****************************************************************************

***
Sentaurus Device
***
***
Version D-2010.03
***
***
(1.4, amd64, linux)
***
***
***
***
Copyright (C) 1994-2010
***
***
Synopsys, Inc.
***
***
***
*** This software and the associated documentation are confidential
***
*** and proprietary to Synopsys, Inc. Your use or disclosure of this ***
*** software is subject to the terms and conditions of a written
***
*** license agreement between you, or your company, and Synopsys, Inc. ***
****************************************************************************
Running on machine with the following configuration:
Host Name: ws5.minet.ae
Operating System: Linux rel. 2.6.18-194.32.1.el5 ver. #1 SMP Mon Dec 20
10:52:42 EST 2010
Machine Type: x86_64
Process ID: 18188
Number of processors: 12
Domain Name: (none)
Date: Wed Feb 1 11:46:37 2012 (GST)
Parsing "/opt/synopsys/tcad-sentaurus/x86_64/installed/tcad/current/lib/sdevice17.0.4/MaterialDB/Molefraction.txt"
Wed Feb 1 11:46:37 2012: checked out 1 Dessis license(s)
Wed Feb 1 11:46:37 2012: checked out 1 sdevice license(s)
Writing parameter file 'models.par...
Material = "Silicon" {
Epsilon
{ * Ratio of the permittivities of material and vacuum
* epsilon() = epsilon
epsilon = 11.7 # [1]
}
Epsilon_aniso
{ * Ratio of the permittivities of material and vacuum
* epsilon() = epsilon
epsilon = 11.7 # [1]
}
RefractiveIndex
{ * Optical Refractive Index
* refractiveindex() = refractiveindex * (1 + alpha * (T-Tpar))
Tpar
= 3.0000e+02
# [K]
refractiveindex = 3.45 # [1]
alpha = 2.0000e-04
# [1/K]
*
*
*
*

Gain dependence of refractive index in active region:

a) Linear model: delta n = a0 * ( (n+p)/2 - N0 )
b) Logarithmic model: delta n = a0 * log ( (n+p)/(2 * N0) )
where n/p are the carrier densities in the active region.
a0
= 0.0000e+00
# [cm^3 or 1]

N0

= 1.0000e+18

# [1/cm^3]

}
ComplexRefractiveIndex
{ * Complex refractive index model: n_complex = n + i*k (unitless)
*
* with n = n_0 + delta_n_lambda + delta_n_T + delta_n_carr + delta_n_gain
*
k = k_0 + delta_k_lambda
+ delta_k_carr
* Base refractive index and extinction coefficient:
*
n_0, k_0
n_0
= 3.45 # [1]
k_0
= 0.0000e+00
# [1]
* Wavelength dependence (real and imag):
*
Formula 0: delta_n_lambda = Cn_lambda * lambda + Dn_lambda * lambda^2
*
delta_k_lambda = Ck_lambda * lambda + Dk_lambda * lambda^2
*
Formula 1: Read tabulated values
*
NumericalTable (...)
*
Formula 2: Read tabulated values from file
*
NumericalTable = <string>
*
Formula 3: Read tabulated values from ODB Table
Formula = 3
Cn_lambda
= 0.0000e+00
# [um^-1]
Dn_lambda
= 0.0000e+00
# [um^-2]
Ck_lambda
= 0.0000e+00
# [um^-1]
Dk_lambda
= 0.0000e+00
# [um^-2]
NumericalTable (
0.1908
0.84
2.73;
0.1984
0.968 2.89;
0.2066
1.01
2.909;
0.2073
1.036 2.928;
0.208 1.046 2.944;
0.2087
1.066 2.937;
0.2094
1.07
2.963;
0.2101
1.083 2.982;
0.2109
1.088 2.987;
0.2116
1.102 3.005;
0.2123
1.109 3.015;
0.213 1.119 3.025;
0.2138
1.133 3.045;
0.2145
1.139 3.061;
0.2153
1.155 3.073;
0.216 1.164 3.086;
0.2168
1.175 3.102;
0.2175
1.18
3.112;
0.2183
1.195 3.135;
0.2191
1.211 3.15;
0.2198
1.222 3.169;
0.2206
1.235 3.19;
0.2214
1.247 3.206;
0.2222
1.265 3.228;
0.223 1.28
3.245;
0.2238
1.299 3.267;
0.2246
1.319 3.285;
0.2254
1.34
3.302;
0.2263
1.362 3.319;
0.2271
1.389 3.334;
0.2279
1.416 3.35;

0.2228
0.2296
0.2305
0.2313
0.2322
0.2311
0.2339
0.2348
0.2357
0.2366
0.2375
0.2384
0.2394
0.2403
0.2412
0.2422
0.2431
0.2441
0.245 1.569
0.246 1.568
0.247 1.569
0.248 1.57
0.249 1.575
0.25 1.58
0.251 1.584
0.252 1.591
0.253 1.597
0.2541
0.2551
0.2562
0.2572
0.2583
0.2594
0.2605
0.2616
0.2627
0.2638
0.2649
0.2661
0.2672
0.2684
0.2695
0.2707
0.2719
0.2731
0.2743
0.2755
0.2768
0.278 2.7
0.2792
0.2805
0.2818
0.2831
0.2844
0.2857
0.287 3.849
0.2883
0.2897
0.291 4.525
0.2924

1.445
1.471
1.502
1.526
1.548
1.566
1.579
1.585
1.59
1.591
1.592
1.589
1.586
1.582
1.579
1.573
1.571
1.57
3.477;
3.504;
3.533;
3.565;
3.598;
3.632;
3.67;
3.709;
3.749;
1.608
1.618
1.629
1.643
1.658
1.673
1.692
1.713
1.737
1.764
1.794
1.831
1.874
1.927
1.988
2.059
2.14
2.234
2.339
2.451
2.572
5.206;
2.833
2.974
3.12
3.277
3.444
3.634
5.439;
4.086
4.318
5.158;
4.686

3.359;
3.366;
3.368;
3.368;
3.364;
3.358;
3.353;
3.346;
3.344;
3.344;
3.347;
3.354;
3.363;
3.376;
3.389;
3.408;
3.429;
3.451;

3.789;
3.835;
3.88;
3.928;
3.979;
4.031;
4.088;
4.149;
4.211;
4.278;
4.35;
4.426;
4.506;
4.59;
4.678;
4.764;
4.849;
4.933;
5.011;
5.082;
5.148;
5.257;
5.304;
5.344;
5.381;
5.414;
5.435;
5.395;
5.301;
4.989;

0.2938
0.2952
0.2966
0.298 4.977
0.2995
0.3009
0.3024
0.3039
0.3054
0.3069
0.3084
0.31 5.01
0.3115
0.3131
0.3147
0.3163
0.3179
0.3195
0.3212
0.3229
0.3246
0.3263
0.328 5.079
0.3297
0.3315
0.3333
0.3351
0.3369
0.3388
0.3406
0.3425
0.3444
0.3463
0.3483
0.3502
0.3522
0.3542
0.3563
0.3583
0.3604
0.3625
0.3647
0.3668
0.369 6.796
0.3712
0.3734
0.3757
0.378 6.585
0.3803
0.3827
0.385 6.185
0.3875
0.3899
0.3924
0.3949
0.3974
0.4 5.57
0.4025
0.4052
0.4078

4.805
4.888
4.941
4.335;
4.999
5.012
5.02
5.021
5.02
5.018
5.015
3.587;
5.009
5.01
5.009
5.012
5.016
5.021
5.029
5.04
5.052
5.065
3.154;
5.095
5.115
5.134
5.156
5.179
5.204
5.231
5.261
5.296
5.336
5.383
5.442
5.515
5.61
5.733
5.894
6.089
6.308
6.522
6.695
2.169;
6.829
6.799
6.709
1.11;
6.452
6.316
0.714;
6.062
5.948
5.842
5.744
5.654
0.387;
5.493
5.42
5.349

4.812;
4.639;
4.48;
4.204;
4.086;
3.979;
3.885;
3.798;
3.72;
3.65;
3.529;
3.477;
3.429;
3.386;
3.346;
3.31;
3.275;
3.242;
3.211;
3.182;
3.128;
3.103;
3.079;
3.058;
3.039;
3.021;
3.007;
2.995;
2.987;
2.983;
2.984;
2.989;
2.999;
3.014;
3.026;
3.023;
2.982;
2.881;
2.705;
2.456;
1.87;
1.577;
1.321;
0.945;
0.815;
0.63;
0.561;
0.505;
0.456;
0.416;
0.355;
0.329;
0.313;

0.4105
0.4133
0.4161
0.4189
0.4217
0.4246
0.4275
0.4305
0.4335
0.4366
0.4397
0.4428
0.446 4.718
0.4492
0.4525
0.4558
0.4592
0.4626
0.4661
0.4696
0.4732
0.4769
0.4806
0.4843
0.4881
0.492 4.343
0.4959
0.4999
0.504 4.277
0.5081
0.5123
0.5166
0.5209
0.5254
0.5299
0.5344
0.5391
0.5438
0.5486
0.5535
0.5585
0.5636
0.5687
0.574 4.012
0.5794
0.5848
0.5904
0.5961
0.6019
0.6078
0.6138
0.6199
0.6262
0.6326
0.6391
0.6458
0.6526
0.6595
0.6666
0.6738

5.284
5.222
5.164
5.109
5.058
5.009
4.961
4.916
4.872
4.831
4.791
4.753
0.149;
4.682
4.648
4.615
4.583
4.553
4.522
4.495
4.466
4.442
4.416
4.391
4.367
0.077;
4.32
4.298
0.066;
4.255
4.235
4.215
4.196
4.177
4.159
4.14
4.123
4.106
4.089
4.073
4.057
4.042
4.026
0.03;
3.997
3.983
3.969
3.956
3.943
3.931
3.918
3.906
3.893
3.882
3.87
3.858
3.847
3.837
3.826
3.815

0.291;
0.269;
0.255;
0.244;
0.228;
0.211;
0.203;
0.194;
0.185;
0.185;
0.17;
0.163;
0.149;
0.133;
0.131;
0.13;
0.131;
0.134;
0.12;
0.12;
0.09;
0.094;
0.083;
0.079;
0.073;
0.073;
0.072;
0.06;
0.06;
0.056;
0.053;
0.043;
0.045;
0.048;
0.044;
0.044;
0.032;
0.038;
0.032;
0.034;
0.027;
0.03;
0.03;
0.027;
0.025;
0.025;
0.024;
0.022;
0.022;
0.019;
0.018;
0.017;
0.016;
0.016;
0.015;
0.014;

0.6812
0.6888
0.6965
0.7045
0.7126
0.7208
0.7293
0.738 3.745
0.7469
0.756 3.728
0.7653
0.7749
0.7847
0.7948
0.8051
0.8157
0.8266
0.83 3.662
0.84 3.656
0.85 3.65
0.86 3.644
0.87 3.638
0.88 3.632
0.89 3.626
0.9 3.62
0.91 3.614
0.92 3.608
0.93 3.602
0.94 3.597
0.95 3.592
0.96 3.587
0.97 3.582
0.98 3.578
0.99 3.574
1
3.57
1.01 3.566
1.02 3.563
1.03 3.56
1.04 3.557
1.05 3.554
1.06 3.551
1.07 3.548
1.08 3.546
1.09 3.544
1.1 3.541
1.11 3.539
1.12 3.537
1.13 3.534
1.14 3.532
1.15 3.53
1.16 3.528
1.17 3.526
1.18 3.524
1.19 3.522
1.2 3.52
1.21 3.528
1.22 3.516
1.23 3.515
1.24 3.513
1.25 3.511

3.805 0.013;
3.796 0.013;
3.787 0.013;
3.778 0.012;
3.768 0.011;
3.761 0.011;
3.752 0.01;
0.01;
3.736 9.0000e-03;
9.0000e-03;
3.721 8.0000e-03;
3.714 8.0000e-03;
3.705 7.0000e-03;
3.697 7.0000e-03;
3.688 6.0000e-03;
3.681 6.0000e-03;
3.673 5.0000e-03;
4.2734e-03;
3.9505e-03;
3.6188e-03;
3.2850e-03;
2.9908e-03;
2.6821e-03;
2.4293e-03;
2.1916e-03;
1.9697e-03;
1.7571e-03;
1.5541e-03;
1.3689e-03;
1.1869e-03;
1.0237e-03;
8.7997e-04;
7.4788e-04;
6.2395e-04;
5.0930e-04;
4.1071e-04;
3.2386e-04;
2.4753e-04;
1.8704e-04;
1.3620e-04;
9.3631e-05;
6.8118e-05;
5.3285e-05;
4.0768e-05;
3.0637e-05;
2.3849e-05;
1.7825e-05;
1.3488e-05;
9.0718e-06;
6.2230e-06;
3.8770e-06;
2.0483e-06;
6.1036e-07;
3.4091e-07;
2.1008e-07;
1.2518e-07;
7.9609e-08;
4.6004e-08;
2.3682e-08;
9.9472e-09;

1.26 3.51
1.27 3.508
1.28 3.507
1.29 3.506
1.3 3.504
1.31 3.503
1.32 3.501
1.33 3.5
1.34 3.498
1.35 3.497
1.36 3.496
1.37 3.495
1.38 3.493
1.39 3.492
1.4 3.491
1.41 3.49
1.42 3.489
1.43 3.488
1.44 3.487
1.45 3.486
10
3.42
10.001
10.002

3.6096e-09;
2.0213e-09;
1.2223e-09;
7.2885e-10;
4.6553e-10;
2.8147e-10;
1.6807e-10;
8.4670e-11;
3.7322e-11;
1.8263e-11;
1.0823e-11;
7.3044e-12;
4.9418e-12;
2.7653e-12;
2.2282e-12;
1.6831e-12;
9.6050e-13;
8.7623e-13;
4.8128e-13;
3.6924e-13;
1.0000e-13;
3.42
1.0000e-13;
3.42
1.0000e-13;

)
* Temperature dependence (real):
*
delta_n_T = n_0 * ( Cn_temp * (T-Tpar))
Cn_temp = 2.0000e-04
# [K^-1]
Tpar
= 3.0000e+02
# [K]
* Carrier dependence (real)
*
delta_n_carr = - Cn_carr * (const.) * (n/m_e + p/m_h)
Cn_carr = 1
# [1]
* Carrier dependence (imag)
*
delta_k_carr = wavelength / (4*PI) * (Ck_carr_n*n + Ck_carr_p*p)
Ck_carr = 0.0000e+00 , 0.0000e+00
# [cm^2]
* Gain dependence (real)
*
lin: delta_n_gain = Cn_gain * ( (n+p)/2 - Npar )
*
log: delta_n_gain = Cn_gain * log ( (n+p)/(2 - Npar ) )
Cn_gain = 0.0000e+00
# [cm^3]
Npar
= 1.0000e+18
# [cm^-3]
}
SpectralConversion
{ * Spectral Conversion Model
* No default model, user has to define.
* All wavelength parameters should be in nanometers.
* Choice of Analytic or NumericalTable selected in Physics section of region
*
* ConversionEfficiency = float
* ratio of absorbed photons that are reemit
ted.
* AbsorptionScaling = float
* scale absorption
* EmissionScaling = float
* scale emission
* Analytic (
* AbsorptionProfile = (
*
Gaussian(lambda0 sigma peakvalue dc_offset lambda_range0 lambda_range1)
*
Lorentzian(lambda0 width peakvalue dc_offset lambda_range0 lambda_range

1)
*
*
*
*
*

...
)
EmissionProfile = (
Gaussian(lambda0 sigma peakvalue dc_offset lambda_range0 lambda_range1)
Lorentzian(lambda0 width peakvalue dc_offset lambda_range0 lambda_range

1)
*
...
* )
* )
* NumericalTable (
* AbsorptionProfile = (
*
lambda0 value0
*
lambda1 value1
*
...
* )
* EmissionProfile = (
*
lambda0 value0
*
lambda1 value1
*
...
* )
ConversionEfficiency = 1.0
}
LatticeHeatCapacity
{ * lumped electron-hole-lattice heat capacity
* cv() = cv + cv_b * T + cv_c
cv
= 1.63 # [J/(K
cv_b
= 0.0000e+00
cv_c
= 0.0000e+00
cv_d
= 0.0000e+00

