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    Pm100cva120 - e IGBT PDF

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    DoDuyBac
    This document provides specifications for the Mitsubishi PM100CVA120 insulated intelligent power module. Key features include 3-phase 100A 1200V IGBTs for 20kHz switching, integrated gate drive and protection circuits, and acoustic noise-less operation for 22kW inverters. The module has detection and protection circuits for overcurrent, short-circuit, over-temperature and under-voltage conditions. Dimensions and pinout diagrams are provided along with typical electrical characteristics, thermal and mechanical specifications, and recommended operating conditions.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Pm100cva120 - e IGBT PDF

    Uploaded by

    DoDuyBac
    209 views6 pages
    This document provides specifications for the Mitsubishi PM100CVA120 insulated intelligent power module. Key features include 3-phase 100A 1200V IGBTs for 20kHz switching, integrated gate drive and protection circuits, and acoustic noise-less operation for 22kW inverters. The module has detection and protection circuits for overcurrent, short-circuit, over-temperature and under-voltage conditions. Dimensions and pinout diagrams are provided along with typical electrical characteristics, thermal and mechanical specifications, and recommended operating conditions.

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    pm100cva120_e IGBT.pdf

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    This document provides specifications for the Mitsubishi PM100CVA120 insulated intelligent power module. Key features include 3-phase 100A 1200V IGBTs for 20kHz switching, integrated gate drive and protection circuits, and acoustic noise-less operation for 22kW inverters. The module has detection and protection circuits for overcurrent, short-circuit, over-temperature and under-voltage conditions. Dimensions and pinout diagrams are provided along with typical electrical characteristics, thermal and mechanical specifications, and recommended operating conditions.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    209 views6 pages

    Pm100cva120 - e IGBT PDF

    Uploaded by

    DoDuyBac
    This document provides specifications for the Mitsubishi PM100CVA120 insulated intelligent power module. Key features include 3-phase 100A 1200V IGBTs for 20kHz switching, integrated gate drive and protection circuits, and acoustic noise-less operation for 22kW inverters. The module has detection and protection circuits for overcurrent, short-circuit, over-temperature and under-voltage conditions. Dimensions and pinout diagrams are provided along with typical electrical characteristics, thermal and mechanical specifications, and recommended operating conditions.

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    MITSUBISHI

    MITSUBISHI
    <INTELLIGENT
    <INTELLIGENT
    POWER
    POWER
    MODULES>
    MODULES>

    PM100CVA120
    PM100CVA120
    FLAT-BASE
    FLAT-BASE
    TYPE
    TYPE
    INSULATED
    INSULATED
    PACKAGE
    PACKAGE

    PM100CVA120
    FEATURE
    3 100A, 1200V Current-sense IGBT for 20kHz switching
    Monolithic gate drive & protection logic
    Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage
    (P-FO available from upper leg devices)
    Acoustic noise-less 22kW class inverter application
    UL Recognized
    Yellow Card No. E80276(N)
    File No. E80271

    APPLICATION
    General purpose inverter, servo drives and other motor controls

    Dimensions in mm

    120
    105 0.25

    18.25
    14.1 0.25 14.1 0.25 14.1 0.25

    1 234

    102
    89.2 0.5
    87 0.25

    5678

    9 10 1112

    13 141516

    14.6 0.3

    85.2
    19.5

    22

    22

    24.1
    33.7
    34.7

    24.1 0.5
    21.6
    4

    +1.0

    12

    LABEL

    TERMINAL CODE
    1. WFO
    8. VVP1
    15. VNC
    2. VWPC
    9. UFO
    16. VN1
    3. WP
    10. VUPC 17. UN
    4. VWP1 11. UP
    18. VN
    5. VFO
    12. VUP1
    19. WN
    6. VVPC 13. NC
    14. FO
    7. VP

