Series IRK.136, .142, .162: NEW INT-A-pak Power Modules Thyristor/Diode and Thyristor/Thyristor

Bulletin I27117 rev.
C 03/02
SERIES
IRK.136, .142, .162
THYRISTOR/DIODE and
THYRISTOR/THYRISTOR
NEW INT-A-pak Power Modules
Features
135 A
140 A
160 A
High Voltage
Electrically Isolated by DBC Ceramic ( Al 2 O 3 )
3500 V RMS Isolating Voltage
Industrial Standard Package
High Surge Capability
Glass Passivated Chips
Modules uses High Voltage Power thyristor/diodes
in three Basic Configurations
Simple Mounting
UL E78996 approved
Applications
DC Motor Control and Drives
Battery Charges
Welders
Power Converters
Lighting Control
Heat and Temperature Control
Major Ratings and Characteristics

Parameters
IT(AV)
@ TC
IT(RMS)
CASE STYLE NEW INT-A-PAK
IRK.136.. IRK.142.. IRK.162.. Units

135
140
160
85
85
85
300
310
355
ITSM @ 50Hz
3200
4500
4870
@ 60Hz
3360
4712
5100
I2t @ 50Hz
51.5
102
119
KA2s
@ 60Hz
I2t
47
92.5
108
KA2s
515.5
1013
1190
KA2s
VRRM
400 to 1600
TJ range
- 40 to 125
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IRK.136, .142, .162 Series

Bulletin I27117 rev. C 03/02
Electrical Specifications
Voltage Ratings
Type number
Voltage VRRM/VDRM , Maximum repetitive VRSM/VDSM, Maximum non-repetitive

Code
peak reverse voltage
peak reverse voltage
V
V
IRK.136
04
400
500
IRK.142
08
800
900
IRK.162
12
1200
1300
14
1400
1500
16
1600
1700
IRRM / IDRM
@ 125C
mA
50
Forward Conduction
Parameter
IT(AV) Max. average on-state current
IRK.136
IRK.142
IRK.162
Units Conditions
135
140
160
A
C
180 conduction, half sine wave
@ Case temperature
85
85
85
IT(RMS) Max. RMS on-state current
300
310
355
as AC switch
Maximum peak, one-cycle
3200
4500
4870
t = 10ms
on-state, non-repetitive
3360
4712
5100
t = 8.3ms reapplied
surge current
2700
3785
4100
t = 10ms
2800
3963
4300
t = 8.3ms reapplied
51.5
102
119
47
92.5
108
t = 8.3ms reapplied
36.5
71.6
84
t = 10ms
ITSM
I2t
I2t
Maximum I2t for fusing
Maximum I2t for fusing
VT(TO)1 Low level value of threshold
33.3
65.4
76.7
515.5
1013
1190
0.86
0.83
0.8
1.05
0.98
2.02
1.78
1.67
1.65
1.43
1.38
1.57
1.55
1.54
KA2s
t = 10ms
No voltage
100% VRRM
No voltage
Sine half wave,

Initial TJ = TJ max.
100% VRRM
t = 8.3ms reapplied
KA2s t = 0.1 to 10ms, no voltage reapplied
V
(16.7% x x IT(AV) < I < x IT(AV)), @ TJ max.
voltage
VT(TO)2 High level value of threshold
(I > x IT(AV)), @ TJ max.
voltage
rt1
Low level value on-state
(16.7% x x IT(AV) < I < x IT(AV)), @ TJ max.
slope resistance
rt2
High level value on-state
(I > x IT(AV)), @ TJ max.
slope resistance
V
ITM = x IT(AV), TJ = 25C, 180conduction
VTM
Maximum forward voltage drop
IH
Maximum holding current
200
mA
Anode supply = 6V initial IT = 30A, TJ = 25C
IL
Maximum latching current
400
mA
Anode supply = 6V resistive load = 1

Gate pulse: 10V, 100s, TJ = 25C
Switching
tgd
Typical delay time
tgr
Typical rise time
tq
Typical turn-off time
50 - 200
TJ = 25oC
Gate Current=1A dIg/dt=1A/s
TJ = 25 C
Vd=0,67% VDRM
ITM = 300 A; -dI/dt = 15 A/s; TJ = TJ max

Vr = 50 V; dV/dt = 20 V/s; Gate 0 V, 100
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IRK.136, .142, .162 Series

