2N5060 Series

Preferred Device

Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Annular PNPN devices designed for high volume consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-226AA (TO-92) package
which is readily adaptable for use in automatic insertion equipment.
Sensitive Gate Trigger Current 200 A Maximum
Low Reverse and Forward Blocking Current 50 A Maximum,
TC = 110C
Low Holding Current 5 mA Maximum
Passivated Surface for Reliability and Uniformity
Device Marking: Device Type, e.g., 2N5060, Date Code

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SCRs
0.8 AMPERES RMS
30 thru 200 VOLTS

G
A

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Rating

Symbol

Peak Repetitive OffState Voltage(1)

(TJ = 40 to 110C, Sine Wave,
50 to 60 Hz, Gate Open)
2N5060
2N5061
2N5062
2N5064

VDRM,
VRRM

On-State Current RMS

(180 Conduction Angles; TC = 80C)

IT(RMS)

Value

Unit
Volts

30
60
100
200

*Average On-State Current

(180 Conduction Angles)
(TC = 67C)
(TC = 102C)

IT(AV)

*Peak Non-repetitive Surge Current,

TA = 25C
(1/2 cycle, Sine Wave, 60 Hz)

ITSM

0.8

Amp

10

PIN ASSIGNMENT
1
A2s

*Forward Peak Gate Power

(Pulse Width
1.0 sec; TA = 25C)

PGM

0.1

Watt

PG(AV)

0.01

Watt

*Forward Peak Gate Current

(Pulse Width
1.0 sec; TA = 25C)

IGM

1.0

Amp

*Reverse Peak Gate Voltage

(Pulse Width
1.0 sec; TA = 25C)

VRGM

5.0

Volts

*Operating Junction Temperature Range

TJ

40 to
+110

Tstg

40 to
+150

*Storage Temperature Range

Amps

0.4

TO92 (TO226AA)
CASE 029
STYLE 10

0.51
0.255

I2t

*Forward Average Gate Power

(TA = 25C, t = 8.3 ms)

Amp

Circuit Fusing Considerations (t = 8.3 ms)

Cathode

Gate

Anode

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.

*Indicates JEDEC Registered Data.

(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

Semiconductor Components Industries, LLC, 2000

May, 2000 Rev. 4

Publication Order Number:

2N5060/D

2N5060 Series
THERMAL CHARACTERISTICS
Symbol

Max

Unit

*Thermal Resistance, Junction to Case(1)

Characteristic

RJC

75

C/W

Thermal Resistance, Junction to Ambient

RJA

200

C/W

+230*

*Lead Solder Temperature

(Lead Length
1/16 from case, 10 s Max)

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

*Peak Repetitive Forward or Reverse Blocking Current(2)

(VAK = Rated VDRM or VRRM)
TC = 25C
TC = 110C

IDRM, IRRM

10
50

A
A

1.7

Volts

200
350

0.8
1.2

0.1

IH

5.0
10

td
tr

3.0
0.2

OFF CHARACTERISTICS

ON CHARACTERISTICS
*Peak Forward OnState Voltage(3)
(ITM = 1.2 A peak @ TA = 25C)

VTM

Gate Trigger Current (Continuous dc)(4)

*(VAK = 7 Vdc, RL = 100 Ohms)
Gate Trigger Voltage (Continuous dc)(4)
*(VAK = 7 Vdc, RL = 100 Ohms)

TC = 25C
TC = 40C

*Gate NonTrigger Voltage

(VAK = Rated VDRM, RL = 100 Ohms)
Holding Current (4)
*(VAK = 7 Vdc, initiating current = 20 mA)

VGT
VGD

TC = 110C
TC = 25C
TC = 40C

Volts
Volts
mA
s

Turn-On Time
Delay Time
Rise Time
(IGT = 1 mA, VD = Rated VDRM,
Forward Current = 1 A, di/dt = 6 A/s
Turn-Off Time
(Forward Current = 1 A pulse,
Pulse Width = 50 s,
0.1% Duty Cycle, di/dt = 6 A/s,
dv/dt = 20 V/s, IGT = 1 mA)

IGT
TC = 25C
TC = 40C

tq

2N5060, 2N5061
2N5062, 2N5064

10
30

30

DYNAMIC CHARACTERISTICS
Critical Rate of Rise of OffState Voltage
(Rated VDRM, Exponential)

dv/dt

V/s

*Indicates JEDEC Registered Data.

