NOV161376
NOV161376
NOV161376
Physics Department, Jodhpur National University, 342001, Boranada, Rajasthan State of India
Abstract: This paper states the step by step experimental approach in determining the band gap of a semiconductor (Germanium
crystal) using four probe set-up, which is a method that permits measurements of resistivity in samples (Germanium). Starting with an
introduction, this paper farther highlights about the Germanium crystal and continues to give a brief overview of the electronic
conduction in solids. Experiment was conducted to determine the band gap of a germanium crystal. The apparatus used are mentioned,
and the procedures taking in determining the required results are explicitly stated. Observations were made, and the readings observed
are tabulated. Thus, it is observed that a plot of the log of resistivity in ohms-meter against the inverse of temperature in (kelvin)-1 gives a
curve whose slope was used to determine the band gap of the semiconductor material, (the germanium crystal). The calculation is shown
in this paper, and the bandgap calculated is approximately 0.70 eV, which tallies with the standard experimental result.
1. Introduction
Semiconductors are materials whose electronic properties are
intermediate between those of metals and insulators. These
characteristics are determined by the structure of the crystal,
bonding characteristics, electronic energy bands, and also by
the fact that unlikemetals, a semiconductor has both the
positive (hole) and the negative (electron) carriers of
electricity whose densities can be controlled by doping the
pure semiconductor with chemical impurities during the
crystal growth. In classifying the solids by their electrical
properties, it should be understood that there are two types of
materials; the metals and the semiconductors.
2. Literature Review
Ms. NeelamSwarnkar and Dr. Purnima SwarupKhare (JanFeb, 2015), wrote on the Analysis of Band Gap of
Thermoelectric materials. They opined that the
thermoelectric properties are based on some parameters as
the figure of merit, thermal conductivity, electrical
conductivity and Seebeck coefficient. It is observed that the
electric conductivity depends upon the energy Band Gap of
the thermoelectric material. As soon as the Band Gap of the
thermoelectric material reduces, it automatically increases
the thermoelectric performance. It was concluded that the
Band Gap of the semiconductor tends to decrease as the
temperature increases. Hence, germanium is useful for
doping or as a catalyst in any reaction involving the
enhancement of the thermoelectric material.
Eunice S.M. Goh, T.P Chen, and Y.C Liu (January 22,
2010), wrote on the Thickness Effect on the Band Gap and
Optical properties of germanium thin film. The band gap
and optical properties of the dielectric functions, and optical
constants of the Ge thin films with various thicknesses below
50nm, which were synthesized with electron beam
evaporation technique, have been determined using
spectroscopic
ellipsometry
and
UV-visible
spectrophotometry. These described the optical properties
with the Forouhi-Bloomer model. They concluded that, for
film thickness smaller than ~10nm, a band gap expansion is
observed as compared to the bulk crystalline Ge, which is
attributed to the one-dimensional quantum confinement
effect. However, a bandgap reduction was observed for
thickness larger than ~10nm, which was explained in terms
of the amorphous effect in the Ge layers.
Moustafa El Kurdi, Guy Fishman, SbastienSauvage, and
Philippe Boucaud (January 13, 2010), wrote on Band
structure and optical gain of tensile-strained germanium
based on 30 band K.P formalism. A transition from indirect
to direct band gap has been predicted for tensile-strained
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3. Apparatus Used
1)
2)
3)
4)
Probe arrangement
Sample: Ge Crystal chip
Oven
Four Probes Set-up (measuring Unit) Having Oven
Controller, Multi-range Digital Voltmeter, and constant
current generator.