Blocking
IRRM
Maximum peak reverse and
IDRM
off-state leakage current
VINS
RMS isolation voltage
50
mA
TJ = 125oC
3500
1000
V/s
IRK.142
IRK.162
dV/dt critical rate of rise of off-state voltage
50Hz, circuit to base, all terminals shorted, t = 1s

TJ = TJ max., exponential to 67% rated VDRM
Triggering
Parameter
PGM
IRK.136
Max. peak gate power
PG(AV) Max. average gate power
Units Conditions
12
tp 5ms, TJ = TJ max.
f=50Hz, TJ = TJ max.
tp 5ms, TJ = TJ max.
IGM
Max. peak gate current
-VGT
Max. peak negative
10
gate voltage
VGT
Max. required DC gate
TJ = - 40C
Anode supply = 6V, resistive
TJ = 25C
load; Ra = 1
voltage to trigger
2.5
1.7
TJ = TJ max.
Max. required DC gate
270
TJ = - 40C
Anode supply = 6V, resistive
current to trigger
150
mA
TJ = 25C
load; Ra = 1
VGD
Max. gate voltage
80
0.3
IGD
that will not trigger

Max. gate current
that will not trigger
10
mA
300
A/s
IGT
di/dt
Max. rate of rise of

turned-on current
TJ = TJ max.
@ TJ = TJ max., rated VDRM applied
@ TJ = TJ max., ITM = 400A rated VDRMapplied
Thermal and Mechanical Specifications

Parameter
IRK.136
IRK.142
IRK.162
Units Conditions
TJ
Max. junction operating
-40 to 125
Tstg
temperature range
Max. storage temperature
-40 to 150
RthJC
range
Max. thermal resistance,
junction to case
0.18
RthCS
Max. thermal resistance,

case to heatsink
Mounting
IAP to heatsink
torque 10% busbar to IAP
Approximate weight
wt
Case Style
0.18
0.16
K/W
DC operation, per junction
0.05
K/W
Mounting surface smooth, flat and greased

Per module
4 to 6
4 to 6
200 (7.1)
Nm
A mounting compound is recommended and

the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound. Lubricated threads.
g(oz)
New Int-A-Pak
R Conduction (per Junction)

(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Devices
Sinusoidal conduction @ TJ max.

180o
120o
90o
60o
Rectangular conduction @ TJ max.

30o
180o
120o
90o
60o
30o
IRK.136
0.007
0.01
0.013
0.0155
0.017
0.009
0.012
0.014
0.015
0.017
IRK.142
0.0019
0.0019
0.0020
0.0020
0.0021
0.0018
0.0022
0.0023
0.0023
0.0020
IRK.162
0.0030
0.0031
0.0032
0.0033
0.0034
0.0029
0.0036
0.0039
0.0041
0.0040
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Units
K/W
IRK.136, .142, .162 Series

Ordering Information Table
Device Code
IRK
162
16
4
Module Type
Circuit Configuration
Current Rating: IT(AV)
Voltage Code: Code x 100 = VRRM
Outline Table
Dimensions are in millimeters and [inches]
IRKT
IRKH
IRKL
5 7
4 6
5
4
7
6
NOTE: To order the Optional Hardware see Bulletin I27900
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IRK.136, .142, .162 Series
13 0
IRK.136.. Series
R thJC (D C ) = 0.18 K/W
12 0
11 0
C o nd uctio n Angle
10 0
90
30
60
90
80
120
180
70
0
20
40
60
80
10 0
12 0
14 0
M axim um Allow a b le C ase Tem perature ( C )
M a xim um Allo w a ble C ase Tem peratu re ( C )

13 0
IRK .1 3 6 .. Se ries
R thJC (D C ) = 0 .1 8 K/W
12 0
11 0
C o n d u c tio n P e rio d
10 0
30
60
90
90
120
80
180
0
50
Averag e Forw ard C urren t (A )
RM S Lim it
100
IRK .136.. Se ries

Per Junction
T J = 125 C
50
0
0
30
60
90
12 0
15 0
M axim um Averag e O n-state Pow er Loss (W )
M a xim um A vera ge O n-state Pow er Loss (W )
180
120
90
60
30
150
DC
180
120
90
60
30
300
250
200
100
C o n d uc tio n P eriod
IRK .136.. Se ries

