Datasheets

APPENDIX D
DB3 DB4 SMDB3
DIAC
FEATURES
VBO : 32V and 40V

LOW BREAKOVER CURRENT
DO-35
(DB3 and DB4)
DESCRIPTION
Functioning as a trigger diode with a fixed voltage
reference, the DB3/DB4 series can be used in
conjunction with triacs for simplified gate control
circuits or as a starting element in fluorenscent
lamp ballasts.
A new surface mount version is now available in
SOT-23 package, providing reduced space and
compatibility with automatic pick and place
equipment.
2
3
1
SOT-23
(SMDB3)*
Pin 1 and 3 must be shorted
together
ABSOLUTE MAXIMUM RATINGS (limiting values)

Symbol
ITRM
Tstg
Tj
Parameter
Repetitive peak on-state current
tp = 20 s
F= 120 Hz
Storage temperature range

Operating junction temperature range
Value
Unit
SMDB3
1.00
DB3 / DB4
2.00
- 40 to + 125
Note: * SMDB3 indicated as Preliminary spec as product is still in development stage.
October 2001 - Ed: 2B
1/5
DB3 DB4 SMDB3

ELECTRICAL CHARACTERISTICS (Tj = 25C unless otherwise specified)
Symbol
Parameter
Test Conditions
VBO
Breakover voltage *
C = 22nF **
SMDB3
DB3
DB4
Unit
MIN.
28
28
35
TYP.
32
32
40
MAX.
36
36
45
I VBO1 - VBO2 I
Breakover voltage
symmetry
C = 22nF **
MAX.
Dynamic breakover
voltage *
VBO and VF at 10mA
MIN.
10
VO
Output voltage *
see diagram 2
(R=20)
MIN.
10
IBO
Breakover current *
C = 22nF **
MAX.
10
50
see diagram 3
MAX.
0.50
VR = 0.5 VBO max
MAX.
10
see diagram 2 (Gate)
MIN.
0.30
tr
Rise time *
IR
Leakage current *
IP
Peak current *
* Applicable to both forward and reverse directions.

** Connected in parallel to the device.
PRODUCT SELECTOR
VBO
Package
SMDB3
28 - 36
SOT-23
DB3
28 - 36
DO-35
DB4
35 - 45
DO-35
Part Number
ORDERING INFORMATION
SM DB 3
Surface
Mount
Version
Breakover voltage
3: VBO typ = 32V
4: VBO typ = 40V
Diac Series
2/5
DB3 DB4 SMDB3

OTHER INFORMATION
Part Number
Marking
Weight
Base Quantity
Packing Mode
SMDB3
DB3
0.01 g
3000
Tape & Reel
DB3
DB3 (Blue Body Coat)
0.15 g
5000
Tape & Reel
DB4
DB4 (Blue Body Coat)
0.15 g
5000
Tape & Reel
Diagram 1: Voltage - current characteristic curve.
Diagram 2: Test circuit.

10 k
220 V
+ IF
500 k
D.U.T
Rs=0
C=0.1F
50 Hz
Vo
10mA
T410
R=20
-V
IBO
IB
+ V
Diagram 3: Rise time measurement.
0,5 VBO
V
VF
lp
VBO
90 %
- IF
10 %
tr
3/5
DB3 DB4 SMDB3

Fig. 1: Relative variation of VBO versus junction
temperature (typical values).
Fig. 2: Repetitive peak pulse current versus pulse

duration (maximum values).
ITRM(A)
VBO [Tj] / VBO [Tj=25C]
20.0
1.10
1.05
F=120Hz
Tj initial=25C
10.0
DB3/DB4
DB3/DB4
1.00
0.95
SMDB3
1.0
SMDB3
0.90
0.85
tp(s)
Tj(C)
0.80
25
50
75
100
125
0.1
10
100
Fig. 3: Time duration while current pulse is higher

50mA versus C and Rs (typical values).
tp(s)
40
Tj=25C
68
35
30
47
25
33
20
15
22
10
10
5
0
10
C(nF)
20
50
100
200
500
PACKAGE MECHANICAL DATA (in millimeters)