(1) This measurement is made with the case mounted flat side down on a heat sink and held in position by means of a metal clamp over the
curved surface.
(2) RGK = 1000 is included in measurement.
(3) Forward current applied for 1 ms maximum duration, duty cycle
1%.
(4) RGK current is not included in measurement.

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2

2N5060 Series
Voltage Current Characteristic of SCR
+ Current

Symbol

Parameter

VDRM
IDRM

Peak Repetitive Off State Forward Voltage

VRRM
IRRM

Peak Repetitive Off State Reverse Voltage

Anode +
VTM

on state

Peak Forward Blocking Current

IH

IRRM at VRRM

Peak Reverse Blocking Current

VTM
IH

Peak on State Voltage

Holding Current

Reverse Blocking Region

(off state)
Reverse Avalanche Region

+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)

Anode

130
120

CASE MEASUREMENT
POINT CENTER OF
FLAT PORTION

110
100

dc
90
80

= 30

70

60

90

120

130

= CONDUCTION ANGLE

180

60

TA , MAXIMUM ALLOWABLE AMBIENT

TEMPERATURE ( C)

TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (C)

CURRENT DERATING

50

= CONDUCTION ANGLE
110
TYPICAL PRINTED
CIRCUIT BOARD
MOUNTING

90

70

dc

50
= 30

60

90 120

180

30
0

0.1

0.2

0.3

0.4

0.5

0.1

0.2

0.3

IT(AV), AVERAGE ON-STATE CURRENT (AMP)

IT(AV), AVERAGE ON-STATE CURRENT (AMP)

Figure 1. Maximum Case Temperature

Figure 2. Maximum Ambient Temperature

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3

0.4

2N5060 Series
CURRENT DERATING

10
ITSM , PEAK SURGE CURRENT (AMP)

5.0

3.0
2.0

TJ = 110C

1.0
0.7

5.0

3.0
2.0

0.5
1.0
1.0

3.0

5.0 7.0

10

20

30

50 70

100

NUMBER OF CYCLES

Figure 4. Maximum NonRepetitive Surge Current

0.2

0.8
0.1
0.07
0.05

0.03
0.02

120
a
= CONDUCTION ANGLE
= 30

0.6

60

180

90

0.4
dc
0.2

0.01

0
0

r(t), TRANSIENT THERMAL RESISTANCE NORMALIZED

2.0

0.3

P(AV), MAXIMUM AVERAGE POWER

DISSIPATION (WATTS)

i T , INSTANTANEOUS ON-STATE CURRENT (AMP)

25C

7.0

0.5

1.0

1.5

2.0

2.5

0.3

0.2

0.1

0.5

0.4

vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

IT(AV), AVERAGE ON-STATE CURRENT (AMP)

Figure 3. Typical Forward Voltage

Figure 5. Power Dissipation

1.0
0.5

0.2
0.1
0.05

0.02
0.01
0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

t, TIME (SECONDS)

Figure 6. Thermal Response

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4

1.0

2.0

5.0

10

20

2N5060 Series

I GT , GATE TRIGGER CURRENT (NORMALIZED)

TYPICAL CHARACTERISTICS

VAK = 7.0 V
RL = 100
RGK = 1.0 k

0.7

0.6

0.5

0.4
0.3
75

50

25

25

50

75

200
VAK = 7.0 V
RL = 100

100
50
2N5062-64
20
10
5.0
2N5060-61
2.0
1.0
0.5
0.2

100 110

75

50

25

25

50

75

TJ, JUNCTION TEMPERATURE (C)

