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VLSI Design: Introduction To Digital Integrated Circuits

This document is a lecture on VLSI design that covers CMOS transistor models, the BSIM model, and the VLSI design flow. It discusses the basic structure of nMOS and pMOS transistors and their operation. It also covers multi-gate MOSFETs like FinFETs and their advantages over traditional planar transistors. The document provides an overview of the BSIM family of compact transistor models developed by UC Berkeley and discusses some of the ongoing challenges and metrics important to digital integrated circuit design like cost, reliability, speed, and power.

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91 views16 pages

VLSI Design: Introduction To Digital Integrated Circuits

This document is a lecture on VLSI design that covers CMOS transistor models, the BSIM model, and the VLSI design flow. It discusses the basic structure of nMOS and pMOS transistors and their operation. It also covers multi-gate MOSFETs like FinFETs and their advantages over traditional planar transistors. The document provides an overview of the BSIM family of compact transistor models developed by UC Berkeley and discusses some of the ongoing challenges and metrics important to digital integrated circuit design like cost, reliability, speed, and power.

Uploaded by

Love Fahad
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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VLSI Design

Introduction to Digital Integrated


Circuits
Dr. Imran Khan
Lecture 3

University of Engineering and Technology


Taxila
31 August 2016

VLSI Design

Slide 1

Outline
CMOS Transistor Models
BSIM Model
VLSI Design Flow

Slide 2

CMOS transistors
3 terminals in CMOS transistors:
G: Gate
D: Drain
S: Source

nMOS transistor/switch
X=1 switch closes (ON)
X=0 switch opens (OFF)

pMOS transistor/switch
X=1 switch opens (OFF)
X=0 switch closes (ON)
Slide 3

VLSI Design

Slide 4

Slide 5

VLSI Design

Slide 31

VLSI Design

Slide 7

VLSI Design

Slide 8

Multi-gate MOSFET and FinFET


The way of eliminating deep leakage paths is to provide gate
control from more than one side of the channel.
The Si film is very thin so that no leakage path is far from one
of the gates.
Because there are more than one gates, the structure may be
called multi-gate MOSFET.

Source

Tox

Gate 1

Vg

Si

Drain

TSi

Gate 2

double-gate MOSFET
VLSI Design

Slide 9

Various Multi-gate Transistor Architectures


Supported in BSIM-CMG

VLSI Design

Slide 10

Variations of FinFET

Short
FinFET

Tall
FinFET

Nanowire
FinFET

Tall FinFET has the advantage of providing a large W and therefore


large Ion while occupying a small footprint.
Short FinFET has the advantage of less challenging lithography and
etching.
Nanowire FinFET gives the gate even more control over the silicon
wire by surrounding it.
VLSI Design

Slide 11

VLSI Design

Slide 12

BSIM family of compact transistor models


developed by UC Berkeley
BSIM stands for Berkeley Short Channel IGFET Model. Developed by UC
Berkeley in 1990.

VLSI Design

Slide 13

VLSI Design

Slide 14

VLSI Design

Slide 15

Summary
Digital integrated circuits have come a long
way and still have quite some potential left for
the coming decades
Some interesting challenges ahead

Getting a clear perspective on the challenges

Understanding the design metrics that govern


digital design is crucial
Cost, reliability, speed, power and energy
dissipation

VLSI Design

Slide 16

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