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Dual N-Channel Enhancement Mode Field Effect Transistor: Features

1. The document is a datasheet for the CEM4804 dual N-channel enhancement mode field effect transistor. 2. The CEM4804 has a maximum drain-source voltage of 30V, continuous drain current of 7.9A, and on-state drain-source resistance as low as 20mΩ at a gate-source voltage of 10V. 3. The datasheet provides information on the device's maximum ratings, electrical characteristics, switching characteristics, and thermal characteristics.

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70 views5 pages

Dual N-Channel Enhancement Mode Field Effect Transistor: Features

1. The document is a datasheet for the CEM4804 dual N-channel enhancement mode field effect transistor. 2. The CEM4804 has a maximum drain-source voltage of 30V, continuous drain current of 7.9A, and on-state drain-source resistance as low as 20mΩ at a gate-source voltage of 10V. 3. The datasheet provides information on the device's maximum ratings, electrical characteristics, switching characteristics, and thermal characteristics.

Uploaded by

Bvm Bvmm
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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CEM4804

PCB24

CEM4804
PRELIMINARY

Dual N-Channel Enhancement Mode Field Effect Transistor


5

FEATURES
30V , 7.9A , RDS(ON)=20m @VGS=10V.
RDS(ON)=30m @VGS=4.5V.

D1

D1

D2

D2

S1

G1 S2

Super high dense cell design for extremely low RDS(ON).


High power and current handing capability.
Surface Mount Package.

SO-8

G2

ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)


Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

20

Parameter

Drain Current-Continuous a
-Pulsed

ID

7.9

IDM

24

Drain-Source Diode Forward Current a

IS

Maximum Power Dissipation a

PD

TJ, TSTG

-55 to 150

Operating Junction and Storage


Temperature Range

THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a

RJA

5-98

62.5

C/W

CEM4804
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter

Condition

Symbol

Min Typ C Max Unit


5

OFF CHARACTERISTICS
Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250A

Zero Gate Voltage Drain Current

IDSS

VDS = 30V, VGS = 0V

Gate-Body Leakage

IGSS

VGS =20V, VDS = 0V

100

nA

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

Drain-Source On-State Resistance

RDS(ON)

30

ON CHARACTERISTICS b

ID(ON)
gFS

On-State Drain Current


Forward Transconductance

VGS = 10V, ID = 6.3A

16

20

VGS = 4.5V, ID = 5A

24

30

VDS = 5V, VGS = 10V


VDS =15V, ID = 6A

10

A
7

857

PF

343

PF

105

PF

DYNAMIC CHARACTERISTICS
Input Capacitance

CISS

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

VDS =15V, VGS = 0V


f =1.0MHZ

SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time

tD(ON)
tr
tD(OFF)

VDD = 10V,
ID = 1A,
VGS = 10V,
RGEN = 6

22

45

ns

34

70

ns

43

90

ns

Fall Time

tf

18

35

ns

Total Gate Charge

Qg

28

35

nC

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS =10V, ID = 3.5A,


VGS =10V
5-99

nC

7.5

nC

CEM4804
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter

DRAIN-SOURCE DIODE CHARACTERISTICS b


Diode Forward Voltage

VGS = 0V, Is =2A

VSD

1.3

Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300s, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
20

15
VGS=10,8,6,5V
12

VGS=4V

ID, Drain Current (A)

ID, Drain Current(A)

16

12

VGS=3V

6
25 C
3

0
0

0.5

1.0

1.5

2.5

2.0

3.0

VDS, Drain-to-Source Voltage (V)

Tj=125 C
1.0

-55 C

1.5

2.0

2.5

3.0

VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics


1.80

RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)

1200
1000

C, Capacitance (pF)

Min Typ Max Unit

Condition

Symbol

Ciss
800
600
Coss
400
200

Crss

0
0

10

15

20

25

30

1.60

ID=6.3A
VGS=10V

1.40
1.20
1.00
0.80
0.60
-50 -25

25

50

75

100 125 150

TJ, Junction Temperature( C)

VDS, Drain-to Source Voltage (V)

Figure 4. On-Resistance Variation with


Temperature

Figure 3. Capacitance

5-100

1.60
VDS=VGS
ID=250A

1.40
1.20
1.00
0.80
0.60
0.40
-50 -25

25

50

75 100 125 150

BVDSS, Normalized
Drain-Source Breakdown Voltage

Vth, Normalized
Gate-Source Threshold Voltage

CEM4804
1.15
ID=250A
1.10
1.05
1.00

0.95
0.90
0.85
-50 -25

25

50

75 100 125 150

Tj, Junction Temperature ( C)

Tj, Junction Temperature ( C)

Figure 6. Breakdown Voltage Variation


with Temperature

Figure 5. Gate Threshold Variation


with Temperature

50

20
16

Is, Source-drain current (A)

gFS, Transconductance (S)

12
8
4
VDS=10V

10

1.0

0.1

0
3

12

0.6

1.0

0.8

IDS, Drain-Source Current (A)

1.2

1.4

VSD, Body Diode Forward Voltage (V)

Figure 7. Transconductance Variation


with Drain Current

Figure 8. Body Diode Forward Voltage


Variation with Source Current

VDS=15V
ID=3.5A
ID, Drain Current (A)

VGS, Gate to Source Voltage (V)

10

6
4
2

10

16

24

32

Qg, Total Gate Charge (nC)

N)

Lim

it
1ms

10ms

1s
10s
DC

10 0

10 -1

10

S(O

100ms

-2

RD

TA=25 C
Tj=150 C
Single Pulse

10 -1

10 1

10 0

VDS, Drain-Source Voltage (V)

Figure 10. Maximum Safe


Operating Area

Figure 9. Gate Charge


5-101

10

CEM4804
VDD
t on

V IN
D

td(off)

tf
90%

90%

VOUT
VOUT

VGS
RGEN

toff
tr

td(on)

RL

10%

INVERTED

10%

G
90%

VIN

50%

50%

10%

PULSE WIDTH

Figure 12. Switching Waveforms

Figure 11. Switching Test Circuit

r(t),Normalized Effective
Transient Thermal Impedance

102

D=0.5

Duty Cycle=0.5
0.2
10

-1

0.1
0.2
0.05

10

PDM

0.1
0.02

0.1
-2

t1

t2

t2

1. RJA (t)=r
* R(t)=r
JA (t) * RJA
1. (t)
RJA
2. RJA=See
Datasheet
2. R
JA=See Datasheet
RJA
(t)PDM* RJA (t)
3. TJM-TA =3.P*TJMTA =
4. Duty Cycle,
D=t1/t2
4. Duty
Cycle, D=t1/t2

0.02 Pulse
Single
Single Pulse
0.01
10

PDM
t1

0.05
0.01

-3
-4

10

-3-3

10
10

-2 -2

10 10

10

-1

10

-1

10

10

Square Wave Pulse Duration (sec)

Figure 13. Normalized Thermal Transient Impedance Curve

5-102

10

10

100

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