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2SC5244, 2SC5244A: Silicon NPN Triple Diffusion Mesa Type

This document provides specifications for the 2SC5244 and 2SC5244A power transistors. The transistors are silicon NPN triple diffusion mesa types for use in horizontal deflection output applications. Key specifications include absolute maximum ratings of 1500V/1600V collector-base voltage, 1500V/1600V collector-emitter voltage, and 30A collector current. Electrical characteristics include a minimum forward current gain of 50, typical collector-emitter saturation voltage of 1.5V at 10A, and transition frequency above 3MHz. Graphs show characteristics such as power dissipation, current gain, and saturation voltage over varying conditions.

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Alejandro Borrego Dominguez
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83 views2 pages

2SC5244, 2SC5244A: Silicon NPN Triple Diffusion Mesa Type

This document provides specifications for the 2SC5244 and 2SC5244A power transistors. The transistors are silicon NPN triple diffusion mesa types for use in horizontal deflection output applications. Key specifications include absolute maximum ratings of 1500V/1600V collector-base voltage, 1500V/1600V collector-emitter voltage, and 30A collector current. Electrical characteristics include a minimum forward current gain of 50, typical collector-emitter saturation voltage of 1.5V at 10A, and transition frequency above 3MHz. Graphs show characteristics such as power dissipation, current gain, and saturation voltage over varying conditions.

Uploaded by

Alejandro Borrego Dominguez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Power Transistors

2SC5244, 2SC5244A
Silicon NPN triple diffusion mesa type
For horizontal deflection output

Unit: mm
3.30.2
5.00.3
3.0

Absolute Maximum Ratings


Parameter

(TC=25C)

Symbol

Collector to

2SC5244

base voltage

2SC5244A

Collector to

2SC5244

emitter voltage 2SC5244A

Ratings
1500

VCBO

1600
1500

VCES

1600

Peak collector current

ICP

20

Collector current

IC

30

Ta=25C

dissipation

200

PC

Junction temperature

Tj

Storage temperature

Tstg

3.5

Electrical Characteristics
2SC5244

current

2SC5244A

4.0

2.0

2.0

10.0

5.450.3
10.90.5

1:Base
2:Collector
3:Emitter
TOP3L Package

150

55 to +150

(TC=25C)

Parameter
Collector cutoff

0.60.2

2.70.3

1.00.2

VEBO

1.5

2.00.3
3.00.3

Emitter to base voltage

Collector power TC=25C

26.00.5

Unit

1.5

Solder Dip

1.5

High breakdown voltage, and high reliability through the use of a


glass passivation layer
High-speed switching
Wide area of safe operation (ASO)

20.00.5
2.5

6.0

Features

3.0

20.00.5

Symbol
ICBO

Conditions

min

typ

max

VCB = 1500V, IE = 0

VCB = 1600V, IE = 0

1
50

Emitter cutoff current

IEBO

VEB = 5V, IC = 0
5

Unit
mA
A

Forward current transfer ratio

hFE

VCE = 5V, IC = 10A

Collector to emitter saturation voltage

VCE(sat)

IC = 10A, IB = 2.8A

12

Base to emitter saturation voltage

VBE(sat)

IC = 10A, IB = 2.8A

Transition frequency

fT

VCE = 10V, IC = 0.1A, f = 0.5MHz

Storage time

tstg

IC = 12A, IB1 = 2.4A, IB2 = 4.8A,

1.5

2.5

Fall time

tf

Resistance loaded

0.12

0.2

3
1.5
3

V
V
MHz

Power Transistors

2SC5244, 2SC5244A

PC Ta

IC VCE

(1)

180

14

160
140
120
100
80
60

12

IB=1000mA
800mA
600mA

10

400mA
8
200mA
6
4

40
(3)
20

2
0

TC=100C
25C
10
25C

40

60

80 100 120 140 160

VCE(sat) IC

10

3
1
0.3
0.1 TC=25C
25C

0.3

100C

10

30

10

TC=25C
25C

100C

0.1

10

100

Collector current IC (A)

Rth(t) t
Note: Rth was measured at Ta=25C and under natural convection
(1) PT=10V 0.3A (3W) and without heat sink
(2) PT=10V 1.0A (10W) and with a 100 100 2mm Al heat sink
100
(1)

10

(2)

0.1

101

Time t (s)

20

0
1

1000

102

30

<1mA

Collector current IC (A)

103

40

10

0.01
0.1

100

10

10

f=64kHz, TC=25C
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation

IC/IB=3.5

Area of safe operation, horizontal operation ASO


50

Collector current IC (A)

Base to emitter saturation voltage VBE(sat) (V)

10

0.1

Collector current IC (A)

VBE(sat) IC

30

0.01
104

0.1
0.01

12

100
IC/IB=3.5

0.01
0.1

Collector to emitter voltage VCE (V)

100

0.03

2SC5244
2SC5244A

20

Ambient temperature Ta (C)

Thermal resistance Rth(t) (C/W)

100

(2)
0

VCE=5V

Forward current transfer ratio hFE

200

1000
TC=25C

(1) TC=Ta
(2) With a 100 100 2mm
Al heat sink
(3) Without heat sink
(PC=3.0W)

220

Collector to emitter saturation voltage VCE(sat) (V)

hFE IC

16

Collector current IC (A)

Collector power dissipation PC (W)

240

102

103

104

400

800

1200

1600

2000

Collector to emitter voltage VCE (V)

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