* T^2 + cv_d * T^3

cm^3)]
# [J/(K^2 cm^3)]
# [J/(K^3 cm^3)]
# [J/(K^4 cm^3)]

}
Kappa
{ * Lattice thermal conductivity
* Formula = 0:
* kappa() = 1 / ( 1/kappa + 1/kappa_b * T + 1/kappa_c * T^2 )
1/kappa = 0.03 # [K cm/W]
1/kappa_b
= 1.5600e-03
# [cm/W]
1/kappa_c
= 1.6500e-06
# [cm/(W K)]
}
Kappa_aniso
{ * Lattice thermal conductivity
* Formula = 0:
* kappa() = 1 / ( 1/kappa + 1/kappa_b * T + 1/kappa_c * T^2 )
1/kappa = 0.03 # [K cm/W]
1/kappa_b
= 1.5600e-03
# [cm/W]
1/kappa_c
= 1.6500e-06
# [cm/(W K)]
}
EnergyRelaxationTime
{ * Energy relaxation times in picoseconds

tau_w_ele
tau_w_hol
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*

= 0.3 # [ps]
= 0.25 # [ps]

Below is the example of energy relaxation time approximation

by the ratio of two irrational polynomials.
If Wmax(interval-1) < Wc < Wmax(interval), then:
tau_w = (tau_w)*(Numerator^Gn)/(Denominator^Gd),
where (Numerator or Denominator)=SIGMA[A(i)(Wc^P(i))],
Wc=1.5(k*Tcar)/q (in eV).
By default: Wmin(0)=Wmax(-1)=0; Wmax(0)=infinity.
The option can be activated by specifying appropriate Formula equal to 2.
Formula(tau_w_ele) = 2
Formula(tau_w_hol) = 2
Wmax(interval)_ele =
tau_w_ele(interval)
=
Numerator(interval)_ele{
A(0) =
P(0) =
A(1) =
P(1) =
G
=
}
Denominator(interval)_ele{
A(0) =
P(0) =
G
=
}

* Note: Energy relaxation times can be either molefraction dependent

*
or energy dependent, but not both!
*
*

Wmax(interval)_hol =
tau_w_hol(interval)

}
EnergyFlux
{ * Coefficient in front of the energy flux equation
* energy_flux_coef=0.6 corresponds to Stratton model
energy_flux_coef_ele
= 0.6 # [1]
energy_flux_coef_hol
= 0.6 # [1]
}
ThermalDiffusion
{ * Thermal diffusion factor,
* Carrier diffusion factor,
rad(N)
td_n
= 0.0000e+00
td_p
= 0.0000e+00
td_gn = 1
# [1]
td_gp = 1
# [1]
}

td: td*mu*kB*N*grad(T), td=0 for Stratton model

td_g: mu*kB*(td_g*Tcarrier + (1-td_g)*Tlattice)*g
# [1]
# [1]

HeatFlux
{ * Heat flux diffusion factor, hf: hf*mu*(kB^2/q)*N*T*grad(T)
hf_n
= 1
# [1]
hf_p
= 1
# [1]
* Coefficients can be defined also as:
*
hf_new = hf*(1.+Delta(w))

*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*

where Delta(w) is the ratio of two irrational polynomials.

If Wmax(interval-1) < Wc < Wmax(interval), then:
Delta(w) = factor*(Numerator^Gn)/(Denominator^Gd),
where (Numerator or Denominator)=SIGMA[A(i)(w^P(i))], w=Tc/Tl
By default: Wmin(0)=Wmax(-1)=0; Wmax(0)=infinity.
Option can be activated by specifying nonzero 'factor'.

*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*

Alternatively, the function Delta(w) can also be

specified as a spline function, for example:

Wmax(interval)_ele =
F(interval)_ele
= 1
Numerator(interval)_ele{
A(0) =
P(0) =
A(1) =
P(1) =
G
=
}
Denominator(interval)_ele{
A(0) =
P(0) =
G
=
}
Wmax(interval)_hol =
F(interval)_hol
= 1

Spline (electron) {
0 1
1 1
2 0.8
4 0.6
10 0.5
}
Spline (hole) {
0 1
1 1.1
2 0.9
4 0.8
10 0.75
}
The given data points are interpolated by a cubic spline. Zero
derivatives are imposed as boundary conditions at the end points.
The spline function remains constant beyond the end points.

}
AvalancheFactors
{ * Coefficientss for avalanche generation with hydro
* Factors n_l_f, p_l_f for energy relaxation length in the expressions
* for effective electric field for avalanche generation
* eEeff = eEeff / n_l_f ( or b = b*n_l_f )
* hEeff = hEeff / p_l_f ( or b = b*p_l_f )
* Additional coefficients n_gamma, p_gamma, n_delta, p_delta
n_l_f = 1
# [1]
p_l_f = 1
# [1]
n_gamma = 1
# [1]
p_gamma = 1
# [1]

n_delta = 1.5
p_delta = 1.5

# [1]
# [1]

s_n
s_p
scale_n
scale_p

#
#
#
#

}
TEPower
{
=
=
=
=

1
1
1
1

[1]
[1]
[1]
[1]

}
Ionization
{
E_As_0
= 0.054 # [eV]
alpha_As
= 3.1000e-08
# [eV cm]
g_As
= 2
# [1]
Xsec_As = 1.0000e-12
# [cm^2/sec]
E_P_0
alpha_P
g_P
Xsec_P

=
=
=
=

0.045 # [eV]
3.1000e-08
# [eV cm]
2
# [1]
1.0000e-12
# [cm^2/sec]

E_Sb_0
alpha_Sb
g_Sb
Xsec_Sb

=
=
=
=

0.039 # [eV]
3.1000e-08
# [eV cm]
2
# [1]
1.0000e-12
# [cm^2/sec]

E_B_0
alpha_B
g_B
Xsec_B

=
=
=
=

0.045 # [eV]
3.1000e-08
# [eV cm]
4
# [1]
1.0000e-12
# [cm^2/sec]

E_In_0
alpha_In
g_In
Xsec_In

=
=
=
=

0.16 # [eV]
3.1000e-08
# [eV cm]
4
# [1]
1.0000e-12
# [cm^2/sec]

E_N_0 = 0.045 # [eV]

alpha_N
= 3.1000e-08
# [eV cm]
g_N
= 2
# [1]
Xsec_N = 1.0000e-12
# [cm^2/sec]

E_NDopant_0
alpha_NDopant
g_NDopant
Xsec_NDopant

=
=
=
=

0.045 # [eV]
3.1000e-08
# [eV cm]
2
# [1]
1.0000e-12
# [cm^2/sec]

E_PDopant_0
alpha_PDopant
g_PDopant
Xsec_PDopant

=
=
=
=

0.045 # [eV]
3.1000e-08
# [eV cm]
4
# [1]
1.0000e-12
# [cm^2/sec]

NdCrit
NaCrit

= 1.0000e+22
= 1.0000e+22

# [cm-3]
# [cm-3]

Bandgap
{ * Eg = Eg0 + dEg0 + alpha Tpar^2 / (beta + Tpar) - alpha T^2 / (beta + T)
* dEg0(<bgn_model_name>) is a band gap correction term. It is used together w
ith
* an appropriate BGN model, if this BGN model is chosen in Physics section
* Parameter 'Tpar' specifies the value of lattice
* temperature, at which parameters below are defined
* Chi0 is electron affinity.
Chi0
= 4.05 # [eV]
Bgn2Chi = 0.5 # [1]
Eg0
= 1.16964
# [eV]
dEg0(Bennett) = 0.0000e+00
# [eV]
dEg0(Slotboom) = -4.7950e-03 # [eV]
dEg0(OldSlotboom)
= -1.5950e-02 # [eV]
dEg0(delAlamo) = -1.4070e-02 # [eV]
alpha = 4.7300e-04
# [eV K^-1]
beta
= 6.3600e+02
# [K]
Tpar
= 0.0000e+00
# [K]
}
OldSlotboom
{ * deltaEg = dEg0 + Ebgn ( ln(N/Nref) + [ (ln(N/Nref))^2 + 0.5]^1/2 )
* dEg0 is defined in BandGap section
Ebgn
= 9.0000e-03
# [eV]
Nref
= 1.0000e+17
# [cm^(-3)]
}
Slotboom
{ * deltaEg = dEg0 + Ebgn ( ln(N/Nref) + [ (ln(N/Nref))^2 + 0.5]^1/2 )
* dEg0 is defined in BandGap section
Ebgn
= 6.9200e-03
# [eV]
Nref
= 1.3000e+17
# [cm^(-3)]
}
delAlamo
{ * deltaEg = dEg0 + Ebgn ln(N/Nref)
* dEg0 is defined in BandGap section
Ebgn
= 0.0187
# [eV]
Nref
= 7.0000e+17
# [cm^(-3)]
}
Bennett
{ * deltaEg = dEg0 + Ebgn (ln(N/Nref))^2
* dEg0 is defined in BandGap section
Ebgn
= 6.8400e-03
# [eV]
Nref
= 3.1620e+18
# [cm^(-3)]
}
JainRoulston
{ * deltaEg = A_i N^(1/3) + B_i N^(1/4) + C_i N^(1/2) + D_i N^(1/2)
* where i is n for n-type or p for p-type
A_n
= 1.0200e-08
# [eV cm]
A_p
= 1.1100e-08
# [eV cm]
B_n
= 4.1500e-07
# [eV cm^(3/4)]
B_p
= 4.7900e-07
# [eV cm^(3/4)]
C_n
= 1.4500e-12
# [eV cm^(3/2)]
C_p
= 3.2300e-12
# [eV cm^(3/2)]
D_n
= 1.4800e-12
# [eV cm^(3/2)]

D_p

= 1.8100e-12

# [eV cm^(3/2)]

}
FreeCarrierAbsorption
{
* Coefficients for free carrier absorption:
* fcaalpha_n for electrons,
* fcaalpha_p for holes
* FCA = (alpha_n * n + alpha_p * p) * Light Intensity
fcaalpha_n
= 4.0000e-18
# [cm^2]
fcaalpha_p
= 8.0000e-18
# [cm^2]
}
QWStrain
{
* Zincblende crystals:
* Parameters: a_nu, a_c, b, C_12, C_11
* StrainConstant eps (formula = 1) or lattice constant
* a0 (formula = 2) for energy shift of quantum-well
* subbands.
* a0(T) = a0 + alpha (T-Tpar)
* Wurtzite crystals:
* Parameters: a_c, D1, D2, D3, D4, C_13, C_33
* Lattice constants a0 and c0 (formula 2 must be used)
* a0(T) = a0 + alpha (T-Tpar)
* c0(T) = c0 + alpha (T-Tpar)
* Default formula
eps
= 0.0000e+00
a0
= 3.1890e-10
alpha = 0.0000e+00
Tpar
= 3.0000e+02
a_nu
= 0.19 # [eV]
a_c
= -4.0800e+00
b_shear = 0.9163
c_11
= 11.879
c_12
= 5.376 # [1e-2
d1
= -8.9000e-01
d2
= 4.27 # [eV]
d3
= 5.18 # [eV]
d4
= -2.5900e+00
c_13
= 1
# [1e-2
c_33
= 3.92 # [1e-2
c0
= 5.1850e-10

=
#
#
#
#

1
# [1]
[1]
[cm]
[cm/K]
[K]

# [eV]
# [eV]
# [1e-2 GPa]
GPa]
# [eV]
# [eV]
GPa]
GPa]
# [cm]

}
eDOSMass
{
* For effective mass specificatition Formula1 (me approximation):
* or Formula2 (Nc300) can be used :
Formula = 1
# [1]
* Formula1:
* me/m0 = [ (6 * mt)^2 * ml ]^(1/3) + mm
* mt = a[Eg(0)/Eg(T)]
* Nc(T) = 2(2pi*kB/h_Planck^2*me*T)^3/2 = 2.540e19 ((me/m0)*(T/300))^3/2
a
= 0.1905
# [1]
ml
= 0.9163
# [1]
mm
= 0.0000e+00
# [1]

}
hDOSMass
{
* For effective mass specificatition Formula1 (mh approximation):
* or Formula2 (Nv300) can be used :
Formula = 1
# [1]
* Formula1:
* mh = m0*{[(a+bT+cT^2+dT^3+eT^4)/(1+fT+gT^2+hT^3+iT^4)]^(2/3) + mm}
* Nv(T) = 2(2pi*kB/h_Planck^2*mh*T)^3/2 = 2.540e19 ((mh/m0)*(T/300))^3/2
a
= 0.443587
# [1]
b
= 0.003609528 # [K^-1]
c
= 0.0001173515 # [K^-2]
d
= 1.263218e-06 # [K^-3]
e
= 3.025581e-09 # [K^-4]
f
= 0.004683382 # [K^-1]
g
= 0.0002286895 # [K^-2]
h
= 7.469271e-07 # [K^-3]
i
= 1.727481e-09 # [K^-4]
mm
= 0
# [1]
}
SchroedingerParameters:
{ * For the hole masses for Schroedinger equation you can
* use different formulas.
* 0: use the isotropic density of states effective mass
* 1: (for materials with Si-like hole band structure)
*
m(k)/m0=1/(A+-sqrt(B+C*((xy)^2+(yz)^2+(zx)^2)))
*
where k=(x,y,z) is unit normal vector in reziprocal
*
space. '+' for light hole band, '-' for heavy hole band
* 2: Heavy hole mass mh and light hole mass ml are
*
specified explicitly.
*
Use me as electron mass for free-carrier effect in
*
the refractive index model.
* For electron masses, the following formula options exist:
* 0: use the isotropic density of states effective mass
* 1: (for materials with Si-like hole band structure)
*
use the a, ml, and mm parameters from eDOSMass.
*
Typically, this leads to anisotropy.
* formula<0 means no default model and no default parameters
* are available, so you have to provide values for
* 'formula' and the respective parameters in order to use
* this parameter set.
formula = 1 , 1
# [1]
* Formula(hole) 1 parameters:
A
= 4.22 # [1]
B
= 0.6084
# [1]
C
= 23.058
# [1]
* Lifting of degeneracy of bulk valleys. The value for
* electrons is added to the band edge for the subband
* ladder of lower degeneracy if positive, and subtracted
* from the band edge for the ladder of higher degeneracy
* if negative. (that is, the value of the band edge is
* always increased). For holes, the value is subtracted from
* the band edge for the heavy hole band is positive,
* add added tp that of the light hole band if
* negative. The signs are such that the shift always
* moves the band edges 'outward', away from midgap. The
* gap itself is defined as the separation of the
* unshifted band edges and remains unaffected.

