Semiconductor Applications
Semiconductor Applications
Semiconductor Applications
Semiconductor Applications
Katashi Masumoto
The Research Institute for Electric and Magnetic Materials,
2-1-1 Yagiyama Minami, Taihaku-ku, Sendai 982-0807, Japan
Akinori Katsui
School of High-Technology for Human Welfare, Department of Materials Science and Technology,
Tokai University, 317 Nishino, Numazu, Shizuoka 401-0321, Japan
Takashi Matsuoka
NTT Basic Research Laboratories, Nippon Telegraph and Telegraph Corporation, 3-1 Wakamiya
Morinosato, Atsugi, Kanagawa 243-0198, Japan
1. Introduction
Magnetic, Electrical and Optical Applications of Intermetallic Compounds. Edited by J. H. Westbrook and R. L. Fleischer 1995,
2000 John Wiley & Sons Ltd
Cation
Anion
high for obtaining the required properties as semiconductors, although their prices are extremely high.
Yet there is more and more demand for compound
semiconductor devices in all kinds of industries;
therefore, material preparation technology is advancing
steadily into the first stages of commercial production.
The III-V semiconducting compounds are in the most
advanced stage of research and development, as a result
of long-term studies of their physicochemical and
electronic properties. They are now the most promising
electronic materials. Particularly advanced materials in
Quotes are used here to distinguish this type of material from the
superlattice of the metallurgist, an ordered array of atoms formed from
a disordered binary (or higher) solid-solution alloy.
e/a
16
32
e
4
8
16
Figure 2. Induction to binary, ternary, and quaternary semiconducting compounds with diamond structure (e = number of valence
electrons for the atoms, e/a = the electron to atom ratio, n = vacancy)
describes examples of such compounds, their characteristics, and recent related research and development.
Section 3 presents examples and recent applied studies
of electronic devices. Section 4 covers optical devices,
and Section 5 other devices including magnetoelectric
devices. Finally, Section 6 summarizes these
developments and considers future problems.
Epitaxial layer
Substrate
GaP
GaAs
GaP:Zn, O
GaPrN
GaP
GaP
GaAs 0 - 1 5 P 0 ^N
GaAsO35Po.65:N
GaAs
GaAs 0 6 P 0 4
Ga
ii-vi
IV-IV
1-IH-VI2
IV-VI
GaAlAs
GaAs
InP
Sapphire
ZnSe
GaAs
ZnS
GaP
SiC
GaAs, GaP
PbSe, PbTe
'Commercially available.
O.65 A 1 O.35 A s
Ga065Al035As(DH)
GaAlInP
GalnAsP/InP
GaN
ZnSe
ZnSe, ZnS
ZnS
SiC
CuAlS2, CuGaS2
PbSnSe, PbSnTe
Device
LED (red)"
LED (yellow)0
LED (green)*
LED (yellow)*
LED (yellow)0
LED (orange)0
LED (0.8-0.9/*m)
LED (red)
LED, LD (red, ~0.9/tm)
LED (red)
LD (-0.6 ^m)
LD, LED (1.3-1.6 jim)
LED (blue)0
LED (blue)0
LED, LD (blue)
LED (blue)0
LED (blue)
LED (blue)
LED (visible)
LD (>10|im)
Commercially
available
Maximum
observed
-4
0.3
0.15
0.1
0.12
0.3
15
0.7
0.2
0.2
-3
-15
0.2
7
21
3.2
9.1
1.3
0.25
0.65
0.04
0.05
GaAs
InP
InAs
InSb
AlN
BN (cubic)
E% (eV) at 300 K
Transition type
Recombination coefficient
1.43
Direct
1.35
Direct
0.36
Direct
0.18
Direct
5.9
Direct
8.0
Indirect
1.26X10 9
8.5XlO" 11
4.58XlO- 11
4500
4.5 XlO4
33 000
1.5 XlO5
80 000
IxIO6
14 (/*h)
0.2 (500 K)
1.14X10 1 2
12.5
2.35 XlO" 12
18.7
5xl012
12.1
0.68
1343
540
0.273
1215
380
0.166
798
220
3.2
-2723
1200
(Cm 2 S 1 )
7.2IxIO- 1 0
Hall mobility /xe (cm2 V 1 s"1)
300K
8500
77 K
Surface recombination velocity
(cms" 1 )
2 XlO7
Dielectric constant (C/N)