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TEMP,
T(K)
320.00
325.00
330.00
335.00
340.00
345.00
350.00
355.00
360.00
365.00
370.00
375.00
380.00
385.00
Voltage
(VOLTS)
49.70
43.80
39.10
35.00
30.40
26.20
22.60
19.20
16.50
14.20
12.20
10.60
9.20
7.90
p(m) T-1x10-3
Log p
15.10
13.31
11.88
10.64
9.24
7.96
6.87
5.83
5.03
4.31
3.70
3.22
2.79
2.40
1.18
1.12
1.07
1.02
0.96
0.90
0.83
0.76
0.70
0.63
0.56
0.50
0.44
0.38
3.125
3.076
3.030
2.985
2.941
2.898
2.857
2.816
2.777
2.739
2.702
2.666
2.631
2.597
ni= pi = 2(
) 3/2 (Me.Mh) 3/2exp(-Eg/2kT)
(4)
2 ^2
Thus, we see that the concentration of intrinsic carriers
depends exponentially onEg/2kT.
4.1Conductivity of Intrinsic Semiconductors
The electrical conductivity, will be the sum of the
contributions of both the electrons and the holes. Thus;
= eni(n + h);
Since ni= pi
3/2
= (K)T (n + h). exp
(5)
2
Using the equation (4) above, and taking k as a constant.
LogeP=
- logeK
(6)
2
5. Calculations
Given that;
n = 2(
) 3/2exp (-Eg)/kT
2 ^2
Where Me effective mass of electron
(1)
Where
= X 1.256
(6)
1.256
Hence; P =
= (
) = X 0.213
5.89
5.89
po = x 2s
(1)
po= 2.
(3)
Hence,
LogeP
1
2.3026 x Log p
1
=
np = 4(
2 ^2
3/2
) (Me.Mh)
3/2
exp(-Eg/kT)
(3)
2.3026 0.56
0.32 10 ^3
= 4029
(2)
Thus,
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^1
Author Profile
Musa AbubakarBilya M.Sc. Student of the Jodhpur
National University, Faculty of Applied Sciences,
Department of Physics, 342001 Boranada, Jodhpur,
Rajasthan State of India.
Mujahid Hassan Sani, M.Sc. student of the Jodhpur
National University, Faculty of Applied Sciences,
Department of Physics, 342001 Boranada, Jodhpur,
Rajasthan State of India.
7. Conclusion
The experiment was concluded and proven that the band gap
energy between the conduction band and the valence band is
approximately equal to; Eg 0.70eV.
References
[1] C. Kittel, Introduction to Solid State Physics, John
Wiley & Sons Inc., New York, 1996.
[2] N.Swarnkar, P.S Khare (2015), Analysis of Bandgap of
Thermoelectric Materials, IOSR Journals of Applied
Physics, Volume 7, issue 1 ver III, pp 26.
[3] Eunice S.M. Goh, T.P Chen, C.Q Sun and Y.C Liu
(2010), Thickness Effect on the Band Gap and Optical
Properties of Germanium Thin Films,Journal of
Applied physics 107, 024305.
[4] M. El kurdi, G. Fishman, S. Sauvage, and P. Boucaud
(2010), Band Structure and Optical Gain of TensileStrained Germanium Based on a 30 Band K.P
Formalism,Journal of Applied Physics 107, 013710.
[5] V. N Smelyanskiy (2014), Donor Spin Qubits in GeBased Phononic Crystals, Quantum Artificial
Intelligencelaboratory, NASA Ames research center,
mail stop 269-3, moffet field CA 94035.
[6] A.V Sachencoet. Al (2010), Analysis of The Attainable
Efficiency of A Direct Band Gap Betavoltaic Element.
[7] G. Cassabois, P. Valvin, and B.Gil (2015), Hexagonal
Boron Nitride is An Indirect Bandgap Semiconductor,
Laboratoire Charles Coulomb (L2C), UMR 5221
CNRS-Universite de Montpellier, F-34095, Montpellier,
France.
[8] C. yong, R. Umberto (2005), Band Structure
Calculation of Si and Ge by Non-Local Empirical
Pseudo-Potential Technique,Journal of Electronic
Science and Technology of China, Vol. 3 No 1, pp 5256.
[9] S.O Pillai (2010), Solid State Physics,New Age
International Publishers Revised 6thedition, Chapter10,
pp521.
[10] SES Instrument Pvt. Ltd (2015), Four Probe Set-up
Manual, Model DFP-03, #686.ISO 9001:2008 certified
company.
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