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Determination of Hall Cofficient of P-Type and N-Type Semiconductor

This document describes an experiment to determine the Hall coefficient of p-type and n-type semiconductor samples. Hall voltage measurements were taken for an InAs film under varying magnetic fields and currents. For the p-type sample, the Hall coefficient was calculated to be 3.2 × 10−8 mC. For the n-type sample, the Hall coefficient was calculated to be -5.30 × 10−8 mC. The experiment demonstrated how to use the Hall effect to characterize semiconductor material and determine if it is p-type or n-type.

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Sayyed Salman
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298 views8 pages

Determination of Hall Cofficient of P-Type and N-Type Semiconductor

This document describes an experiment to determine the Hall coefficient of p-type and n-type semiconductor samples. Hall voltage measurements were taken for an InAs film under varying magnetic fields and currents. For the p-type sample, the Hall coefficient was calculated to be 3.2 × 10−8 mC. For the n-type sample, the Hall coefficient was calculated to be -5.30 × 10−8 mC. The experiment demonstrated how to use the Hall effect to characterize semiconductor material and determine if it is p-type or n-type.

Uploaded by

Sayyed Salman
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© © All Rights Reserved
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DETERMINATION OF HALL

COFFICIENT OF P-TYPE AND N-TYPE


SEMICONDUCTOR
SALMAN SUHAIL
M.Sc Physics
14510042
January 25, 2016

Figure 1:

Abstract
Calculation of the hall coefficient of p-type and n-type semiconductor by measuring applied magnetic field , hall voltage and hall
Hd
current and using formula RH = VBI
.In this experiment we use InAs
semiconductor film of thickness 500 nm.

introduction

Hall coefficient of the material by which we can have the knowledge of its
charge carrier concentration and type of semiconductor (p-type or n-type
semiconductor) .magnetic Field can also be measured.
Here Lorentz force play a very important role to produces hall effect
(hall voltage) , when magnetic field is applied on a current passing material
(in present case semiconductor ),the charge carriers feel Lorenz force which
change the trajectory of charge carriers and start to accumulate in perpendicular direction to the applied magnetic field and current which are responsible
for the hall voltage and hall current .In this experiment ,we have thin film of
InAs semiconductor which can be taken as rectangular specimen as shown

in fig.1
Here Current is flowing in x-direction,the direction of magnetic field is in
z , and hall voltage induces in y-direction.
Force on charge carriers in any time afetr applying the magnetic field of
current is
F = Q(E + V B)
(1)
2

V is velocity of charge carriers, B is the magnetic field which has z-component


only (Bz )
Net force in y-direction is
Fy = Q(Ey Vx Bz )

(2)

Hre -ve sign is coming in above equation due to the direction of Electric field
is opposite to Vx Bz
In steady state condition
Ey = Vx Bz

(3)

Vd = I/(nQA)

(4)

As we know drift velocity

Where A = wt
Substituting Vd into equation 3
We get
Ey =

IB
nQwt

(5)

Now hall voltage is


IBRH
(6)
t
1
where RH = nQ
is a hall coefficient.it can be positive or negative depending
on type of semiconductor or charges holes and electrons respectively.
If we know hall coefficient ,we can measure magnetic field by this formula
VH = EY w =

B=

VH t
RH I

(7)

Results

2.1

Calibration of Helmholtz coil

first we calibrate the Helmholtz coil taking various reading of magnetic field
by Gaussmeter with varying current.we get redings as shown in table 1
Table 1

Serial no.
1
2
3
4
5
6
7
8
9

2.2
2.2.1

B(Gauss) I(Amp)
4
0
60
0.5
119
1.0
181
1.5
242
2.0
300
2.5
358
3.0
412
3.5
458
4.0

p-type semiconductor
At constant hall currentIH = 1.23mA

Serial no.
1
2
3
4
5
6
7
8
9

I(Amp) magnetic field(gauss)


0
4
0.5
60
1.0
119
1.5
181
2.0
242
2.5
300
3.0
358
3.5
412
4.0
458

Hall voltage(mV)
1.9
4.6
7.3
10.0
12.4
14.6
16.5
18.2
19.6

p.png
Figure 2: Experimental set-up
2.2.2

At constant magnetic field B=119 gauss

Serial no.
1
2
3
4
5
6
7
8
9
10
11
12

Hall current(mA) Hall voltage(mV)


0.5
3.2
1
6.3
1.5
9.5
2
12.7
2.5
15.8
3
19.0
3.5
22.1
4
25.3
4.5
28.5
5
31.5
5.5
34.8
6.0
37.9

p.png

Calculation
Ht
RH = VBI
slope of hall voltage and hall current =7.75 mV/mA
9
3
RH = 7.7550010
=3.2 108 mC
119

2.3
2.3.1

n-type semiconductor
At constant hall currentIH = 1.24mA

Serial no.
1
2
3
4
5
6
7
8
9

I(Amp) magnetic field (gauss)


0
4
0.5
60
1.0
119
1.5
181
2.0
242
2.5
300
3.0
358
3.5
412
4.0
458

Hall voltage(mV)
-4.2
-10.1
-16.2
-22.6
-28.8
-34.8
-40.6
-45.9
-50.5

n.png
Figure 3: Experimental set-up
2.3.2

At constant magnetic field B=119gauss

Serial no.
1
2
3
4
5
6
7
8
9
10
11
12

Hall current (mA)


0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6.0

Hall voltage(mV)
-7.1
-14.3
-21.5
-28.5
-35.2
-41.7
-48.0
-54.0
-59.9
-65.5
-71.1
-76.5

Calculation
Ht
RH = VBI
slope of hall voltage and hall current = -12.6 mV/mA
9
3
RH = 12.650010
=5.30 108 mC
119

Figure 4: Experimental set-up

Conclusion
3

We have calculated hall coefficient RH = 3.2 108 mC (average)for p-type


3
semiconductor and hall coefficient RH = 5.30 108 mC (average)for n-type
semiconductor after plotting various graphs between hall voltage and hall
current keeping magnetic field fixed and hall voltage vs magnetic field keeping
hall current fixed.

REFERENCES
1. IITGN physics lab manual
2. Semiconductor physics & Devices by Donald Neamen
3. http : //en.wikipedia.org/wiki/Hallef f ect
4. R Murugeshan Modern Physics

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