~2.7xl012
Relative permittivity e/e0
12.9
Thermal conductivity
1
1
(W cm" deg" )
0.455
Melting point (K)
1511
2
Hardness (kg mm )
750
IxIO3
13
>2973
7300-10 000
PbS
PbSe
PbTe
SnS
SnSe
SnTe
0.59362
0.6147
0.6461
59.9
62.98
8.15
8.25
a-0.599, b = 0.434,
c=l. 120
5.08
6.18
6.51
20
0.14
1.6
18-20
0.15
2.0
428
32.6
30
1190
0.22
0.22
0.19
0.18
21
0.18
20
Density (g cm " 3 )
7.59
Volume dilatation coefficient
(1(T 6 K- 1 )
20
Specific heat ( J g 1 K 1 )
0.14
1
1
Thermal conductivity (W m K" ) 2.5
Permittivity e
Vickers hardness (kg mm 2)
Melting point (K)
Band gap (eV) at 77 K
Effective mass
1349
0.30
0.2
1076
0.22
0.27
1154
-1.08*
"In these semimetals a negative band gap implies an overlap of the conduction and valence bands.
1133
-0.9
0.15
35.9
62
1079
-0.27
0.256
materials of Bi2Te3 have been fabricated by the hotpressing technique (Ohsugi et al.9 1989). A maximum
figure of merit for n-type Bi2Te2 85Se015 of up to
3.7XlO - 3 K 1 , perpendicular to the pressing direction,
has been achieved, which is much higher than that of
single crystals (Kaibe, 1989; Kaibe et al., 1989).
These sintered materials are quite suitable for very
small thermomodule applications, for example, for
building cooling modules for optical communication
devices and equipment for semiconductor processing, etc.
2.6 Transition Metal Silicide Semiconductors
Transition metal silicides, which have been investigated
mainly as refractory materials, have interesting physical
and chemical properties owing to the continuous
changes in the valences of the transition metal atoms.
CrSi2, MnSi2_x (0.273^ x^0.250) and /3-FeSi2 are
semiconductors developed as thermoelectric conversion
materials for use at temperatures above 1200K (see
Vedernikov, Chapter 20 in this volume). Their heatresistant properties are attractive, even though the
thermoelectric power of these materials is not as large
as that of the chalcogenide thermoelectric materials, and
their electrical conductivities are comparatively high.
Of all the silicides, a degenerate semiconductor of ptype CrSi2 with a hole concentration of 1020cm~3 has
superior heat resistance and is used for a highperformance thermoelectric leg (Nishida, 1972). Also,
nonstoichiometric MnSi2 _x is a p-type, degenerate
semiconductor (Nishida, 1972; Kawasumi et al.9 1981).
It is noted that /3-FeSi2 becomes p-type by doping with
Mn and/or Al (Nishida, 1973) and n-type with Co
atoms. These materials have found use in highperformance, high temperature applications (Ware and
McNeill, 1964).
On the other hand, the thermoelectric performance
of the semimetal CoSi (its conduction and valence bands
overlap by about 0.02 eV) is inferior to that of the
silicides mentioned above; it is an n-type material with
a comparatively large thermoelectric power (Asanabe
et al., 1964). When this material is combined with ptype CrSi2, one can obtain a CoSi-CrSi2 thermocouple. As with the previously mentioned silicides,
including FeSi2, mass production technology is established (Tokushima et al.t 1972; Uemura and Nishida,
1988), and developmental research on these materials
is now in progress for thermoelectric generator
applications. Since the electric power of these thermocouples is sufficient for power supplies for safety devices
for gas and petroleum combustion instruments and so
on, various ideas have been proposed in this field.
