EE311 Homework 11
EE311 Homework 11
Spring 2016
Homework 11
19th April, 2016
1. Give the modified transistor characteristics for an n-MOSFET where the source and drain
contact resistance is Rc at each contact. What are the two main reasons why the drain current may
decrease?
2. Give a 22 table showing the nature of the dopants to be used for a delta implant to increase
and decrease the absolute value of the threshold voltage in enhancement mode n-MOSFETs and pMOSFETs.
3. List the possible deviation of a MOSFET behaviour from the ideal / textbook model as the
channel length is reduced. What device parameter will you modify to minimise the deviation?
Give your answer in a tabular form.