DO-35
REF.
C
O
/D
4/5
O
/D
DIMENSIONS
Millimeters
O
/ B
Inches
Min.
Max.
Min.
Max.
3.05
4.50
0.120
0.177
1.53
2.00
0.060
0.079
28.00
0.458
1.102
0.558
0.018
0.022
DB3 DB4 SMDB3

PACKAGE MECHANICAL DATA (in millimeters)
SOT-23
REF.
DIMENSIONS
Millimeters
e
D
e1
Inches
Min.
Max.
Min.
Max.
0.89
1.4
0.035
0.055
A1
0.1
0.004
0.3
0.51
0.012
0.02
0.085
0.18
0.003
0.007
2.75
3.04
0.108
0.12
0.85
1.05
0.033
0.041
e1
1.7
2.1
0.067
0.083
1.2
1.6
0.047
0.063
2.1
2.75
0.083
0.108
A1
0.6 typ.
0.024 typ.
0.35
0.65
0.014
0.026
FOOTPRINT
0.9
0.035
1.1
0.043
0.9
0.035
2.35
0.92
1.9
0.075
mm
inch
1.1
0.043
1.45
0.037
0.9
0.035
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics

2001 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
5/5
APPENDIX C
2N6504 Series
Preferred Device
Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed primarily for halfwave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
http://onsemi.com
Features
Glass Passivated Junctions with Center Gate Fire for Greater
SCRs
25 AMPERES RMS
50 thru 800 VOLTS
Parameter Uniformity and Stability

Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 Volts
300 A Surge Current Capability
Pb-Free Packages are Available*
G
A
MARKING
DIAGRAM
4
TO-220AB
CASE 221A
STYLE 3
2N650xG
AYWW
1
2
3
x
A
Y
WW
G
= 4, 5, 7, 8 or 9
= Assembly Location
= Year
= Work Week
= Pb-Free Device
PIN ASSIGNMENT
1
Cathode
Anode
Gate
Anode
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2008
April, 2006 - Rev. 8
Publication Order Number:

2N6504/D
2N6504 Series
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Symbol
Rating
Value
Unit
*Peak Repetitive Off-State Voltage (Note 1)

(Gate Open, Sine Wave 50 to 60 Hz, TJ = 25 to 125C)
2N6504
2N6505
2N6507
2N6508
2N6509
VDRM,
VRRM
OnState Current RMS (180 Conduction Angles; TC = 85C)
IT(RMS)
25
Average OnState Current (180 Conduction Angles; TC = 85C)
IT(AV)
16
Peak Nonrepetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 100C)
ITSM
250
Forward Peak Gate Power (Pulse Width 1.0 ms, TC = 85C)
PGM
20
PG(AV)
0.5
50
100
400
600
800
Forward Average Gate Power (t = 8.3 ms, TC = 85C)

Forward Peak Gate Current (Pulse Width 1.0 ms, TC = 85C)
IGM
2.0
Operating Junction Temperature Range
TJ
-40 to +125
Storage Temperature Range
Tstg
-40 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
*Thermal Resistance, Junction-to-Case

*Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds
Max
Unit
RqJC
1.5
C/W
TL
260
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)

Characteristic
Symbol
Min
Typ
Max
Unit
10
2.0
mA
mA
VTM
1.8
IGT
9.0
-
30
75
mA
*Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 W, TC = -40C)
VGT
1.0
1.5
Gate NonTrigger Voltage (VAK = 12 Vdc, RL = 100 W, TJ = 125C)
VGD
0.2
*Holding Current
TC = 25C
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = -40C
IH
18
-
40
80
mA
*TurnOn Time (ITM = 25 A, IGT = 50 mAdc)
tgt
1.5
2.0
ms
TurnOff Time (VDRM = rated voltage)

(ITM = 25 A, IR = 25 A)
(ITM = 25 A, IR = 25 A, TJ = 125C)
tq
-
15
35
50
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25C
TJ = 125C
IDRM,
IRRM
ON CHARACTERISTICS
*Forward On-State Voltage (Note 2) (ITM = 50 A)
*Gate Trigger Current (Continuous dc)
(VAK = 12 Vdc, RL = 100 W)
TC = 25C
TC = -40C
ms
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of OffState Voltage (Gate Open, Rated VDRM, Exponential Waveform)
*Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2
dv/dt
V/ms
2N6504 Series
Voltage Current Characteristic of SCR
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
Anode +
VTM
on state
IH
IRRM at VRRM
Reverse Blocking Region