    2.54 0.25

    12.3

    17 18 19

    12

    5-M5NUTS

    43.57 0.3

    1.1 0.3

    45.5MOUNTING HOLES

    15.1

    7.5

    12.3

    7.5

    PACKAGE OUTLINES

    2.54 0.25
    2.54 0.25
    2.54 0.25
    3.49 0.25
    3.49 0.25
    4-3
    C0.7
    0.64
    A : DETAIL

    Jun. 2005

    MITSUBISHI <INTELLIGENT POWER MODULES>

    PM100CVA120
    FLAT-BASE TYPE
    INSULATED PACKAGE

    INTERNAL FUNCTIONS BLOCK DIAGRAM


    FO

    NC VNC WN

    VN1

    VN

    WP VWP1
    VP
    VVP1
    UP
    VUP1
    VWPC WFO
    VVPC VFO
    VUPC UFO

    UN

    Rfo
    Rfo

    GND FO
    In
    VCC

    Rfo

    Rfo

    GND FO
    In
    VCC

    GND

    FO
    VCC

    GND FO
    In
    VCC

    GND FO
    In
    VCC

    GND FO
    In
    VCC

    GND Si OUT

    GND Si OUT

    GND Si OUT

    GND Si OUT

    GND Si OUT

    In

    TEMP
    GND Si OUT
    Th

    Rfo=1.5k

    MAXIMUM RATINGS (Tj = 25C, unless otherwise noted)


    INVERTER PART
    Symbol
    VCES
    IC
    ICP
    PC
    Tj

    Parameter
    Collector-Emitter Voltage
    Collector Current
    Collector Current (Peak)
    Collector Dissipation
    Junction Temperature

    Condition
    VD = 15V, VCIN = 15V
    TC = 25C
    TC = 25C
    TC = 25C

    Ratings
    1200
    100
    200
    541
    20 ~ +150

    Unit
    V
    A
    A
    W
    C

    Ratings

    Unit

    20

    20

    20

    20

    mA

    CONTROL PART
    Symbol

    Parameter

    VD

    Supply Voltage

    VCIN

    Input Voltage

    VFO

    Fault Output Supply Voltage

    IFO

    Fault Output Current

    Condition
    Applied between : VUP1-VUPC
    VVP1-VVPC, VWP1-VWPC, VN1-VNC
    Applied between : UP-VUPC, VP-VVPC, WP-VWPC
    UN VN WN-VNC
    Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC
    FO-VNC
    Sink current at UFO, VFO, WFO and FO terminal

    Jun. 2005

    MITSUBISHI <INTELLIGENT POWER MODULES>

    PM100CVA120
    FLAT-BASE TYPE
    INSULATED PACKAGE
    TOTAL SYSTEM
    Parameter
    Supply Voltage Protected by
    VCC(PROT)
    SC

    Condition
    VD = 13.5 ~ 16.5V, Inverter Part,
    Tj = 125C Start

    VCC(surge) Supply Voltage (Surge)

    Applied between : P-N, Surge value or without


    switching

    Symbol

    Module Case Operating


    Temperature
    (Note-1)
    Storage Temperature
    Tstg
    Isolation Voltage
    Viso
    60Hz, Sinusoidal, Charged part to Base, AC 1 min.
    (Note-1) TC measurement point is below. (3mm depth at the center of the side of base plate)
    TC

    Ratings

    Unit

    800

    1000

    20 ~ +100

    40 ~ +125
    2500

    C
    Vrms

    Tc

    ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted)


    INVERTER PART
    Symbol
    VCE(sat)
    VEC
    ton
    trr
    tc(on)
    toff
    tc(off)
    ICES

    Test Condition

    Parameter
    Collector-Emitter
    Saturation Voltage
    FWDi Forward Voltage

    VD = 15V, IC = 100A
    VCIN = 0V
    IC = 100A, VD = 15V, VCIN = 15V

    Switching Time

    VD = 15V, VCIN = 0V15V


    VCC = 600V, IC = 100A
    Tj = 125C
    Inductive Load (upper and lower arm)

    Collector-Emitter
    Cutoff Current

    VCE = VCES, VCIN = 15V

    Tj = 25C
    Tj = 125C

    Tj = 25C
    Tj = 125C

    Min.