TJ, JUNCTION TEMPERATURE (C)

Figure 7. Typical Gate Trigger Voltage

Figure 8. Typical Gate Trigger Current

4.0
I H , HOLDING CURRENT (NORMALIZED)

VG , GATE TRIGGER VOLTAGE (VOLTS)

0.8

VAK = 7.0 V
RL = 100
RGK = 1.0 k

3.0
2.0

2N5060,61

1.0
0.8

2N5062-64
0.6
0.4
75

50

25

25

50

75

TJ, JUNCTION TEMPERATURE (C)

Figure 9. Typical Holding Current

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5

100 110

100 110

2N5060 Series
TO92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL
H2A

H2A

H2B

H2B

H
W2
H4 H5

T1
L1

H1
W1 W

T
T2

F1
F2
P2

P2

P1

Figure 10. Device Positioning on Tape

Specification
Inches
Symbol

Item

Millimeter

Min

Max

Min

Max

0.1496

0.1653

3.8

4.2

Tape Feedhole Diameter

D2

Component Lead Thickness Dimension

0.015

0.020

0.38

0.51

Component Lead Pitch

0.0945

0.110

2.4

2.8

F1, F2
H

Bottom of Component to Seating Plane

H1

Feedhole Location

.059

.156

1.5

4.0

0.3346

0.3741

8.5

9.5
1.0

H2A

Deflection Left or Right

0.039

H2B

Deflection Front or Rear

0.051

1.0

0.7086

0.768

18

19.5

H4

Feedhole to Bottom of Component

H5

Feedhole to Seating Plane

0.610

0.649

15.5

16.5

Defective Unit Clipped Dimension

0.3346

0.433

8.5

11

L1

Lead Wire Enclosure

0.09842

2.5

Feedhole Pitch

0.4921

0.5079

12.5

12.9

P1

Feedhole Center to Center Lead

0.2342

0.2658

5.95

6.75

First Lead Spacing Dimension

0.1397

0.1556

3.55

3.95

0.06

0.08

0.15

0.20

0.0567

1.44

P2
T

Adhesive Tape Thickness

T1

Overall Taped Package Thickness

T2

Carrier Strip Thickness

0.014

0.027

0.35

0.65

Carrier Strip Width

0.6889

0.7481

17.5

19

W1

Adhesive Tape Width

0.2165

0.2841

5.5

6.3

W2

Adhesive Tape Position

.0059

0.01968

.15

0.5

NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
3. Component lead to tape adhesion must meet the pull test requirements.
4. Maximum noncumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
8. Splices will not interfere with the sprocket feed holes.

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6

2N5060 Series
ORDERING & SHIPPING INFORMATION: 2N5060 Series packaging options, Device Suffix
U.S.
2N5060,61,62,64
2N5060,61,62,64RLRA
2N5060,64RLRM

Europe
Equivalent

Shipping

Description of TO92 Tape Orientation

2N5060RL1

Bulk in Box (5K/Box)

Radial Tape and Reel (2K/Reel)
Radial Tape and Fan Fold Box (2K/Box)

N/A, Bulk
Round side of TO92 and adhesive tape visible
Flat side of TO92 and adhesive tape visible

PACKAGE DIMENSIONS

TO92 (TO226AA)
CASE 02911
ISSUE AJ

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.

R
P
L
SEATING
PLANE

DIM
A
B
C
D
G
H
J
K
L
N
P
R
V

X X
G

H
V

C
SECTION XX

N
N

INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500

0.250

0.080
0.105

0.100
0.115

0.135

STYLE 10:
PIN 1. CATHODE
2. GATE
3. ANODE

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7

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70

6.35

2.04
2.66

2.54
2.93

3.43

2N5060 Series

ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

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4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
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For additional information, please contact your local

Sales Representative.

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2N5060/D