*
*
*
*
*
*
*
*

offset = 0.0000e+00 , 0.0000e+00

# [eV]
Alternative to the specification of formula, offset,
and masses, you can make an arbitrary number of ladder
specification, 'eLadder(mz, mxy, deg, dE) and hLadder(...)
Here, mz is the quantization mass, mxy an in-plane DOS mass,
deg the ladder degeneracy, and dE an shift of the band edge
for the ladder (non-negative; the shift is always outward,
away from midgap). When present, we solve the Schroedinger
equation separately for each ladder

* Temperatures in rescaling of the mxy for eLadder and hLadder

ShiftTemperature
= 1.0000e+10 , 1.0000e+10
# [K]
}
QuantumPotentialParameters
{ * gamma: weighting factor for quantum potential
* theta: weight for quadratic term
* xi:
weight for quasi Fermi potential
* eta:
weight for electrostatic potential
* nu :
weight for DOS mass change from stress
gamma = 3.6 , 5.6
# [1]
theta = 0.5 , 0.5
# [1]
xi
= 1 , 1
# [1]
eta
= 1 , 1
# [1]
nu
= 0.0000e+00 , 0.0000e+00
# [1]
}
ConstantMobility:
{ * mu_const = mumax (T/T0)^(-Exponent)
mumax = 1.4170e+03 , 4.7050e+02
Exponent
= 2.5 , 2.2
# [1]
mutunnel
= 0.05 ,
0.05
}

# [cm^2/(Vs)]

ConstantMobility_aniso:
{ * mu_const = mumax (T/T0)^(-Exponent)
mumax = 1.4170e+03 , 4.7050e+02
Exponent
= 2.5 , 2.2
# [1]
mutunnel
= 0.05 ,
0.05
}

# [cm^2/(Vs)]

# [cm^2/(Vs)]

# [cm^2/(Vs)]

DopingDependence:
{
* For doping dependent mobility model three formulas
* can be used. Formula1 is based on Masetti et al. approximation.
* Formula2 uses approximation, suggested by Arora.
formula = 1 , 1
# [1]
* If formula=1, model suggested by Masetti et al. is used:
* mu_dop = mumin1 exp(-Pc/N) + (mu_const - mumin2)/(1+(N/Cr)^alpha)
*
- mu1/(1+(Cs/N)^beta)
* with mu_const from ConstantMobility
mumin1 = 52.2 ,
44.9
# [cm^2/Vs]
mumin2 = 52.2 ,
0.0000e+00
# [cm^2/Vs]
mu1
= 43.4 ,
29
# [cm^2/Vs]
Pc
= 0.0000e+00 , 9.2300e+16
# [cm^3]
Cr
= 9.6800e+16 , 2.2300e+17
# [cm^3]
Cs
= 3.4300e+20 , 6.1000e+20
# [cm^3]
alpha = 0.68 ,
0.719 # [1]
beta
= 2 , 2
# [1]
}

DopingDependence_aniso:
{
* For doping dependent mobility model three formulas
* can be used. Formula1 is based on Masetti et al. approximation.
* Formula2 uses approximation, suggested by Arora.
formula = 1 , 1
# [1]
* If formula=1, model suggested by Masetti et al. is used:
* mu_dop = mumin1 exp(-Pc/N) + (mu_const - mumin2)/(1+(N/Cr)^alpha)
*
- mu1/(1+(Cs/N)^beta)
* with mu_const from ConstantMobility
mumin1 = 52.2 ,
44.9
# [cm^2/Vs]
mumin2 = 52.2 ,
0.0000e+00
# [cm^2/Vs]
mu1
= 43.4 ,
29
# [cm^2/Vs]
Pc
= 0.0000e+00 , 9.2300e+16
# [cm^3]
Cr
= 9.6800e+16 , 2.2300e+17
# [cm^3]
Cs
= 3.4300e+20 , 6.1000e+20
# [cm^3]
alpha = 0.68 ,
0.719 # [1]
beta
= 2 , 2
# [1]
}
PhuMob:
{ * Philips Unified Mobility Model:
mumax_As
= 1.4170e+03
# [cm^2/Vs]
mumin_As
= 52.2 # [cm^2/Vs]
theta_As
= 2.285 # [1]
n_ref_As
= 9.6800e+16
# [cm^(-3)]
alpha_As
= 0.68 # [1]
mumax_P
= 1.4140e+03
# [cm^2/Vs]
mumin_P
= 68.5 # [cm^2/Vs]
theta_P
= 2.285 # [1]
n_ref_P
= 9.2000e+16
# [cm^(-3)]
alpha_P
= 0.711 # [1]
mumax_B
= 4.7050e+02
# [cm^2/Vs]
mumin_B
= 44.9 # [cm^2/Vs]
theta_B
= 2.247 # [1]
n_ref_B
= 2.2300e+17
# [cm^(-3)]
alpha_B
= 0.719 # [1]
nref_D
= 4.0000e+20
# [cm^(-3)]
nref_A
= 7.2000e+20
# [cm^(-3)]
cref_D
= 0.21 # [1]
cref_A
= 0.5 # [1]
me_over_m0
= 1
# [1]
mh_over_m0
= 1.258 # [1]
f_CW
= 2.459 # [1]
f_BH
= 3.828 # [1]
f_e
= 1
# [1]
f_h
= 1
# [1]
alpha1_g_k
= -7.2169e-01 # [1]
alpha1_g_m
= -1.5952e+00 # [1]
}
EnormalDependence
{ * mu_Enorm^(-1) = mu_ac^(-1) + mu_sr^(-1) with:
* mu_ac = B / Enorm + C (T/T0)^(-k) (N/N0)^lambda / Enorm^(1/3)
* mu_sr^-1 = Enorm^(A+alpha*n/(N+N1)^nu) / delta + Enorm^3 / eta
* EnormalDependence is added with factor exp(-l/l_crit), where l is
* the distance to the nearest point of semiconductor/insulator interface.
* Factor is equal to 1 if l_crit > 100.
B
= 4.7500e+07 , 9.9250e+06
# [cm/s]

C
N0
lambda
k
delta
A
alpha
aother
N1
nu
eta
l_crit

=
=
=
=
=
=
=
=
=
=
=
=

5.8000e+02
1 , 1
0.125 ,
1 , 1
5.8200e+14
2 , 2
0.0000e+00
0.0000e+00
1 , 1
1 , 1
5.8200e+30
1.0000e-06

, 2.9470e+03
# [cm^(-3)]
0.0317 # [1]
# [1]
, 2.0546e+14
# [1]
, 0.0000e+00
, 0.0000e+00
# [cm^(-3)]
# [1]
, 2.0546e+30
, 1.0000e-06

# [cm^(5/3)/(V^(2/3)s)]

# [V/s]
# [1]
# [1]
# [V^2/cm*s]
# [cm]

}
EnormalDependence_aniso
{ * mu_Enorm^(-1) = mu_ac^(-1) + mu_sr^(-1) with:
* mu_ac = B / Enorm + C (T/T0)^(-k) (N/N0)^lambda / Enorm^(1/3)
* mu_sr^-1 = Enorm^(A+alpha*n/(N+N1)^nu) / delta + Enorm^3 / eta
* EnormalDependence is added with factor exp(-l/l_crit), where l is
* the distance to the nearest point of semiconductor/insulator interface.
* Factor is equal to 1 if l_crit > 100.
B
= 4.7500e+07 , 9.9250e+06
# [cm/s]
C
= 5.8000e+02 , 2.9470e+03
# [cm^(5/3)/(V^(2/3)s)]
N0
= 1 , 1
# [cm^(-3)]
lambda = 0.125 ,
0.0317 # [1]
k
= 1 , 1
# [1]
delta = 5.8200e+14 , 2.0546e+14
# [V/s]
A
= 2 , 2
# [1]
alpha = 0.0000e+00 , 0.0000e+00
# [1]
aother = 0.0000e+00 , 0.0000e+00
# [1]
N1
= 1 , 1
# [cm^(-3)]
nu
= 1 , 1
# [1]
eta
= 5.8200e+30 , 2.0546e+30
# [V^2/cm*s]
l_crit = 1.0000e-06 , 1.0000e-06
# [cm]
}
EnormalDependence "100"
{ * mu_Enorm^(-1) = mu_ac^(-1) + mu_sr^(-1) with:
* mu_ac = B / Enorm + C (T/T0)^(-k) (N/N0)^lambda / Enorm^(1/3)
* mu_sr^-1 = Enorm^(A+alpha*n/(N+N1)^nu) / delta + Enorm^3 / eta
* EnormalDependence is added with factor exp(-l/l_crit), where l is
* the distance to the nearest point of semiconductor/insulator interface.
* Factor is equal to 1 if l_crit > 100.
B
= 4.7500e+07 , 9.9250e+06
# [cm/s]
C
= 5.8000e+02 , 2.9470e+03
# [cm^(5/3)/(V^(2/3)s)]
N0
= 1 , 1
# [cm^(-3)]
lambda = 0.125 ,
0.0317 # [1]
k
= 1 , 1
# [1]
delta = 5.8200e+14 , 2.0546e+14
# [V/s]
A
= 2 , 2
# [1]
alpha = 0.0000e+00 , 0.0000e+00
# [1]
aother = 0.0000e+00 , 0.0000e+00
# [1]
N1
= 1 , 1
# [cm^(-3)]
nu
= 1 , 1
# [1]
eta
= 5.8200e+30 , 2.0546e+30
# [V^2/cm*s]
l_crit = 1.0000e-06 , 1.0000e-06
# [cm]
}
EnormalDependence_aniso "100"
{ * mu_Enorm^(-1) = mu_ac^(-1) + mu_sr^(-1) with:

*
*
*
*
*

mu_ac = B / Enorm + C (T/T0)^(-k) (N/N0)^lambda / Enorm^(1/3)

mu_sr^-1 = Enorm^(A+alpha*n/(N+N1)^nu) / delta + Enorm^3 / eta
EnormalDependence is added with factor exp(-l/l_crit), where l is
the distance to the nearest point of semiconductor/insulator interface.
Factor is equal to 1 if l_crit > 100.
B
= 4.7500e+07 , 9.9250e+06
# [cm/s]
C
= 5.8000e+02 , 2.9470e+03
# [cm^(5/3)/(V^(2/3)s)]
N0
= 1 , 1
# [cm^(-3)]
lambda = 0.125 ,
0.0317 # [1]
k
= 1 , 1
# [1]
delta = 5.8200e+14 , 2.0546e+14
# [V/s]
A
= 2 , 2
# [1]
alpha = 0.0000e+00 , 0.0000e+00
# [1]
aother = 0.0000e+00 , 0.0000e+00
# [1]
N1
= 1 , 1
# [cm^(-3)]
nu
= 1 , 1
# [1]
eta
= 5.8200e+30 , 2.0546e+30
# [V^2/cm*s]
l_crit = 1.0000e-06 , 1.0000e-06
# [cm]

}
EnormalDependence "110"
{ * mu_Enorm^(-1) = mu_ac^(-1) + mu_sr^(-1) with:
* mu_ac = B / Enorm + C (T/T0)^(-k) (N/N0)^lambda / Enorm^(1/3)
* mu_sr^-1 = Enorm^(A+alpha*n/(N+N1)^nu) / delta + Enorm^3 / eta
* EnormalDependence is added with factor exp(-l/l_crit), where l is
* the distance to the nearest point of semiconductor/insulator interface.
* Factor is equal to 1 if l_crit > 100.
B
= 4.7500e+07 , 9.9250e+06
# [cm/s]
C
= 5.8000e+02 , 2.9470e+03
# [cm^(5/3)/(V^(2/3)s)]
N0
= 1 , 1
# [cm^(-3)]
lambda = 0.125 ,
0.0317 # [1]
k
= 1 , 1
# [1]
delta = 5.8200e+14 , 2.0546e+14
# [V/s]
A
= 2 , 2
# [1]
alpha = 0.0000e+00 , 0.0000e+00
# [1]
aother = 0.0000e+00 , 0.0000e+00
# [1]
N1
= 1 , 1
# [cm^(-3)]
nu
= 1 , 1
# [1]
eta
= 5.8200e+30 , 2.0546e+30
# [V^2/cm*s]
l_crit = 1.0000e-06 , 1.0000e-06
# [cm]
}
EnormalDependence_aniso "110"
{ * mu_Enorm^(-1) = mu_ac^(-1) + mu_sr^(-1) with:
* mu_ac = B / Enorm + C (T/T0)^(-k) (N/N0)^lambda / Enorm^(1/3)
* mu_sr^-1 = Enorm^(A+alpha*n/(N+N1)^nu) / delta + Enorm^3 / eta
* EnormalDependence is added with factor exp(-l/l_crit), where l is
* the distance to the nearest point of semiconductor/insulator interface.
* Factor is equal to 1 if l_crit > 100.
B
= 4.7500e+07 , 9.9250e+06
# [cm/s]
C
= 5.8000e+02 , 2.9470e+03
# [cm^(5/3)/(V^(2/3)s)]
N0
= 1 , 1
# [cm^(-3)]
lambda = 0.125 ,
0.0317 # [1]
k
= 1 , 1
# [1]
delta = 5.8200e+14 , 2.0546e+14
# [V/s]
A
= 2 , 2
# [1]
alpha = 0.0000e+00 , 0.0000e+00
# [1]
aother = 0.0000e+00 , 0.0000e+00
# [1]
N1
= 1 , 1
# [cm^(-3)]
nu
= 1 , 1
# [1]

eta
= 5.8200e+30 , 2.0546e+30
l_crit = 1.0000e-06 , 1.0000e-06

# [V^2/cm*s]
# [cm]

}
EnormalDependence "111"
{ * mu_Enorm^(-1) = mu_ac^(-1) + mu_sr^(-1) with:
* mu_ac = B / Enorm + C (T/T0)^(-k) (N/N0)^lambda / Enorm^(1/3)
* mu_sr^-1 = Enorm^(A+alpha*n/(N+N1)^nu) / delta + Enorm^3 / eta
* EnormalDependence is added with factor exp(-l/l_crit), where l is
* the distance to the nearest point of semiconductor/insulator interface.
* Factor is equal to 1 if l_crit > 100.
B
= 4.7500e+07 , 9.9250e+06
# [cm/s]
C
= 5.8000e+02 , 2.9470e+03
# [cm^(5/3)/(V^(2/3)s)]
N0
= 1 , 1
# [cm^(-3)]
lambda = 0.125 ,
0.0317 # [1]
k
= 1 , 1
# [1]
delta = 5.8200e+14 , 2.0546e+14
# [V/s]
A
= 2 , 2
# [1]
alpha = 0.0000e+00 , 0.0000e+00
# [1]
aother = 0.0000e+00 , 0.0000e+00
# [1]
N1
= 1 , 1
# [cm^(-3)]
nu
= 1 , 1
# [1]
eta
= 5.8200e+30 , 2.0546e+30
# [V^2/cm*s]
l_crit = 1.0000e-06 , 1.0000e-06
# [cm]
}
EnormalDependence_aniso "111"
{ * mu_Enorm^(-1) = mu_ac^(-1) + mu_sr^(-1) with:
* mu_ac = B / Enorm + C (T/T0)^(-k) (N/N0)^lambda / Enorm^(1/3)
* mu_sr^-1 = Enorm^(A+alpha*n/(N+N1)^nu) / delta + Enorm^3 / eta
* EnormalDependence is added with factor exp(-l/l_crit), where l is
* the distance to the nearest point of semiconductor/insulator interface.
* Factor is equal to 1 if l_crit > 100.
B
= 4.7500e+07 , 9.9250e+06
# [cm/s]
C
= 5.8000e+02 , 2.9470e+03
# [cm^(5/3)/(V^(2/3)s)]
N0
= 1 , 1
# [cm^(-3)]
lambda = 0.125 ,
0.0317 # [1]
k
= 1 , 1
# [1]
delta = 5.8200e+14 , 2.0546e+14
# [V/s]
A
= 2 , 2
# [1]
alpha = 0.0000e+00 , 0.0000e+00
# [1]
aother = 0.0000e+00 , 0.0000e+00
# [1]
N1
= 1 , 1
# [cm^(-3)]
nu
= 1 , 1
# [1]
eta
= 5.8200e+30 , 2.0546e+30
# [V^2/cm*s]
l_crit = 1.0000e-06 , 1.0000e-06
# [cm]
}
ThinLayerMobility:
{ * Mobility model for thin layers with geometric
* quantization. See the manual for details.
beta
= 4 , 4
# [1]
zeta
= 2.88 ,
1.05
# [1]
p1
= 0.55 ,
0.0000e+00
# [1]
p2
= 4.0000e+02 , 0.66
# [1]
p3
= 1.44 ,
1
# [1]
mz1
= 0.916 ,
0.29
# [m0]
mz2
= 0.19 ,
0.25
# [m0]
wt01
= 3.0000e-06 , 0.0000e+00
# [um]
wt02
= 3.5000e-07 , 0.0000e+00
# [um]

muac01
muac02
mutf0
musp0
tsp0
ftf0
tmin

=
=
=
=
=
=
=

3.1500e+02
6.4 , 69
0.15 ,
1.1450e-08
1.0000e-04
6.2500e+03
2.0000e-03

, 30.2
# [cm^2/Vs]
# [cm^2/Vs]
0.28
# [cm^2/Vs]
, 1.6000e-10
# [cm^2/Vs]
, 1.0000e-04
# [um]
, 1.0000e+100
# [V/cm]
, 2.0000e-03
# [um]

