FDC658AP

Single P-Channel Logic Level PowerTrench MOSFET

-30V, -4A, 50m:
General Description

Features

This P-Channel Logic Level MOSFET is produced using

Fairchild's advanced PowerTrench process. It has been
optimized for battery power management applications.

Max rDS(on) = 50 m: @ VGS = -10 V, ID = -4A

Max rDS(on) = 75 m: @ VGS = -4.5 V, ID = -3.4A

Applications

Low Gate Charge

High performance trench technology for extremely low
rDS(on)

Battery management
Load switch

RoHS Compliant

Battery protection
DC/DC conversion

PIN 1

SuperSOTTM-6

Absolute Maximum Ratings TA = 25C unless otherwise noted

Symbol
VDS

Drain-Source Voltage

Parameter

VGS

Gate-Source Voltage
Drain Current - Continuous

ID

(Note 1a)

TJ, TSTG

Units
V

r25

-4

-20

- Pulsed
Maximum Power dissipation

PD

Ratings
-30

(Note 1a)
(Note 1b)

Operating and Storage Junction Temperature Range

1.6

0.8
-55 to +150

Thermal Characteristics
RTJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

78

C/W

RTJC

Thermal Resistance, Junction-to-Case

(Note 1)

30

C/W

Package Marking and Ordering Information

Device Marking
.58A

Device
FDC658AP

2011 Fairchild Semiconductor Corporation

FDC658AP Rev. 1.3

Reel Size
7inch

Tape Width
8mm

Quantity
3000 units

www.fairchildsemi.com

FDC658AP Single P-Channel Logic Level PowerTrench MOSFET

August 2015

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

ID = -250PA, VGS = 0V

'BVDSS
'TJ

Breakdown Voltage Temperature

Coefficient

ID = -250PA,
Referenced to 25C

-30

IDSS

Zero Gate Voltage Drain Current

VGS = 0V, VDS = -24V

-1

PA

IGSS

Gate-Body Leakage

VGS = r25V, VDS = 0V

r100

nA

-3

-22

mV/C

On Characteristics (Note 2)
VGS(TH)

Gate Threshold Voltage

VDS = VGS, ID = -250PA

'VGS(TH)
'TJ

Gate Threshold Voltage

Temperature Coefficient

ID = -250PA,
Referenced to 25C

rDS(on)

Static Drain-Source On-Resistance

-1

-1.8
4

mV/C

ID = -4A, VGS = -10V

44

50

ID = -3.4A, VGS = -4.5V

67

75

ID = -4A, VGS = -10V,

TJ = 125C

60

70

m:

ID(ON)

On-State Drain Current

VGS = -10V, VDS = -5V

gFS

Forward Transconductance

ID = -4A, VDS = -5V

8.4

VDS = -15V, VGS = 0V,

f = 1MHz

470

680

126

180

pF

61

90

pF

-20

A
S

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

pF

Switching Characteristics (Note 2)

td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = -15V, ID = -1A

VGS = -10V, RGEN = 6:

VDS = -15V, ID = -4A,

VGS = -5V

14

ns

12

22

ns

16

29

ns

12

ns

8.1

nC

2.1

nC

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward Voltage

VGS = 0V, IS = -1.3 A (Note 2)

-0.77

-1.3

-1.2

Notes:
1: RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design.

b) 156oC/W whe mounted on a

minimum pad of 2 oz copper

a) 78oC/W when mounted on a

1 in2 pad of 2 oz copper

Scale 1: 1 on letter size paper

2: Pulse Test: Pulse Width < 300 Ps, Duty Cycle < 2.0%

FDC658AP Rev. 1.3

www.fairchildsemi.com

FDC658AP Single P-Channel Logic Level PowerTrench MOSFET

Electrical Characteristics TJ = 25C unless otherwise noted

2
-5.0V

VGS = -10V
-I D , DRAIN CURRENT (A)

-6.0V

NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE

20

-4.5V

15

-4.0V

10

-3.5V

-3.0V

1.8
VGS = -4.5V
1.6
-5.0V
1.4
-6.0V
-7.0V

1.2

-8.0V
-10V

0.8
0

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics

16

0.22

ID = -4.0A
VGS = -10V

ID = -2.0A
r DS(on), DRAIN TO SOURCE
ON RESISTANCE (OHM)

1.4

1.2

0.8

0.6
-50

0.18

0.14
TJ = 125oC
0.1
o

TJ = 25 C
0.06

0.02
-25

25

50

75

100

125

150

TJ, JUNCTION TEMPERATURE (oC)

10

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On-Resistance vs Junction

Temperature

Figure 4. On-Resistance vs Gate to Source

Voltage

15

10
o

TJ = -55 C

-I S , REVERSE DRAIN CURRENT (A)

25 C

VDS = -5V
-I D , D R A IN C U R R E N T (A )

20

Figure 2. Normalized On-Resistance vs Drain

Current and Gate Voltage

1.6
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE

12

-ID, DRAIN CURRENT (A)

12
o

125 C
9

VGS = 0V
1
o

TJ = 125 C
0.1
o

25 C
0.01
o

-55 C
0.001

0.0001

-VGS, GATE TO SOURCE VOLTAGE (V)

0.4

0.6

0.8

1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

FDC658AP Rev. 1.3

0.2

Figure 6. Source to Drain Diode Forward Voltage

vs Source Current

www.fairchildsemi.com

FDC658AP Single P-Channel Logic Level PowerTrench MOSFET

Typical Characteristics

-V G S , G A T E -S O U R C E V O L T A G E (V )

10

600

VDS = -5V

ID = -4A
8

C A PA C ITA N C E (pF)

-15V
6

450

300
Coss
150

2
Crss
0

0
0

10

Figure 7. Gate Charge Characteristics

18

24

30

Figure 8. Capacitance vs Drain to Source Voltage

100
P(pk), PEAK TRA NSIENT PO W ER (W )

10

rDS(on) LIMIT

100us

10

1ms
10ms

100ms

VGS = -10V
SINGLE PULSE
RJA = 156oC/W

0.1

1s

TA = 25 C

DC

0.01
0.1

10

SINGLE PULSE
RJA = 156C/W
TA = 25C

0
0.01

100

0.1

10

100

t, PULSE WIDTH (s)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 9. Forward Bias Safe Operating Area

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

12

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

-I D , DR A IN C UR REN T (A )

f = 1 MHz
VGS = 0 V

Ciss

-10V

Figure 10. Single Pulse Maximum Power

Dissipation

1
D = 0.5

RJA(t) = r(t) x RJA

0.2

RJA = 156 C/W

0.1

0.1

P(pk)

0.05

t1

0.02

0.01

t2
TJ - TA = P x RJA(t)
Duty Cycle, D = t1 / t2

0.01

SINGLE PULSE

0.001
0.00001

0.0001

0.001

0.01

0.1

10

100

1000

t, RECTANGULAR PULSE DURATION

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDC658AP Rev. 1.3

www.fairchildsemi.com

FDC658AP Single P-Channel Logic Level PowerTrench MOSFET

Typical Characteristics

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Advance Information

Formative / In Design

Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I76

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