Per Junction
TJ = 12 5 C
50
0
0
50
24 0 0
22 0 0
20 0 0
18 0 0
16 0 0
IRK.136.. Series
Per Junction
12 0 0
1
10
10 0
Num b er O f Eq ua l Am p litud e H a lf C yc le C urre nt P ulses (N)
Fig.5 - Maximum Non-Repetitive Surge Current
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1 00
1 50
2 00
2 50
Fig. 4 - On-State Power Loss Characteristics
Peak Ha lf Sine W a ve O n -sta te C urrent (A)
Pea k H alf Sin e W a ve O n -sta te C urren t (A )
In itial TJ = 125 C
@ 60 Hz 0.00 83 s
@ 50 Hz 0.01 00 s
14 0 0
RM S Lim it
A vera ge O n -sta te C urrent (A)
A t A ny R ate d Lo ad C o nditio n A n d W ith

R ated V RRM A pplied Follo w ing Surge .
26 0 0
25 0
150
Averag e O n-state C urrent (A)
28 0 0
2 00
350
30 0 0
15 0
Fig. 2 - Current Ratings Characteristics
300
200
100
Averag e O n-state C urren t (A )
250
DC
70
35 0 0
Maxim um No n Repetitive Surge Curre nt

V ers us Pulse Train D uratio n. C ontrol
O f Co nductio n M ay Not Be M aintained.
In itial T J= 125 C
No V oltag e Re ap plie d
Ra te d V
Re ap plie d
30 0 0
RRM
25 0 0
20 0 0
15 0 0
IRK.1 36.. Se ries
Pe r Ju nction
10 0 0
0 .0 1
0.1
Pulse Tra in D ura tion (s)

Fig. 6 - Maximum Non-Repetitive Surge Current
IRK.136, .142, .162 Series
450
S
R th
W
K/
. 01
=0
/W
4K
e lt
-D
aR
50
K /W
150
IRK.136.. Se rie s
Pe r M odule
TJ = 12 5 C
K /W
0 .6
100
0 .0
0 .4
200
K/
250
K/
K/
C onductio n Angle
25
08
300
0.
16
350
K/
0.
180
120
90
60
30
12
400
0.
0.
M axim um Tota l O n -sta te Pow e r Loss (W )
1 K/
W
0
0
50
100
150
200
250
Tota l R M S Outp ut C urre nt (A)
300
0
25
50
75
1 00
125
M axim um A llowab le Am bient Tem pera ture ( C )
Fig.7 - On State Power Loss Characteristics
A
hS
R t
90 0
0.
04
60 0
0 .2
K/
K/
50
75
a
e lt
-D
50 0
08
180
(Sine )
180
(Re ct)
12
K/
0.
. 01
=0
0.
70 0
80 0
K/
K /W
M axim um To ta l P o we r Lo ss (W )
1 0 00
40 0
0 .3 5
30 0
K /W
2 x IRK.136.. Series 0 .
6 K /W
Single P hase Brid ge
C onnected
T J = 125 C
20 0
10 0
0
0
55
11 0
165
220
Total O utp ut C urre nt (A)
2 07 5
25
100
125
M axim um Allowab le Am bient Te m p era ture ( C )
R
th
12 0 0
SA
0.
el
ta
R
6K
/
-D
0 .1
60 0
K/
K/
08
0.1
K/
0.
120
(Rec t)
90 0
04
M a xim u m To ta l Po w e r Lo ss (W )
15 0 0
0 . 25
K /W
3 x IR K.1 3 6.. Serie s
Th ree Ph a se B rid g e 0 .4 K / W
C o n n ec te d
1 K /W
T J = 12 5 C
30 0
0
0
10 0
20 0
3 00
To ta l O u tp u t C u rre nt (A )
4 000
25
50
75
1 00
1 25
M axim u m A llo w a b le A m b ien t Tem p e ra tu re ( C )
Fig.9- On State Power Loss Characteristics
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IRK.136, .142, .162 Series
IRK.142.. Series
R thJC (D C ) = 0.18 K/W
120
110
100
30
90
60
90
80
120
180
70
0
30
60
90
1 20
1 50
M axim um Allow a ble C ase Tem perature ( C )
130
130
IR K.1 4 2 .. Se rie s
R thJC (D C ) = 0 .1 8 K /W
120
110
C o n d uc tio n P e rio d
100
30
60
90
90
120
80
180
DC
70
0
50
200
25 0
180
120
90
60
30
20 0
15 0
RMS Lim it
10 0
C o nd uc tio n Angle
50
IRK .142.. Series