}
ThinLayerMobility_aniso:
{ * Mobility model for thin layers with geometric
* quantization. See the manual for details.
beta
= 4 , 4
# [1]
zeta
= 2.88 ,
1.05
# [1]
p1
= 0.55 ,
0.0000e+00
# [1]
p2
= 4.0000e+02 , 0.66
# [1]
p3
= 1.44 ,
1
# [1]
mz1
= 0.916 ,
0.29
# [m0]
mz2
= 0.19 ,
0.25
# [m0]
wt01
= 3.0000e-06 , 0.0000e+00
# [um]
wt02
= 3.5000e-07 , 0.0000e+00
# [um]
muac01 = 3.1500e+02 , 30.2
# [cm^2/Vs]
muac02 = 6.4 , 69
# [cm^2/Vs]
mutf0 = 0.15 ,
0.28
# [cm^2/Vs]
musp0 = 1.1450e-08 , 1.6000e-10
# [cm^2/Vs]
tsp0
= 1.0000e-04 , 1.0000e-04
# [um]
ftf0
= 6.2500e+03 , 1.0000e+100
# [V/cm]
tmin
= 2.0000e-03 , 2.0000e-03
# [um]
}
NegInterfaceChargeMobility
{ *
*
mu1 * (T/300)^T_exp * [1 + c/(c_trans * (Nc/N0)^Nc_exp1)]^c_exp
* mu_ic = --------------------------------------------------------------*
[Nc/N0]^Nc_exp2 * D * f(En)
*
* Nc
= negative interface charge density
* N0
= 1e11/cm^2
* c
= n (for electrons) , p (for holes)
* f(En) = 1 - exp[-(En/E0)^En_exp]
* D
= exp[-dist/l_crit]
* dist = distance from interface
*
mu1
= 40 , 40
# [cm^2/Vs]
T_exp = 1 , 1
# [1]
c_trans = 1.0000e+18 , 1.0000e+18
# [cm^(-3)]
c_exp = 1.5 , 1.5
# [1]
Nc_exp1 = 1 , 1
# [1]
Nc_exp2 = 0.5 , 0.5
# [1]
l_crit = 1.0000e-06 , 1.0000e-06
# [cm]
E0
= 2.0000e+05 , 2.0000e+05
# [V/cm]
En_exp = 2 , 2
# [1]
}
NegInterfaceChargeMobility_aniso
{ *
*
mu1 * (T/300)^T_exp * [1 + c/(c_trans * (Nc/N0)^Nc_exp1)]^c_exp
* mu_ic = --------------------------------------------------------------*
[Nc/N0]^Nc_exp2 * D * f(En)
*

*
*
*
*
*
*
*

Nc
N0
c
f(En)
D
dist

=
=
=
=
=
=

negative interface charge density

1e11/cm^2
n (for electrons) , p (for holes)
1 - exp[-(En/E0)^En_exp]
exp[-dist/l_crit]
distance from interface

mu1
T_exp
c_trans
c_exp
Nc_exp1
Nc_exp2
l_crit
E0
En_exp

=
=
=
=
=
=
=
=
=

40 , 40
# [cm^2/Vs]
1 , 1
# [1]
1.0000e+18 , 1.0000e+18
1.5 , 1.5
# [1]
1 , 1
# [1]
0.5 , 0.5
# [1]
1.0000e-06 , 1.0000e-06
2.0000e+05 , 2.0000e+05
2 , 2
# [1]

# [cm^(-3)]

# [cm]
# [V/cm]

}
PosInterfaceChargeMobility
{ *
*
mu1 * (T/300)^T_exp * [1 + c/(c_trans * (Nc/N0)^Nc_exp1)]^c_exp
* mu_ic = --------------------------------------------------------------*
[Nc/N0]^Nc_exp2 * D * f(En)
*
* Nc
= positive interface charge density
* N0
= 1e11/cm^2
* c
= n (for electrons) , p (for holes)
* f(En) = 1 - exp[-(En/E0)^En_exp]
* D
= exp[-dist/l_crit]
* dist = distance from interface
*
mu1
= 40 , 40
# [cm^2/Vs]
T_exp = 1 , 1
# [1]
c_trans = 1.0000e+18 , 1.0000e+18
# [cm^(-3)]
c_exp = 1.5 , 1.5
# [1]
Nc_exp1 = 1 , 1
# [1]
Nc_exp2 = 0.5 , 0.5
# [1]
l_crit = 1.0000e-06 , 1.0000e-06
# [cm]
E0
= 2.0000e+05 , 2.0000e+05
# [V/cm]
En_exp = 2 , 2
# [1]
}
PosInterfaceChargeMobility_aniso
{ *
*
mu1 * (T/300)^T_exp * [1 + c/(c_trans * (Nc/N0)^Nc_exp1)]^c_exp
* mu_ic = --------------------------------------------------------------*
[Nc/N0]^Nc_exp2 * D * f(En)
*
* Nc
= positive interface charge density
* N0
= 1e11/cm^2
* c
= n (for electrons) , p (for holes)
* f(En) = 1 - exp[-(En/E0)^En_exp]
* D
= exp[-dist/l_crit]
* dist = distance from interface
*
mu1
= 40 , 40
# [cm^2/Vs]
T_exp = 1 , 1
# [1]
c_trans = 1.0000e+18 , 1.0000e+18
# [cm^(-3)]
c_exp = 1.5 , 1.5
# [1]
Nc_exp1 = 1 , 1
# [1]

Nc_exp2
l_crit
E0
En_exp

=
=
=
=

0.5 , 0.5
# [1]
1.0000e-06 , 1.0000e-06
2.0000e+05 , 2.0000e+05
2 , 2
# [1]

# [cm]
# [V/cm]

}
Coulomb2DMobility
{ *
*
mu1 * (T/300)^T_exp * [1 + c/(c_trans * (Nc/N0)^Nc_exp1)]^c_exp
* mu_ic = --------------------------------------------------------------*
[Nc/N0]^Nc_exp2 * D * f(En)
*
* Nc
= Na (for electrons), Nd (for holes)
* N0
= 1e18/cm^3
* c
= n (for electrons) , p (for holes)
* f(En) = 1 - exp[-(En/E0)^En_exp]
* D
= exp[-dist/l_crit]
* dist = distance from interface
*
mu1
= 40 , 40
# [cm^2/Vs]
T_exp = 1 , 1
# [1]
c_trans = 1.0000e+18 , 1.0000e+18
# [cm^(-3)]
c_exp = 1.5 , 1.5
# [1]
Nc_exp1 = 1 , 1
# [1]
Nc_exp2 = 0.5 , 0.5
# [1]
l_crit = 1.0000e-06 , 1.0000e-06
# [cm]
E0
= 2.0000e+05 , 2.0000e+05
# [V/cm]
En_exp = 2 , 2
# [1]
}
Coulomb2DMobility_aniso
{ *
*
mu1 * (T/300)^T_exp * [1 + c/(c_trans * (Nc/N0)^Nc_exp1)]^c_exp
* mu_ic = --------------------------------------------------------------*
[Nc/N0]^Nc_exp2 * D * f(En)
*
* Nc
= Na (for electrons), Nd (for holes)
* N0
= 1e18/cm^3
* c
= n (for electrons) , p (for holes)
* f(En) = 1 - exp[-(En/E0)^En_exp]
* D
= exp[-dist/l_crit]
* dist = distance from interface
*
mu1
= 40 , 40
# [cm^2/Vs]
T_exp = 1 , 1
# [1]
c_trans = 1.0000e+18 , 1.0000e+18
# [cm^(-3)]
c_exp = 1.5 , 1.5
# [1]
Nc_exp1 = 1 , 1
# [1]
Nc_exp2 = 0.5 , 0.5
# [1]
l_crit = 1.0000e-06 , 1.0000e-06
# [cm]
E0
= 2.0000e+05 , 2.0000e+05
# [V/cm]
En_exp = 2 , 2
# [1]
}
CarrierCarrierScattering
{ * with Conwell/Weisskopf screening:
* mu_cc = D (T/T0)^3/2 / sqrt(n p) [ln( 1 + F (T/T0)^2 (n p)^(-1/3))]^(-1)
D
= 1.0400e+21
# [(cmVs)^(-1)]
F
= 7.4520e+13
# [(cm)^(-2)]

* with Brooks/Herring screening:

* mu_cc = c1 (T/T0)^1.5 / ( sqrt(n,p) ( ln(1+eta) - eta / (1+eta) ) )
* with eta = c2(T/T0)^2/(n+p)
c1
= 1.5600e+21
# [(cmVs)^(-1)]
c2
= 7.6300e+19
# [cm^(-3)]
}
HighFieldDependence:
{ * Caughey-Thomas model:
* mu_highfield = ( (alpha+1)*mu_lowfield ) /
*
( alpha + ( 1 + ( (alpha+1)*mu_lowfield*E/vsat)^beta )^(1/beta) )
* beta = beta0 (T/T0)^betaexp.
beta0 = 1.109 ,
1.213 # [1]
betaexp = 0.66 ,
0.17
# [1]
alpha = 0.0000e+00 , 0.0000e+00
# [1]
* Smoothing parameter for HydroHighField Caughey-Thomas model:
* if Tl < Tc < (1+K_dT)*Tl, then smoothing between low field mobility
* and HydroHighField mobility is used.
K_dT
= 0.2 , 0.2
# [1]
* Transferred-Electron Effect:
* mu_highfield = (mu_lowfield+(vsat/E)*(E/E0_TrEf)^4)/(1+(E/E0_TrEf)^4)
E0_TrEf = 4.0000e+03 , 4.0000e+03
# [1]
Ksmooth_TrEf
= 1 , 1
# [1]
* For vsat either Formula1 or Formula2 can be used.
Vsat_Formula
= 1 , 1
# [1]
* Formula1 for saturation velocity:
*
vsat = vsat0 (T/T0)^(-Vsatexp)
* (Parameter Vsat_Formula has to be not equal to 2)
vsat0 = 1.0700e+07 , 8.3700e+06
# [1]
vsatexp = 0.87 ,
0.52
# [1]
}
HighFieldDependence_aniso:
{ * Caughey-Thomas model:
* mu_highfield = ( (alpha+1)*mu_lowfield ) /
*
( alpha + ( 1 + ( (alpha+1)*mu_lowfield*E/vsat)^beta )^(1/beta) )
* beta = beta0 (T/T0)^betaexp.
beta0 = 1.109 ,
1.213 # [1]
betaexp = 0.66 ,
0.17
# [1]
alpha = 0.0000e+00 , 0.0000e+00
# [1]
* Smoothing parameter for HydroHighField Caughey-Thomas model:
* if Tl < Tc < (1+K_dT)*Tl, then smoothing between low field mobility
* and HydroHighField mobility is used.
K_dT
= 0.2 , 0.2
# [1]
* Transferred-Electron Effect:
* mu_highfield = (mu_lowfield+(vsat/E)*(E/E0_TrEf)^4)/(1+(E/E0_TrEf)^4)
E0_TrEf = 4.0000e+03 , 4.0000e+03
# [1]
Ksmooth_TrEf
= 1 , 1
# [1]
* For vsat either Formula1 or Formula2 can be used.
Vsat_Formula
= 1 , 1
# [1]
* Formula1 for saturation velocity:
*
vsat = vsat0 (T/T0)^(-Vsatexp)
* (Parameter Vsat_Formula has to be not equal to 2)
vsat0 = 1.0700e+07 , 8.3700e+06
# [1]
vsatexp = 0.87 ,
0.52
# [1]
}

UniBoDopingDependence:
{
* Baccarani model (University of Bologna) is used:
* Constant mobility model is defined here as well:
* mu_const = mumax (T/T0)^(-Exponent+Exponent2*(T/T0))
* mu_dop = mu_0(Na,Nd,T/T0)
*
+ (mu_const - mu_0)/(1 + (Nd/Cr)^alpha + (Na/Cr2)^beta)
*
- mu_1(Na,Nd,T/T0)/(1+(Nd/Cs + Na/Cs2)^(-2))
* with mu_const from above
* mu_0 = (mumin1 (T/T0)^(-mumin1_exp) Nd + mumin2 (T/T0)^(-mumin2_exp)Na)/(Nd+
Na)
* mu_1 = (mu1 (T/T0)^(-mu1_exp) Nd + mu2 (T/T0)^(-mu2_exp) Na)/(Nd+Na)
* Cr=Cr (T/T0)^Cr_exp
* Cr2=Cr2 (T/T0)^Cr2_exp
* Cs=Cs (T/T0)^Cs_exp
mumax = 1.4410e+03 , 4.7050e+02
# [cm^2/(Vs)]
Exponent
= 2.45 ,
2.16
# [1]
Exponent2
= -1.1000e-01 , 0.0000e+00
# [1]
mumin1 = 55 , 90
# [cm^2/Vs]
mumin2 = 1.3200e+02 , 44
# [cm^2/Vs]
mumin1_exp
= 0.6 , 1.3
# [1]
mumin2_exp
= 1.3 , 0.7
# [1]
mu1
= 42.4 ,
28.2
# [cm^2/Vs]
mu2
= 73.5 ,
28.2
# [cm^2/Vs]
mu1_exp = 0.5 , 2
# [1]
mu2_exp = 1.25 ,
0.8
# [1]
Pc
= 0.0000e+00 , 0.0000e+00
# [cm^3]
Cr
= 8.9000e+16 , 1.3000e+18
# [cm^3]
Cr2
= 1.2200e+17 , 2.4500e+17
# [cm^3]
Cs
= 2.9000e+20 , 1.1000e+18
# [cm^3]
Cs2
= 7.0000e+20 , 6.1000e+20
# [cm^3]
Cr_exp = 3.65 ,
2.2
# [1]
Cr2_exp = 2.65 ,
3.1
# [1]
Cs_exp = 0.0000e+00 , 6.2
# [1]
alpha = 0.68 ,
0.77
# [1]
beta
= 0.72 ,
0.719 # [1]
}
UniBoDopingDependence_aniso:
{
* Baccarani model (University of Bologna) is used:
* Constant mobility model is defined here as well:
* mu_const = mumax (T/T0)^(-Exponent+Exponent2*(T/T0))
* mu_dop = mu_0(Na,Nd,T/T0)
*
+ (mu_const - mu_0)/(1 + (Nd/Cr)^alpha + (Na/Cr2)^beta)
*
- mu_1(Na,Nd,T/T0)/(1+(Nd/Cs + Na/Cs2)^(-2))
* with mu_const from above
* mu_0 = (mumin1 (T/T0)^(-mumin1_exp) Nd + mumin2 (T/T0)^(-mumin2_exp)Na)/(Nd+
Na)
* mu_1 = (mu1 (T/T0)^(-mu1_exp) Nd + mu2 (T/T0)^(-mu2_exp) Na)/(Nd+Na)
* Cr=Cr (T/T0)^Cr_exp
* Cr2=Cr2 (T/T0)^Cr2_exp
* Cs=Cs (T/T0)^Cs_exp
mumax = 1.4410e+03 , 4.7050e+02
# [cm^2/(Vs)]
Exponent
= 2.45 ,
2.16
# [1]
Exponent2
= -1.1000e-01 , 0.0000e+00
# [1]
mumin1 = 55 , 90
# [cm^2/Vs]
mumin2 = 1.3200e+02 , 44
# [cm^2/Vs]
mumin1_exp
= 0.6 , 1.3
# [1]

mumin2_exp
= 1.3 ,
mu1
= 42.4 ,
mu2
= 73.5 ,
mu1_exp = 0.5 , 2
mu2_exp = 1.25 ,
Pc
= 0.0000e+00 ,
Cr
= 8.9000e+16 ,
Cr2
= 1.2200e+17 ,
Cs
= 2.9000e+20 ,
Cs2
= 7.0000e+20 ,
Cr_exp = 3.65 ,
Cr2_exp = 2.65 ,
Cs_exp = 0.0000e+00 ,
alpha = 0.68 ,
beta
= 0.72 ,

0.7
# [1]
28.2
# [cm^2/Vs]
28.2
# [cm^2/Vs]
# [1]
0.8
# [1]
0.0000e+00
# [cm^3]
1.3000e+18
# [cm^3]
2.4500e+17
# [cm^3]
1.1000e+18
# [cm^3]
6.1000e+20
# [cm^3]
2.2
# [1]
3.1
# [1]
6.2
# [1]
0.77
# [1]
0.719 # [1]

