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Mccsemi: Features

This document provides specifications for the S9012 PNP silicon transistor in a TO-92 plastic package from MCC. The transistor is capable of dissipating 0.625 watts with a collector current of 0.5 amps and a collector-base voltage of 40 volts. It has a DC current gain ranging from 64 to 300 and an operating temperature range of -55 to +150 degrees Celsius. The document lists key electrical characteristics and dimensions of the transistor.

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37 views1 page

Mccsemi: Features

This document provides specifications for the S9012 PNP silicon transistor in a TO-92 plastic package from MCC. The transistor is capable of dissipating 0.625 watts with a collector current of 0.5 amps and a collector-base voltage of 40 volts. It has a DC current gain ranging from 64 to 300 and an operating temperature range of -55 to +150 degrees Celsius. The document lists key electrical characteristics and dimensions of the transistor.

Uploaded by

calverel
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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MCC

 
omponents
20736 Marilla Street Chatsworth

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S9012

Features

TO-92 Plastic-Encapsulate Transistors


Capable of 0.625Watts(Tamb=25 OC) of Power Dissipation.
Collector-current 0.5A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55OC to +150 OC
Marking Code: S9012

PNP Silicon
Transistors

Pin Configuration

TO-92
A

BE

Electrical Characteristics @ 25OC Unless Otherwise Specified


Symbol

Parameter

Min

Max

Units

40

---

Vdc

25

---

Vdc

5.0

---

Vdc

---

0.1

uAdc

---

0.2

uAdc

---

0.1

uAdc

OFF CHARACTERISTICS
V(BR)CBO

Collector-Base Breakdown Voltage


(IC=100uAdc, IE =0)
Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB =0)
Emitter-Base Breakdown Voltage
(IE =100uAdc, IC=0)
Collector Cutoff Current
(VCB=40Vdc, IE =0)
Collector Cutoff Current
(VCE=20Vdc, IB =0)
Emitter Cutoff Current
(VEB =5.0Vdc, IC=0)

V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO

ON CHARACTERISTICS
hFE(1)

DC Current Gain
(IC=50mAdc, V CE=1.0Vdc)
DC Current Gain
(IC=500mAdc, V CE=1.0Vdc)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB =50mAdc)
Base-Emitter Saturation Voltage
(IC=500mAdc, IB =50mAdc)
Base- Emitter Voltage
(IE =100mAdc)

hFE(2)
VCE(sat)
VBE(sat)
VEB

64

300

---

40

---

---

---

0.6

Vdc

---

1.2

Vdc

---

1.4

Vdc

DIMENSIONS

SMALL-SIGNAL CHARACTERISTICS
fT

Transistor Frequency
(IC=20mAdc, V CE=6.0Vdc, f=30MHz)

150

---

MHz

CLASSIFICATION OF HFE (1)


Rank
Range

E
78-112

F
96-135

G
112-166

H
144-220

INCHES
DIM
A
B
C
D
E
G

MIN
.175
.175
.500
.016
.135
.095

MAX
.185
.185
--.020
.145
.105

MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42

MAX
4.70
4.70
--0.63
3.68
2.67

NOTE

I
190-300

www.mccsemi.com
Revision: 2

2003/06/30

This datasheet has been downloaded from http://www.digchip.com at this page

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