(off state)
Reverse Avalanche Region
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
13
0
32
P(AV) , AVERAGE POWER (WATTS)
TC , MAXIMUM CASE TEMPERATURE ( C)
Anode -
12
0
= CONDUCTION ANGLE
110
10
0
= 30
90
60
90
180
dc
80
= CONDUCTION ANGLE 60
= 30
24
180
90
dc
16
TJ = 125C
8.0
0
0
4.0
8.0
12
16
IT(AV), ONSTATE FORWARD CURRENT (AMPS)
20
Figure 1. Average Current Derating
4.0
8.0
12
16
IT(AV), AVERAGE ONSTATE FORWARD CURRENT (AMPS)
20
Figure 2. Maximum On-State Power Dissipation
3
2N6504 Series
100
70
50
30
125C
25C
10
7.0
5.0
3.0
2.0
300
I TSM , PEAK SURGE CURRENT (AMP)
iF , INSTANTANEOUS FORWARD CURRENT (AMPS)
20
1.0
0.7
0.5
0.3
0.2
0.1
0
0.4
0.8
1.2
1.6
2.0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
2.4
1 CYCLE
275
250
225
TC = 85C
f = 60 Hz
200
175
1.0
2.8
2.0
3.0
4.0
6.0
8.0
10
NUMBER OF CYCLES
Figure 3. Typical On-State Characteristics
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
SURGE IS PRECEDED AND

FOLLOWED BY RATED CURRENT
Figure 4. Maximum Non-Repetitive Surge Current
1.0
0.7
0.5
0.3
0.2
ZqJC(t) = RqJC r(t)
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
50
20 30
t, TIME (ms)
100
Figure 5. Thermal Response
4
200 300
500
1.0 k
2.0 k 3.0 k 5.0 k
10 k
2N6504 Series
TYPICAL TRIGGER CHARACTERISTICS
VGT, GATE TRIGGER VOLTAGE (VOLTS)
1.0
10
1
-40 -25
-10
5
20
35
50 65
80
TJ, JUNCTION TEMPERATURE (C)
95
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40 -25 -10
110 125
20
35
65
80
95
Figure 7. Typical Gate Trigger Voltage

versus Junction Temperature
100
10
1
-40 -25 -10
50
Figure 6. Typical Gate Trigger Current

IH , HOLDING CURRENT (mA)
I GT, GATE TRIGGER CURRENT (mA)
100
20
35
50
65
80
95
Figure 8. Typical Holding Current

5
110 125
110 125
2N6504 Series
Device
Package
2N6504
TO-220AB
2N6504G
TO-220AB
(Pb-Free)
2N6505
TO-220AB
2N6505G
TO-220AB
(Pb-Free)
2N6505T
TO-220AB
2N6505TG
TO-220AB
(Pb-Free)
2N6507
TO-220AB
2N6507G
TO-220AB
(Pb-Free)
2N6507T
TO-220AB
2N6507TG
TO-220AB
(Pb-Free)
2N6508
TO-220AB
2N6508G
TO-220AB
(Pb-Free)
2N6508TG
TO-220AB
(Pb-Free)
2N6509
TO-220AB
2N6509G
TO-220AB
(Pb-Free)
2N6509T
TO-220AB
2N6509TG
TO-220AB
(Pb-Free)
6
Shipping
500 Units / Box
50 Units / Rail
500 Units / Box
50 Units / Rail
500 Units / Box
50 Units / Rail
500 Units / Box
50 Units / Rail
2N6504 Series
PACKAGE DIMENSIONS
TO-220AB
CASE 221A-07
ISSUE AA
-TB
SEATING
PLANE
C
S
A
U
1 2 3
H
K
Z
R
L
V
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 3:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
CATHODE
ANODE
GATE
ANODE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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LITERATURE FULFILLMENT:
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
2N6504/D
APPENDIX B
MAC15 Series
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
solidstate relays, motor controls, heating controls and power
supplies; or wherever fullwave silicon gate controlled solidstate
devices are needed. Triac type thyristors switch from a blocking to a
conducting state for either polarity of applied main terminal voltage
with positive or negative gate triggering.
TRIACS
15 AMPERES RMS
400 thru 800 VOLTS
Features
Blocking Voltage to 800 V