}
UniBoEnormalDependence:
{ * Baccarani model (University of Bologna):
* 1/mu_dop_sc = (1/mu_dop) * [D(f_sc^tau + 1)^(-1/tau) + (1-D)] with:
* mu_dop from DopingDependence , and D=exp(-d/l_crit)
* f_sc =(N1/Ntot)^eta (c_ele (n-n0) +c_hole (p-p0))/Ntot
* 1/mu_Enorm = 1/mu_ac + 1/mu_sr with:
* mu_ac = C (T/T)^(-C_exp)/ Enorm^delta (Ntot/N2)^ac_exp
* mu_sr = B (T/T)^(B_exp)/ Enorm^lambda ((Ntot+N3)/N4)^sr_exp
B
= 5.8000e+18 , 7.8200e+15
# [cm/s]
C
= 1.8600e+04 , 5.7260e+03
# [cm/s]
lambda = 2.64 ,
2.24
# [1]
delta = 0.29 ,
0.3
# [1]
eta
= 0.3 , 0.5
# [1]
l_crit = 1.0000e-06 , 1.0000e-06
# [cm]
tau
= 1 , 3
# [1]
c_ele = 1 , 0.0000e+00
# [1]
c_hole = 0.0000e+00 , 1
# [1]
C_exp = 2.1 , 1.3
# [1]
B_exp = 0.0000e+00 , 1.4
# [1]
ac_exp = 0.026 ,
-2.0000e-02
# [1]
sr_exp = 0.11 ,
0.08
# [1]
N1
= 2.3400e+16 , 2.0200e+16
# [cm^(-3)]
N2
= 4.0000e+15 , 7.8000e+15
# [cm^(-3)]
N3
= 1.0000e+17 , 2.0000e+15
# [cm^(-3)]
N4
= 2.4000e+18 , 6.6000e+17
# [cm^(-3)]
a
= 1 , 1
# [1]
}
UniBoEnormalDependence_aniso:
{ * Baccarani model (University of Bologna):
* 1/mu_dop_sc = (1/mu_dop) * [D(f_sc^tau + 1)^(-1/tau) + (1-D)] with:
* mu_dop from DopingDependence , and D=exp(-d/l_crit)
* f_sc =(N1/Ntot)^eta (c_ele (n-n0) +c_hole (p-p0))/Ntot
* 1/mu_Enorm = 1/mu_ac + 1/mu_sr with:
* mu_ac = C (T/T)^(-C_exp)/ Enorm^delta (Ntot/N2)^ac_exp
* mu_sr = B (T/T)^(B_exp)/ Enorm^lambda ((Ntot+N3)/N4)^sr_exp
B
= 5.8000e+18 , 7.8200e+15
# [cm/s]
C
= 1.8600e+04 , 5.7260e+03
# [cm/s]
lambda = 2.64 ,
2.24
# [1]
delta = 0.29 ,
0.3
# [1]
eta
= 0.3 , 0.5
# [1]
l_crit = 1.0000e-06 , 1.0000e-06
# [cm]
tau
= 1 , 3
# [1]

c_ele
c_hole
C_exp
B_exp
ac_exp
sr_exp
N1
N2
N3
N4
a

=
=
=
=
=
=
=
=
=
=
=

1 , 0.0000e+00
# [1]
0.0000e+00 , 1
# [1]
2.1 , 1.3
# [1]
0.0000e+00 , 1.4
# [1]
0.026 ,
-2.0000e-02
0.11 ,
0.08
# [1]
2.3400e+16 , 2.0200e+16
4.0000e+15 , 7.8000e+15
1.0000e+17 , 2.0000e+15
2.4000e+18 , 6.6000e+17
1 , 1
# [1]

# [1]
#
#
#
#

[cm^(-3)]
[cm^(-3)]
[cm^(-3)]
[cm^(-3)]

}
HydroHighFieldDependence:
{ * Parameter specifications for the high field degradation in
* some hydrodynamic models.
* (A) Meinerzhagen-Engl model (ED-35, pp. 689-697):
* mu_hf = mu / ( 1 + (3*mu/(2*vsat^2*tau_e) * (Tc-Tl))^beta )^1/beta
* Tc=carrier temperature; Tl=lattice temperature
* beta = beta0 (Tl/T0)^betaexp
* Only for the Meinerzhagen-Engl model (ED-35, pp. 689-697)
beta0 = 0.6 , 0.6
# [1]
betaexp = 0.01 ,
0.01
# [1]
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*

(B) Approximation by the ratio of two irrational polynomials

(driving force 'CarrierTempDrivePolynomial'):
If Wmax(interval-1) < w < Wmax(interval), then:
mu_hf = mu*factor*(Numerator^Gn)/(Denominator^Gd),
where (Numerator or Denominator)={SIGMA[A(i)(w^P(i))]+D*Ni},
w=Tc/Tl; Ni(cm^-3) is total doping.
By default: Wmin(0)=Wmax(-1)=0; Wmax(0)=infinity.

*
*
*
*
*
*
*
*

(C) Approximation by a spline function

(driving force 'CarrierTempDriveSpline'):
The high field mobility is computed as

Wmax(interval)_ele =
F(interval)_ele
=
Numerator(interval)_ele{
A(0) =
P(0) =
A(1) =
P(1) =
D
=
G
=
}
Denominator(interval)_ele{
A(0) =
P(0) =
D
=
G
=
}
F(interval)_hol
=
Wmax(interval)_hol =

mu_hf = mu * spline(w)
where the function spline(w) is defined by a sequence of
value pairs, for example:

*
*
Spline (electron) {
*
0 1
*
1 1
*
2 2.5
*
4 4
*
10 5
*
}
*
*
Spline (hole) {
*
0 1
*
1 1
*
2 0.75
*
4 0.5
*
10 0.2
*
}
*
* The given data points are interpolated by a cubic spline. Zero
* derivatives are imposed as boundary conditions at the end points.
* The spline function remains constant beyond the end points.
}
HydroHighFieldDependence_aniso:
{ * Parameter specifications for the high field degradation in
* some hydrodynamic models.
* (A) Meinerzhagen-Engl model (ED-35, pp. 689-697):
* mu_hf = mu / ( 1 + (3*mu/(2*vsat^2*tau_e) * (Tc-Tl))^beta )^1/beta
* Tc=carrier temperature; Tl=lattice temperature
* beta = beta0 (Tl/T0)^betaexp
* Only for the Meinerzhagen-Engl model (ED-35, pp. 689-697)
beta0 = 0.6 , 0.6
# [1]
betaexp = 0.01 ,
0.01
# [1]
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*

(B) Approximation by the ratio of two irrational polynomials

(driving force 'CarrierTempDrivePolynomial'):
If Wmax(interval-1) < w < Wmax(interval), then:
mu_hf = mu*factor*(Numerator^Gn)/(Denominator^Gd),
where (Numerator or Denominator)={SIGMA[A(i)(w^P(i))]+D*Ni},
w=Tc/Tl; Ni(cm^-3) is total doping.
By default: Wmin(0)=Wmax(-1)=0; Wmax(0)=infinity.
Wmax(interval)_ele =
F(interval)_ele
=
Numerator(interval)_ele{
A(0) =
P(0) =
A(1) =
P(1) =
D
=
G
=
}
Denominator(interval)_ele{
A(0) =
P(0) =
D
=
G
=
}
F(interval)_hol
=
Wmax(interval)_hol =

*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*

(C) Approximation by a spline function

(driving force 'CarrierTempDriveSpline'):
The high field mobility is computed as
mu_hf = mu * spline(w)
where the function spline(w) is defined by a sequence of
value pairs, for example:
Spline (electron) {
0 1
1 1
2 2.5
4 4
10 5
}
Spline (hole) {
0 1
1 1
2 0.75
4 0.5
10 0.2
}
The given data points are interpolated by a cubic spline. Zero
derivatives are imposed as boundary conditions at the end points.
The spline function remains constant beyond the end points.

}
Scharfetter * relation and trap level for SRH recombination:
{ * tau = taumin + ( taumax - taumin ) / ( 1 + ( N/Nref )^gamma)
* tau(T) = tau * ( (T/300)^Talpha )
(TempDep)
* tau(T) = tau * exp( Tcoeff * ((T/300)-1) ) (ExpTempDep)
taumin = 0.0000e+00 , 0.0000e+00
# [s]
taumax = 1.0000e-05 , 3.0000e-06
# [s]
Nref
= 1.0000e+16 , 1.0000e+16
# [cm^(-3)]
gamma = 1 , 1
# [1]
Talpha = -1.5000e+00 , -1.5000e+00
# [1]
Tcoeff = 2.55 ,
2.55
# [1]
Etrap = 0.0000e+00
# [eV]
}
SurfaceRecombination * surface
{ * s = S0 ( 1 + Sref ( N/Nref
S0
= 1.0000e+03 ,
Sref
= 1.0000e-03
Nref
= 1.0000e+16
gamma = 1
# [1]
Etrap = 0.0000e+00
}

SRH recombination:
)^gamma ) recombination velocity
1.0000e+03
# [cm/s]
# [1]
# [cm^(-3)]
# [eV]

Auger * coefficients:
{ * R_Auger = ( C_n n + C_p p ) ( n p - ni_eff^2)
* with C_n,p = (A + B (T/T0) + C (T/T0)^2) (1 +
A
= 6.7000e-32 , 7.2000e-32
#
B
= 2.4500e-31 , 4.5000e-33
#
C
= -2.2000e-32 , 2.6300e-32
#
H
= 3.46667 ,
8.25688 # [1]

H exp(-{n,p}/N0))
[cm^6/s]
[cm^6/s]
[cm^6/s]

N0

= 1.0000e+18 , 1.0000e+18

# [cm^(-3)]

}
TrapAssistedAuger * lifetimes:
{ * 1/tau_TAA = c ( n + p )
c
= 1.0000e-12 , 1.0000e-12
}

# [cm^3/s]

TrapAssistedTunneling
{ * See Sentaurus Device manual `Trap-Assisted Tunneling enhanced SRH'
S
= 3.5 # [1]
hbarOmega
= 0.068 # [eV]
m_theta = 0.258 ,
0.24
# [1]
Z
= 0.0000e+00
# [1]
MinField
= 0.0000e+00
# [V/cm]
DenCorRef
= 1.0000e+03 , 1.0000e+03
# [cm^-3]
}
HurkxTrapAssistedTunneling
{ * SRHlifetime = tau0/(1+Gt)
* TrapXsection = Xsec0*(1+Gt)
* Gt = pi^0.5*E*exp(E*E/3)*(2-erfc(0.5*(En/E-E))),
for E < En^0.5
* Gt = (pi*E)^0.5*En^0.25*exp(-En+E*En^0.5+En^1.5/E/3)*
*
erfc(E^0.5*En^0.25-En^0.75/E^0.5),
for E >= En^0.5
* where
*
E = F/Fref,
*
F is the electric field,
*
Fref = (8*mt*m0*(kB*T)^3)^0.5/q/h / ~4.3e5*mt^0.5*(T/300)^1.5 V/cm /,
*
En is a function of trap level and carrier concentration (see manual),
*
the trap level will be used from SRH or Trap specifications.
mt
= 0.5 , 0.5
# [1]
}
PooleFrenkel
{ * TrapXsection = Xsec0*(1+Gpf)
* Gpf = (1+(a-1)*exp(a))/a^2-0.5
* where
*
a = (1/kT)*(q^3*F/pi/e0/epsPF)^0.5,
*
F is the electric field.
epsPF = 11.7 ,
11.7
# [1]
}
CDL * Coupled Defect-Level Recombination:
{ * See Simul manual 'Coupled Defect-Level Recombination
* Here: Variable = value for trap1 , value for trap2 # [units]
Etrap = 0.0000e+00 , 0.0000e+00
# [eV]
e_taumin
= 0.0000e+00 , 0.0000e+00
# [s]
e_taumax
= 1.0000e-05 , 1.0000e-05
# [s]
e_Nref = 1.0000e+16 , 1.0000e+16
# [cm^(-3)]
e_gamma = 1 , 1
# [1]
e_Talpha
= -1.5000e+00 , -1.5000e+00
# [1]
e_Tcoeff
= 2.55 ,
2.55
# [1]
h_taumin
= 0.0000e+00 , 0.0000e+00
# [s]
h_taumax
= 3.0000e-06 , 3.0000e-06
# [s]
h_Nref = 1.0000e+16 , 1.0000e+16
# [cm^(-3)]
h_gamma = 1 , 1
# [1]
h_Talpha
= -1.5000e+00 , -1.5000e+00
# [1]
h_Tcoeff
= 2.55 ,
2.55
# [1]
m_theta_e
= 0.258 ,
0.258 # [1]
m_theta_h
= 0.24 ,
0.24
# [1]

TrapTrapRate
= 1.0000e+15
# [cm^-3 s^-1]
S
= 2 , 2
# [1]
hbarOmega
= 0.068 ,
0.068 # [eV]
MinField
= 0.0000e+00
# [V/cm]
Z
= 0.0000e+00 , 0.0000e+00
# [1]
}
vanOverstraetendeMan * Impact Ionization:
{ * G_impact = alpha_n n v_drift_n + alpha_p p v_drift_p
* with alpha = gamma a exp(-b gamma/E) for E<E0 (low) and E>E0 (high)
* with gamma = tanh(hbarOmega/(2kT0)) / tanh(hbarOmega/(2kT))
a(low) = 7.0300e+05 , 1.5820e+06
# [1/cm]
a(high) = 7.0300e+05 , 6.7100e+05
# [1/cm]
b(low) = 1.2310e+06 , 2.0360e+06
# [V/cm]
b(high) = 1.2310e+06 , 1.6930e+06
# [V/cm]
E0
= 4.0000e+05 , 4.0000e+05
# [V/cm]
hbarOmega
= 0.063 ,
0.063 # [eV]
}
vanOverstraetendeMan_aniso * Impact Ionization:
{ * G_impact = alpha_n n v_drift_n + alpha_p p v_drift_p
* with alpha = gamma a exp(-b gamma/E) for E<E0 (low) and E>E0 (high)
* with gamma = tanh(hbarOmega/(2kT0)) / tanh(hbarOmega/(2kT))
a(low) = 7.0300e+05 , 1.5820e+06
# [1/cm]
a(high) = 7.0300e+05 , 6.7100e+05
# [1/cm]
b(low) = 1.2310e+06 , 2.0360e+06
# [V/cm]
b(high) = 1.2310e+06 , 1.6930e+06
# [V/cm]
E0
= 4.0000e+05 , 4.0000e+05
# [V/cm]
hbarOmega
= 0.063 ,
0.063 # [eV]
}
OkutoCrowell *
{ * G_impact =
* with alpha
a
b
c
d
gamma
delta
}

Impact Ionization:
alpha_n n v_drift_n + alpha_p p v_drift_p
= a (1+c(T-300)) E^gamma exp[-(b (1+d(T-300)) /E )^delta]
= 0.426 ,
0.243 # [1/cm]
= 4.8100e+05 , 6.5300e+05
# [V/cm]
= 3.0500e-04 , 5.3500e-04
# [1/K]
= 6.8600e-04 , 5.6700e-04
# [1/K]
= 1 , 1
# [1]
= 2 , 2
# [1]

OkutoCrowell_aniso * Impact Ionization:

{ * G_impact = alpha_n n v_drift_n + alpha_p p v_drift_p
* with alpha = a (1+c(T-300)) E^gamma exp[-(b (1+d(T-300)) /E )^delta]
a
= 0.426 ,
0.243 # [1/cm]
b
= 4.8100e+05 , 6.5300e+05
# [V/cm]
c
= 3.0500e-04 , 5.3500e-04
# [1/K]
d
= 6.8600e-04 , 5.6700e-04
# [1/K]
gamma = 1 , 1
# [1]
delta = 2 , 2
# [1]
}
Lackner * Impact Ionization:
{ * G_impact = alpha_n n v_drift_n + alpha_p p v_drift_p
* with alpha = a_x gamma / Z exp(-b_x gamma / E) , x=n,p
* with gamma = tanh(hbarOmega/(2kT0)) / tanh(hbarOmega/(2kT))
* and Z = 1 + b_n gamma / E exp(-b_n gamma / E) + b_p gamma / E exp(-b_p gamma
/ E)
a
= 1.3160e+06 , 1.8180e+06
# [1/cm]

b
= 1.4740e+06 , 2.0360e+06
hbarOmega
= 0.063 ,
0.063

# [V/cm]
# [eV]

}
UniBo * Impact Ionization (University of Bologna):
{ * G_impact = alpha_n n v_drift_n + alpha_p p v_drift_p
* with alpha_p = E / (A_p + B_p * exp(D_p/(E + C_p)))
* with alpha_n = E / (A_n + B_e * exp(D_e/(E + C_e)))
* with A_p = a0_p + a1_p * T
* with B_p = b0_p * exp (b1_p * T)
* with C_p = c0_p * T^(c1_p)
* with D_p = d0_p + d1_p * T + d2_p *T^2
* with A_n = a0_n + a1_n * T ^(a2_n)
* with B_n = b0_n
* with C_n = c0_n + c1_n * T + c2_n *T^2
* with D_n = d0_n + d1_n * T + d2_n *T^2
ha0
= 4.3383 ,
2.376 # [1/V]
ha1
= -2.4200e-12 , 0.01033 # [1/(V K)]
ha2
= 4.1233 ,
0.0000e+00
# [1/(V K^2)]
hb0
= 0.235 ,
0.17714 # [1]
hb1
= 0.0000e+00 , -2.1780e-03
# [1/K]
hb2
= 0.0000e+00 , 0.0000e+00
# [1/K^2]
hc0
= 1.6831e+04 , 9.4700e-03
# [V/cm]
hc1
= 4.3796 ,
2.4924 # [V/(cm K)]
hc2
= 0.13005 ,
0.0000e+00
# [V/(cm K^2)]
hd0
= 1.2337e+06 , 1.4043e+06
# [V/cm]
hd1
= 1.2039e+03 , 2.9744e+03
# [V/(cm K)]
hd2
= 0.56703 ,
1.4829 # [V/(cm K^2)]
}
Band2BandTunneling
{ * See Sentaurus Device manual `Band-To-Band Tunneling'
A
= 8.9770e+20
# [cm / (s V^2)]
B
= 2.1466e+07
# [eV^(-3/2) V/cm]
hbarOmega
= 0.0186
# [eV]
*
*
*
*

Traditional models for the following keywords in input file:

Band2Band(E1) : A1*E*exp(-B1/E)
Band2Band(E1_5): A1_5*E^1.5*exp(-B1_5/E)
Band2Band(E2) : A2*E^2*exp(-B2/E)
A1
= 1.1000e+27
# [1/cm/sec/V]
B1
= 2.1300e+07
# [V/cm]
A1_5
= 1.9000e+24
# [1/cm/sec/V^1.5]
B1_5
= 2.1900e+07
# [V/cm]
A2
= 3.5000e+21
# [1/cm/sec/V^2]
B2
= 2.2500e+07
# [V/cm]

* Hurkx model for the following keywords in input file:

* Band2Band(Hurkx) : -Agen*D*(E/E0)^Pgen*exp(-Bgen*(Eg/Eg300)^1.5/E) if D < 0
*
-Arec*D*(E/E0)^Prec*exp(-Brec*(Eg/Eg300)^1.5/E) if D > 0
*
D = (n*p-ni^2)/(n+ni)/(p+ni)*(1-|alpha|)+alpha, E0 = 1 V
/cm
*
So, if alpha = 0, it's original Hurkx model,
*
if alpha = -1, it's only generation,
*
if alpha = +1, it's only recombination.
Agen
= 3.5000e+21
# [1/cm^3/sec]
Bgen
= 2.2500e+07
# [V/cm]
Pgen
= 2
# [1]
Arec
= 3.5000e+21
# [1/cm^3/sec]
Brec
= 2.2500e+07
# [V/cm]

Prec
alpha

= 2
# [1]
= 0.0000e+00

# [1]

* nonlocal B2B models for the following keywords in command file:

* Band2Band(Model=NonlocalPath1) : Nonlocal B2B tunneling with single transiti
on process using the first tunneling path
* Band2Band(Model=NonlocalPath2) : Nonlocal B2B tunneling with two
transiti
on processes using the first and second tunneling paths
* Band2Band(Model=NonlocalPath3) : Nonlocal B2B tunneling with three transiti
on processes using the all three tunneling paths
* For the i-th nonlocal B2B process (i=1, 2, or 3):
* Apathi : Prefactor Ad or Ap in the uniform field limit for the direct or ind
irect tunneling
* Bpathi : Exponent Bd or Bp in the uniform field limit for the direct or ind
irect tunneling
* Dpathi : The conduction band offset D
* Ppathi : The phonon energy P
*
Note that the indirect tunneling process is assumed if P>0, and the
direct tunneling process is assumed if P=0
* Rpathi : The ratio mv/mc. If Rpathi=0, it is automatically determined by
*
mv/mc = (1 + 2*mr)/(1 - 2*mr)
*
where mr=mc*mv/(mc+mv) is the reduced mass
* In the uniform field limit, the generation rate can be expressed by
* G = A * (F/F0)^2 * Exp(-B/F) for direct tunneling
* = A * (F/F0)^2.5 * Exp(-B/F) for indirect tunneling
* where
* Ad = g * mr^0.5 * (qF0)^2 / (36 * pi * h_bar^2 *E_T^0.5)
* Ap = g *(mc*mv)^1.5 * (1+2*N) * (qF0)^2.5 * Dop^2 / (2^7.75 * pi^2.5 * h_bar
^2.5 * mr^1.25 * E_T^1.75 * rho * P)
* Bd = pi
* mr^0.5 * E_T^1.5 / (2 * h_bar * q)
* Bp = 2^2.5 * mr^0.5 * E_T^1.5 / (3 * h_bar * q)
* F0 = 1 V/cm, qF0 = 1 eV/cm, E_T = E_G + D
* From the above expression, the microscopic parameters such as mr, mc, and mv
for the nonlocal B2B model are extracted internally
Apath1 = 4.0000e+14
# [1/cm^3/sec]
Bpath1 = 1.9000e+07
# [V/cm]
Dpath1 = 0.0000e+00
# [eV]
Ppath1 = 0.037 # [eV]
Rpath1 = 0.0000e+00
# [1]
Apath2 = 0.0000e+00
# [1/cm^3/sec]
Bpath2 = 0.0000e+00
# [V/cm]
Dpath2 = 0.0000e+00
# [eV]
Ppath2 = 0.0000e+00
# [eV]
Rpath2 = 0.0000e+00
# [1]
Apath3 = 0.0000e+00
# [1/cm^3/sec]
Bpath3 = 0.0000e+00
# [V/cm]
Dpath3 = 0.0000e+00
# [eV]
Ppath3 = 0.0000e+00
# [eV]
Rpath3 = 0.0000e+00
# [1]
MaxTunnelLength = 1.0000e-05
# [cm]
* min length to interfaces (for traditional & Hurkx models):
dDist = 0.0000e+00
# [cm]
* min potential difference on length dPot/E (for traditional & Hurkx models):
dPot
= 0.0000e+00
# [V]
* numeric smoothing
MinField
= 0.0000e+00
# [V/cm]
MinGradQF
= 0.0000e+00
# [eV/cm]
DenCorRef
= 0.0000e+00 , 0.0000e+00
# [cm^-3]
}

BarrierTunneling
{ * Non Local Barrier Tunneling
* G(r) = g*A*T/kB*F(r)*Pt(r)*ln[(1+exp((E(r)-Es)/kB/T))/(1+exp((E(r)-Em)/kB/T)
)]
* where:
*
Pt(r) is WKB approximation for the tunneling probability
*
g = As/A, As is the Richardson constant for carriers in semiconductor
*
A is the Richardson constant for free electrons
*
F(r) is the electric field
*
E(r) is carrier energy
*
Es is carrier quasi fermi energy in semiconductor
*
Em is carrier fermi energy in metal
*
alpha is the prefactor for quantum potential correction
*
eoffset and hoffset are lists of band offsets
g
= 2.1 , 0.66
# [1]
mt
= 0.0000e+00 , 0.0000e+00
# [1]
alpha = 0.0000e+00 , 0.0000e+00
# [1]
eoffset = () # eV
hoffset = () # eV
}
SchottkyResistance
{ * Schottky resistance parameters
* Rsch = Rinf*(300/T)*exp(q*PhiB/E0)
* where:
*
PhiB is the Schottky potential barrier
*
Rinf is the Schottky resistance for an infinite doping concentration
*
E0 = E00*cosh(E00/kT), E00 = (qh/4pi)*(N/eps/mt)^0.5
*
N is the doping concentration at the contact
*
T is the device temperature (defined in Physics section)
*
eps is the semiconductor permitivity
*
mt is the tunneling mass
Rinf
= 2.4000e-09 , 5.2000e-09
# [Ohm*cm^2]
PhiB
= 0.6 , 0.51
# [eV]
mt
= 0.19 ,
0.16
# [1]
}
SingletExciton
{ * gamma - prefactor for singlet exciton generation rate
* l_diff - singlet exciton diffusion length
* tau - singlet exciton lifetime for radiative decay
* tau_trap - singlet exciton lifetime for trap-assisted radiative decay
* ex_cXsection - singlet exciton-carrier reaction cross section
* vth - singlet exciton thermal velocity at 300 K
* vel - singlet exciton interface recombination velocity
* Eex - singlet exciton binding energy
* gex - singlet exciton degeneracy
gamma = 0.25 # [1]
l_diff = 1.0000e-03
# [cm]
tau
= 1.0000e-07
# [s]
tau_trap
= 1.0000e-08
# [s]
ex_cXsection
= 1.0000e-08 , 1.0000e-08
# [cm^2]
vth
= 1.0000e+07
# [cm/s]
vel
= 1.0000e+08
# [cm/s]
Eex
= 0.015 # [eV]
gex
= 4
# [1]

vth_car = 1.0000e+03 , 1.0000e+03

# [cm/s]

}
SHEDistribution {
* rho: mass density of the crystal
* epsilon: Relative Permittivity of the semiconductor
* eps_ins: Relative Permittivity of the insulator
rho
= 2.329 # [g/cm^3]
epsilon = 11.7 # [1]
eps_ins = 2.15 # [1]
* Following quantities have separate electron and hole values
* m_s: Semiconductor conductivity effective mass,
* m_dos: Semiconductor DOS effective mass,
* alpha: Non-parabolicity factor
* g: band degeneracy
* A: prefactor of the gate current density
* m_ins: Insulator effective mass
* E_barrier: height of barrier between semiconductor and insulator
* Lins: Meen free path in Insulator
* mumax: Phonon-limited mobility at 300 K which will be used to
* adjust acoustic phonon scattering rate when AdjustACPhononScattering
* option is turned on. By default, AdjustACPhononScattering option
* is turned off
* Dac_cl[i][j]: Acoustic deformation potential/sound vel
* Dop[i][j]: Deformation potential for optical phonon
*
for intra (i==j) and inter (i<j) band scattering (1 <= i, j <= 4)
*
where i and j represent band indices
*
If the deformation potential is independent of band index pair,
*
it can be defined as a scalar quantity
* HbarOmega: optical phonon energy
* swv0: offset of the square wave vector for impurity scattering
* Two different formulas are available for the Impact ionization model
* which is chosen by ii_formula
* ii_formula = 1
* ii_rate(E) = ii_rate1*((E - ii_energy1)/eV)^ii_exponent1 : ii_energy1 < E
< ii_energy3
*
= ii_rate2*((E - ii_energy2)/eV)^ii_exponent2 : ii_energy3 < E
*
* ii_formula = 2
* ii_rate(E) = ii_rate1*Step(E - ii_energy1)*((E - ii_energy1)/eV)^ii_expone
nt1
*
+ ii_rate2*Step(E - ii_energy2)*((E - ii_energy2)/eV)^ii_expone
nt2
*
+ ii_rate3*Step(E - ii_energy3)*((E - ii_energy3)/eV)^ii_expone
nt3
* The impact ionization parameters for electrons are from
*
C. Jungemann and B. Meinerzhagen,
*
Hierarchical Device Simulation, The Monte-Carlo Perspective
* The impact ionization parameters for holes are from
*
T. Kunikiyo, et al.,
*
Journal of Applied Physics, vol. 79, pp. 7718-7725
m_s
= 0.26 ,
0.26
# [m0]
m_dos = 0.328 ,
0.689 # [m0]
alpha = 0.5 , 0.669 # [1/eV]
g
= 6 , 1
# [1]
A
= 1 , 1
# [1]
m_ins = 0.5 , 0.77
# [m0]
E_barrier
= 3.1 , 4.73
# [eV]
Lins
= 2.0000e-07 , 2.0000e-07
# [cm]

*
*
*
*
*
*
*
*
*
*

mumax = 1.4300e+03 , 4.8000e+02

# [cm^2*V^-1*s^-1]
Dac_cl = 1.0270e-05 , 6.2900e-06
# [eV*s/cm]
Dop
= 1.2500e+09 , 8.7000e+08
# [eV/cm]
HbarOmega
= 0.06 ,
0.0633 # [eV]
swv0
= 0.0000e+00 , 0.0000e+00
# [cm^-2]
ii_formula
= 1 , 1
# [1]
ii_rate1
= 1.4900e+11 , 0.0000e+00
# [1/s]
ii_rate2
= 1.1300e+12 , 1.1400e+12
# [1/s]
ii_rate3
= 0.0000e+00 , 0.0000e+00
# [1/s]
ii_energy1
= 1.128 ,
1.128 # [eV]
ii_energy2
= 1.572 ,
1.49
# [eV]
ii_energy3
= 1.75 ,
1.49
# [eV]
ii_exponent1
= 3 , 0.0000e+00
# [1]
ii_exponent2
= 2 , 3.4
# [1]
ii_exponent3
= 0.0000e+00 , 0.0000e+00
# [1]
Following tables are defined in order to fit impurity scattering
for majority and minority doping from 10^15 /cm^3 to 10^20 /cm^3
with the row index i representing the doping 10^(15 + i/4) /cm^3
See, for example, C. Jungemann and B. Meinerzhagen,
Hierarchical Device Simulation, The Monte-Carlo Perspective
These fitting parameters will be used when AdjustImpurityScattering
option is turned off. By default, AdjustImpurityScattering option
will be turned on, and these parameters will be neglected
efit(i) = majority minority : Electron fitting parameters
hfit(i) = majority minority : Hole fitting parameters
efit( 0)
=
1.20698 2.63089
efit( 1)
=
1.26585 2.61522
efit( 2)
=
1.35031 2.62123
efit( 3)
=
1.45972 2.64571
efit( 4)
=
1.59727 2.68504
efit( 5)
=
1.7681 2.73218
efit( 6)
=
1.97625 2.7758
efit( 7)
=
2.22278 2.80091
efit( 8)
=
2.50474 2.79066
efit( 9)
=
2.81348 2.72938
efit(10)
=
3.13088 2.60729
efit(11)
=
3.4262 2.42644
efit(12)
=
3.66329 2.2049
efit(13)
=
3.8209 1.9745
efit(14)
=
3.91451 1.77291
efit(15)
=
4.00744 1.63637
efit(16)
=
4.2118 1.5994
efit(17)
=
4.69302 1.70363
efit(18)
=
5.69842 2.01596
efit(19)
=
7.63117 2.65859
efit(20)
=
11.1923 3.85825
hfit( 0)
=
2.36872 3.84998
hfit( 1)
=
2.47647 3.82989
hfit( 2)
=
2.65631 3.8773
hfit( 3)
=
2.91784 3.98847
hfit( 4)
=
3.28127 4.16424
hfit( 5)
=
3.77842 4.40187
hfit( 6)
=
4.44356 4.68485
hfit( 7)
=
5.2981 4.97515
hfit( 8)
=
6.33175 5.21189
hfit( 9)
=
7.48564 5.32107
hfit(10)
=
8.64257 5.23752
hfit(11)
=
9.62681 4.932
hfit(12)
=
10.228 4.42987
hfit(13)
=
10.2758 3.80695

hfit(14)
hfit(15)
hfit(16)
hfit(17)
hfit(18)
hfit(19)
hfit(20)

