Data Sheet: 860 MHZ, 34 DB Gain Push-Pull Amplifier
Data Sheet: 860 MHZ, 34 DB Gain Push-Pull Amplifier
DATA SHEET
dbook, halfpage
M3D252
BGY888
860 MHz, 34 dB gain push-pull
amplifier
Product specification
Supersedes data of 1999 Mar 30
2001 Oct 25
NXP Semiconductors
Product specification
BGY888
PINNING SOT115J
Excellent linearity
PIN
DESCRIPTION
High gain
input
2, 3
common
+VB
7, 8
APPLICATIONS
common
output
DESCRIPTION
Hybrid high dynamic range amplifier module operating
with a voltage supply of 24 V in a SOT115J package. The
high gain module consists of two cascaded stages both in
cascode configuration.
Side view
MSA319
PARAMETER
CONDITIONS
power gain
total current consumption (DC)
MIN.
MAX.
UNIT
f = 50 MHz
33.5
34.5
dB
f = 860 MHz
34
dB
VB = 24 V
340
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Vi
RF input voltage
55
dBmV
Tstg
storage temperature
40
+100
Tmb
20
+100
2001 Oct 25
NXP Semiconductors
Product specification
BGY888
CHARACTERISTICS
Table 1
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
Gp
power gain
f = 50 MHz
33.5
34
f = 860 MHz
34
35
dB
SL
f = 40 to 860 MHz
0.5
1.1
2.5
dB
FL
f = 40 to 860 MHz
0.2
0.5
dB
S11
S22
34.5
UNIT
dB
f = 40 to 80 MHz
20
25
dB
f = 80 to 160 MHz
18.5
28
dB
17
28
dB
15.5
21
dB
14
18.5
dB
f = 40 to 80 MHz
20
25.5
dB
f = 80 to 160 MHz
18.5
28.5
dB
17
26.5
dB
15.5
20.5
dB
14
21
dB
S21
phase response
f = 50 MHz
135
225
deg
CTB
63.5
60
dB
Xmod
cross modulation
63
59
dB
CSO
64
55
dB
d2
note 1
74
65
dB
Vo
output voltage
58
60
dBmV
noise figure
f = 50 MHz
4.5
dB
f = 550 MHz
dB
f = 600 MHz
dB
f = 650 MHz
5.5
dB
f = 750 MHz
dB
f = 860 MHz
5.5
dB
note 3
325
340
mA
Itot
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 805.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 860.5 MHz.
2. Measured according to DIN45004B:
fp = 851.25 MHz; Vp = Vo;
fq = 858.25 MHz; Vq = Vo6 dB;
fr = 860.25 MHz; Vr = Vo 6 dB;
measured at fp + fq fr = 849.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Oct 25
NXP Semiconductors
Product specification
BGY888
SYMBOL
Gp
PARAMETER
power gain
CONDITIONS
MIN.
TYP.
MAX.
UNIT
f = 50 MHz
33.5
34
34.5
dB
f = 860 MHz
34
35
dB
2.5
dB
SL
f = 40 to 860 MHz
0.5
1.1
FL
f = 40 to 860 MHz
0.2
0.5
dB
S11
f = 40 to 80 MHz
20
25
dB
f = 80 to 160 MHz
18.5
28
dB
17
28
dB
15.5
21
dB
14
18.5
dB
f = 40 to 80 MHz
20
25.5
dB
f = 80 to 160 MHz
18.5
28.5
dB
17
26.5
dB
15.5
20.5
dB
14
21
dB
S22
S21
phase response
f = 50 MHz
135
225
deg
CTB
47.5
46
dB
Xmod
cross modulation
53.5
50
dB
CSO
56
48
dB
d2
note 1
74
65
dB
Vo
output voltage
58
60
dBmV
noise figure
see Table 1
dB
Itot
note 3
325
340
mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 805.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 860.5 MHz.