Per Junction
TJ = 12 5 C
0
0
30
60
90
1 20
1 50
35 0
DC
180
120
90
60
30
30 0
25 0
20 0
15 0 R M S L im it
C o nd u c tio n Pe rio d
10 0
IRK .1 4 2 .. Se rie s
P er Ju n c tio n
TJ = 12 5 C
50
0
0
50
A t A ny Rated Lo ad C o nditio n A n d W ith

R ated V RRM A pplied Follo w ing Surge .
In itial T J= 125 C
@ 60 Hz 0.00 83 s
@ 50 Hz 0.01 00 s
40 0 0
35 0 0
30 0 0
25 0 0
IRK.142.. Series
Per Junction
15 0 0
1
10
10 0
N um b er O f Eq ua l A m p litud e H a lf Cy cle C urrent P ulses (N )
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1 50
2 00
2 50
Pea k H alf Sin e W ave O n -sta te C urren t (A)
45 0 0
1 00
Peak H a lf Sin e W a ve O n -stat e C urren t (A)
15 0
Averag e O n-state C urrent (A)
25 0
20 0 0
100
A vera ge Forw a rd C urrent (A)
M axim um Averag e O n -state Pow er Loss (W )
M axim um A ve ra ge O n -sta te Po w er Lo ss (W )
M a xim um Allo w ab le C ase Tem peratur e ( C)
5 00 0
M axim um Non Repetitive Surge Current

V e rsus Pulse Train D uratio n. C o ntro l
O f Co nductio n Ma y No t Be M aintained .
Initia l T J= 125 C
N o V oltag e Re a pp lied
Ra te d V R R M
Re a pp lie d
4 50 0
4 00 0
3 50 0
3 00 0
2 50 0
2 00 0
IRK.1 42.. Se rie s

Pe r Ju nction
1 50 0
0 .0 1
0 .1
Pu lse Tra in D uration (s)

IRK.136, .142, .162 Series
400
R
W
/
4K
0.0
W
K/
08
0.
W
K/
12 W
K/
16
0.
0.
th
SA
0.
K/
0 .6
aR
200
K/
e lt
-D
0 .4
25
K /W
180
120
90
60
30
300
.0 1
=0
M axim um Total O n-state Pow e r Lo ss (W )
K/W
C o nductio n A n g le
1K
/W
IRK.142.. Se rie s
Per M odule
T J = 125 C
100
0
0
50
100
150
200
250
Tota l R M S O utp ut C urre nt (A)
300
25
50
75
10 0
12 5
M axim um A llowa ble A m b ient Tem perature ( C )
hS
R t
0.
04
/W
1K
2 00
100
To ta l O u tp ut C u rre nt (A )
lta
0 .2
e
-D
.0
=0
2K
/W
0.1
6K
/W
2 x IR K .1 4 2.. Se ries
Sin g le P h a se Brid g e
C o n n ec te d
T J = 12 5 C
20 0
40 0
K/
0 .1
180
(Sine )
180
(Re ct)
60 0
08
0.
80 0
K/
M a xim um Tota l P o w er Lo ss (W )
1 00 0
5K
/W
0 .6 K
/W
0
3 00
25
50
75
10 0
12 5
M axim um A llowa ble A m b ient Tem perature ( C )
S
R th
0.
06
K/
e
-D
0.0
8 00
/
2K
0.
120
(Rec t)
0.0
12 0 0
K/
04
8K
/W
l ta
R
Ma xim u m Total Power Lo ss (W )
16 0 0
0.1
K/
W
3 x IRK.142.. Series
Three P hase Brid ge 0 .1 6 K /W
C o nnected
0.2 K/W
TJ = 125 C
4 00
0
0
5 0 10 0 1 5 0 20 0 25 0 30 0 35 0 4 0 0 450 0
Total O utp ut C urre nt (A)
25
50
75
10 0
12 5
M axim um A llowab le Am bie nt Tem perature ( C )
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IRK.136, .142, .162 Series
IRK.162.. Series
R thJ C (D C ) = 0.16 K/W
120
110
100
90
30
60
90
80
120
180
70
0
30
60
90
1 20
150
180
M axim um Allow a b le C ase Tem perature ( C )
130
1 30
IRK .162.. Series