=
=
=
=
=
=
=

9.74236
8.78324
7.66672
6.65698
5.94642
5.66599
5.94556

3.16136
2.57856
2.11166
1.78292
1.59808
1.56334
1.70207

}
AlphaParticle
{ * Generation by an alpha particle with energy E:
* G = 1/sqrt(2 pi s^2) exp( -1/2 ((t-tm)/s)^2) *
*
scale exp[-1/2 ( (v^2+w^2)/wt^2 )] *
*
{ c1 exp[alpha u] + c2 exp[ -1/2 ( (u-alpha1)/alpha2 )^2 ] }
* if u<alpha1+alpha3; G=0 else.
* with alpha1 = a0 + a1 E + a2 E^2, c1 = exp[alpha*(alpha1[10MeV]-alpha1[E])]
* scale from generated e-h pairs = E/Ep
wt
= 1.0000e-05
# [cm]
c2
= 1.4 # [1]
alpha = 90
# [1/cm]
a0
= -1.0330e-04 # [cm]
a1
= 2.7000e-10
# [cm/eV]
a2
= 4.3300e-17
# [cm/eV^2]
alpha2 = 5.5000e-04
# [cm]
alpha3 = 2.0000e-04
# [cm]
Ep
= 3.6 # [eV]
s
= 2.0000e-12
# [s]
}
************************** Generation by a Heavy Ion *************************
*************
* The temporal distribution is a Gaussian Function
*
* The radial spatial distrbution can be a exponential, a gaussian function or gi
ve by table *
* The spatial distribution along the path is coming from a table
*
* G = LET(l)*R(r)*T(t)
*
* LET(l) = a1 + a2*l + a3 exp(a4*l) + k'*[c1*(c2 + c3*l)^(c4) + Lf(l)]
*
* with Lf(l) = { Lf1, Lf2, Lf3, ...}
*
* "Lfi" are the Lf values for each length "lengthi"
*
* if Radial_Exponential_Distribution;
*
*
R(r) = exp[-(r/wt)]
*
*
case 3D (unit pC/um) : k' = k / (2*pi*wt^2)
*
*
case 2D (unit pC/um) : k' = k / (2*e*wt)
*
*
if unit = Pairs/cm^3 => k' = k
*
* if Radial_Gaussian_Distribution;
*
*
R(r)= exp[-(r/wt)^2]
*

case 3D (unit pC/um) : k' = k / (pi*wt^2)

*
*
case 2D (unit pC/um) : k' = k / (e*wt*sqrt(pi))
*
*
if unit = Pairs/cm^3 => k' = k
*
* with wt(l) = { wt1, wt2, wt3 ...}
*
* "wti" are the wt values for each length "lengthi"
*
* e = 1 um
*
* See the manual for more details.
*
HeavyIon
{
s_hi
= 2.0000e-12
# [s]
a_1
= 0.0000e+00
# [carriers/cm^3]
a_2
= 0.0000e+00
# [carriers/cm^3/cm]
a_3
= 0.0000e+00
# [carriers/cm^3]
a_4
= 0.0000e+00
# [1/um]
k_hi
= 1
# [1]
c_1
= 0.0000e+00
# [carriers/cm^3 or pC/um]
c_2
= 0.0000e+00
# [1]
c_3
= 1
# [1/cm]
c_4
= 0.0000e+00
# [1]
}
DirectTunnelling
{ * eps_ins: insulator dielectricity,
* E_F_M:
metal Fermi energy,
* m_M:
metal effective mass,
* m_ins:
insulator effective mass,
* m_s:
semiconductor effective mass,
* m_dos:
semiconductor DOS effective mass,
* E_barrier: height of barrier between semiconductor and oxide,
* E_i:
energy nodes for pseudo barrier,
* See the manual for more details.
eps_ins = 2.13 # [1]
E_F_M = 11.7 # [eV]
m_M
= 1
# [m0]
m_ins = 0.5 , 0.77
# [m0]
m_s
= 0.19 ,
0.16
# [m0]
m_dos = 0.32 ,
0.0000e+00
# [m0]
E_barrier
= 3.15 ,
4.73
# [eV]
E0
= 0.0000e+00 , 0.0000e+00
# [eV]
E1
= 0.0000e+00 , 0.0000e+00
# [eV]
E2
= 0.0000e+00 , 0.0000e+00
# [eV]
}
RadiativeRecombination * coefficients:
{ * R_Radiative = C * (T/Tpar)^alpha * (n p - ni_eff^2)
* C
* alpha
C
= 0.0000e+00
# [cm^3/s]
alpha = 0.0000e+00
# []
}
VanDortQMModel
{ * dEg = Fit*(13/9)*(epsSi/(4kT))^1/3*(En-EcritQC)^2/3 - QM bandgap shift at in

version surafce,
* F(d) = 2*exp(-(d/dRef)^2)/(1+exp(-2*(d/dRef)^2)) - interface distance functi
on,
* where En - magnitude of electric field normal to interface,
*
d - distance from interface,
*
Fit=eFit - vanDort's fitting parameter for electrons,
*
Fit=hFit - vanDort's fitting parameter for holes,
*
EcritQC=eEcritQC - fitting parameter - critical normal
*
electric field for conduction band correction,
*
EcritQC=hEcritQC - fitting parameter - critical normal
*
electric field for valence band correction,
*
dRef - reference distance from interface.
eFit
= 2.4000e-08
# [eV*cm]
hFit
= 1.8000e-08
# [eV*cm]
eEcritQC
= 1.0000e+05
# [V/cm]
hEcritQC
= 1.0000e+05
# [V/cm]
dRef
= 2.5000e-06
# [cm]
* See the manual for more details.
}
MLDAQMModel
{ * See the manual for more details.
}
Hallscattering
{ ************************** Magnetic Field: ************************
* mu_n(B) = rn * mu_n; mu_p(B) = rp * mu_p
*******************************************************************
rn
= 1.15 # [1]
rp
= -7.0000e-01 # [1]
}
MonopolarGRNoise
{
*--------------------------------------------------------------------*
*
K = |J_n|^2/n * (4 e_alpha e_tau)/(1 + omega^2 e_tau^2)
*
*--------------------------------------------------------------------*
* with J_n electron current density, n electron density.
*
* Corresponding expression for holes
*
*--------------------------------------------------------------------*
e_alpha = 1
# [1]
h_alpha = 1
# [1]
e_tau = 1.0000e-07
# [s]
h_tau = 1.0000e-07
# [s]
}
FlickerGRNoise
{
*--------------------------------------------------------------------*
*
K = |J_n|^2/n * (2 e_alpha_H)/(pi f ln(e_tau1/e_tau0))
*
*
* ( arctan(omega e_tau1) - arctan (omega e_tau0) )
*
*--------------------------------------------------------------------*
* with J_n electron current density, n electron density,
*
* f frequency, omega = 2 pi f .
*
* Corresponding expression for holes
*
*--------------------------------------------------------------------*
e_alpha_H
= 2.0000e-03
# [1]
h_alpha_H
= 2.0000e-03
# [1]
e_tau0 = 1.0000e-06
# [s]
h_tau0 = 1.0000e-06
# [s]

e_tau1 = 3.0000e-04
h_tau1 = 3.0000e-04

# [s]
# [s]

}
BarrierLowering
{ * dB = a1 * ( (E/E0)^p1 - (Eeq/E0)^p1_eq ) +
*
a2 * ( (E/E0)^p2 - (Eeq/E0)^p2_eq ),
* where E is the electric field [V/cm],
*
Eeq is the electric field at equilibrium (zero bias),
*
E0 = 1 V/cm.
a1
= 2.6000e-04
# [eV]
p1
= 0.5 # [1]
p1_eq = 0.5 # [1]
a2
= 0.0000e+00
# [eV]
p2
= 1
# [1]
p2_eq = 1
# [1]
}
Traps
{
*
*
*
/cm
*
*
*

G is degeneracy factor
G
= 1 , 1
# [1]
XsecFormula=1: Xsec(F) = Xsec
XsecFormula=2: Xsec(F) = Xsec*(1+a1*(F/F0)^p1+a2*(F/F0)^p2)^p0, F0 = 1 V
XsecFormula=3: Xsec(F)
XsecFormula=4: Xsec(F)
XsecFormula=5: Xsec(F)
XsecFormula
= 1 ,
Xsec
= 1.0000e-15 ,
a1
= 0.0000e+00 ,
p1
= 1 , 1
a2
= 0.0000e+00 ,
p2
= 1 , 1
p0
= 1 , 1

= Xsec*(1+Gt), Gt is Hurkx TATunneling factor

= Xsec*(1+Gpf), Gpf is Poole-Frenkel factor
= Nasyrov model
1
# [1]
1.0000e-15
# [cm^2]
0.0000e+00
# [1]
# [1]
0.0000e+00
# [1]
# [1]
# [1]

*
*
*

VthFormula=1: Vth(T) = Vth*(T/300)^1/2

VthFormula=2: Vth(T) = (3*k*T/m_300)^1/2,
m_300 is DOS mass calculated at T=300
VthFormula
= 1 , 1
# [1]
Vth
= 2.0420e+07 , 1.5626e+07
# [cm/s]
Jcoef = 0.0000e+00 , 0.0000e+00
# [1]

*
*

Tunneling to traps is determined by the interaction volume

TrapVolume, the Huang-Rhys factor, and the Phonon energy.
TrapVolume
= 0.0000e+00
# [um^3]
HuangRhys
= 0.0000e+00
# [1]
PhononEnergy
= 0.0000e+00
# [eV]
alpha = 1
# [1]

Constant emission rate term

ConstEmissionRate
= 0.0000e+00 , 0.0000e+00

# [1/s]

}
TableODB
{ * Each entry of the table consists of three values:
*complex refractive index n + i*k (unitless)
*refractive index = n, absorption coefficient = 4*pi*k/wavelength

*WAVELEN(um)
0.1908
0.1984
0.2066
0.2073
0.208
0.2087
0.2094
0.2101
0.2109
0.2116
0.2123
0.213
0.2138
0.2145
0.2153
0.216
0.2168
0.2175
0.2183
0.2191
0.2198
0.2206
0.2214
0.2222
0.223
0.2238
0.2246
0.2254
0.2263
0.2271
0.2279
0.2228
0.2296
0.2305
0.2313
0.2322
0.2311
0.2339
0.2348
0.2357
0.2366
0.2375
0.2384
0.2394
0.2403
0.2412
0.2422
0.2431
0.2441
0.245
0.246
0.247
0.248
0.249
0.25 1.58
0.251
0.252
0.253
0.2541

n
0.84
0.968
1.01
1.036
1.046
1.066
1.07
1.083
1.088
1.102
1.109
1.119
1.133
1.139
1.155
1.164
1.175
1.18
1.195
1.211
1.222
1.235
1.247
1.265
1.28
1.299
1.319
1.34
1.362
1.389
1.416
1.445
1.471
1.502
1.526
1.548
1.566
1.579
1.585
1.59
1.591
1.592
1.589
1.586
1.582
1.579
1.573
1.571
1.57
1.569
1.568
1.569
1.57
1.575
3.632;
1.584
1.591
1.597
1.608

k
2.73;
2.89;
2.909;
2.928;
2.944;
2.937;
2.963;
2.982;
2.987;
3.005;
3.015;
3.025;
3.045;
3.061;
3.073;
3.086;
3.102;
3.112;
3.135;
3.15;
3.169;
3.19;
3.206;
3.228;
3.245;
3.267;
3.285;
3.302;
3.319;
3.334;
3.35;
3.359;
3.366;
3.368;
3.368;
3.364;
3.358;
3.353;
3.346;
3.344;
3.344;
3.347;
3.354;
3.363;
3.376;
3.389;
3.408;
3.429;
3.451;
3.477;
3.504;
3.533;
3.565;
3.598;
3.67;
3.709;
3.749;
3.789;

0.2551
0.2562
0.2572
0.2583
0.2594
0.2605
0.2616
0.2627
0.2638
0.2649
0.2661
0.2672
0.2684
0.2695
0.2707
0.2719
0.2731
0.2743
0.2755
0.2768
0.278
0.2792
0.2805
0.2818
0.2831
0.2844
0.2857
0.287
0.2883
0.2897
0.291
0.2924
0.2938
0.2952
0.2966
0.298
0.2995
0.3009
0.3024
0.3039
0.3054
0.3069
0.3084
0.31 5.01
0.3115
0.3131
0.3147
0.3163
0.3179
0.3195
0.3212
0.3229
0.3246
0.3263
0.328
0.3297
0.3315
0.3333
0.3351
0.3369

1.618
1.629
1.643
1.658
1.673
1.692
1.713
1.737
1.764
1.794
1.831
1.874
1.927
1.988
2.059
2.14
2.234
2.339
2.451
2.572
2.7
2.833
2.974
3.12
3.277
3.444
3.634
3.849
4.086
4.318
4.525
4.686
4.805
4.888
4.941
4.977
4.999
5.012
5.02
5.021
5.02
5.018
5.015
3.587;
5.009
5.01
5.009
5.012
5.016
5.021
5.029
5.04
5.052
5.065
5.079
5.095
5.115
5.134
5.156
5.179

3.835;
3.88;
3.928;
3.979;
4.031;
4.088;
4.149;
4.211;
4.278;
4.35;
4.426;
4.506;
4.59;
4.678;
4.764;
4.849;
4.933;
5.011;
5.082;
5.148;
5.206;
5.257;
5.304;
5.344;
5.381;
5.414;
5.435;
5.439;
5.395;
5.301;
5.158;
4.989;
4.812;
4.639;
4.48;
4.335;
4.204;
4.086;
3.979;
3.885;
3.798;
3.72;
3.65;
3.529;
3.477;
3.429;
3.386;
3.346;
3.31;
3.275;
3.242;
3.211;
3.182;
3.154;
3.128;
3.103;
3.079;
3.058;
3.039;

0.3388
0.3406
0.3425
0.3444
0.3463
0.3483
0.3502
0.3522
0.3542
0.3563
0.3583
0.3604
0.3625
0.3647
0.3668
0.369
0.3712
0.3734
0.3757
0.378
0.3803
0.3827
0.385
0.3875
0.3899
0.3924
0.3949
0.3974
0.4 5.57
0.4025
0.4052
0.4078
0.4105
0.4133
0.4161
0.4189
0.4217
0.4246
0.4275
0.4305
0.4335
0.4366
0.4397
0.4428
0.446
0.4492
0.4525
0.4558
0.4592
0.4626
0.4661
0.4696
0.4732
0.4769
0.4806
0.4843
0.4881
0.492
0.4959
0.4999

5.204
5.231
5.261
5.296
5.336
5.383
5.442
5.515
5.61
5.733
5.894
6.089
6.308
6.522
6.695
6.796
6.829
6.799
6.709
6.585
6.452
6.316
6.185
6.062
5.948
5.842
5.744
5.654
0.387;
5.493
5.42
5.349
5.284
5.222
5.164
5.109
5.058
5.009
4.961
4.916
4.872
4.831
4.791
4.753
4.718
4.682
4.648
4.615
4.583
4.553
4.522
4.495
4.466
4.442
4.416
4.391
4.367
4.343
4.32
4.298

3.021;
3.007;
2.995;
2.987;
2.983;
2.984;
2.989;
2.999;
3.014;
3.026;
3.023;
2.982;
2.881;
2.705;
2.456;
2.169;
1.87;
1.577;
1.321;
1.11;
0.945;
0.815;
0.714;
0.63;
0.561;
0.505;
0.456;
0.416;
0.355;
0.329;
0.313;
0.291;
0.269;
0.255;
0.244;
0.228;
0.211;
0.203;
0.194;
0.185;
0.185;
0.17;
0.163;
0.149;
0.149;
0.133;
0.131;
0.13;
0.131;
0.134;
0.12;
0.12;
0.09;
0.094;
0.083;
0.079;
0.077;
0.073;
0.073;

0.504
0.5081
0.5123
0.5166
0.5209
0.5254
0.5299
0.5344
0.5391
0.5438
0.5486
0.5535
0.5585
0.5636
0.5687
0.574
0.5794
0.5848
0.5904
0.5961
0.6019
0.6078
0.6138
0.6199
0.6262
0.6326
0.6391
0.6458
0.6526
0.6595
0.6666
0.6738
0.6812
0.6888
0.6965
0.7045
0.7126
0.7208
0.7293
0.738
0.7469
0.756
0.7653
0.7749
0.7847
0.7948
0.8051
0.8157
0.8266
0.83 3.662
0.84 3.656
0.85 3.65
0.86 3.644
0.87 3.638
0.88 3.632
0.89 3.626
0.9 3.62
0.91 3.614
0.92 3.608
0.93 3.602

