
and output waveforms.

17. Derive the expression for the ripple factor and write short notes on i nductor filter and
Capacitor Filter.

(B3:pp. 3.13, 3.16)

18. Derive and explain about L- Section filter and -Section filter.

(B1:pp. 616)

UNIT-IV:
Bipolar Junction Transistor (BJT): Construction, Principle of Operation, Symbol,
Amplifying Action, Common Emitter, Common Base and Common Collector configurations.
Transistor Biasing And Stabilization - Operating point, DC and AC load lines, Biasing Fixed Bias, Emitter Feedback Bias, Collector to Emitter feedback bias, Voltage divider bias,
Bias stability, Stabilization against variations in VBE and , Bias Compensation using
Diodes and Transistors.
Transistor Configurations: BJT modeling, Hybrid model, Determination of h-parameters
from transistor characteristics, Analysis of CE, CB and CC configurations using hparameters, Comparison of CE, CB and CC configurations.

List Of questions:
1.a) Explain the working operation of NPN transistor with the help of current component
diagram.

(B1:pp. 222)

b) Explain the working operation of PNP transistor with the help of current component
diagram.
c) Derive the relation between
i) and

ii) and iii) and

iv) and , .

2.a) Explain the input and output characteristics of CB configuration.

(B1:pp. 231)

b) The reverse saturation current in a transistor is 8 A. If the transistor CB current gain

is 0.979,calculate the collector and emitter current for a 40 A base current.(B3:pp. 4.18)
3. a) Explain the input and output characteristics of CE configuration.

(B1:pp. 234)

b) If the base current in a transistor is 30 A, when the emitter current is 7.2 mA, what are

the values of and ? Also calculated the collector current.

(B3:pp.4.20)

4.a) Explain briefly how transistor works as an amplifier and give their important characteristics.
b) Write short notes on

(B2: pp. 156)

i) Early effect
ii) Punch through effect

(B1:pp. 232,261;B3:pp. 4.16)

5. a) Why NPN transistor is preferred over PNP.

(B2:pp. 150)

b) Why transistor connected always in active region.

(B1:pp. 225)

6.a) What are h-parameters? What are the advantages of h-parameters.

(B1:pp. 294)

b) Draw h-parameter model for CB,CE and CC configurations and write the appropriate
equations.

(B1:pp. 296)

c) Determine the h-parameters from transistor characteristic curves.

(B1:pp. 298)

7. a) Draw the circuit diagram, small signal equivalent of Common Emitter amplifier using
accurate h parameter model. Derive expressions for Avs, Ais, Ri & RO.

(B2:pp. 92)

b) A CB amplifier is driven by a voltage source of internal resistance Rs = 1K. The load

impedance is 1K. The transistor parameters are hib = 22, hfb = -0.98, hrb = 2.9x10-4,
hob = 0.5 A/V. Compute Ai, Av, Ri, Ro of the amplifier.

(B2:pp. 104)

8. a) What do you mean by biasing a transistor? Explain the need of biasing a transistor for the
construction of a faithful amplifier?
(B3:pp. 5.1)
b) Draw the self bias circuit and obtain the expression for the stability factor. Describe the
advantages and disadvantages of self biasing.(B1: pp. 267; B4:pp. 343, 354; B5:pp. 5.11)
9. a) Derive the condition for thermal Stability in a BJT.
b) What is meant by Q point of a BJT? What is its significance?

(B1: pp. 290)

(B1: pp. 263; B2: pp. 186)

10. a) What is thermal runaway in transistors? Obtain the condition for thermal stability in
transistors.
b) Design a self bias circuit using silicon transistor to achieve a stability factor of 10, with the
following specifications: VCC = 16 V, VBE = 0.7 V, VCEQ = 8 V, ICQ = 4 mA. (B1: pp. 288)
11. a) Explain the basic requirements of transistor biasing. Verify these requirements in Emitter
feedback bias circuit.