All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability

Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC15 Series) or
Four Modes (MAC15A Series)
These Devices are PbFree and are RoHS Compliant*
MT2
MARKING
DIAGRAM
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Rating
Symbol
Peak Repetitive OffState Voltage Note 1

(TJ = 40 to +125C, Sine Wave 50 to 60 Hz,
Gate Open)
MAC15A6G
MAC158G, MAC15A8G
MAC1510G, MAC15A10G
VDRM,
VRRM
Peak Gate Voltage

(Pulse Width v 1.0 msec; TC = 90C)
4
Value
Unit
400
600
800
10
OnState Current RMS; Full Cycle Sine

Wave 50 to 60 Hz (TC = +90C)
IT(RMS)
15
Circuit Fusing Consideration (t = 8.3 ms)
I2t
93
A2s
Peak NonRepetitive Surge Current (One

Full Cycle Sine Wave, 60 Hz, TC = +80C)
Preceded and Followed by Rated Current
ITSM
150
Peak Gate Power

(TC = +80C, Pulse Width = 1.0 ms)
PGM
20
PG(AV)
0.5
IGM
2.0
Peak Gate Current

(Pulse Width v 1.0 msec; TC = 90C)
Operating Junction Temperature Range
TJ
40 to +125
Storage Temperature Range
Tstg
40 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
September, 2012 Rev. 5
TO220AB
CASE 221A
STYLE 4
VGM
Average Gate Power (TC = +80C, t = 8.3 ms)
MT1
G
MAC15xxG
AYWW
MAC15xx
xx
A
Y
WW
G
= Specific Device Code

= See Table on Page 2
= Assembly Location (Optional)*
= Year
= Work Week
= PbFree Package
* The Assembly Location code (A) is optional. In

cases where the Assembly Location is stamped
on the package the assembly code may be blank.
PIN ASSIGNMENT
1
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
Publication Order Number:

MAC15A4/D
MAC15 Series
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal Resistance, JunctiontoCase
Characteristic
RqJC
2.0
C/W
Thermal Resistance, JunctiontoAmbient
RqJA
62.5
C/W
TL
260
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
IDRM,
IRRM
10
2.0
mA
mA
Peak OnState Voltage Note 2 (ITM = "21 A Peak)
VTM
1.3
1.6
Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 W)

MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+) A SUFFIX ONLY
IGT
50
50
50
75
Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 W)

MT2(+), G(+)
MT2(+), G()
MT2(), G()
VGT
0.9
0.9
1.1
1.4
2
2
2
2.5
Gate NonTrigger Voltage (VD = 12 V, RL = 100 W) TJ = 110C)

MT2(+), G(+); MT2(), G(); MT2(+), G()
VGD
0.2
0.2
OFF CHARACTERISTICS
Peak Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25C
TJ = 125C
ON CHARACTERISTICS
mA
Holding Current (VD = 12 Vdc, Gate Open, Initiating Current = "200 mA)
IH
6.0
40
mA
Turn-On Time (VD = Rated VDRM, ITM = 17 A)

(IGT = 120 mA, Rise Time = 0.1 ms, Pulse Width = 2 ms)
tgt
1.5
ms
dv/dt(c)
5.0
V/ms
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 21 A,
Commutating di/dt = 7.6 A/ms, Gate Unenergized, TC = 80C)
2. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
Device
MAC158G
MAC1510G
MAC15A6G
MAC15A8G
MAC15A10G
Device Marking
Package
MAC158
TO220AB
(PbFree)
MAC1510
TO220AB
(PbFree)
MAC15A6
TO220AB
(PbFree)
MAC15A8
TO220AB
(PbFree)
MAC15A10
TO220AB
(PbFree)
2
Shipping
500 Units Bulk
MAC15 Series
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VTM
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
on state
IRRM at VRRM
IH
Quadrant 3
MainTerminal 2
IH
off state
VTM
Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
() IGT
GATE
Quadrant I
(+) IGT
GATE
MT1
MT1
REF
REF
IGT
+ IGT
() MT2
Quadrant III
() MT2
Quadrant IV
(+) IGT
GATE
() IGT
GATE
MT1
MT1
REF
REF
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.