4.277 0.066;
4.255 0.072;
4.235 0.06;
4.215 0.06;
4.196 0.056;
4.177 0.053;
4.159 0.043;
4.14
0.045;
4.123 0.048;
4.106 0.044;
4.089 0.044;
4.073 0.032;
4.057 0.038;
4.042 0.032;
4.026 0.034;
4.012 0.03;
3.997 0.027;
3.983 0.03;
3.969 0.03;
3.956 0.027;
3.943 0.025;
3.931 0.025;
3.918 0.024;
3.906 0.022;
3.893 0.022;
3.882 0.019;
3.87
0.018;
3.858 0.017;
3.847 0.016;
3.837 0.016;
3.826 0.015;
3.815 0.014;
3.805 0.013;
3.796 0.013;
3.787 0.013;
3.778 0.012;
3.768 0.011;
3.761 0.011;
3.752 0.01;
3.745 0.01;
3.736 9.0000e-03;
3.728 9.0000e-03;
3.721 8.0000e-03;
3.714 8.0000e-03;
3.705 7.0000e-03;
3.697 7.0000e-03;
3.688 6.0000e-03;
3.681 6.0000e-03;
3.673 5.0000e-03;
4.2734e-03;
3.9505e-03;
3.6188e-03;
3.2850e-03;
2.9908e-03;
2.6821e-03;
2.4293e-03;
2.1916e-03;
1.9697e-03;
1.7571e-03;
1.5541e-03;

0.94 3.597
0.95 3.592
0.96 3.587
0.97 3.582
0.98 3.578
0.99 3.574
1
3.57
1.01 3.566
1.02 3.563
1.03 3.56
1.04 3.557
1.05 3.554
1.06 3.551
1.07 3.548
1.08 3.546
1.09 3.544
1.1 3.541
1.11 3.539
1.12 3.537
1.13 3.534
1.14 3.532
1.15 3.53
1.16 3.528
1.17 3.526
1.18 3.524
1.19 3.522
1.2 3.52
1.21 3.528
1.22 3.516
1.23 3.515
1.24 3.513
1.25 3.511
1.26 3.51
1.27 3.508
1.28 3.507
1.29 3.506
1.3 3.504
1.31 3.503
1.32 3.501
1.33 3.5
1.34 3.498
1.35 3.497
1.36 3.496
1.37 3.495
1.38 3.493
1.39 3.492
1.4 3.491
1.41 3.49
1.42 3.489
1.43 3.488
1.44 3.487
1.45 3.486
10 3.42
10.001
10.002

1.3689e-03;
1.1869e-03;
1.0237e-03;
8.7997e-04;
7.4788e-04;
6.2395e-04;
5.0930e-04;
4.1071e-04;
3.2386e-04;
2.4753e-04;
1.8704e-04;
1.3620e-04;
9.3631e-05;
6.8118e-05;
5.3285e-05;
4.0768e-05;
3.0637e-05;
2.3849e-05;
1.7825e-05;
1.3488e-05;
9.0718e-06;
6.2230e-06;
3.8770e-06;
2.0483e-06;
6.1036e-07;
3.4091e-07;
2.1008e-07;
1.2518e-07;
7.9609e-08;
4.6004e-08;
2.3682e-08;
9.9472e-09;
3.6096e-09;
2.0213e-09;
1.2223e-09;
7.2885e-10;
4.6553e-10;
2.8147e-10;
1.6807e-10;
8.4670e-11;
3.7322e-11;
1.8263e-11;
1.0823e-11;
7.3044e-12;
4.9418e-12;
2.7653e-12;
2.2282e-12;
1.6831e-12;
9.6050e-13;
8.7623e-13;
4.8128e-13;
3.6924e-13;
1.0000e-13;
3.42
1.0000e-13;
3.42
1.0000e-13;

}
RSSAbsorption
{ * K. Rajkanan, R. Singh, and J. Shewchun,
* Absorption Coefficient of Silicon for Solar Cell Calculations

* Solid-State Electronics 1979 Vol 22. pp793-795

Egone0 = 1.1557
# [eV]
Egtwo0 = 2.5 # [eV]
Egd0
= 3.2 # [eV]
Ep1
= 0.01827
# [eV]
Ep2
= 0.05773
# [eV]
C1
= 5.5 # [1]
C2
= 4
# [1]
A1
= 3.2310e+02
# [cm^-1 eV-2]
A2
= 7.2370e+03
# [cm^-1 eV-2]
Ad
= 1.0520e+06
# [cm^-1 eV-2]
RssBeta = 7.0210e-04
# [eV/K]
RssGamma
= 1.1080e+03
# [K]
}
Absorption
{ * Formula = 1:
* A = A1*exp((phE-E1)/E2),
for phE < E1
* = A1 + A2*((phE-E1)/E2)^P, for phE >= E1
* Formula = 2:
* A = A0*exp((phE-phE0)*ST),
for phE < phE0
* = AT*(2*ST*(phE-E0-(LN-0.5)/ST))^0.5, for phE >= phE0
* where
*
phE is a photon energy,
*
LN = log(AT/A0),
*
ST = S/(T+T0), T is a temperature,
*
phE0 = E0 + LN/ST.
Formula =
* Formula = 1:
A1
=
A2
=
E1
=
E2
=
P
=

# [1]

1.0000e+04
# [cm-1]
100 # [cm-1]
1.12 # [eV]
0.025 # [eV]
0.5 # [1]

}
MultiValley
{ * Arbitrary number of electron and hole valleys can be defined.
* Electron density is written as: n=Nc*sum{d_i*F1/2((Ef-Ec-dEc_i)/kT)},
* where dEc_i is energy shift, d_i is DOS factor (defined by valley masses
* and degeneracy) of valley i. To specify one valley the following format
* can be used (hValley for holes) eValley(m100,m010,m001,dE,g,alpha),
* where m100,m010,m001 are masses along crystal axis, dE is the valley energy
* shift in respect to band edge, g is degeneracy, alpha is non parabolicity
* parameter. With valley specification above the interface quantization mass
* will be compute automatically (using valley mass tensor and interface orient
ation),
* but with eValley(m100,m010,m001,dE,g,alpha,mq) the quantization mass mq will
* be independent of the interface orientation.
eValley(0.914, 0.196, 0.196, 0.0000e+00, 2, 0.5)
#[1,1,1,eV,1,eV
^-1]
eValley(0.196, 0.914, 0.196, 0.0000e+00, 2, 0.5)
#[1,1,1,eV,1,eV
^-1]
eValley(0.196, 0.196, 0.914, 0.0000e+00, 2, 0.5)
#[1,1,1,eV,1,eV
^-1]
hValley(0.16, 0.16, 0.16, 0.0000e+00, 1, 0.0000e+00)
#[1,1,1,eV,1,eV
^-1]
hValley(0.49, 0.49, 0.49, 0.0000e+00, 1, 0.0000e+00)
#[1,1,1,eV,1,eV
^-1]

}
LatticeParameters
{ * Crystal system, elasticity, and deformation potential are defined.
* X and Y vectors define the simulation coordinate system relative to the
* crystal orientation system. Also there is an option to represent the crystal
* system relative to the simulation one. In this case a keyword CrystalAxis
* has to be in this section and X and Y vectors will represent [100] and [010]
* axis of the crystal system in the simulation one.
* Additional notes: 1 Pa = 10 dyn/cm^2; tensile stress/strain is positive.
*
* S[i][j] - elasticity modulus; i,j = 1,2,...6 and j>=i.
* CrystalSystem is symmetry, used ONLY to define the elasticity matrics.
* Cubic (CrystalSystem=0): S[1][1],S[1][2],S[4][4]
* Hexagonal (CrystalSystem=1): S[1][1],S[1][2],S[1][3],S[3][3],S[4][4]
* NC is a number of conduction band levels taken into account
* NV is a number of valence band levels taken into account
* DC2(l) defines deformation potentials for conduction subband = l
* DV2(l) defines deformation potentials for valence subband = l
* The subband energy shift due to strain (E) is equal to the following sum:
* D2[1]*E11 + D2[2]*E22 + D2[3]*E33 +
* D2[4]*(0.5*D2[5]^2*((E11-E22)^2+(E22-E33)^2+(E33-E11)^2)+D2[6]^2*(E23^2+E13^
2+E12^2))
*
X
= (1, 0.0000e+00, 0.0000e+00) #[1]
Y
= (0.0000e+00, 1, 0.0000e+00) #[1]
S[1][1] = 0.77 # [1e-12 cm^2/din]
S[1][2] = -2.1000e-01 # [1e-12 cm^2/din]
S[4][4] = 1.25 # [1e-12 cm^2/din]
CrystalSystem = 0
# [1]
NC
= 3
# [1]
NV
= 2
# [1]
DC2(1) = 0.9, -8.6000e+00, -8.6000e+00, 0.0000e+00, 0.0000e+00, 0.0000e
+00
#[eV]
DC2(2) = -8.6000e+00, 0.9, -8.6000e+00, 0.0000e+00, 0.0000e+00, 0.0000e
+00
#[eV]
DC2(3) = -8.6000e+00, -8.6000e+00, 0.9, 0.0000e+00, 0.0000e+00, 0.0000e
+00
#[eV]
DV2(1) = -2.1000e+00, -2.1000e+00, -2.1000e+00, -1.0000e+00, 0.5, 4
#[eV]
DV2(2) = -2.1000e+00, -2.1000e+00, -2.1000e+00, 1, 0.5, 4
#[eV]
* Deformation
xis
dbs
xiu
xid

potentials of k.p model for electron bands

= 7
# [eV]
= 0.53 # [eV]
= 9.16 # [eV]
= 0.77 # [eV]

* Deformation
adp
bdp
ddp
dso

potentials of k.p model for hole bands

= 2.1 # [eV]
= -2.3300e+00 # [eV]
= -4.7500e+00 # [eV]
= 0.044 # [eV]

* Luttinger parameters and Sverdlov's k.p theory parameter

gamma_1 = 4.27 # [1]
gamma_2 = 0.315 # [1]
gamma_3 = 1.4576
# [1]
Mkp
= 1.2 # [1]
}

StressMobility
{ * Strain-induced modification of the electron mobility is proposed by J.L.Egle
y:
* fe_i = 1+(1-me_lt)/(1+2me_lt)*(F1/2((Efe-dEc_i)/kT)/F1/2((Efe-dEc)/kT)-1),
* where
* fe_i is a multiplication factor of electron mobility in direction i
* Efe is quesi-Fermi levels of electrons
* dEc_i is an energy shift of electron subband which is parallel to directio
n i
* dEc is a total effective shift of the conduction band
* F1/2() is the Fermi integral of order 1/2
* T is the lattice temperature
*
* me_lt is the ratio of the longitudinal and transverse effective masses
* elec_100, elec_010, elec_001 are indexes of corresponding electron subband
s in LatticeParameters
me_lt = 4.81 # [1]
elec_100
= 1
# [1]
elec_010
= 2
# [1]
elec_001
= 3
# [1]
*
* Intervalley scattering model suggested in IEEE Trans.on ED, v.52, n.4, 2005,
p.527
* Mobility factor is 1/(1+(r(Ephonon)-1)(1-beta^-1)/(1+(Ndop/Nref)^alpha)),
* where r(Ephonon) is relaxatiom time ratio due to change of intervalley sactt
ering
Ephonon = 0.06 # [eV]
beta
= 1.22 # [1]
beta_mlda
= 1.5 # [1]
Nref
= 2.0000e+17
# [cm^-3]
alpha = 0.65 # [1]
*
* Stress-induced change of delta2 electron mass proposed by TU Vienna.
* The model is based on 2 band k.p theory for electron bands,
* k.p parameters of the model are defined in LatticeParameters section.
* me_l0 and me_t0 are unstressed longitudinal and transverse effective masses:
me_l0 = 0.914 # [1]
me_t0 = 0.196 # [1]
*
* Stress-induced hole mobility model is proposed by Intel:
* the hole band structure in 100 plane is described by two ellipsoids directed
in
* 110 and -110 directions, the multiplication factor of hole mobility in 110 d
irection
* is the following:
*
fh_110 = (f_110/mh_l0+f_'110/mh_t'110)/(0.5/mh_l0+0.5/mh_t0),
* where:
* f_110 = 1/(1+exp(delta/kT), f_'110 = 1/(1+exp(-delta/kT) - occupation of
*
the ellipsoids if just two (ne) considered in the hole band
* mh_l0 is the hole longitudinal mass in the ellipsoid at no stress
* mh_t0 is the hole transverse mass in the ellipsoid at no stress
* delta is stress-induced energy split between the ellipsoids
*
* delta = d1*s
* mh_t110 = mh_t0/(1-st1*s+st2*s^2+bt1*b+bt2*b^2)
* mh_t'110 = mh_t0/(1+st1*s+st2*s^2+bt1*b+bt2*b^2)
*
(s is shear and b is biaxial components of the stress)
*
* Modification of the Intel model:

*
*
*

1) considered three 100 plans (6 ellipsoids)

2) ne is number of ellipsoids in the occupation functions fh*
3) considered mass in 100 direction: mh_t100 = mh_t0/(1+btt*b)
mh_l0 = 0.48 # [1]
mh_t0 = 0.15 # [1]
ne
= 2
# [1]
d1
= -6.0000e-11 # [eV/Pa]
st1
= -9.4426e-10 # [1/Pa]
st2
= 4.3066e-19
# [1/Pa^2]
bt1
= -1.0086e-10 # [1/Pa]
bt2
= 6.5886e-21
# [1/Pa^2]
btt
= 1.2000e-10
# [1/Pa]

}
Piezoresistance
{ * The first order piezoresistance mobility model computes an anisotropic
* factor applied to total mobility. According to Kanda's model the piezoresist
ance
* coefficients are splitted on constant and variable (to doping) parts:
p11var = -1.0260e-09 , 1.5000e-11
# [1/Pa]
p12var = 5.3400e-10 , 1.5000e-11
# [1/Pa]
p44var = -1.3600e-10 , 1.1000e-09
# [1/Pa]
p11con = 0.0000e+00 , 5.1000e-11
# [1/Pa]
p12con = 0.0000e+00 , -2.6000e-11
# [1/Pa]
p44con = 0.0000e+00 , 2.8000e-10
# [1/Pa]

*
*
*
*
*
*
*
*
*
*
*
*
*

The second order piezoresistance mobility model computes an isotropic

mobility enhancement factor for low-field mobility. The model transforms
the first- and second-order piezoresistance tensors (with Voigt notation
components pij and pijk, respectively) from the crystal system to the
simulation system, and then computes piezoconductance tensor components
using the relations:
cij = -p'ij
cijk = -p'ijk + p'ij * p'ik;
where p'ij and p'ijk represent the transformed piezoresistance components.
The mobility enhancement factor is then computed from:
f1 = 1 + summation[c1j * Sj] + summation[c1jk * Sj * Sk]
where Sj represents the stress components in the simulation system.
That is, Sj = Sxx, Syy, Szz, Syz, Sxz, Sxy for j = 1, 2, 3, 4, 5, 6.
p11
= -1.1000e-09 , 0.0000e+00
# [1/Pa]
p12
= 4.5000e-10 , 2.0000e-11
# [1/Pa]
p44
= 2.5000e-10 , 1.1900e-09
# [1/Pa]
p111
= 6.6000e-19 , -4.5000e-19
# [1/Pa^2]
p112
= -5.5000e-20 , 2.8000e-19
# [1/Pa^2]
p122
= -2.2000e-20 , -2.5000e-19
# [1/Pa^2]
p123
= 8.8000e-19 , 2.0000e-20
# [1/Pa^2]
p144
= 1.0000e-20 , -3.3000e-19
# [1/Pa^2]
p166
= -6.9000e-19 , 6.6000e-19
# [1/Pa^2]
p661
= 6.0000e-21 , -3.1000e-19
# [1/Pa^2]
p456
= 2.0000e-20 , -3.0000e-19
# [1/Pa^2]
p441
= 2.0000e-20 , 0.0000e+00
# [1/Pa^2]

*
*
*
*

The stress dependent mobility enhancement limits set lower and upper limits
for the mobility enhancement factor calculated with any of the stress
dependent mobility models. The lower limit is used to prevent negative
mobility. The upper limit is used to prevent an unrealistic enhancement.
MinStressFactor
= 1.0000e-05 , 1.0000e-05
# [1]
MaxStressFactor
= 10 , 10
# [1]

}
done.
Wed Feb 1 11:46:38 2012: checked in 1 sdevice license(s)
Wed Feb 1 11:46:38 2012: checked in 1 Dessis license(s)