Scribd
Upload
122 views14 pages

Utc PD

This document summarizes the operation and characteristics of unitraveling-carrier photodiodes (UTC-PDs). UTC-PDs use only electrons as active carriers for higher speed and saturation current compared to conventional PIN photodiodes. The document outlines the band structure of UTC-PDs and discusses their advantages, including high speed, high output saturation, linearity, and ability to operate without a bias. Example digital applications like photoreceivers and optical gates and analog applications like high-power millimeter wave generation and signal sources are also summarized.

Uploaded by

Jognes Panasiewicz Junior
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
122 views14 pages

Utc PD

This document summarizes the operation and characteristics of unitraveling-carrier photodiodes (UTC-PDs). UTC-PDs use only electrons as active carriers for higher speed and saturation current compared to conventional PIN photodiodes. The document outlines the band structure of UTC-PDs and discusses their advantages, including high speed, high output saturation, linearity, and ability to operate without a bias. Example digital applications like photoreceivers and optical gates and analog applications like high-power millimeter wave generation and signal sources are also summarized.

Uploaded by

Jognes Panasiewicz Junior
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 14

UTC-PD

(Unitraveling-carrier photodiode)
2015.04.10

ITO, Hiroshi, et al. High-speed and high-output


InP-InGaAs unitraveling-carrier photodiodes.

Selected Topics in Quantum Electronics, IEEE


Journal of, 2004, 10.4: 709-727.

YONSEI
UNIVERSITY
YONSEI
UNIVERSITY

Contents(UTC-PD)
1.

UTC-PD operation(UTC-PD vs pin-PD)

2.

Device characteristics

3.

Digital, Analog application

4.

Conclusion
2

YONSEI
UNIVERSITY

UTC-PD operation (UTC-PD vs pin-PD)

Pin-PD characteristic

Both electrons and holes contribute to the response

Carrier velocity : hole < electron

Response : hole transport dominant

UTC-PD characteristic

Use of electrons as the only active carriers

Active part : absorption layer(p-type)

< Pin-PD band diagram >

p-type
n- type

+ carrier collection layer(lightly n-type]

Diffusion block layer : unidirectional motion of electrons

Band gap grading : reduce electron traveling time

< UTC-PD band diagram >

YONSEI
UNIVERSITY

UTC-PD operation (UTC-PD vs pin-PD)


Photocurrent
p-type

Mobile charge density


Modulate field profile

Electron
velocity
overshoot

UTC-PD advantage 1 : high speed


Electron diffusion time dominant
Large minority mobility of electron
in p-InGaAs
And design thin absorption layer
without sacrificing the RC charging
time

< Charge distribution, field, and band


bending at high carrier injection levels >

YONSEI
UNIVERSITY

UTC-PD operation (UTC-PD vs pin-PD)


Electric field
carrier velocity
charge storage
current saturation

< Pin-PD >

UTC-PD advantage 2 : higher saturation current


electron velocity overshoot >> hole velocity (pin-PD]

< UTC-PD >

YONSEI
UNIVERSITY

Device characteristics

Basic photoresponse

< pulse photoresponse of Pin-PD >

< pulse photoresponse of UTC-PD >

Slow tail caused by slow hole transport

High speed (advantage 1]

Low saturation output

Wide linearity

Slow response by space charge effect

UTC-PD advantage 3 : wide linearity

YONSEI
UNIVERSITY

Device characteristics

Bandwidth

UTC-PD advantage 1 : high speed


Large minority mobility of electron
in p-InGaAs
And design thin absorption layer
without sacrificing the RC charging
time

< UTC-PD frequency response >

Effect of self-induced field

= . ,

YONSEI
UNIVERSITY

Device characteristics

Zero-biased operation
maintained high electron velocity by the built-in field of the pn junction
Simple, small, light and less expensive system

Zero biased UTC-PD : restricted output


Solution : cascaded UTC-PD

Twice output voltage

< Schematic drawing of the cascade-twin UTC-PD >

UTC-PD advantage 4 : Zero-biased operation

YONSEI
UNIVERSITY

Digital application
1.

Photoreceiver

For ultra-high bitrate communications system


Wider bandwidth, simpler system, better sensitivity

YONSEI
UNIVERSITY

Digital application
2.

Ultrafast optical gate


Optical driver to overcome the speed limitation of electronic circuits
O-E-O type optical gate
UTC-PD supply sufficient voltage to drive the EAM
MSL : microstrip line
TW-EAM : electroabsorption modulator having a traveling wave electrode

10

YONSEI
UNIVERSITY

Analog application
1.

High-power millimeter wave generation


Key parameters : RC time constant & intrinsic carrier traveling time
Solution : matching circuit to overcome the RC time constant

< matching circuit integrated UTC-PD >

< UTC-PD performance >

< UTC-PD vs pin-PD >


Space charge effect

11

YONSEI
UNIVERSITY

Analog application
2.

Signal source for measurement systems


Use high frequency and very short electrical pulse generated by UTC-PD

3.

Transmitter for Fiber-radio communications system

4.

Nonlinear photonic up-conversion


Pin-PD based solution : low conversion efficiency

UTC-PD saturation

strong nonlinearity

12

high power frequency converter

YONSEI
UNIVERSITY

Conclusion
1.

UTC-PD operation

2.

UTC-PD characteristic
High speed, High output saturation current,
Linearity, Zero bias operation

3.

Digital/Analog application

Digital
Photoreceiver
Ultrafast optical gate
Analog

High-power millimeter generation


Signal source for measurement systems
Transmitter for Fiber-radio communications system
Nonlinear photonic up-conversion

13

YONSEI
UNIVERSITY

Thank you for listening


Q&A

14

YONSEI
UNIVERSITY

You might also like