With inphase signals (using standard AC lines) quadrants I and III are used.
3
Quadrant 1
MainTerminal 2 +
+ Voltage
IDRM at VDRM
MAC15 Series
20
PAV, AVERAGE POWER (WATTS)
TC, CASE TEMPERATURE (C)
130
= 30
= 60
120
= 90
110
= 180
100
dc
90
TJ 125
= CONDUCTION ANGLE
80
0
120
TJ 125
16
dc
90
12
60
30
8 = CONDUCTION ANGLE
4
0
10
12
14
16
10
12
14
IT(RMS), RMS ON-STATE CURRENT (AMP)
IT(RMS), ON-STATE CURRENT (AMP)
Figure 1. RMS Current Derating
Figure 2. OnState Power Dissipation
1.8
16
50
OFF-STATE VOLTAGE = 12 V
IGT, GATE TRIGGER CURRENT (mA)
VGT, GATE TRIGGER VOLTAGE (VOLTS)
= 180
1.6
1.4
QUADRANT 4
1.2
1.0
0.8
QUADRANTS
0.6
0.4
-60
1
2
3
-40
-20
20
40
60
80
100
120
OFF-STATE VOLTAGE = 12 V
30
20
10
1
2
QUADRANT 3
7.0
5.0
-60
140
4
-40
-20
20
40
60
80
100
120
Figure 4. Typical Gate Trigger Current
Figure 3. Typical Gate Trigger Voltage
4
140
MAC15 Series
100
20
I H, HOLDING CURRENT (mA)
50
TJ = 25C
125C
30
10
7.0
5.0
MAIN TERMINAL #2
POSITIVE
3.0
10
2.0
-60
-40
-20
20
40
60
80
100
120
140
Figure 6. Typical Holding Current

3
2
300
1
TSM, PEAK SURGE CURRENT (AMP)
i TM, INSTANTANEOUS FORWARD CURRENT (AMP)
20
GATE OPEN
MAIN TERMINAL #1
POSITIVE
70
0.7
0.5
0.3
0.2
200
100
70
TC = 80C
Tf = 60 Hz
50
Surge is preceded and followed by rated current

0.1
0.4
30
0.8
1.2
1.6
2.4
2.8
3.2
3.6
4.4
vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
NUMBER OF CYCLES
Figure 5. OnState Characteristics
Figure 7. Maximum NonRepetitive

Surge Current
10
r(t) TRANSIENT THERMAL RESISTANCE

(NORMALIZED)
1
0.5
ZqJC(t) = r(t) RqJC
0.2
0.1
0.05
0.02
0.01
0.1
0.2
0.5
10
20
50
100
t, TIME (ms)
Figure 8. Thermal Response
5
200
500
1k
2k
5k
10 k
MAC15 Series
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AG
T
B
SEATING
PLANE
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
1 2 3
H
K
Z
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.036
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 4:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.91
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLCs product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:
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6
ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MAC15A4/D
APPENDIX A
BUL216
HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED
HIGH OPERATING JUNCTION
TEMPERATURE
HIGH RUGGEDNESS
3
APPLICATIONS
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL216 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS

Symbol
Parameter
Value
Unit
V CES
Collector-Emitter Voltage (V BE = 0)
V CEO
Collector-Emitter Voltage (I B = 0)
V EBO
Emitter-Base Voltage (I C = 0)
Collector Current
Collector Peak Current (t p < 5 ms)
IC
I CM
1600
800
Base Current
I BM
Base Peak Current (t p < 5 ms)
P tot
Total Dissipation at T c = 25 o C
90
IB
T stg
Tj
June 2001
Storage Temperature
Max. Operating Junction Temperature
-65 to 150
150
1/6
BUL216
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case

