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EEE3076: Power Electronics Tutorial 1: Overview of Power Semiconductor Switches

This document summarizes power semiconductor switches and their losses. It provides examples of calculating losses for various switches including a bipolar junction transistor (BJT), diode, thyristor, and BJT operating as a switch. The key losses calculated are conduction, switching, resistive and static losses. Formulas are provided to calculate minimum capacitor size to prevent accidental thyristor triggering due to high dv/dt. Total losses are provided for each example switch configuration.

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Faiz Azman
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39 views2 pages

EEE3076: Power Electronics Tutorial 1: Overview of Power Semiconductor Switches

This document summarizes power semiconductor switches and their losses. It provides examples of calculating losses for various switches including a bipolar junction transistor (BJT), diode, thyristor, and BJT operating as a switch. The key losses calculated are conduction, switching, resistive and static losses. Formulas are provided to calculate minimum capacitor size to prevent accidental thyristor triggering due to high dv/dt. Total losses are provided for each example switch configuration.

Uploaded by

Faiz Azman
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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EEE3076 : Power Electronics

Tutorial 1: Overview of Power Semiconductor Switches

1. A circuit as shown in Figure T1.1 uses a power bipolar junction transistor (BJT) as a
switch. Following are the measured parameters at the switch. The switch is operated
at a switching frequency of 50 kHz and a duty cycle of 68 %. [Duty Cycle = Ton/T]
During OFF State
VCE = 150 V, IC = 2.5mA
During ON State
VCE = 2.0 V, VBE = 0.7 V, Current Gain, = 80, Load Current = 8A
During Switching
Turn-on time= 85 ns and turn-off time= 100 ns.
Determine the following losses in the BJT.
a). Total conduction loss [11.06 W]
b). Total dynamic loss [1.85 W ]
c). Total power losses
[12.91 W ]

Load
150V

B
E

Figure T1.1
2. Figure T1.2 shows a circuit with a power semiconductor device used as a switch.
The switch operates with the duty cycle of 50 %. The load current in the circuit is
assumed constant, with a value of 12 A due to the large inductance. The diode onstate resistance is 0.15 and the threshold voltage of the diode is 1V. Calculate the
following parameters:
a). Power loss in diode resistive [10.8 W]
b). Static on-state power loss in diode [6 W]
c). Total power loss for the diode [16.8 W]

Revised by gobbi.r. 24 June 2016

EEE3076 : Power Electronics


Tutorial 1: Overview of Power Semiconductor Switches

Figure T1.2
3. The dv/dt rating of the thyristor in the circuit shown in Figure T1.3 is 100V/s.
Determine the minimum value of C so that no accidental turn on of the thyristor
occurs due to the dv/dt rise when S is close. [C= 0.4F ]
i
+
-

Switch
S
Vs=
400V

10
C
Gate
driver

Figure T1.3
4. Given the BJT data and circuit diagram shown in Figure T1.4,
a). Calculate the total power losses in the BJT when used to switch an inductive
load across a 400V dc supply at 10 kHz. Assume that the inductance of the
load is large so that the load current is constant with a value of 10A and the
transistor is in the on-state and off-state for the same length of duration.
Neglect the on-state voltage drop of the diode and the effects of on and off on
the static losses. [41.775 W]
b). If the diode in Figure T1.4 has Vth = 1V and Ron = 0.1, estimate the power
loss incurred by the diode. [10 W]
Data:
VCE (sat) = 0.3 V
VBE (on) = 0.7 V
on = 1s
off = 1s
= 20
IC(leakage) = 500 A

VCC = 400V
D

Rb
Vb

Figure T1.4

Revised by gobbi.r. 24 June 2016

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