    0.4

    Limits
    Typ.
    2.65
    2.75
    2.50
    0.9
    0.2
    0.4
    2.4
    0.7

    Max.
    3.30
    3.35
    3.50
    2.3
    0.3
    1.0
    3.4
    1.2
    1
    10

    Min.

    1.2
    1.7
    145

    Limits
    Typ.
    40
    13
    1.5
    2.0

    Max.
    55
    18
    1.8
    2.3

    Unit
    V
    V

    mA

    CONTROL PART
    Symbol

    Parameter

    Test Condition
    VN1-VNC
    V*P1-V*PC

    ID

    Circuit Current

    VD = 15V, VCIN = 15V

    Vth(ON)
    Vth(OFF)
    SC

    Input ON Threshold Voltage


    Input OFF Threshold Voltage
    Short Circuit Trip Level
    Short Circuit Current Delay
    Time

    Applied between : UP-VUPC, VP-VVPC, WP-VWPC


    UN VN WN-VNC
    20 Tj 125C, VD = 15V

    toff(SC)
    OT
    OTr
    UV
    UVr
    IFO(H)
    IFO(L)
    tFO

    VD = 15V

    Over Temperature Protection

    Base-plate
    Temperature detection, VD = 15V

    Supply Circuit Under-Voltage


    Protection

    20 Tj 125C

    Fault Output Current

    VD = 15V, VFO = 15V

    (Note-2)

    Minimum Fault Output Pulse


    Width

    VD = 15V

    (Note-2)

    Trip level
    Reset level
    Trip level
    Reset level

    10

    Unit
    mA
    V
    A

    s
    C

    111

    11.5

    118
    100
    12.0
    12.5

    10

    125

    12.5

    0.01
    15

    1.0

    1.8

    V
    mA
    ms

    (Note-2) Fault output is given only when the internal SC, OT & UV protection.
    Fault output of OT protection operate by lower arm
    Fault output of OT, UV protection given pulse while over level.

    Jun. 2005

    MITSUBISHI <INTELLIGENT POWER MODULES>

    PM100CVA120
    FLAT-BASE TYPE
    INSULATED PACKAGE
    THERMAL RESISTANCES
    Symbol
    Rth(j-c)Q
    Rth(j-c)F
    Rth(c-f)

    Parameter
    Junction to case Thermal
    Resistances
    Contact Thermal Resistance

    Test Condition
    Inverter IGBT part (per 1/6 module)
    Inverter FWDi part (per 1/6 module)
    Case to fin, Thermal grease applied (per 1 module)

    Min.

    Limits
    Typ.

    Max.
    0.231
    0.35
    0.022

    Min.
    2.5
    2.5

    Limits
    Typ.
    3.0
    3.0
    730

    Max.
    3.5
    3.5

    Unit
    C/W

    MECHANICAL RATINGS AND CHARACTERISTICS


    Symbol

    Test Condition

    Parameter
    Mounting torque
    Mounting torque
    Weight

    Mounting part
    Main terminal

    screw : M5
    screw : M5

    Unit
    Nm
    Nm
    g

    RECOMMENDED CONDITIONS FOR USE


    Symbol
    VCC

    Parameter
    Supply Voltage

    VD

    Control Supply Voltage

    VCIN(ON)
    VCIN(OFF)

    Input ON Voltage
    Input OFF Voltage
    Arm Shoot-through
    Blocking Time

    tdead
    fPWM

    PWM Input Frequency

    Test Condition
    Applied across P-N terminals
    Applied between : VUP1-VUPC, VVP1-VVPC
    VWP1-VWPC, VN1-VNC
    (Note-3)
    Applied between : UP-VUPC, VP-VVPC, WP-VWPC
    UN VN WN-VNC

    Recommended value
    800

    Unit
    V

    15 1.5

    0.8
    4.0

    For IPMs each input signals

    3.0

    Using Application Circuit input signal of IPM, 3


    Sinusoidal PWM VVVF inverter

    20

    kHz

    (Note-3) With ripple satisfying the following conditions dv/dt swing 5V/s, Variation 2V peak to peak