Thermal Resistance Junction-Ambient
Max
Max
1.39
62.5
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
100
500
A
A
250
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 1600 V
V CE = 1600 V
I CEO
Collector Cut-off
Current (I B = 0)
V CE = 800 V
Collector-Emitter
Sustaining Voltage
I C = 100 mA
Emitter-Base Voltage
(I C = 0)
I E = 10 mA
V CE(sat)
Collector-Emitter
Saturation Voltage
IC = 1 A
IC = 2 A
I B = 0.2 A
I B = 0.66 A
1
3
V
V
V BE(sat)
Base-Emitter
Saturation Voltage
IC = 1 A
IC = 2 A
I B = 0.2 A
I B = 0.66 A
1.2
1.2
V
V
DC Current Gain
I C = 0.4 A
I C = 10 mA
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
I C = 1.5 A
V BE(off) = -5 V
V CL = 250 V
I B1 = 0.5 A
R BB = 0
L = 200 H
2.1
450
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
I C = 1.5 A
V BE(off) = -5 V
V CL = 250 V
T j = 100 o C
I B1 = 0.5 A
R BB = 0
L = 200 H
3
600
VCEO(sus)
V EBO
h FE
T j = 125 o C
L = 25 mH
V CE = 5 V
VCE = 5 V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Areas
2/6
Derating Curve
800
12
10
40
3.3
720
s
ns
s
ns
BUL216
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Inductive Fall Time
Inductive Storage Time
3/6
BUL216
Inductive Fall Time
Inductive Storage Time
Reverse Biased SOA
RBSOA and Inductive Load Switching Test

Circuits
(1) Fast electronic switch

(2) Non-inductive Resistor
(3) Fast recovery rectifier
4/6
BUL216
TO-220 MECHANICAL DATA

DIM.
mm
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
4.40
4.60
0.173
0.181
1.23
1.32
0.048
0.052
2.40
2.72
0.094
0.107
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10.00
10.40
0.394
L2
L4
16.40
13.00
0.409
0.645
14.00
0.511
0.551
0.116
L5
2.65
2.95
0.104
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
3.85
0.147
M
DIA.
2.60
3.75
0.102
0.151
P011CI
5/6
BUL216
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
2001 STMicroelectronics Printed in Italy All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
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APPENDIX D

DB3 DB4 SMDB3

VBO : 32V and 40V

ABSOLUTE MAXIMUM RATINGS (limiting values)

Storage temperature range

Note: * SMDB3 indicated as Preliminary spec as product is still in development stage.

October 2001 - Ed: 2B

DB3 DB4 SMDB3

VBO and VF at 10mA

VR = 0.5 VBO max

see diagram 2 (Gate)

* Applicable to both forward and reverse directions.

DB3 DB4 SMDB3

Tape & Reel

DB3 (Blue Body Coat)

Tape & Reel

DB4 (Blue Body Coat)

Tape & Reel

Diagram 1: Voltage - current characteristic curve.

Diagram 2: Test circuit.

Diagram 3: Rise time measurement.

DB3 DB4 SMDB3

Fig. 2: Repetitive peak pulse current versus pulse

VBO [Tj] / VBO [Tj=25C]

Fig. 3: Time duration while current pulse is higher

PACKAGE MECHANICAL DATA (in millimeters)

DB3 DB4 SMDB3

The ST logo is a registered trademark of STMicroelectronics

Silicon Controlled Rectifiers

Glass Passivated Junctions with Center Gate Fire for Greater

Parameter Uniformity and Stability

Semiconductor Components Industries, LLC, 2008

April, 2006 - Rev. 8

Publication Order Number:

*Peak Repetitive Off-State Voltage (Note 1)

OnState Current RMS (180 Conduction Angles; TC = 85C)

Average OnState Current (180 Conduction Angles; TC = 85C)

Forward Peak Gate Power (Pulse Width 1.0 ms, TC = 85C)

Forward Average Gate Power (t = 8.3 ms, TC = 85C)

Operating Junction Temperature Range

Storage Temperature Range

*Thermal Resistance, Junction-to-Case

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)

*Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 W, TC = -40C)

Gate NonTrigger Voltage (VAK = 12 Vdc, RL = 100 W, TJ = 125C)

*TurnOn Time (ITM = 25 A, IGT = 50 mAdc)

TurnOff Time (VDRM = rated voltage)

Peak Repetitive Off State Forward Voltage

Peak Forward Blocking Current

Peak Repetitive Off State Reverse Voltage

Peak Reverse Blocking Current

Peak On State Voltage

Reverse Blocking Region

TC , MAXIMUM CASE TEMPERATURE ( C)

Figure 1. Average Current Derating

Figure 2. Maximum On-State Power Dissipation

iF , INSTANTANEOUS FORWARD CURRENT (AMPS)

Figure 3. Typical On-State Characteristics

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

SURGE IS PRECEDED AND