A site
B site
Anion
a (A)
U
(lA = 0.1nm) parameter0
8.596
Magnetic
moment
(4.2 K)foeper
molecule)
0.396
CdCr2S4
CdCr2Se4
HgCr2S4
HgCr2Se4
MnCr2S4
FeCr2S4
CoCr2S4
CuCr2S4
CuCr2Se4
CuCr2Te4
ZnCr2O4
ZnCr2S4
10.239
10.745
10.244
10.743
10.108
9.989
9.916
9.822
10.337
11.137
8.328
9.983
0.375
0.383
0.392
0.390
0.387
0.385
0.382
0.381
0.380
0.379
0.387
0.385
ZnCr2Se4
10.443
0.384
5.55
5.94
5.35
5.64
1.27
1.6
2.4
4.58
4.94
4.93
Curie point
Tc
(K)
Antiferromagnetic,
Neel point TN = 9 K
86
121
36
110
80
192
235
420
460
365
T N = 16 K
TN=18K
TN = 2 3 K
Asymptotic
Curie point
Resistivity
(room temperature)
(ficm)
(K)
-83
+ 152
+ 204
+ 137
+ 192
-12+10
-234+14
-390 40
+ 390
+ 465
+ 400
-392
+ 18
+ 115
The u parameter gives the lattice site of the anion (ideally u = 0.375, see Figure 3).
~10
-104
~10 9
~10 3
~1(T 4
~io- 4
~10~ 4
Magnetic
type
Antiferromagnetic
Ferromagnetic
Ferromagnetic
Ferromagnetic
Ferromagnetic
Ferrimagnetic
Ferrimagnetic
Ferrimagnetic
Ferromagnetic
Ferromagnetic
Ferromagnetic
Antiferromagnetic
Antiferromagnetic
Conduction
mode
Semiconductor
Semiconductor
Semiconductor
Semiconductor
Semiconductor
Semiconductor
Semiconductor
Metallic
Metallic
Metallic
Semiconductor
Semiconductor
Semiconductor
3. Electrical Applications
InSb
InAs
GaSb
InP
GaAs
Ge
Si
0.18
0.228
0.64787
4.59
0.36
0.41
0.6058
4.9
0.67
0.80
0.6095
4.06
1.35
1.40
0.58687
4.38
1.43
1.47
0.5653
4.07
0.665
0.7343
0.5658
4.13
1.107
1.1532
0.54198
4.01
0.024
0.41
0.041
0.26
0.0810
0.56
0.0667
0.71
0.0815
0.32
0.1905
0.50
0.0139
0.32
Hall mobility at 300 K (cm2 V- 1 s"1)
80 000
450
/*H
IxIO6
Zi6(Cm2V"1 s"1) at 77 K
Saturation drift velocity vm
5.2 XlO7
(cms1)
5.6 XlO2
Saturation field Em (V c m 1 )
Intrinsic carrier concentration
2 XlO16
nx ( c m 3 ) 300K
77 K
3.8 XlO9
m
33 000
450
1.5 XlO5
4000
1420
4500
150
4.5 XlO4
8500
435
3800
1800
3.6 XlO4
1450
500
2.4 XlO4
3.2 XlO7
4 XlO3
<6xlO6
2.3 XlO7
1.2X104
1.7-2.OxIO 7
5.2 XlO3
6 XlO6
4 XlO3
IXlO 7
2 XlO4
1 x 1015
3.5 XlO3
2.7 XlO12
1.4 XlO7
1.2 XlO7
1.8X1013
1.2 XlO10
Source
Depletion
layer
Drain
Gate
Layer of
n-type
Semi-insulating
GaAs
Semi-insulating
GaSa
(a) MESFET
Source
Drain
Gate
Source
Gate
Drain
Epitaxial
film
Semi-insulating GaAs
Channel layer
Semi-insulating GaAs
Channel layer
Metal
Substrate
Figure 5. Comparison of MESFET and heterojunction gate FET (upper, structures; lower, schematic band diagrams near the gates)
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