TIP31 Series (TIP31/31A/31B/31C) : NPN Epitaxial Silicon Transistor

TIP31 Series(TIP31/31A/31B/31C)
Medium Power Linear Switching Applications
Complementary to TIP32/32A/32B/32C
TO-220
1.Base
NPN Epitaxial Silicon Transistor
2.Collector
3.Emitter
Absolute Maximum Ratings TC=25C unless otherwise noted

Symbol
VCBO
Collector-Base Voltage
Parameter
: TIP31
: TIP31A
: TIP31B
: TIP31C
Value
40
60
80
100
Units
V
V
V
V
40
60
80
100
V
V
V
V
V
VCEO
Collector-Emitter Voltage : TIP31

: TIP31A
: TIP31B
: TIP31C
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICP
Collector Current (Pulse)
IB
Base Current
PC
Collector Dissipation (TC=25C)
40
PC
Collector Dissipation (Ta=25C)
TJ
Junction Temperature
150
TSTG
Storage Temperature
- 65 ~ 150
Electrical Characteristics TC=25C unless otherwise noted

Symbol
VCEO(sus)
ICEO
ICES
Parameter
* Collector-Emitter Sustaining Voltage
: TIP31
: TIP31A
: TIP31B
: TIP31C
Collector Cut-off Current
: TIP31/31A
: TIP31B/31C
Test Condition
IC = 30mA, IB = 0
Min.
Max.
40
60
80
100
Units
V
V
V
V
VCE = 30V, IB = 0
VCE = 60V, IB = 0
0.3
0.3
mA
mA
VCE = 40V, VEB = 0

VCE = 60V, VEB = 0
VCE = 80V, VEB = 0
VCE = 100V, VEB = 0
200
200
200
200
A
A
A
A
mA
Collector Cut-off Current

: TIP31
: TIP31A
: TIP31B
: TIP31C
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
hFE
* DC Current Gain
VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 3A, IB = 375mA
1.2
VBE(sat)
* Base-Emitter Saturation Voltage
VCE = 4V, IC = 3A
1.8
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 500mA
25
10
3.0
50
MHz
* Pulse Test: PW300s, Duty Cycle2%
2000 Fairchild Semiconductor International
Rev. A, February 2000
hFE, DC CURRENT GAIN
VCE = 4V
100
10
1
1
10
100
1000
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
1000
10000
IC /IB = 10
1000
V BE(sat)
100
V CE(sat)
10
1
10000
10
IC[mA], COLLECTOR CURRENT
1000
10000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage
10
50
IC(MAX) (PULSE)
s
1m
TIP31 VCEO MAX.

TIP31A V CEO MAX.
TIP31B VCEO MAX.
TIP31C V CEO MAX.
PC[W], POWER DISSIPATION
45
100 s
IC(MAX) (DC)
s
5m
IC[A], COLLECTOR CURRENT
100
40
35
30
25
20
15
10
5
0.1
0
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
25
50
75
100
125
150
175
200
TC[ C], CASE TEMPERATURE
Figure 4. Power Derating
Typical Characteristics
Package Demensions
TO-220
4.50 0.20
2.80 0.10
(3.00)
+0.10
1.30 0.05
18.95MAX.
(3.70)
3.60 0.10
15.90 0.20
1.30 0.10
(8.70)
(1.46)
9.20 0.20
(1.70)
9.90 0.20
1.52 0.10
0.80 0.10
2.54TYP
[2.54 0.20]
10.08 0.30
(1.00)
13.08 0.20
(45
1.27 0.10
+0.10
0.50 0.05
2.40 0.20
2.54TYP
[2.54 0.20]
10.00 0.20
Dimensions in Millimeters
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
Bottomless
CoolFET
CROSSVOLT
E2CMOS
FACT
FACT Quiet Series
FAST
FASTr
GTO
HiSeC
ISOPLANAR
MICROWIRE
POP
PowerTrench
QFET
QS
Quiet Series
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
UHC
VCX
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support

device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. E
This datasheet has been download from:

www.datasheetcatalog.com
Datasheets for electronics components.

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TIP31 Series(TIP31/31A/31B/31C)

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted

Collector-Emitter Voltage : TIP31

Collector Current (DC)

Collector Current (Pulse)

Collector Dissipation (TC=25C)

Collector Dissipation (Ta=25C)

Electrical Characteristics TC=25C unless otherwise noted

VCE = 40V, VEB = 0

Collector Cut-off Current

Emitter Cut-off Current

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

VCE = 10V, IC = 500mA

* Pulse Test: PW300s, Duty Cycle2%

2000 Fairchild Semiconductor International

Rev. A, February 2000

hFE, DC CURRENT GAIN

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Base-Emitter Saturation Voltage

TIP31 VCEO MAX.

PC[W], POWER DISSIPATION

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Safe Operating Area

2000 Fairchild Semiconductor International

TC[ C], CASE TEMPERATURE

Figure 4. Power Derating

Rev. A, February 2000

Rev. A, February 2000

LIFE SUPPORT POLICY

2. A critical component is any component of a life support

PRODUCT STATUS DEFINITIONS

This datasheet contains the design specifications for

This datasheet contains preliminary data, and

This datasheet contains final specifications. Fairchild

This datasheet contains specifications on a product

2000 Fairchild Semiconductor International

This datasheet has been download from:

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