(B1: pp. 271; B3:pp. 5.1)

b) An NPN Silicon transistor with =50 is used in a common emitter circuit with VCC=10V,
RC=2 K. The bias is obtained by connecting a 100 K resistance from collector to base.
Find i) Q-Point
ii) Stability factor, S
(B3:pp. 5.6)
12. a) What is a load line? Explain its significance.

(B1: pp. 265)

b) Find the Q-point of self-bias transistor circuit with the following specifications: VCC =
22.5 V, RL = 5.6 k, RC = 1 k, RI = 90 k, R2 = 10k, VBE = 0.7 V and = 55. Assume
IB >> ICO.

(B3:pp. 5.14)

13. a) What are the compensation techniques used for VBE and ICO. Explain with help of
suitablecircuits.
(B1: pp. 284)
b) Draw a fixed bias circuit and explain its operation.
(B1: pp. 264)

UNIT-V:
Junction Field Effect Transistor: Construction, Principle of Operation, Symbol, Pinch-Off
Voltage, Volt-Ampere Characteristic, Comparison of BJT and FET, Small Signal Model,
Biasing FET.
Special Purpose Devices: Breakdown Mechanisms in Semi-Conductor Diodes, Zener diode
characteristics, Use of Zener diode as simple regulator, Principle of operation and
Characteristics of Tunnel Diode (With help of Energy band diagram) and Varactor Diode,
Principle of Operation of SCR.

List Of questions:
1. a) Explain the operation of N-channel and P-channel JFET.
b) Define pinch-off voltage and transconductance in field effect transistors.

(B1:pp. 385)
(B1:pp. 288)

c) In an n-channel FET, the effective channel width is 3x10-4 cm and the donor impurity
concentration is 1015 electrons / cm3. find the pinch-off voltage

(B1:pp. 389)

2. a) Draw the small-signal model of common drain FET amplifier. Derive expressions for voltage
gain and output resistance.

(B1:pp. 392)

b) Calculate voltage gain AV = VO / Vi and RO at 1 KHz for the circuit shown in Figure.1.
FET parameters are gm=2mA/V and rd =10k. Neglect capacitances.

(B1:pp. 400)

Figure.1

3.a) With the help of a neat sketches and characteristics curves explain the construction &
operation of a JFET and draw the transfer and drain characteristics.
b )Derive expression for transconductance in a field effect transistors.

(B3:pp. 4.24)
(B1:pp. 392)

c) A Common Drain FET amplifier circuit shown in Figure.2 has the following circuit
parameters: RS = 0.5 K, Rg = 1 M, rd = 5 K, gm= 5 mS and VDD = 20 V. Calculate AV & RO.
(B1:pp. 402)

4.a) Draw the basic circuit and small-signal model of Common Drain FET amplifier. Derive
expressions for voltage gain and output resistance?

(B1:pp. 402)

b) Compare the merits & demerits of a Bipolar Junction Transistor (BJT) with Field Effect
Transistor (FET) in detail.

(B3:pp. 4.32)

5. a) Why is a Field Effect Transistor called unipolar & voltage controlled device? Explain the
drain & transfer characteristics of a JFET in detail.

(B1:pp. 390)

b) Compare BJT & FET.

6. a) What is zener diode? Explain V-I characteristics of zener diode.

b) Distinguish between Avalanche and Zener Breakdown mechanism.

(B3:pp. 4.32)

(B1:pp. 143)
(B1:pp. 127)

7. Draw the circuit of Zener diode as a voltage regulator. Explain its operation. (B3:pp. 3.21)

8. For the Zener diode circuit shown in Figure, determine VL, VR , IZ & R.

(B3:pp. 3.24)

9. What is tunneling? Describe the V-I characteristics of Tunnel diode. Also describe the negative
resistance property of tunnel diode.

(B1:pp. 147)

10. a) Draw the two-transistor model of SCR and explain its operation.
b) Draw the V-I characteristics of SCR.

11. Explain the principle of varactor diode and draw its characteristics.

(B1:pp. 137)