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ST2310FX: High Voltage Fast-Switching NPN Power Transistor

The document describes an NPN power transistor called the ST2310FX. It provides key specifications and characteristics of the transistor such as voltage and current ratings, thermal data, and electrical characteristics.

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Alejandro Borrego Dominguez
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604 views6 pages

ST2310FX: High Voltage Fast-Switching NPN Power Transistor

The document describes an NPN power transistor called the ST2310FX. It provides key specifications and characteristics of the transistor such as voltage and current ratings, thermal data, and electrical characteristics.

Uploaded by

Alejandro Borrego Dominguez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 6

ST2310FX

HIGH VOLTAGE FAST-SWITCHING


NPN POWER TRANSISTOR

NEW SERIES, ENHANCED PERFORMANCE


FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
HIGH VOLTAGE CAPABILITY ( > 1500 V)
HIGH SWITCHING SPEED
TIGTHER hfe CONTROL
IMPROVED RUGGEDNESS

APPLICATIONS:
HORIZONTAL DEFLECTION FOR
MONITORS 17" AND HIGH END TVS

DESCRIPTION
The device is manufactured using Diffused
Collector technology for more stable operation Vs
base drive circuit variations resulting in very low
worst case dissipation.

ISOWATT218FX

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS


Symbol
V CES
V CEO
V EBO
IC
I CM
IB
P tot
V isol
T stg
Tj

Parameter
Collector-Emitter Voltage (V BE = 0)
Collector-Emitter Voltage (I B = 0)
Emitter-Base Voltage (I C = 0)
Collector Current
Collector Peak Current (t p < 5 ms)
Base Current
Total Dissipation at T C = 25 o C
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
Storage Temperature
Max. Operating Junction Temperature

October 2003

Value
1500
600
7
12
25
7
65
2500
-65 to 150
150

Unit
V
V
V
A
A
A
W
V
o
o

C
C
1/6

ST2310FX
THERMAL DATA
R thj-case

Thermal Resistance Junction-case

Max

1.9

C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


Symbol

Parameter

Test Conditions

I CES

Collector Cut-off
Current (V BE = 0)

V CE = 1500 V
V CE = 1500 V

I EBO

Emitter Cut-off Current


(I C = 0)

V EB = 7 V

V CEO(sus) Collector-Emitter
Sustaining Voltage
(I B = 0)

Min.

Typ.

T J = 125 o C

I C = 100 mA

L = 25 mH

Max.

Unit

1
2

mA
mA

mA

600

V CE(sat)

Collector-Emitter
Saturation Voltage

IC = 7 A

I B = 1.75 A

V BE(sat)

Base-Emitter
Saturation Voltage

IC = 7 A

I B = 1.75 A

1.1

DC Current Gain

IC = 1 A
IC = 7 A
IC = 7 A

V CE = 5 V
V CE = 1 V
V CE = 5 V

IC = 6 A
I B(on) = 1 A
L BB(off) = 1.3 H

f h = 64 KHz
V BE(off) = -2.5 V
(see figure 1)

h FE

ts
tf

INDUCTIVE LOAD
Storage Time
Fall Time

Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

Safe Operating Area

2/6

Thermal Impedance

25
5.5
9.5

6.5
2.3
0.16

3
0.35

s
s

ST2310FX
Derating Curve

Output Characteristics

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

DC Current Gain

DC Current Gain

3/6

ST2310FX
Power Losses

Reverse Biased SOA

Figure 1: Inductive Load Switching Test Circuit.

4/6

Switching Time Inductive Load

ST2310FX

ISOWATT218FX MECHANICAL DATA


DIM.
A
C
D
D1
E
F
F2
G
G1
H
L
L2
L3
L4
L5
L6
L7
N
R
DIA

MIN.
5.30
2.80
3.10
1.80
0.80
0.65
1.80
10.30

mm
TYP.

MAX.
5.70
3.20
3.50
2.20
1.10
0.95
2.20
11.50

MIN.
0.209
0.110
0.122
0.071
0.031
0.026
0.071
0.406

15.70
10.20
23.20
26.70
44.40
4.70
24.70
15.00
2.20
4.20
3.80

0.602
0.386
0.898
1.035
1.701
0.169
0.957
0.575
0.071
0.150
0.134

5.45
15.30
9.80
22.80
26.30
43.20
4.30
24.30
14.60
1.80
3.80
3.40

inch
TYP.

MAX.
0.224
0.126
0.138
0.087
0.043
0.037
0.087
0.453

0.215
0.618
0.402
0.913
1.051
1.748
0.185
0.972
0.591
0.087
0.165
0.150

- Weight : 5.6 g (typ.)


- Maximum Torque (applied to mounting flange) Recommended: 0.55 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80 m
5/6

ST2310FX

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
2003 STMicroelectronics All Rights reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com

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