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hw2 Ee143 f14 Web

This document provides the details of Problem Set #2 for the course EE 143 Microfabrication Technology taught in Fall 2014. The problem set contains questions about (1) silicon doping and conductivity calculations for a device cross-section, and (2) process steps for fabricating a MEMS polysilicon cantilever beam including photolithography, etching, deposition, and sacrificial layer removal. Students are asked to calculate properties, identify required mask patterns, select appropriate etching and deposition techniques, and determine voltages to ensure proper device operation. The problem set is due on September 17, 2014.

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125 views2 pages

hw2 Ee143 f14 Web

This document provides the details of Problem Set #2 for the course EE 143 Microfabrication Technology taught in Fall 2014. The problem set contains questions about (1) silicon doping and conductivity calculations for a device cross-section, and (2) process steps for fabricating a MEMS polysilicon cantilever beam including photolithography, etching, deposition, and sacrificial layer removal. Students are asked to calculate properties, identify required mask patterns, select appropriate etching and deposition techniques, and determine voltages to ensure proper device operation. The problem set is due on September 17, 2014.

Uploaded by

stansilaw
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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EE 143

MICROFABRICATION TECHNOLOGY

FALL 2014
C. Nguyen

PROBLEM SET #2
Issued: Wednesday, Sep. 10, 2014
Due: Wednesday, Sep. 17, 2014, 8:00 a.m. in the EE 143 homework box near 140 Cory

I.

Silicon Doping/Conductivity

1. Consider the cross-section of a device shown below. The p-type substrate is initially
doped with boron at a concentration of 1015 atoms/cm3. The n-well region is then doped
with phosphorous at a concentration of 21015 atoms/cm3.
B

VB

Al

Al

Al

n+

p+

p+

SiO2

n-well

p-substrate

(a) What type of device can be obtained by accessing terminals A and B?


(b) Find the majority carrier concentration in the n-well at room temperature.
(c) Assume that the mobility values for electrons and holes in the n-well are 1200 cm2/Vs,
and 450 cm2/Vs, respectively. Calculate the electrical conductivity of the n-well.
(d) Here, the p-type Si substrate can be accessed via VB. To ensure a proper operation of
the device in (a), what voltage should be applied to VB, e.g., the highest or lowest in the
system? Why?

II.

Process Modules

2. Consider the following cross-section of a MEMS polysilicon cantilever beam.

PolySi Cantilever

Silicon Nitride
Si-Substrate

EE 143

MICROFABRICATION TECHNOLOGY

FALL 2014
C. Nguyen

(a) Suppose you are performing the photolithography step that defines the cantilever beam
structure. Draw the mask patterns required to achieve this goal in the figure below.

Light
Mask (?)
Positive P.R.
PolySi
SiO2
Silicon Nitride
Si-Substrate
(b) Continuing from (a), after the photolithography (i.e., exposure and then development),
the polysilicon is etched to yield the cross-section as shown below. What type of
etchant (i.e., dry, or wet) is used here? Justify your answer.

Positive P.R.
PolySi
SiO2
Silicon Nitride
Si-Substrate
(c) Continuing from (b), finally the photoresist is stripped and then the sacrificial oxide is
removed to release the cantilever. What chemical can be used to remove the oxide?
(d) Can the sacrificial oxide be substituted with silicon nitride? Why or why not?
(e) Suppose you need a thin film that conformally covers the suspended cantilever. What
deposition method would you choose to achieve this (i.e., sputtering, evaporation, or
high temperature LPCVD)? Why?

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