    Jun. 2005

    MITSUBISHI <INTELLIGENT POWER MODULES>

    PM100CVA120
    FLAT-BASE TYPE
    INSULATED PACKAGE

    PERFORMANCE CURVES
    COLLECTOR-EMITTER SATURATION
    VOLTAGE CHARACTERISTICS
    (TYPICAL)

    OUTPUT CHARACTERISTICS
    (TYPICAL)

    VD = 17V
    13V

    80
    60
    40
    20
    0

    Tj = 25C
    Tj = 125C
    VD = 15V
    VCIN = 0V

    20

    40

    60

    80 100 120 140 160

    COLLECTOR-EMITTER VOLTAGE VCE (V)

    COLLECTOR CURRENT IC(A)

    COLLECTOR-EMITTER SATURATION
    VOLTAGE CHARACTERISTICS
    (TYPICAL)

    SWITCHING CHARACTERISTICS
    (TYPICAL)
    101

    Tj = 25C
    Tj = 125C
    5 IC = 100A
    VCIN = 0V

    Tj = 125C
    VCC = 600V
    VD = 15V
    Inductive load

    SWITCHING TIME (s)

    4
    3
    2
    1

    3
    2

    toff

    100

    ton

    7
    5

    tc(off)

    tc(on)

    0
    10

    12

    14

    16

    18

    101 1
    10

    20

    5 7 102

    5 7 103

    CONTROL SUPPLY VOLTAGE VD(V)

    COLLECTOR CURRENT IC (A)

    DIODE FORWARD CHARACTERISTICS


    (TYPICAL)

    DIODE REVERSE RECOVERY CHARACTERISTICS


    (TYPICAL)

    102
    7
    5
    3
    2

    101
    7
    5

    Tj = 25C
    Tj = 125C
    VD = 15V
    VCIN = 15V

    3
    2

    100

    0.5

    1.0

    1.5

    2.0

    2.5

    3.0

    EMITTER-COLLECTOR VOLTAGE VEC (V)

    102

    100

    lrr

    7
    5

    7
    5

    trr

    101

    101

    7
    5 VCC = 600V

    7
    5

    VD = 15V
    Inductive load

    Tj = 25C
    3
    Tj = 125C

    3
    2

    5 7 101

    5 7 102

    REVERS RECOVERY TIME trr (s)

    COLLECTOR-EMITTER
    SATURATION VOLTAGE VCE (sat) (V)

    15V

    100

    COLLECTOR RECOVERY CURRENT IC (A)

    COLLECTOR-EMITTER
    SATURATION VOLTAGE VCE (sat) (V)

    Tj = 25C
    120 VCIN = 0V

    REVERSE RECOVERY CURRENT lrr (A)

    COLLECTOR CURRENT IC (A)

    140

    COLLECTOR RECOVERY CURRENT IC (A)

    Jun. 2005

    MITSUBISHI <INTELLIGENT POWER MODULES>

    PM100CVA120
    FLAT-BASE TYPE
    INSULATED PACKAGE

    TRANSIENT THERMAL
    IMPEDANCE CHARACTERISTICS
    (IGBT per 1 element)

    TRANSIENT THERMAL
    IMPEDANCE CHARACTERISTICS
    (FWDi per 1 element)

    7 Single Pulse
    5
    3 Per unit base = Rth(j c)Q = 0.231C/ W
    2

    100

    7
    5
    3
    2

    101

    7
    5
    3
    2

    102

    7
    5
    3
    2

    103 3
    10 2 3 5 7102 2 3 5 7101 2 3 5 7 100 2 3 5 7 101
    TIME (s)

    101

    NORMALIZED TRANSIENT
    THERMAL IMPEDANCE Zth (j c)

    NORMALIZED TRANSIENT
    THERMAL IMPEDANCE Zth (j c)

    101

    7 Single Pulse
    5
    3 Per unit base = Rth(j c)F = 0.35C/ W
    2

    100

    7
    5
    3
    2

    101

    7
    5
    3
    2

    102

    7
    5
    3
    2

    103 3
    10 2 3 5 7102 2 3 5 7101 2 3 5 7 100 2 3 5 7 101
    TIME (s)

    Jun. 2005

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