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hw7 Ee143 f14 Web

This document is a problem set from an EE 143 Microfabrication Technology course at an unknown university. It contains 4 questions related to microfabrication processes: 1) estimating the time required for a nickel electroplating process, 2) simulating cross-sections after reactive ion etching of polysilicon, 3) calculating overetch and undercut for a polysilicon gate patterning process, and 4) two textbook problems on ion implantation. It was issued on October 14, 2014 and was due on October 24, 2014.

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77 views2 pages

hw7 Ee143 f14 Web

This document is a problem set from an EE 143 Microfabrication Technology course at an unknown university. It contains 4 questions related to microfabrication processes: 1) estimating the time required for a nickel electroplating process, 2) simulating cross-sections after reactive ion etching of polysilicon, 3) calculating overetch and undercut for a polysilicon gate patterning process, and 4) two textbook problems on ion implantation. It was issued on October 14, 2014 and was due on October 24, 2014.

Uploaded by

stansilaw
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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EE 143

MICROFABRICATION TECHNOLOGY

FALL 2014
C. Nguyen

PROBLEM SET #7
Issued: Tuesday, Oct. 14, 2014
Due: Friday, Oct. 24, 2014, 8:00 a.m. in the EE 143 homework box near 140 Cory

Electroplating
1. Suppose you want to fabricate MEMS clamped-clamped beam structures on a silicon
wafer by electroplating nickel through a photoresist mold similar to the process
discussed in the electroplating lecture. Assume the exposed area (which is not covered
by the photoresist mold) is 15 cm3, the applied current is regulated at a constant level
of 20 mA, and nickel cations in the electrolyte are Ni2+. Estimate the time required to
electroplate a 2-m thick nickel structural layer. (Ni has an atomic weight of
58.69 g/mol and a density of 8.9 g/cm3.)

Etching
2. The cross-section below is to be etched via reactive ion etching (RIE) of polysilicon.
Assume that the RIE is 100% anisotropic for all materials and that the RIE etches
polysilicon at a rate of 1 m/min with the selectivity of polysilicon:SiO2:photoresist =
5:1:1.

8 m

8 m

60 2 m

P.R.

2 m
1 m

2 m

Polysilicon
SiO2
Si3N4

Anchor

Si Substrate
(a) Draw cross-sections of the structure with dimension labeled after etching for (a) 1
min; (b) 2 min; and (c) 3 min.
(b) (Continuing from (a)) After etching for 3 minutes in part (a), the sample is then
dipped in a liquid HF solution to etch the SiO2 layer. Assuming the SiO2 etch rate
in HF is 2 m/min, draw the cross-section after etching in HF for 1 min. Estimate
the time needed to etch the entire SiO2 layer.

EE 143

MICROFABRICATION TECHNOLOGY

FALL 2014
C. Nguyen

3. Suppose in the polysilicon gate patterning lab the deposited polysilicon thickness is
= 400 nm with a 10% variation across the wafer and its etch rate in wet
polysilicon etchant, . . , has a 10% variation.
(a) What is the smallest percent overetch required to ensure that the polysilicon on the
field area is removed? (The percent were looking for is relative to the main etch
time given by /. . )
(b) Estimate the worst-case undercut distance of the polysilicon gate due to the main
etch and overetch calculated in (a). Assume that the photoresist has an infinite
selectivity against the polysilicon etchant.
(c) Continuing from (b), estimate the worst-case variation of the saturation drain
current ID(sat) due to the polysilicon undercut on a fabricated NMOS device with a
drawn gate length L = 4 m. Assume the lithography step perfectly patterns the
photoresist with the same dimensions as that drawn on the mask (i.e., L = 4 m).
1

(Recall that () = 2 ( )2 .)

Ion Implantation
4. Problem 5.3 and 5.8 in the textbook.

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