2. Measured according to DIN45004B:
fp = 851.25 MHz; Vp = Vo;
fq = 858.25 MHz; Vq = Vo 6 dB;
fr = 860.25 MHz; Vr = Vo 6 dB;
measured at fp + fq fr = 849.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Oct 25
NXP Semiconductors
Product specification
BGY888
SYMBOL
Gp
PARAMETER
power gain
CONDITIONS
MIN.
TYP.
MAX.
UNIT
f = 50 MHz
33.5
34
34.5
dB
f = 750 MHz
34
dB
SL
f = 40 to 750 MHz
0.2
2.2
dB
FL
f = 40 to 750 MHz
0.45
dB
S11
f = 40 to 80 MHz
20
25
dB
f = 80 to 160 MHz
18.5
28
dB
17
28
dB
15.5
21
dB
14
18.5
dB
f = 40 to 80 MHz
20
25.5
dB
f = 80 to 160 MHz
18.5
28.5
dB
17
26.5
dB
15.5
20.5
dB
14
21
dB
S22
S21
phase response
f = 50 MHz
135
225
deg
CTB
52.5
50
dB
Xmod
cross modulation
55.5
51
dB
CSO
61.5
53
dB
d2
note 1
65
dB
Vo
output voltage
59
dBmV
noise figure
see Table 1
dB
Itot
note 3
325
340
mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 691.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 746.5 MHz.
2. Measured according to DIN45004B:
fp = 740.25 MHz; Vp = Vo;
fq = 747.25 MHz; Vq = Vo6 dB;
fr = 749.25 MHz; Vr = Vo 6 dB;
measured at fp + fq fr = 738.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Oct 25
NXP Semiconductors
Product specification
BGY888
SYMBOL
Gp
PARAMETER
power gain
CONDITIONS
MIN.
TYP.
MAX.
UNIT
f = 50 MHz
33.5
34
34.5
dB
f = 600 MHz
34
dB
SL
f = 40 to 600 MHz
dB
FL
f = 40 to 600 MHz
0.35
dB
S11
f = 40 to 80 MHz
20
25
dB
f = 80 to 160 MHz
18.5
28
dB
17
28
dB
16
21
dB
f = 40 to 80 MHz
20
25.5
dB
S22
f = 80 to 160 MHz
18.5
28.5
dB
17
26.5
dB
16
20.5
dB
S21
phase response
f = 50MHz
135
225
deg
CTB
56.5
55
dB
Xmod
cross modulation
58
54
dB
CSO
69.5
56
dB
d2
note 1
68
dB
Vo
output voltage
61
dBmV
see Table 1
dB
Itot
note 3
325
340
mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 541.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 596.5 MHz.
2. Measured according to DIN45004B:
fp = 590.25 MHz; Vp = Vo;
fq = 597.25 MHz; Vq = Vo 6 dB;
fr = 599.25 MHz; Vr = Vo 6 dB;
measured at fp + fq fr = 588.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Oct 25
NXP Semiconductors
Product specification
BGY888
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
A2
1
A
L
F
S
W
w M
e1
d
U2
q2
y M B
q1
x M B
y M B
p
U1
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
mm 20.8
9.5
OUTLINE
VERSION
D
max.
E
max.
e1
L
min.
4.15
2.04
0.51
0.25 27.2
13.75 2.54 5.08 12.7 8.8
3.85
2.54
0.38
REFERENCES
IEC
JEDEC
JEITA
q1
q2
U1
U2
2.4 38.1 25.4 10.2 4.2 44.75 8.2 6-32 0.25 0.7
44.25 7.8 UNC
EUROPEAN
PROJECTION
Z
max.
0.1
3.8
ISSUE DATE
04-02-04
10-06-18
SOT115J
2001 Oct 25
Q
max.
NXP Semiconductors
Product specification
BGY888
PRODUCT
STATUS(2)
DEFINITION
Development
This document contains data from the objective specification for product
development.
Qualification
Production
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
DEFINITIONS
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
2001 Oct 25
NXP Semiconductors
Product specification
2001 Oct 25
BGY888
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
R77/05/pp10