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Assignment 1

This document contains 6 questions about semiconductor physics concepts. Question 1 asks about electron drift velocity and transit time given material properties. Question 2 asks about the intrinsic carrier concentration ratio between two materials with different bandgaps. Question 3 asks about equilibrium hole concentration and Fermi level position given doping. Question 4 asks about resistivity and mobility given carrier densities and ratios. Question 5 asks about electron diffusion current given a concentration gradient. Question 6 asks about output voltage given circuit components and an input signal.

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Gourav Goyal
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609 views

Assignment 1

This document contains 6 questions about semiconductor physics concepts. Question 1 asks about electron drift velocity and transit time given material properties. Question 2 asks about the intrinsic carrier concentration ratio between two materials with different bandgaps. Question 3 asks about equilibrium hole concentration and Fermi level position given doping. Question 4 asks about resistivity and mobility given carrier densities and ratios. Question 5 asks about electron diffusion current given a concentration gradient. Question 6 asks about output voltage given circuit components and an input signal.

Uploaded by

Gourav Goyal
Copyright
© © All Rights Reserved
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Assignment 1

Q1. A semiconductor wafer is 0.5mm thick .A potential of 110mV is applied to the


thickness.
i. . What is the electron drift velocity if mobility is 0.2 m2/V-sec?
ii. How much time is required for an e to move across the thickness?
Q2.Two semiconductor materials have exactly the same properties except material
A has a band gap of energy of 1.0eV and material B has a band gap energy of 1.2
n
eV. Determine the ratio of i (intrinsic concentration) of material A to material
B.
17
3
Q3. A silicon bar is doped with 10 arsenic atom/ cm . What is the equilibrium

holes concentration at 300K? Where is the Fermi level (


located relative to intrinsic Fermi level. It is known that

ni

Ef

) of the sample

10
3
=1.5 10 / cm .

Q.4. Intrinsic silicon has resistivity 3000-m. If the free carrier density in it is 1.1
6 3
10 m
and electron mobility is three times that of hole mobility. Calculate
mobility values of electron and holes.
Q.5. A plot of electron concentration in Si with distance is given in the figure
below .The area of sample is 0.05cm2 .The electron diffusion coefficient is
25cm2/s calculate electron diffusion current.

Q. 6. In the circuit shown below, assume that the voltage drop across a forward
Vt
bias diode is 0.7V. The themal voltage
=25mV. The small signal input
v i=100 mV cos ( t ) .

What is the total voltage at the output?

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