R thJC (DC ) = 0.16 K/W
1 20
1 10
1 00
C on d uctio n P e rio d
30
90
60
80
90
120
70
180
0
50
100
15 0
20 0
2 50
300
A vera ge O n -sta te C urrent (A)
4 00
IRK .162.. Se ries
3 50 Per Junction
TJ = 125 C
3 00
180
120
2 50
90
60
2 00
30
RM S Lim it
1 50
1 00
50
0
0
20
40
60
8 0 10 0 1 20 1 40 1 6 0 1 8 0
40 0
DC
180
120
90
60
30
35 0
30 0
25 0
20 0
RM S Lim it
15 0
C o n du c tio n Pe rio d
10 0
IRK.162.. Se ries
Per Junctio n
T = 125 C
50
0
0
30
Averag e O n-state C urren t (A)
A t A ny R ate d Lo ad C on dition A n d W ith

Rate d V RRM A pplie d Fo llow ing Surg e .
4 00 0
In itial T J = 125 C
@ 60 Hz 0.00 83 s
@ 50 Hz 0.01 00 s
3 50 0
3 00 0
2 50 0
2 00 0
IRK.162.. Series
Per Jun ction
1 50 0
1
10
10 0
Num b er O f Eq ua l Am p litud e H a lf C ycle C urrent P ulse s (N)
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9 0 1 2 0 15 0 1 80 2 10 2 4 0 2 7 0
Peak Ha lf Sine W av e O n -sta te C urrent (A)
4 50 0
60
Averag e O n -sta te C urren t (A )
Pea k H alf Sin e W a ve O n-state C urren t (A )
DC
60
Averag e Fo rw ard C urrent (A)
M a xim um A vera g e O n -sta te Pow e r Lo ss (W )
M axim um Averag e O n-state Pow er Loss (W )
M a xim um A llow ab le C a se Tem p era ture ( C )
50 0 0
M axim um Non Repetitive Surge Current

V e rsus Pulse Train D uratio n. C o ntro l
O f Co nductio n Ma y No t Be M aintained .
In itia l T J= 125 C
No V olta ge Re ap plied
Ra te d V R R M
Re ap plie d
45 0 0
40 0 0
35 0 0
30 0 0
25 0 0
20 0 0
IRK .162.. Series

Per Junction
15 0 0
0.0 1
0 .1
Pu lse Tra in D uration (s)
IRK.136, .142, .162 Series
600
S
R th
A
0. 0
K/
2
K/
W
ta
el
-D
6K
/W
0.2
C onductio n An gle
K /W
IRK.162.. Se rie s
Pe r M odule
T J = 125 C
100
04
K/
0 .1
200
K/
0.1
300
08
K/
400
0.
06
180
120
90
60
30
500
0.
0.
M a xim um T ota l O n-state Pow e r Loss (W )
0
0
100
200
400
0
300
Tota l RM S O utp ut C urre nt (A)
25
50
75
100
125
M axim um A llowab le Am b ie nt Tem p era ture ( C )
0.
8 00
0.2
0 .4
3 00
K/
ta
el
0.3
-D
4 00
5 00
K/
K/
180
(Sine )
180
(Re ct)
04
6 00
12
K/
0.
0.
7 00
08
A
hS
Rt
M axim um Total P ower Lo ss (W )
9 00
K /W
K /W
2 x IRK.162.. Series 0 .6
K /W
Single Phase Brid ge
1 K /W
C onnected
T J = 125 C
2 00
1 00
0
0
50
100
15 0
20 0
25 0
Tota l O utput C urrent (A)
0
3 00
25
50
75
10 0
12 5
M axim um A llo wa ble A m b ient Tem perature ( C )
04
K/
1 2 50
S
R th
0.
K/
K/
e lt
-D
2 K
/W
7 50
0 .1
120
(Rect)
08
0. 0
0.
1 0 00
M axim u m To tal Po wer Loss (W )
1 5 00
0 .2
5 00
K /W
3 x IRK.162.. Series 0 .3 K
/W
Three Phase Brid ge
0.
C onnected
6 K /W
T J = 12 5 C
2 50
0
0
50 1 0 0 15 0 2 00 25 0 3 0 0 3 5 0 4 00 4050
Tota l Output C urrent (A)
25
50
75
100
125
M a xim um A llo w a b le A m b ie n t Te m p era tu re ( C )
10
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IRK.136, .142, .162 Series

10000
Instantaneous On-state Current (A)
10000
1000
T J = 25C
T J= 125C
100
10
IRK.136.. Series
Per Junction
1000
T = 125C
J
100
10
IRK.142.. Series
Per Junction
1
0
Instantaneous On-state Voltage (V)
Fig.28 - On State Voltage Drop Characteristics
1
Transient Thermal Impedance Z thJC
10000
1000
TJ = 25C
TJ = 125C
100
10
IRK.162.. Series
Per Junction
1
0
1
2
3
4
5
0.1
0.01
IRK.136.. Series
0.01
0.1
1
Square Wave Pulse Duration (s)
10
1
Steady State Value
(DC Operation)
0.1
IRK.142.. Series
0.1
1
10
Fig.32 - Thermal Impedance ZthJC Characteristics
www.irf.com
(DC Operation)
0.01
0.01
Steady State Value
0.001
0.001
TJ = 25C
Steady State Value

(DC Operation)
0.1
IRK.162.. Series
0.01
0.01
0.1
1
10
11
IRK.136, .142, .162 Series

10
Rec ta ng ula r g a te p ulse

a )Re c o m m end e d lo a d line fo r
ra ted d i/d t: 20 V, 20 o hm s
tr = 0.5 s, tp >= 6 s
b )Re c o m m end e d loa d line fo r
<= 30% ra ted d i/d t: 15 V , 40 o hm s
tr = 1 s, tp >= 6 s
(1)
(2)
(3)
(4)
PG M
PG M
PG M
PG M
=
=
=
=
200 W , tp = 300 s
60 W , tp = 1 m s
30 W , tp = 2 m s
12 W , tp = 5 m s
(4)
(3 ) (2)
(a)
(b )
TJ = -40 C
TJ = 12 5 C
TJ = 25 C
In stan ta neous G a te V olta ge (V )
1 00
(1)
VG D
IG D
0 .1
0 .0 0 1
0.0 1
IR K.1 3 6 ..1 4 2 ..1 6 2 .. Se ries

0 .1
Frequen cy Lim ited by PG (AV )
10
100
1 00 0
Instan ta n eous G a te C urren t (A )

Fig. 34 - Gate Characteristics
Data and specifications subject to change without notice.

This product has been designed and qualified for Multiple Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/02
12
www.irf.com

Series IRK.136, .142, .162: NEW INT-A-pak Power Modules Thyristor/Diode and Thyristor/Thyristor

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Series IRK.136, .142, .162: NEW INT-A-pak Power Modules Thyristor/Diode and Thyristor/Thyristor

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Available Formats

Bulletin I27117 rev.

NEW INT-A-pak Power Modules

Major Ratings and Characteristics

CASE STYLE NEW INT-A-PAK

IRK.136.. IRK.142.. IRK.162.. Units

IRK.136, .142, .162 Series

Voltage VRRM/VDRM , Maximum repetitive VRSM/VDSM, Maximum non-repetitive

180 conduction, half sine wave

IT(RMS) Max. RMS on-state current

Maximum peak, one-cycle

Maximum I2t for fusing

Maximum I2t for fusing

VT(TO)1 Low level value of threshold

Sine half wave,

(16.7% x x IT(AV) < I < x IT(AV)), @ TJ max.

(I > x IT(AV)), @ TJ max.

Low level value on-state

(16.7% x x IT(AV) < I < x IT(AV)), @ TJ max.

High level value on-state

(I > x IT(AV)), @ TJ max.

ITM = x IT(AV), TJ = 25C, 180conduction

Maximum forward voltage drop

Maximum holding current

Anode supply = 6V initial IT = 30A, TJ = 25C

Maximum latching current

Anode supply = 6V resistive load = 1

Typical delay time

Typical rise time

Typical turn-off time

Gate Current=1A dIg/dt=1A/s

ITM = 300 A; -dI/dt = 15 A/s; TJ = TJ max

IRK.136, .142, .162 Series

Maximum peak reverse and

off-state leakage current

RMS isolation voltage

dV/dt critical rate of rise of off-state voltage

50Hz, circuit to base, all terminals shorted, t = 1s

Max. peak gate power

PG(AV) Max. average gate power

Max. peak gate current

Max. peak negative

Max. required DC gate

Anode supply = 6V, resistive

Max. required DC gate

Anode supply = 6V, resistive

Max. gate voltage

that will not trigger

Max. rate of rise of

@ TJ = TJ max., ITM = 400A rated VDRMapplied

Thermal and Mechanical Specifications

Max. junction operating

Max. thermal resistance,

DC operation, per junction

Mounting surface smooth, flat and greased

A mounting compound is recommended and

R Conduction (per Junction)

Sinusoidal conduction @ TJ max.

Rectangular conduction @ TJ max.